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公开(公告)号：US07512167B2
公开(公告)日：2009-03-31
申请号：US11219875
申请日：2005-09-07
申请人： Hiroaki Izu , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Hiroaki Izu , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
CPC分类号： H01S5/4025 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
摘要翻译： 提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。 该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。 第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。
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公开(公告)号：US20060078020A1
公开(公告)日：2006-04-13
申请号：US11219875
申请日：2005-09-07
申请人： Hiroaki Izu , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Hiroaki Izu , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
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公开(公告)号：US07961768B2
公开(公告)日：2011-06-14
申请号：US12256854
申请日：2008-10-23
申请人： Hiroaki Izu , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Hiroaki Izu , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
摘要翻译： 提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。 该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。 第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。
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4.发明申请公开(公告)号：US20110211609A1
公开(公告)日：2011-09-01
申请号：US13100720
申请日：2011-05-04
申请人： Hiroaki IZU , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Hiroaki IZU , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
CPC分类号： H01S5/4025 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
摘要翻译： 提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。 该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。 第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。
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公开(公告)号：US20090046755A1
公开(公告)日：2009-02-19
申请号：US12256854
申请日：2008-10-23
申请人： Hiroaki IZU , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Hiroaki IZU , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
IPC分类号： H01S5/026
CPC分类号： H01S5/4025 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
摘要翻译： 提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。 该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹陷部分的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。 第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。
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6.发明申请SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS OPTICAL PICKUP 审中-公开半导体激光器件及其制造方法如同OPTICI PICKUP公开(公告)号：US20090323750A1
公开(公告)日：2009-12-31
申请号：US12492808
申请日：2009-06-26
申请人： Daijiro Inoue , Kiyoshi Oota , Yoshiki Murayama , Ryoji Hiroyama , Hiroki Ohbo , Seiichi Tokunaga
发明人： Daijiro Inoue , Kiyoshi Oota , Yoshiki Murayama , Ryoji Hiroyama , Hiroki Ohbo , Seiichi Tokunaga
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/02212 , H01S5/024 , H01S5/02461 , H01S5/0421 , H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/2214 , H01S5/222 , H01S5/2231 , H01S5/34333 , H01S2301/173 , H01S2304/04
摘要： A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current blocking layer formed in the vicinity of the current path, and a heat-radiation layer formed to be provided at least in the vicinity of a region formed with a cavity facet of the semiconductor device layer and be located above the current path, and having thermal conductivity larger than that of the current blocking layer.
摘要翻译： 半导体激光装置包括具有发光层并在发光层附近的半导体层上形成有电流路径的半导体器件层，形成在电流路径附近的电流阻挡层，以及散热层 形成为至少设置在形成有半导体器件层的空腔面的区域附近，并且位于电流路径上方，并且具有比当前阻挡层的导热性更大的导热性。
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公开(公告)号：US20050173725A1
公开(公告)日：2005-08-11
申请号：US11047580
申请日：2005-02-02
申请人： Tatsuya Kunisato , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Tatsuya Kunisato , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
IPC分类号： H01L33/32 , H01L29/221
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016
摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.
摘要翻译： 提供了能够抑制光输出特性的降低以及制造成品率的降低的氮化物系发光元件。 这种氮化物系发光器件包括至少含有单一类型金属的导电衬底和具有比金属低的线性膨胀系数的单一类型的无机材料和与导电衬底结合的氮化物基半导体元件层。
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公开(公告)号：US07892874B2
公开(公告)日：2011-02-22
申请号：US12495122
申请日：2009-06-30
申请人： Tatsuya Kunisato , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Tatsuya Kunisato , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016
摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.
摘要翻译： 提供了能够抑制光输出特性的降低以及制造成品率的降低的氮化物系发光元件。 这种氮化物系发光器件包括至少含有单一类型金属的导电衬底和具有比金属低的线性膨胀系数的单一类型的无机材料和与导电衬底结合的氮化物基半导体元件层。
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公开(公告)号：US07488613B2
公开(公告)日：2009-02-10
申请号：US11907649
申请日：2007-10-16
申请人： Tatsuya Kunisato , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Tatsuya Kunisato , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016
摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.
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10.发明申请公开(公告)号：US20090263925A1
公开(公告)日：2009-10-22
申请号：US12495122
申请日：2009-06-30
申请人： Tatsuya KUNISATO , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Tatsuya KUNISATO , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016
摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.
摘要翻译： 提供了能够抑制光输出特性的降低以及制造成品率的降低的氮化物系发光元件。 这种氮化物系发光器件包括至少含有单一类型金属的导电衬底和具有比金属低的线性膨胀系数的单一类型的无机材料和与导电衬底结合的氮化物基半导体元件层。
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