公开(公告)号：US09196332B2

公开(公告)日：2015-11-24

申请号：US13161412

申请日：2011-06-15

申请人： Jing Zhang ,  Yuchen Zhou ,  Rajiv Yadav Ranjan ,  Yiming Huai

发明人： Jing Zhang ,  Yuchen Zhou ,  Rajiv Yadav Ranjan ,  Yiming Huai

IPC分类号： H01L29/82 ,  G11C11/16 ,  H01L43/08

CPC分类号： G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： An STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer, causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.

摘要翻译： STTMRAM元件包括具有垂直磁方位的磁性隧道结（MTJ）。 MTJ包括阻挡层，形成在阻挡层顶部上并具有相对于固定层的磁性取向垂直和可切换的磁性取向的自由层。 当电流流过STTMRAM元件时，自由层的磁方向切换。 通过间隔层从自由层分离的开关增强层（SEL）形成在自由层的顶部上并且具有面内磁性取向并且在自由层上产生磁静电场，导致磁矩 的自由层的外边缘以面内分量倾斜，同时最小程度地干扰自由层中心处的磁矩，以便自由层的切换和降低阈值电压/电流。

公开(公告)号：US20130267042A1

公开(公告)日：2013-10-10

申请号：US13443818

申请日：2012-04-10

申请人： Kimihiro Satoh ,  Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Dong Ha Jung ,  Ebrahim Abedifard ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod

发明人： Kimihiro Satoh ,  Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Dong Ha Jung ,  Ebrahim Abedifard ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod

IPC分类号： H01L21/02

CPC分类号： H01L27/222 ,  H01L43/12

摘要： Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.

摘要翻译： 描述了用于MRAM的制造方法，其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。 在实施例中，首先制造柱，然后将介电材料沉积在侧壁上的再沉积金属上的柱上。 电介质材料基本上覆盖任何暴露的金属，因此在随后的蚀刻期间减少再沉积的来源。 然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。 结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。 本发明的各种实施方案包括增强或优化方法的方法。 如所描述的那样，在侧壁被蚀刻清洁之后，进行位线互连处理。

公开(公告)号：US20120280339A1

公开(公告)日：2012-11-08

申请号：US13161412

申请日：2011-06-15

申请人： Jing Zhang ,  Yuchen Zhou ,  Rajiv Yadav Ranjan ,  Yiming Huai

发明人： Jing Zhang ,  Yuchen Zhou ,  Rajiv Yadav Ranjan ,  Yiming Huai

IPC分类号： H01L29/82

CPC分类号： G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.

摘要翻译： STTMRAM元件包括具有垂直磁方位的磁性隧道结（MTJ）。 MTJ包括阻挡层，形成在阻挡层顶部上并具有相对于固定层的磁性取向垂直和可切换的磁性取向的自由层。 当电流流过STTMRAM元件时，自由层的磁方向切换。 通过间隔层从自由层分离的开关增强层（SEL）形成在自由层的顶部上并且具有面内磁性取向，并且在自由层上产生磁静电场，导致磁矩 自由层的外边缘与面内部件倾斜，同时最小程度地扰乱自由层中心的磁矩，以便自由层的切换和降低阈值电压/电流。

公开(公告)号：US20120205760A1

公开(公告)日：2012-08-16

申请号：US13029054

申请日：2011-02-16

申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan

发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan

IPC分类号： H01L29/82 ,  H01L21/8246

CPC分类号： H01L29/66984 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer, formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.

摘要翻译： 自旋转矩磁性随机存取存储器（STTMRAM）元件包括在基板上形成的具有固定的垂直磁性部件的参考层。 接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。 间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。 自由层的磁性取向相对于固定层的磁性取向。 固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

公开(公告)号：US08830736B2

公开(公告)日：2014-09-09

申请号：US13360553

申请日：2012-01-27

申请人： Yuchen Zhou ,  Yiming Huai

发明人： Yuchen Zhou ,  Yiming Huai

IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C11/56

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  Y10S977/933 ,  Y10S977/935

摘要： A method of initializing a magnetic random access memory (MRAM) element that is configured to store a state when electric current flows therethrough is disclosed. The MRAM element includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. The direction of magnetization of the FL is determinative of the data bit stored in the at least one MTJ and each MTJ further includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ for storing reference bit.

摘要翻译： 公开了一种初始化磁性随机存取存储器（MRAM）元件的方法，该磁性随机存取存储器被配置为在电流流经时存储状态。 MRAM元件包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。 FL的磁化方向决定了存储在至少一个MTJ中的数据位，并且每个MTJ还包括具有与膜平面垂直的方向具有磁化的磁参考层（RL），以及磁性固定 层（PL）具有与膜平面垂直的方向的磁化。 在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。 在第二MTJ中，FL，RL和PL的磁化方向相对于彼此平行，用于存储参考位。

公开(公告)号：US20130021842A1

公开(公告)日：2013-01-24

申请号：US13360553

申请日：2012-01-27

申请人： Yuchen Zhou ,  Yiming Huai

发明人： Yuchen Zhou ,  Yiming Huai

IPC分类号： G11C11/16

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  Y10S977/933 ,  Y10S977/935

摘要： A method of initializing a magnetic random access memory (MRAM) element that is configured to store a state when electric current flows therethrough is disclosed. The MRAM element includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. Each MTJ further includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ for storing reference bit.

摘要翻译： 公开了一种初始化磁性随机存取存储器（MRAM）元件的方法，该磁性随机存取存储器被配置为在电流流经时存储状态。 MRAM元件包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。 每个MTJ还包括具有垂直于膜平面的方向的磁化的磁参考层（RL）和具有与膜平面垂直的方向的磁化的磁性固定层（PL）。 在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。 在第二MTJ中，FL，RL和PL的磁化方向相对于彼此平行，用于存储参考位。

公开(公告)号：US20130021841A1

公开(公告)日：2013-01-24

申请号：US13360524

申请日：2012-01-27

申请人： Yuchen Zhou ,  Yiming Huai

发明人： Yuchen Zhou ,  Yiming Huai

IPC分类号： G11C11/16

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  Y10S977/933 ,  Y10S977/935

摘要： A magnetic random access memory (MRAM) element is configured to store a state when electric current flows and includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. The direction of magnetization of the FL is determinative of the data bit stored in the at least one MTJ. Further, the MTJ includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ.

摘要翻译： 磁性随机存取存储器（MRAM）元件被配置为存储电流流动时的状态，并且包括用于存储数据位的第一磁性隧道结（MTJ）和用于存储参考位的第二MTJ。 FL的磁化方向决定了存储在至少一个MTJ中的数据位。 此外，MTJ包括具有与膜平面垂直的方向的磁化的磁性参考层（RL）和具有与膜平面垂直的方向具有磁化的磁性固定层（PL）。 在第一MTJ中，RL和PL的磁化方向相对于彼此是反平行的。 FL，RL和PL的磁化方向在第二MTJ中相对于彼此平行。

公开(公告)号：US20120295370A1

公开(公告)日：2012-11-22

申请号：US13238972

申请日：2011-09-21

申请人： Yuchen Zhou ,  Yiming Huai

发明人： Yuchen Zhou ,  Yiming Huai

IPC分类号： H01L21/02

CPC分类号： G11C11/161 ,  H01L43/12

摘要： A STTMRAM element has a free sub-layer with enhanced internal stiffness. A first free sub-layer is made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, with an amount greater than the amount of B in the first free sub-layer. The STTMRAM element is cooled to a second temperature that is lower than the first temperature and a third free sub-layer is deposited directly on top of the second free layer, with the third free sub-layer being made partially of boron B. The amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.

摘要翻译： STTMRAM元件具有增强的内部刚度的自由子层。 第一自由子层部分地由硼（B）制成，在第一温度下对STTMRAM元件进行退火以降低第一自由子层与阻挡层之间的界面处的B含量，退火引起 第二自由子层形成在第一自由子层的顶部上并且部分地由B制成，其量大于第一自由子层中的B的量。 STTMRAM元件被冷却到低于第一温度的第二温度，第三自由子层直接沉积在第二自由层的顶部上，第三自由子层部分由硼B构成。量 在第三自由层中的B的含量小于第二自由子层中的B的量。

公开(公告)号：US09070464B2

公开(公告)日：2015-06-30

申请号：US13341826

申请日：2011-12-30

申请人： Yuchen Zhou ,  Yiming Huai

发明人： Yuchen Zhou ,  Yiming Huai

IPC分类号： H01L43/12 ,  G11C11/16

CPC分类号： G11C11/161 ,  H01L43/12

摘要： A spin transfer torque magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, the amount of B of the second free sub-layer being greater than the amount of B in the first free sub-layer. Cooling down the STTMRAM element to a second temperature that is lower than the first temperature and depositing a third free sub-layer directly on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.

摘要翻译： 公开了具有增强的内部刚度的自由子层结构的自旋转矩磁性随机存取存储器（STTMRAM）元件及其制造方法。 沉积第一自由子层，第一自由子层部分由硼（B）制成，在沉积第一自由子层之后，在第一温度下对STTMRAM元素进行退火，以降低B 在第一自由子层和阻挡层之间的界面，退火使第二自由子层形成在第一自由子层的顶部上并且部分地由B构成，第二自由子层的B的量 层大于第一自由子层中的B的量。 将STTMRAM元件冷却至低于第一温度的第二温度，并将第三自由子层直接沉积在第二自由层的顶部上，第三自由子层部分由硼（B）制成，其中 第三子自由层中的B的量小于第二自由子层中的B的量。

公开(公告)号：US20140042567A1

公开(公告)日：2014-02-13

申请号：US13572197

申请日：2012-08-10

申请人： Dong Ha Jung ,  Kimihiro Satoh ,  Jing Zhang ,  Yuchen Zhou ,  Yiming Huai

发明人： Dong Ha Jung ,  Kimihiro Satoh ,  Jing Zhang ,  Yuchen Zhou ,  Yiming Huai

IPC分类号： H01L43/12 ,  H01L43/02

CPC分类号： H01L43/12 ,  H01L43/08

摘要： Use of a multilayer etching mask that includes a stud mask and a removable spacer sleeve for MTJ etching to form a bottom electrode that is wider than the rest of the MTJ pillar is described. The first embodiment of the invention described includes a top electrode and a stud mask. In the second and third embodiments the stud mask is a conductive material and also serves as the top electrode. In embodiments after the stud mask is formed a spacer sleeve is formed around it to initially increase the masking width for a phase of etching. The spacer is removed for further etching, to create step structures that are progressively transferred down into the layers forming the MTJ pillar. In one embodiment the spacer sleeve is formed by net polymer deposition during an etching phase.

摘要翻译： 描述了包括螺柱掩模和用于MTJ蚀刻以形成比MTJ柱的其余部分宽的底部电极的可移除间隔套的多层蚀刻掩模的使用。 所描述的本发明的第一实施例包括顶部电极和螺柱掩模。 在第二和第三实施例中，螺柱掩模是导电材料，并且还用作顶部电极。 在形成螺柱掩模之后的实施例中，在其周围形成间隔套，以最初增加蚀刻阶段的掩模宽度。 去除间隔物用于进一步蚀刻，以产生逐渐转移到形成MTJ柱的层中的阶梯结构。 在一个实施例中，间隔套筒是在蚀刻阶段期间通过净聚合物沉积形成的。