摘要:
Provided is an electro wetting display capable of improving driving stability by more stably controlling movement of a nonpolar fluid among electro wetting elements. The electro wetting display according to an exemplary embodiment of the present disclosure includes: a first substrate formed on a viewing side of the display, a second substrate formed on a rear side of the display, a pixel partition wall formed between the first and second substrates to partition a pixel area, in which a part of the partition wall is made of a conductive material, and a polar fluid and a nonpolar fluid filled in the pixel area partitioned by the pixel partition wall.
摘要:
Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter.
摘要:
A paste composition for forming an electrode includes: Component A: a conductive powder; Component B: a glass frit having a transmittance of about 65% or less at a wavelength of 550 nm; Component C: an organic binder; and Component D: a solvent.
摘要:
A lighting device for providing mixtures of color temperature and intensity of light. The device comprises a case that contains: a multi-chip of light emitting diode (LED) to output mixtures of color temperature and intensity of light, having a plurality of blocks of LEDs each having a predetermined color temperature, the multi-chip LED being mounted on a printed circuit board (PCB); a cooling system attached on the back of the metal PCB, the cooling system using a fluid coolant for radiating heat generated by the multi-chip LED; and a control system electrically connected with the PCB of each block and the cooling system, the control system is adapted to supply power to the multi-chip LED, select the blocks of LEDs to be adjusted, adjust the color temperature and intensity of light of the selected block of LEDs to obtain mixtures of color temperatures and intensity of light.
摘要:
A paste composition for an electrode, a PDP including the electrode, and associated methods, the paste composition including a conductive material, a black pigment, a glass frit, and an organic binder, wherein the black pigment includes a magnetic black pigment, the magnetic black pigment being included in an amount of about 0.1 to about 20 wt %, based on the total weight of the composition.
摘要:
Provided is an apparatus for measuring a picture and a lifetime of a display panel including: a chamber having at least one display panel for measurement disposed therein, and for uniformly maintaining temperature and humidity conditions of an inner portion; at least one camera installed in the chamber to obtain image signals of the display panel; a bias supply and measurement part for providing pulse bias voltage and current required to measure depending on control signals, and measuring the voltage and current to convert into digital data when the display panel is driven; a converter for converting the image signals obtained through the camera into digital data; and a control and data processing part for generating parameters by receiving the digital data from the bias supply and measurement part and the converter, and analyzing a lifetime of the display panel using the parameters.
摘要:
A composition for solar cell electrodes, a solar cell electrode prepared from the composition, a solar cell, and a method of manufacturing the same, the composition including silver powder; silver iodide; glass frit; and an organic vehicle, wherein the silver iodide is present in an amount of about 0.1 wt % to about 30 wt %, based on a total weight of the composition.
摘要:
Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.
摘要:
Provided are a semiconductor device including a dual gate transistor and a method of fabricating the same. The semiconductor device includes a lower gate electrode, an upper gate electrode on the lower gate electrode, a contact plug interposed between the lower gate electrode and the upper gate electrode, and connecting the lower gate electrode to the upper gate electrode, and a functional electrode spaced apart from the upper gate electrode and formed at the same height as the upper gate electrode. The dual gate transistor exhibiting high field effect mobility is applied to the semiconductor device, so that characteristics of the semiconductor device can be improved. In particular, since no additional mask or deposition process is necessary, a large-area high-definition semiconductor device can be mass-produced with neither an increase in process cost nor a decrease in yield.
摘要:
Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.