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    Manufacturing method of nitride semiconductor device and nitride semiconductor device
    9.
    发明授权
    Manufacturing method of nitride semiconductor device and nitride semiconductor device 有权
    氮化物半导体器件和氮化物半导体器件的制造方法

    公开(公告)号：US07807490B2

    公开(公告)日：2010-10-05

    申请号：US12216928

    申请日：2008-07-14

    申请人： Takashi Kano ,  Tsutomu Yamaguchi ,  Hiroaki Izu ,  Masayuki Hata ,  Yasuhiko Nomura

    发明人： Takashi Kano ,  Tsutomu Yamaguchi ,  Hiroaki Izu ,  Masayuki Hata ,  Yasuhiko Nomura

    IPC分类号： H01L21/00

    CPC分类号： H01L21/0243 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/0075 ,  H01L33/025

    摘要： Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.

    摘要翻译： 提供了一种氮化物半导体器件的制造方法，其具有氮化物半导体衬底（例如GaN衬底），其中位错集中区域在条带形成中对准，位错集中区域从衬底的前表面延伸到后表面，制造方法 用于以恒定的膜厚堆叠在基板的前表面上的多个氮化物半导体层中的每一个。 在位错集中区域的紧邻区域上的氮化物半导体衬底上形成沟槽。 每个氮化物半导体层在形成有凹槽的氮化物半导体衬底的主表面上形成为晶体生长层。