公开(公告)号：US07772667B2

公开(公告)日：2010-08-10

申请号：US11383645

申请日：2006-05-16

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/075

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

公开(公告)号：US20060260675A1

公开(公告)日：2006-11-23

申请号：US11383645

申请日：2006-05-16

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/00

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

公开(公告)号：US07485838B2

公开(公告)日：2009-02-03

申请号：US11491507

申请日：2006-07-24

申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

IPC分类号： H03F3/08 ,  H03F3/04

CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

公开(公告)号：US20070187790A1

公开(公告)日：2007-08-16

申请号：US11226472

申请日：2005-09-15

申请人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

发明人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

IPC分类号： H01L31/0203

CPC分类号： H01L27/1214 ,  H01L27/14609 ,  H01L27/14645 ,  H01L27/14692

摘要： [Abstract]Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.

摘要翻译： [摘要]考虑到进一步促进传感器元件的高输出和小型化，本发明的目的是在有限的区域中形成多个元件，使得元件占据的面积减小以便集成。 另一个目的是提供一种提高传感器元件的产量的方法。 根据本发明，在具有绝缘表面的基板上形成使用非晶硅膜的传感器元件和由薄膜晶体管构成的输出放大电路。 此外，在光电转换层与连接到薄膜晶体管的导线之间设置用于在传感器元件的光电转换层被图案化时用于保护裸线的金属层。

公开(公告)号：US20070113886A1

公开(公告)日：2007-05-24

申请号：US11559477

申请日：2006-11-14

申请人： Tatsuya Arao ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi ,  Kazuo NISHI ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Shuji Fukai

发明人： Tatsuya Arao ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi ,  Kazuo NISHI ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Shuji Fukai

IPC分类号： H01L31/00

CPC分类号： H01L31/022408 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14692 ,  H01L31/03762

摘要： A photoelectric conversion device provided with a photoelectric conversion layer between a first electrode and a second electrode is formed. The first electrode is partially in contact with the photoelectric conversion layer, and a cross-sectional shape of the first electrode in the contact portion is a taper shape. In this case, part of a first semiconductor layer with one conductivity type is in contact with the first electrode. A planer shape in an edge portion of the first electrode is preferably nonangular, that is, a shape in which edges are planed or a curved shape. By such a structure, concentration of an electric field and concentration of a stress can be suppressed, whereby characteristic deterioration of the photoelectric conversion device can be reduced.

摘要翻译： 形成在第一电极和第二电极之间设置有光电转换层的光电转换装置。 第一电极部分地与光电转换层接触，并且接触部分中的第一电极的截面形状是锥形。 在这种情况下，具有一种导电类型的第一半导体层的一部分与第一电极接触。 第一电极的边缘部分中的平面形状优选地是非矩形的，即边缘是平面的形状或弯曲的形状。 通过这样的结构，可以抑制电场的浓度和应力的集中，从而可以降低光电转换装置的特性劣化。

公开(公告)号：US07897483B2

公开(公告)日：2011-03-01

申请号：US12339128

申请日：2008-12-19

申请人： Shunpei Yamazaki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Hiroki Adachi

发明人： Shunpei Yamazaki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Hiroki Adachi

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： Objects are to reduce damage to a semiconductor integrated circuit by external stress and to increase the manufacturing yield of a thinned semiconductor integrated circuit. A single crystal semiconductor layer separated from a single crystal semiconductor substrate is used for a semiconductor element included in the semiconductor integrated circuit. Moreover, a substrate which is formed into a thin shape and provided with the semiconductor integrated circuit is covered with a resin layer. In a separation step, a groove for separating a semiconductor element layer is formed in the supporting substrate, and a resin layer is provided over the supporting substrate in which the groove is formed. After that, the resin layer and the supporting substrate are cut in the groove so as to be divided into a plurality of semiconductor integrated circuits.

摘要翻译： 目的是通过外部应力减少半导体集成电路的损坏，并增加薄型半导体集成电路的制造成品率。 与单晶半导体衬底分离的单晶半导体层用于半导体集成电路中所包含的半导体元件。 此外，形成为薄形并且设置有半导体集成电路的基板被树脂层覆盖。 在分离工序中，在支撑基板上形成用于分离半导体元件层的槽，在形成有槽的支撑基板上设置树脂层。 之后，将树脂层和支撑基板切割成槽，以分成多个半导体集成电路。

公开(公告)号：US08507308B2

公开(公告)日：2013-08-13

申请号：US13244397

申请日：2011-09-24

申请人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Takahiro Iguchi ,  Hiroki Adachi ,  Shunpei Yamazaki

发明人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Takahiro Iguchi ,  Hiroki Adachi ,  Shunpei Yamazaki

IPC分类号： H01L31/18

CPC分类号： H01L27/14625 ,  H01L27/14806 ,  H01L31/075

摘要： A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.

摘要翻译： 半导体器件包括多个半导体集成电路，该多个半导体集成电路与结构体结合，纤维体浸渍有机树脂。 多个半导体集成电路设置在形成在结构体中的开口处，并且各自包括光电转换元件，具有阶梯侧的透光基板，第一表面侧的突出部的宽度小于 设置在透光基板的第二表面上的半导体集成电路部分和覆盖透光基板的第一表面和侧表面的彩色透光树脂层。 多个半导体集成电路包括不同颜色的彩色透光树脂层。

公开(公告)号：US20090267173A1

公开(公告)日：2009-10-29

申请号：US12404376

申请日：2009-03-16

申请人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Takahiro Iguchi ,  Hiroki Adachi ,  Shunpei Yamazaki

发明人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Takahiro Iguchi ,  Hiroki Adachi ,  Shunpei Yamazaki

IPC分类号： H01L31/02 ,  H01L21/50

CPC分类号： H01L27/14625 ,  H01L27/14806 ,  H01L31/075

摘要： A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.

摘要翻译： 半导体器件包括多个半导体集成电路，该多个半导体集成电路与结构体结合，纤维体浸渍有机树脂。 多个半导体集成电路设置在形成在结构体中的开口处，并且各自包括光电转换元件，具有阶梯侧的透光基板，第一表面侧的突出部的宽度小于 设置在透光基板的第二表面上的半导体集成电路部分和覆盖透光基板的第一表面和侧表面的彩色透光树脂层。 多个半导体集成电路包括不同颜色的彩色透光树脂层。

公开(公告)号：US08999818B2

公开(公告)日：2015-04-07

申请号：US12342153

申请日：2008-12-23

申请人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Hiroki Adachi ,  Shunpei Yamazaki

发明人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Hiroki Adachi ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L27/12

CPC分类号： H01L27/1214 ,  H01L27/12 ,  H01L27/14687 ,  H01L27/14692

摘要： A semiconductor element is formed on a first surface of the substrate. A resin layer is formed over a second surface of the substrate which is opposite to the first surface of the substrate and on a part of the side surface of the substrate. A step is formed on the side surface of the substrate. The width of the upper section of the substrate with a step is narrower than the lower section of the substrate with a step. Therefore, the substrate can also be a protrusion.

摘要翻译： 半导体元件形成在基板的第一表面上。 在基板的与基板的第一表面相对的第二表面上和基板的侧表面的一部分上形成树脂层。 在基板的侧面上形成台阶。 具有台阶的基板的上部的宽度比基板的下部的台阶窄。 因此，基板也可以是突起。

公开(公告)号：US08324079B2

公开(公告)日：2012-12-04

申请号：US12355069

申请日：2009-01-16

申请人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Hiroki Adachi ,  Shunpei Yamazaki

发明人： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Hiroki Adachi ,  Shunpei Yamazaki

IPC分类号： H01L21/46

CPC分类号： H01L31/0232 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/1277 ,  H01L27/1462 ,  H01L31/02162 ,  H01L2224/11

摘要： A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color.

摘要翻译： 提供了其中由外部应力引起的诸如裂纹，凹陷或凹痕的损伤减小的半导体器件。 此外，具有小厚度的半导体器件的产量增加。 半导体器件包括具有台阶侧表面的透光衬底，其宽度在台阶之上的部分中并且更接近一个表面的透光衬底小于在该阶梯下方的部分的透光衬底;设置在另一表面上的半导体元件层 以及覆盖透光性基板的一侧面和一部分的第一透光性树脂层和第二透光性树脂层的层叠体。 第一透光树脂层和第二透光树脂层中的一个具有彩色。