公开(公告)号：US10164128B2

公开(公告)日：2018-12-25

申请号：US14226015

申请日：2014-03-26

申请人： Sang Hee Park ,  Tae Joon Kim ,  Hun Hyu Song

发明人： Sang Hee Park ,  Tae Joon Kim ,  Hun Hyu Song

IPC分类号： H01L31/044 ,  H01L31/0224

摘要： A composition for solar cell electrodes includes silver powder; a silver alloy (AgX) that includes silver (Ag) and a metal (X), the silver alloy having a eutectic point of about 150° C. to about 900° C.; a glass frit; and an organic vehicle.

公开(公告)号：US08558295B2

公开(公告)日：2013-10-15

申请号：US12838878

申请日：2010-07-19

申请人： Sung Min Yoon ,  Chun Won Byun ,  Shin Hyuk Yang ,  Sang Hee Park ,  Soon Won Jung ,  Seung Youl Kang ,  Chi Sun Hwang ,  Byoung Gon Yu

发明人： Sung Min Yoon ,  Chun Won Byun ,  Shin Hyuk Yang ,  Sang Hee Park ,  Soon Won Jung ,  Seung Youl Kang ,  Chi Sun Hwang ,  Byoung Gon Yu

IPC分类号： H01G7/06

CPC分类号： H01L29/6684 ,  B82Y10/00 ,  G11C11/22 ,  H01L21/28291 ,  H01L27/1159 ,  H01L29/78391

摘要： Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.

摘要翻译： 提供一种非易失性存储单元及其制造方法。 非易失性存储单元包括存储晶体管和驱动晶体管。 存储晶体管包括设置在基板上的半导体层，缓冲层，有机铁电层和栅极电极。 驱动晶体管包括设置在基板上的半导体层，缓冲层，栅极绝缘层和栅极电极。 存储晶体管和驱动晶体管设置在同一衬底上。 非易失性存储单元在可见光区域是透明的。

公开(公告)号：US08375531B2

公开(公告)日：2013-02-19

申请号：US12744524

申请日：2008-11-21

申请人： Hyung Chan Lee ,  Sang Hee Park ,  Il Hwan Park ,  Jang Chun Kong

发明人： Hyung Chan Lee ,  Sang Hee Park ,  Il Hwan Park ,  Jang Chun Kong

IPC分类号： A44B11/26

CPC分类号： A44B11/2573 ,  Y10T24/45241 ,  Y10T24/45623 ,  Y10T24/45639 ,  Y10T24/45665

摘要： A shockproof device installed to a seatbelt buckle, which is provided in an automobile, airplane, etc, fastened around a seat to keep a passenger safely secured, is installed behind a release button and lock pin, to prevent the release button from being unexpectedly released when the release button is moved in a non-release direction. Even when the release button and lock pin are moved in a release direction, on the basis of a rotation angular velocity of the inertia lever rather than a rotation torque thereof, surface contact between the lock pin and the inertia lever is accomplished and simultaneously, owing to an anti-rotation configuration thereof, the inertia lever reliably prevents unexpected disengagement between the tongue plate and the buckle under the influence of any magnitude of inertial force.

摘要翻译： 安装在安全带扣上的防震装置安装在汽车，飞机等上，固定在座椅上以保持乘客安全地固定，安装在释放按钮和锁定销的后面，以防止释放按钮被意外释放 当释放按钮在非释放方向移动时。 即使当释放按钮和锁定销沿释放方向移动时，基于惯性杆的旋转角速度而不是其旋转扭矩，锁定销和惯性杠杆之间的表面接触也实现并同时由于 在其抗旋转构造中，惯性杆可靠地防止在任何大小的惯性力的影响下舌板和带扣之间的意外脱离。

公开(公告)号：US20120242370A1

公开(公告)日：2012-09-27

申请号：US13355479

申请日：2012-01-20

申请人： Sang Hee Park ,  Chi Sun Hwang ,  Sung Min Yoon ,  Him Chan Oh ,  Kee Chan Park ,  Tao Ren ,  Hong Kyun Leem ,  Min Woo Oh ,  Ji Sun Kim ,  Jae Eun Pi ,  Byeong Hoon Kim ,  Byoung Gon Yu

发明人： Sang Hee Park ,  Chi Sun Hwang ,  Sung Min Yoon ,  Him Chan Oh ,  Kee Chan Park ,  Tao Ren ,  Hong Kyun Leem ,  Min Woo Oh ,  Ji Sun Kim ,  Jae Eun Pi ,  Byeong Hoon Kim ,  Byoung Gon Yu

IPC分类号： H03K19/094

CPC分类号： H03K3/012 ,  H03K19/094 ,  H03K19/20

摘要： Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

摘要翻译： 公开了一种逆变器，NAND门和NOR门。 逆变器包括：上拉单元，由根据施加到栅极的电压向输出端子输出第一电源电压的第二薄膜晶体管构成; 根据施加到门的输入信号，将由接地电压输出到输出端的第五薄膜晶体管构成的下拉单元; 以及根据输入信号将第二电源电压或接地电压施加到第二薄膜晶体管的栅极的上拉驱动器。

公开(公告)号：US08148722B2

公开(公告)日：2012-04-03

申请号：US12967538

申请日：2010-12-14

申请人： Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Jeong Ik Lee

发明人： Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Jeong Ik Lee

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L29/10 ,  H01L33/00 ,  H01L31/12

CPC分类号： H01L29/7869 ,  C23C16/308 ,  C23C16/34 ,  C23C16/407 ,  C23C16/45529 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02554 ,  H01L21/02579 ,  H01L21/0262

摘要： Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

摘要翻译： 提供了使用包含构成薄层的元素的前体和包含p型ZnO半导体层的薄膜晶体管（TFT）之间的表面化学反应来制造透明N掺杂p型ZnO半导体层的方法。 该方法包括以下步骤：准备衬底并将衬底装载到腔室中; 将Zn前体和氧前体注入到室中，并且使用原子层沉积（ALD）技术在Zn前体和氧前体之间引起表面化学反应，以在衬底上形成ZnO薄层; 并将Zn前体和氮前体注入到室中，并且使Zn前体和氮前体之间的表面化学反应在ZnO薄层上形成掺杂层。

公开(公告)号：US07952273B2

公开(公告)日：2011-05-31

申请号：US11951149

申请日：2007-12-05

申请人： Lee Mi Do ,  Kyu Ha Baek ,  Jeong Ik Lee ,  Yong Suk Yang ,  Sung Mook Chung ,  Hye Yong Chu ,  Sang Hee Park ,  Chi Sun Hwang

发明人： Lee Mi Do ,  Kyu Ha Baek ,  Jeong Ik Lee ,  Yong Suk Yang ,  Sung Mook Chung ,  Hye Yong Chu ,  Sang Hee Park ,  Chi Sun Hwang

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L51/5088 ,  H01L51/0059 ,  H01L51/0085 ,  H01L51/5048 ,  H01L51/5092

摘要： An organic light emitting diode (OLED) device is provided. The OLED device includes: a substrate; an anode formed on the substrate; a first organic thin layer formed on the anode; an organic emission layer formed on the first organic thin layer; a second organic thin layer formed on the organic emission layer; and a cathode formed on the second organic thin layer, wherein the first and second organic thin layers are formed in a single layer or a multi-layer, and at least a part of the first or second organic thin layer is doped with or formed of an insulator. The OLED device provides excellent durability, long life-time, and increased luminous efficiency by balanced charge injection caused by doping or stacking the insulator into or on the organic thin layer.

摘要翻译： 提供了一种有机发光二极管（OLED）装置。 OLED器件包括：衬底; 形成在基板上的阳极; 在阳极上形成的第一有机薄层; 形成在所述第一有机薄层上的有机发光层; 形成在有机发光层上的第二有机薄层; 和形成在所述第二有机薄层上的阴极，其中所述第一和第二有机薄层形成在单层或多层中，并且所述第一或第二有机薄层的至少一部分被掺杂或由 绝缘体。 OLED器件通过将绝缘体掺杂或堆叠在有机薄层上或其上而引起的平衡电荷注入，提供优异的耐久性，长的寿命和增加的发光效率。

公开(公告)号：US20100187552A1

公开(公告)日：2010-07-29

申请号：US12664040

申请日：2008-08-21

申请人： Jeong Ik Lee ,  Hye Yong Chu ,  Sung Mook Chung ,  Lee Mi Do ,  Sang Hee Park ,  Chi Sun Hwang

发明人： Jeong Ik Lee ,  Hye Yong Chu ,  Sung Mook Chung ,  Lee Mi Do ,  Sang Hee Park ,  Chi Sun Hwang

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H05B33/10

摘要： Provided are a hybrid white organic light emitting diode (OLED) and a method of fabricating the same. A HOMO level difference between a fluorescent emission layer and an electron transport layer in an organic emission layer (OLED) becomes higher than that between the other layers or a LUMO level difference between a fluorescent emission layer and a hole transport layer is higher than that between the other layers, so that a recombination region is restricted to a part of an emission layer to obtain high-efficiency fluorescent light emission. In addition, triplet excitons that are not used in a fluorescent emission layer are transferred to an auxiliary emission layer formed to be spaced apart from a recombination region by a predetermined distance to emit light in a different color from the fluorescent emission layer, so that both singlet and triplet excitons formed in the OLED are used to obtain high-efficiency white light emission.

摘要翻译： 提供了一种混合白色有机发光二极管（OLED）及其制造方法。 有机发射层（OLED）中的荧光发射层和电子传输层之间的HOMO电平差异变得高于其它层之间的HOMO电平差，或者荧光发射层和空穴传输层之间的LUMO电平差高于 其他层，使得复合区域被限制在发射层的一部分以获得高效荧光发光。 此外，不用于荧光发射层的三线态激子被转移到形成为与复合区隔开预定距离的辅助发射层，以发射与荧光发射层不同的颜色的光，从而两者 使用在OLED中形成的单线态和三线态激子来获得高效白光发射。

公开(公告)号：US20080136321A1

公开(公告)日：2008-06-12

申请号：US11951149

申请日：2007-12-05

申请人： Lee Mi DO ,  Kyu Ha Baek ,  Jeong Ik Lee ,  Yong Suk Yang ,  Sung Mook Chung ,  Hye Yong Chu ,  Sang Hee Park ,  Chi Sun Hwang

发明人： Lee Mi DO ,  Kyu Ha Baek ,  Jeong Ik Lee ,  Yong Suk Yang ,  Sung Mook Chung ,  Hye Yong Chu ,  Sang Hee Park ,  Chi Sun Hwang

IPC分类号： H01L27/28

CPC分类号： H01L51/5088 ,  H01L51/0059 ,  H01L51/0085 ,  H01L51/5048 ,  H01L51/5092

摘要： An organic light emitting diode (OLED) device is provided. The OLED device includes: a substrate; an anode formed on the substrate; a first organic thin layer formed on the anode; an organic emission layer formed on the first organic thin layer; a second organic thin layer formed on the organic emission layer; and a cathode formed on the second organic thin layer, wherein the first and second organic thin layers are formed in a single layer or a multi-layer, and at least a part of the first or second organic thin layer is doped with or formed of an insulator. The OLED device provides excellent durability, long life-time, and increased luminous efficiency by balanced charge injection caused by doping or stacking the insulator into or on the organic thin layer.

摘要翻译： 提供了一种有机发光二极管（OLED）装置。 OLED器件包括：衬底; 形成在基板上的阳极; 在阳极上形成的第一有机薄层; 形成在所述第一有机薄层上的有机发光层; 形成在有机发光层上的第二有机薄层; 和形成在所述第二有机薄层上的阴极，其中所述第一和第二有机薄层形成在单层或多层中，并且所述第一或第二有机薄层的至少一部分被掺杂或由 绝缘体。 OLED器件通过将绝缘体掺杂或堆叠在有机薄层上或其上而引起的平衡电荷注入，提供优异的耐久性，长的寿命和增加的发光效率。

公开(公告)号：US20130100516A1

公开(公告)日：2013-04-25

申请号：US13493498

申请日：2012-06-11

申请人： Gi Heon Kim ,  Sang Hee Park

发明人： Gi Heon Kim ,  Sang Hee Park

IPC分类号： G02B26/02

CPC分类号： G02B26/005 ,  G02B2207/115

摘要： Provided is an electro wetting display capable of improving driving stability by more stably controlling movement of a nonpolar fluid among electro wetting elements. The electro wetting display according to an exemplary embodiment of the present disclosure includes: a first substrate formed on a viewing side of the display, a second substrate formed on a rear side of the display, a pixel partition wall formed between the first and second substrates to partition a pixel area, in which a part of the partition wall is made of a conductive material, and a polar fluid and a nonpolar fluid filled in the pixel area partitioned by the pixel partition wall.

摘要翻译： 提供一种电润湿显示器，其能够通过更稳定地控制电润湿元件之间的非极性流体的运动来提高驱动稳定性。 根据本公开的示例性实施例的电润湿显示器包括：形成在显示器的观看侧的第一基板，形成在显示器的后侧上的第二基板，形成在第一和第二基板之间的像素分隔壁 分隔一部分分隔壁由导电材料制成的像素区域，以及填充在由像素分隔壁分隔的像素区域中的极性流体和非极性流体。

公开(公告)号：US20110253997A1

公开(公告)日：2011-10-20

申请号：US13087363

申请日：2011-04-14

申请人： Sang Hee Park ,  Chi Sun Hwang ,  Chun Won Byun ,  Elvira M.C. Fortunato ,  Rodrigo F.P. Martins ,  Ana R.X. Barros ,  Nuno F.O. Correia ,  Pedro M.C. Barquinha ,  Vitor M.L. Figueiredo

发明人： Sang Hee Park ,  Chi Sun Hwang ,  Chun Won Byun ,  Elvira M.C. Fortunato ,  Rodrigo F.P. Martins ,  Ana R.X. Barros ,  Nuno F.O. Correia ,  Pedro M.C. Barquinha ,  Vitor M.L. Figueiredo

IPC分类号： H01L29/22 ,  H01L21/36

CPC分类号： H01L21/02565 ,  C23C14/08 ,  C23C14/086 ,  C23C14/087 ,  H01L21/02422 ,  H01L21/02579 ,  H01L21/02617 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/823857 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/94

摘要： Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

摘要翻译： 提供一种使用p型氧化物半导体层的半导体器件及其制造方法。 该装置包括由至少一种氧化物形成的p型氧化物层，所述氧化物选自由含铜（Cu）的一氧化碳，含锡（Sn）的一氧化锡，含有Cu-Sn的铜锡氧化物 合金和含有Ni-Sn合金的镍锡氧化物。 因此，使用p型氧化物层容易显影透明或不透明的装置。 由于使用低温工艺形成的氧化物层被应用于半导体器件，所以可以简化半导体器件的制造工艺，并且可以降低制造成本。