公开(公告)号：US07952273B2

公开(公告)日：2011-05-31

申请号：US11951149

申请日：2007-12-05

申请人： Lee Mi Do ,  Kyu Ha Baek ,  Jeong Ik Lee ,  Yong Suk Yang ,  Sung Mook Chung ,  Hye Yong Chu ,  Sang Hee Park ,  Chi Sun Hwang

发明人： Lee Mi Do ,  Kyu Ha Baek ,  Jeong Ik Lee ,  Yong Suk Yang ,  Sung Mook Chung ,  Hye Yong Chu ,  Sang Hee Park ,  Chi Sun Hwang

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L51/5088 ,  H01L51/0059 ,  H01L51/0085 ,  H01L51/5048 ,  H01L51/5092

摘要： An organic light emitting diode (OLED) device is provided. The OLED device includes: a substrate; an anode formed on the substrate; a first organic thin layer formed on the anode; an organic emission layer formed on the first organic thin layer; a second organic thin layer formed on the organic emission layer; and a cathode formed on the second organic thin layer, wherein the first and second organic thin layers are formed in a single layer or a multi-layer, and at least a part of the first or second organic thin layer is doped with or formed of an insulator. The OLED device provides excellent durability, long life-time, and increased luminous efficiency by balanced charge injection caused by doping or stacking the insulator into or on the organic thin layer.

摘要翻译： 提供了一种有机发光二极管（OLED）装置。 OLED器件包括：衬底; 形成在基板上的阳极; 在阳极上形成的第一有机薄层; 形成在所述第一有机薄层上的有机发光层; 形成在有机发光层上的第二有机薄层; 和形成在所述第二有机薄层上的阴极，其中所述第一和第二有机薄层形成在单层或多层中，并且所述第一或第二有机薄层的至少一部分被掺杂或由 绝缘体。 OLED器件通过将绝缘体掺杂或堆叠在有机薄层上或其上而引起的平衡电荷注入，提供优异的耐久性，长的寿命和增加的发光效率。

公开(公告)号：US20080136321A1

公开(公告)日：2008-06-12

申请号：US11951149

申请日：2007-12-05

申请人： Lee Mi DO ,  Kyu Ha Baek ,  Jeong Ik Lee ,  Yong Suk Yang ,  Sung Mook Chung ,  Hye Yong Chu ,  Sang Hee Park ,  Chi Sun Hwang

发明人： Lee Mi DO ,  Kyu Ha Baek ,  Jeong Ik Lee ,  Yong Suk Yang ,  Sung Mook Chung ,  Hye Yong Chu ,  Sang Hee Park ,  Chi Sun Hwang

IPC分类号： H01L27/28

CPC分类号： H01L51/5088 ,  H01L51/0059 ,  H01L51/0085 ,  H01L51/5048 ,  H01L51/5092

摘要： An organic light emitting diode (OLED) device is provided. The OLED device includes: a substrate; an anode formed on the substrate; a first organic thin layer formed on the anode; an organic emission layer formed on the first organic thin layer; a second organic thin layer formed on the organic emission layer; and a cathode formed on the second organic thin layer, wherein the first and second organic thin layers are formed in a single layer or a multi-layer, and at least a part of the first or second organic thin layer is doped with or formed of an insulator. The OLED device provides excellent durability, long life-time, and increased luminous efficiency by balanced charge injection caused by doping or stacking the insulator into or on the organic thin layer.

摘要翻译： 提供了一种有机发光二极管（OLED）装置。 OLED器件包括：衬底; 形成在基板上的阳极; 在阳极上形成的第一有机薄层; 形成在所述第一有机薄层上的有机发光层; 形成在有机发光层上的第二有机薄层; 和形成在所述第二有机薄层上的阴极，其中所述第一和第二有机薄层形成在单层或多层中，并且所述第一或第二有机薄层的至少一部分被掺杂或由 绝缘体。 OLED器件通过将绝缘体掺杂或堆叠在有机薄层上或其上而引起的平衡电荷注入，提供优异的耐久性，长的寿命和增加的发光效率。

公开(公告)号：US20060049768A1

公开(公告)日：2006-03-09

申请号：US11176734

申请日：2005-07-07

申请人： Yong Suk Yang ,  Hye Yong Chu ,  Jeong Ik Lee ,  Ji Young Oh ,  Sang Hee Park ,  Chi Sun Hwang ,  Lee Mi Do ,  Sung Mook Chung ,  Mi Kyung Kim

发明人： Yong Suk Yang ,  Hye Yong Chu ,  Jeong Ik Lee ,  Ji Young Oh ,  Sang Hee Park ,  Chi Sun Hwang ,  Lee Mi Do ,  Sung Mook Chung ,  Mi Kyung Kim

IPC分类号： H05B37/02

CPC分类号： H04N17/04 ,  G02F1/1309 ,  G09G2320/043 ,  G09G2360/145 ,  H05B33/0896

摘要： Provided is an apparatus for measuring a picture and a lifetime of a display panel including: a chamber having at least one display panel for measurement disposed therein, and for uniformly maintaining temperature and humidity conditions of an inner portion; at least one camera installed in the chamber to obtain image signals of the display panel; a bias supply and measurement part for providing pulse bias voltage and current required to measure depending on control signals, and measuring the voltage and current to convert into digital data when the display panel is driven; a converter for converting the image signals obtained through the camera into digital data; and a control and data processing part for generating parameters by receiving the digital data from the bias supply and measurement part and the converter, and analyzing a lifetime of the display panel using the parameters.

摘要翻译： 提供一种用于测量显示面板的图像和寿命的装置，包括：具有至少一个用于测量的显示面板的室，并且用于均匀地保持内部的温度和湿度条件; 至少一个相机安装在所述室中以获得所述显示面板的图像信号; 偏置电源和测量部件，用于提供根据控制信号测量所需的脉冲偏置电压和电流，以及在显示面板驱动时测量电压和电流转换为数字数据; 用于将通过照相机获得的图像信号转换成数字数据的转换器; 以及控制和数据处理部分，用于通过从偏置供应和测量部分和转换器接收数字数据来产生参数，以及使用参数分析显示面板的寿命。

公开(公告)号：US07337089B2

公开(公告)日：2008-02-26

申请号：US11176734

申请日：2005-07-07

申请人： Yong Suk Yang ,  Hye Yong Chu ,  Jeong Ik Lee ,  Ji Young Oh ,  Sang Hee Park ,  Chi Sun Hwang ,  Lee Mi Do ,  Sung Mook Chung ,  Mi Kyung Kim

发明人： Yong Suk Yang ,  Hye Yong Chu ,  Jeong Ik Lee ,  Ji Young Oh ,  Sang Hee Park ,  Chi Sun Hwang ,  Lee Mi Do ,  Sung Mook Chung ,  Mi Kyung Kim

IPC分类号： G06F19/00

CPC分类号： H04N17/04 ,  G02F1/1309 ,  G09G2320/043 ,  G09G2360/145 ,  H05B33/0896

摘要： Provided is an apparatus for measuring a picture and a lifetime of a display panel including: a chamber having at least one display panel for measurement disposed therein, and for uniformly maintaining temperature and humidity conditions of an inner portion; at least one camera installed in the chamber to obtain image signals of the display panel; a bias supply and measurement part for providing pulse bias voltage and current required to measure depending on control signals, and measuring the voltage and current to convert into digital data when the display panel is driven; a converter for converting the image signals obtained through the camera into digital data; and a control and data processing part for generating parameters by receiving the digital data from the bias supply and measurement part and the converter, and analyzing a lifetime of the display panel using the parameters.

摘要翻译： 提供一种用于测量显示面板的图像和寿命的装置，包括：具有至少一个用于测量的显示面板的室，并且用于均匀地保持内部的温度和湿度条件; 至少一个相机安装在所述室中以获得所述显示面板的图像信号; 偏置电源和测量部件，用于提供根据控制信号测量所需的脉冲偏置电压和电流，以及在显示面板驱动时测量电压和电流转换为数字数据; 用于将通过照相机获得的图像信号转换成数字数据的转换器; 以及控制和数据处理部分，用于通过从偏置供应和测量部分和转换器接收数字数据来产生参数，以及使用参数分析显示面板的寿命。

公开(公告)号：US20100187552A1

公开(公告)日：2010-07-29

申请号：US12664040

申请日：2008-08-21

申请人： Jeong Ik Lee ,  Hye Yong Chu ,  Sung Mook Chung ,  Lee Mi Do ,  Sang Hee Park ,  Chi Sun Hwang

发明人： Jeong Ik Lee ,  Hye Yong Chu ,  Sung Mook Chung ,  Lee Mi Do ,  Sang Hee Park ,  Chi Sun Hwang

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H05B33/10

摘要： Provided are a hybrid white organic light emitting diode (OLED) and a method of fabricating the same. A HOMO level difference between a fluorescent emission layer and an electron transport layer in an organic emission layer (OLED) becomes higher than that between the other layers or a LUMO level difference between a fluorescent emission layer and a hole transport layer is higher than that between the other layers, so that a recombination region is restricted to a part of an emission layer to obtain high-efficiency fluorescent light emission. In addition, triplet excitons that are not used in a fluorescent emission layer are transferred to an auxiliary emission layer formed to be spaced apart from a recombination region by a predetermined distance to emit light in a different color from the fluorescent emission layer, so that both singlet and triplet excitons formed in the OLED are used to obtain high-efficiency white light emission.

摘要翻译： 提供了一种混合白色有机发光二极管（OLED）及其制造方法。 有机发射层（OLED）中的荧光发射层和电子传输层之间的HOMO电平差异变得高于其它层之间的HOMO电平差，或者荧光发射层和空穴传输层之间的LUMO电平差高于 其他层，使得复合区域被限制在发射层的一部分以获得高效荧光发光。 此外，不用于荧光发射层的三线态激子被转移到形成为与复合区隔开预定距离的辅助发射层，以发射与荧光发射层不同的颜色的光，从而两者 使用在OLED中形成的单线态和三线态激子来获得高效白光发射。

公开(公告)号：US20100006837A1

公开(公告)日：2010-01-14

申请号：US12496558

申请日：2009-07-01

申请人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

发明人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01B1/08

CPC分类号： H01L29/7869 ,  C23C14/08 ,  H01L29/247

摘要： Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.

摘要翻译： 提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造场效应晶体管的方法。 该组合物包括氧化铝，氧化锌，氧化铟和氧化锡。 由组合物形成的薄膜是非晶相。 具有由组合物形成的有源层的场效应晶体管可以具有改进的电特性并通过低温工艺制造。

公开(公告)号：US07875559B2

公开(公告)日：2011-01-25

申请号：US11970836

申请日：2008-01-08

申请人： Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Jeong Ik Lee

发明人： Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Jeong Ik Lee

IPC分类号： H01L21/00 ,  H01L21/469 ,  H01L21/31

CPC分类号： H01L29/7869 ,  C23C16/308 ,  C23C16/34 ,  C23C16/407 ,  C23C16/45529 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02554 ,  H01L21/02579 ,  H01L21/0262

摘要： Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

摘要翻译： 提供了使用包含构成薄层的元素的前体和包含p型ZnO半导体层的薄膜晶体管（TFT）之间的表面化学反应来制造透明N掺杂p型ZnO半导体层的方法。 该方法包括以下步骤：准备衬底并将衬底装载到腔室中; 将Zn前体和氧前体注入到室中，并且使用原子层沉积（ALD）技术在Zn前体和氧前体之间引起表面化学反应，以在衬底上形成ZnO薄层; 并将Zn前体和氮前体注入到室中，并且使Zn前体和氮前体之间的表面化学反应在ZnO薄层上形成掺杂层。

公开(公告)号：US08148722B2

公开(公告)日：2012-04-03

申请号：US12967538

申请日：2010-12-14

申请人： Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Jeong Ik Lee

发明人： Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Jeong Ik Lee

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L29/10 ,  H01L33/00 ,  H01L31/12

CPC分类号： H01L29/7869 ,  C23C16/308 ,  C23C16/34 ,  C23C16/407 ,  C23C16/45529 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02554 ,  H01L21/02579 ,  H01L21/0262

摘要： Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

摘要翻译： 提供了使用包含构成薄层的元素的前体和包含p型ZnO半导体层的薄膜晶体管（TFT）之间的表面化学反应来制造透明N掺杂p型ZnO半导体层的方法。 该方法包括以下步骤：准备衬底并将衬底装载到腔室中; 将Zn前体和氧前体注入到室中，并且使用原子层沉积（ALD）技术在Zn前体和氧前体之间引起表面化学反应，以在衬底上形成ZnO薄层; 并将Zn前体和氮前体注入到室中，并且使Zn前体和氮前体之间的表面化学反应在ZnO薄层上形成掺杂层。

公开(公告)号：US08071434B2

公开(公告)日：2011-12-06

申请号：US12560702

申请日：2009-09-16

申请人： Woo Seok Cheong ,  Sung Mook Chung ,  Min Ki Ryu ,  Chi Sun Hwang ,  Hye Yong Chu

发明人： Woo Seok Cheong ,  Sung Mook Chung ,  Min Ki Ryu ,  Chi Sun Hwang ,  Hye Yong Chu

IPC分类号： H01L21/338

CPC分类号： H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/7869

摘要： Provided is a method of fabricating a thin film transistor including source and drain electrodes, a novel channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The method includes the steps of forming the channel layer using an oxide semiconductor doped with boron; and patterning the channel layer. The channel layer formed is an oxide semiconductor thin film doped with boron. The electrical characteristics and high temperature stability of the thin film transistor are improved remarkably.

摘要翻译： 提供了一种制造薄膜晶体管的方法，该薄膜晶体管包括形成在基板上的源电极和漏电极，新颖的沟道层，栅极绝缘层和栅极电极。 该方法包括使用掺杂有硼的氧化物半导体形成沟道层的步骤; 并图形化沟道层。 形成的沟道层是掺杂有硼的氧化物半导体薄膜。 薄膜晶体管的电特性和高温稳定性显着提高。

公开(公告)号：US08409935B2

公开(公告)日：2013-04-02

申请号：US13590768

申请日：2012-08-21

申请人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

发明人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

IPC分类号： H01L21/00

CPC分类号： H01L29/66742 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869

摘要： A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.

摘要翻译： 一种制造透明晶体管的方法，所述透明晶体管包括形成在所述基板上的基板，源极和漏极，每个具有下透明层，金属层和上透明层的多层结构，在所述源极和漏极之间形成的沟道 电极和与通道对准的栅电极。 下透明层或上透明层由与通道相同的透明半导体层形成。