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    Air-cooled swirlerhead
    21.
    发明授权
    Air-cooled swirlerhead 有权
    风冷旋流器

    公开(公告)号：US08096132B2

    公开(公告)日：2012-01-17

    申请号：US12034064

    申请日：2008-02-20

    Applicant: Yimin Huang ,  Shaun Sullivan ,  Brian Finstad ,  Alexander Haplau-Colan

    Inventor： Yimin Huang ,  Shaun Sullivan ,  Brian Finstad ,  Alexander Haplau-Colan

    IPC: F02C1/00 ,  F02G3/00

    CPC classification number: F23R3/14 ,  F23R3/283 ,  F23R3/286 ,  F23R3/46

    Abstract: A combustor for a gas turbine engine is disclosed which is able to operate with high combustion efficiency, and low nitrous oxide emissions during gas turbine operations. The combustor consists of a can-type configuration which combusts fuel premixed with air and delivers the hot gases to a turbine. Fuel is premixed with air through a swirler and is delivered to the combustor with a high degree of swirl motion about a central axis. This swirling mixture of reactants is conveyed downstream through a flow path that expands; the mixture reacts, and establishes an upstream central recirculation flow along the central axis. A cooling assembly is located on the swirler co-linear with the central axis in which cooler air is conveyed into the prechamber between the recirculation flow and the swirler surface.

    Abstract translation: 公开了一种用于燃气涡轮发动机的燃烧器，其能够在燃气轮机操作期间以高燃烧效率和低氧化亚氮排放进行操作。 燃烧器由罐型构成，其燃烧与空气预混合的燃料并将热气体输送到涡轮机。 燃料通过旋流器与空气预混合并且以围绕中心轴线的高度漩涡运动输送到燃烧器。 反应物的这种旋转混合物通过膨胀的流动路径向下游传送; 混合物反应，并建立沿中心轴的上游中央再循环流。 冷却组件位于与中心轴线共线的旋流器上，其中较冷的空气被输送到再循环流和旋流器表面之间的预燃室中。

    AIR-COOLED SWIRLERHEAD
    22.
    发明申请
    AIR-COOLED SWIRLERHEAD 有权
    空冷式SWIRLERHEAD

    公开(公告)号：US20090205339A1

    公开(公告)日：2009-08-20

    申请号：US12034064

    申请日：2008-02-20

    Applicant: Yimin Huang ,  Shaun Sullivan ,  Brian Finstad ,  Alexander Haplau-Colan

    Inventor： Yimin Huang ,  Shaun Sullivan ,  Brian Finstad ,  Alexander Haplau-Colan

    IPC: F23R3/28 ,  F23R3/14 ,  F02C7/22

    CPC classification number: F23R3/14 ,  F23R3/283 ,  F23R3/286 ,  F23R3/46

    Abstract: A combustor for a gas turbine engine is disclosed which is able to operate with high combustion efficiency, and low nitrous oxide emissions during gas turbine operations. The combustor consists of a can-type configuration which combusts fuel premixed with air and delivers the hot gases to a turbine. Fuel is premixed with air through a swirler and is delivered to the combustor with a high degree of swirl motion about a central axis. This swirling mixture of reactants is conveyed downstream through a flow path that expands; the mixture reacts, and establishes an upstream central recirculation flow along the central axis. A cooling assembly is located on the swirler co-linear with the central axis in which cooler air is conveyed into the prechamber between the recirculation flow and the swirler surface.

    Abstract translation: 公开了一种用于燃气涡轮发动机的燃烧器，其能够在燃气轮机操作期间以高燃烧效率和低氧化亚氮排放进行操作。 燃烧器由罐型构成，其燃烧与空气预混合的燃料并将热气体输送到涡轮机。 燃料通过旋流器与空气预混合并且以围绕中心轴线的高度漩涡运动输送到燃烧器。 反应物的这种旋转混合物通过膨胀的流动路径向下游传送; 混合物反应，并建立沿中心轴的上游中央再循环流。 冷却组件位于与中心轴线共线的旋流器上，其中较冷的空气被输送到再循环流和旋流器表面之间的预燃室中。

    Method for forming dual damascene structure
    24.
    发明授权
    Method for forming dual damascene structure 有权
    形成双镶嵌结构的方法

    公开(公告)号：US06268283B1

    公开(公告)日：2001-07-31

    申请号：US09248159

    申请日：1999-02-09

    Applicant: Yimin Huang

    Inventor： Yimin Huang

    IPC: H01L214763

    CPC classification number: H01L21/76808

    Abstract: An improved method for forming a dual damascene structure is described. A via opening of the dual damascene structure is formed in a dielectric layer. A non-conformal cap layer is then formed on the substrate before the step of defining the photoresist layer. The non-conformal cap layer only covers the top region of the trench but does not fill the trench. A patterned photoresist layer is then formed on the substrate followed by an etching procedure so as to form a trench. The photoresist layer is then removed. The trench and via opening are filled with a conductive layer. Thereafter, redundant portions of the conductive layer are removed by a planarization process.

    Abstract translation: 描述了用于形成双镶嵌结构的改进方法。 电介质层中形成双镶嵌结构的通孔。 然后在限定光致抗蚀剂层的步骤之前，在基板上形成非保形盖层。 非保形盖层仅覆盖沟槽的顶部区域，但不填充沟槽。 然后在衬底上形成图案化的光致抗蚀剂层，然后进行蚀刻程序以形成沟槽。 然后除去光致抗蚀剂层。 沟槽和通孔开口填充有导电层。 此后，通过平坦化处理去除导电层的冗余部分。

    Method of patterning dielectric
    26.
    发明授权
    Method of patterning dielectric 失效
    电介质图案方法

    公开(公告)号：US06191028B1

    公开(公告)日：2001-02-20

    申请号：US09059751

    申请日：1998-04-14

    Applicant: Yimin Huang ,  Tri-Rung Yew

    Inventor： Yimin Huang ,  Tri-Rung Yew

    IPC: H01L214763

    CPC classification number: H01L21/76832 ,  H01L21/76804 ,  H01L21/7681 ,  H01L21/76811

    Abstract: A method of patterning a dielectric layer. On a substrate having a metal wiring layer formed thereon, a dielectric layer and a masking layer are formed. A cap insulation layer is formed on the masking layer before patterning the dielectric layer. In addition, a dual damasecence process is used for patterning the dielectric layer.

    Abstract translation: 图案化介电层的方法。 在其上形成有金属布线层的基板上，形成介电层和掩模层。 在图案化电介质层之前，在掩模层上形成帽绝缘层。 此外，使用双重破坏过程来对介电层进行图案化。

    Method for fabricating dual damascene
    27.
    发明授权
    Method for fabricating dual damascene 有权
    双镶嵌方法

    公开(公告)号：US6156648A

    公开(公告)日：2000-12-05

    申请号：US265207

    申请日：1999-03-10

    Applicant: Yimin Huang

    Inventor： Yimin Huang

    IPC: H01L21/768 ,  H01L21/44

    CPC classification number: H01L21/76844 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76843

    Abstract: A method for fabricating a dual damascene structure. A cap layer and a dielectric layer are formed in sequence over a substrate having a first conductive layer. A trench and a via hole are formed in the dielectric layer. The via hole is aligned under the trench. A barrier spacer is formed on sidewalls of the trench and the via hole. The cap layer exposed by the via hole is removed. A conformal adhesion layer is formed over the substrate. A second conductive layer is formed over the substrate and fills the trench and the via hole. A portion of the second conductive layer and the adhesion layer are removed to expose the dielectric layer.

    Abstract translation: 一种制造双镶嵌结构的方法。 在具有第一导电层的衬底上依次形成覆盖层和电介质层。 在电介质层中形成沟槽和通孔。 通孔在沟槽下对齐。 在沟槽和通孔的侧壁上形成阻挡隔离物。 由通孔露出的盖层被去除。 在衬底上形成共形粘附层。 第二导电层形成在衬底上并填充沟槽和通孔。 去除第二导电层和粘附层的一部分以暴露电介质层。

    Method of fabricating a daul damascene structure
    28.
    发明授权
    Method of fabricating a daul damascene structure 失效
    制造daul镶嵌结构的方法

    公开(公告)号：US6077769A

    公开(公告)日：2000-06-20

    申请号：US72311

    申请日：1998-05-04

    Applicant: Yimin Huang ,  Tony Lin ,  Tri-Rung Yew

    Inventor： Yimin Huang ,  Tony Lin ,  Tri-Rung Yew

    IPC: H01L21/768 ,  H01L21/4763

    CPC classification number: H01L21/76811

    Abstract: A method is provided for fabricating a dual damascene structure on a substrate with a first dielectric layer, an etching stop layer, a second dielectric layer, and a hard mask layer formed on it. The first step is to define the hard mask layer in order to form the first hole, which corresponds to the position of the conductive layer exposing the second dielectric layer. Then, an etching process, including an etching step with medium SiO.sub.2 /SiN etching selectivity and an over-etching step with high SiO.sub.2 /SiN etching selectivity, is performed to form the second hole and the third hole. Finally, a glue/barrier layer and a metal layer are filled into the second hole and the third hole, thus accomplishing a dual damascene structure.

    Abstract translation: 提供了一种用于在衬底上制造双镶嵌结构的方法，其上形成有第一介电层，蚀刻停止层，第二介电层和硬掩模层。 第一步是定义硬掩模层以形成第一孔，其对应于暴露第二电介质层的导电层的位置。 然后，进行包括具有中等SiO 2 / SiN蚀刻选择性的蚀刻步骤和具有高SiO 2 / SiN蚀刻选择性的过蚀刻步骤的蚀刻工艺，以形成第二孔和第三孔。 最后，将胶/阻挡层和金属层填充到第二孔和第三孔中，从而实现双镶嵌结构。

    Fabricating method of a barrier layer
    29.
    发明授权
    Fabricating method of a barrier layer 失效
    阻挡层的制造方法

    公开(公告)号：US6025264A

    公开(公告)日：2000-02-15

    申请号：US52608

    申请日：1998-03-31

    Applicant: Tri-Rung Yew ,  Water Lur ,  Shih-Wei Sun ,  Yimin Huang

    Inventor： Tri-Rung Yew ,  Water Lur ,  Shih-Wei Sun ,  Yimin Huang

    IPC: H01L21/28 ,  H01L21/336 ,  H01L21/768 ,  H01L23/522 ,  H01L29/78

    CPC classification number: H01L21/76843 ,  H01L23/5226 ,  H01L2924/0002

    Abstract: A method for forming a barrier layer comprising the steps of first providing a semiconductor substrate that has a conductive layer already formed thereon. Then, a dielectric layer such as an organic low-k dielectric layer is deposited over the conductive layer and the semiconductor substrate. Next, an opening in formed in the dielectric layer exposing the conductive layer. Thereafter, a first barrier layer is deposited into the opening and the surrounding area. The first barrier layer can be a silicon-contained layer or a doped silicon (doped-Si) layer formed by a plasma-enhanced chemical vapor deposition (PECVD) method, a low-pressure chemical vapor deposition (LPCVD) method, an electron beam evaporation method or a sputtering method. Finally, a second barrier layer is formed over the first barrier layer. The second barrier layer can be a titanium/titanium nitride (Ti/TiN) layer, a tungsten nitride (WN) layer, a tantalum (Ta) layer or a tantalum nitride (TaN) layer.

    Abstract translation: 一种用于形成阻挡层的方法，包括以下步骤：首先提供其上已经形成有导电层的半导体衬底。 然后，在导电层和半导体衬底上沉积诸如有机低k电介质层的电介质层。 接下来，形成在暴露导电层的电介质层中的开口。 此后，第一阻挡层沉积到开口和周围区域中。 第一阻挡层可以是通过等离子体增强化学气相沉积（PECVD）法，低压化学气相沉积法（LPCVD）法，电子束 蒸发法或溅射法。 最后，在第一阻挡层上形成第二阻挡层。 第二阻挡层可以是钛/氮化钛（Ti / TiN）层，氮化钨（WN）层，钽（Ta）层或氮化钽（TaN）层。

    Method of forming a dual damascene with dummy metal lines
    30.
    发明授权
    Method of forming a dual damascene with dummy metal lines 有权
    用虚拟金属线形成双镶嵌的方法

    公开(公告)号：US6001733A

    公开(公告)日：1999-12-14

    申请号：US164856

    申请日：1998-10-01

    Applicant: Yimin Huang ,  Ming-Sheng Yang ,  Tri-Rung Yew

    Inventor： Yimin Huang ,  Ming-Sheng Yang ,  Tri-Rung Yew

    IPC: H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/52 ,  H01L21/44

    CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/7684 ,  H01L2221/1031

    Abstract: A method for forming dual damascene is provided. First, a first inter-metal dielectric layer and a stop layer is formed on a substrate, and then a first photoresist pattern including a via hole and a dummy metal line is patterned and the stop layer is etched for forming via hole. Next, a second inter-metal dielectric layer is deposited and then a second photoresist pattern is patterned for forming metal line trench by etching. Afterwards, a glue layer and a metal layer are blanketed and the dual damascene structure is formed by chemical mechanical polishing.

    Abstract translation: 提供了一种形成双镶嵌的方法。 首先，在基板上形成第一金属间介电层和停止层，然后对包括通孔和虚拟金属线的第一光致抗蚀剂图案进行图案化，并且对停止层进行蚀刻以形成通孔。 接下来，沉积第二金属间介电层，然后对第二光致抗蚀剂图案进行图案化以通过蚀刻形成金属线沟槽。 然后，胶合层和金属层被覆盖，并通过化学机械抛光形成双镶嵌结构。

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