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公开(公告)号：US08367464B2
公开(公告)日：2013-02-05
申请号：US13209809
申请日：2011-08-15
申请人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01L21/00
CPC分类号： H01L45/1233 , H01L27/2463 , H01L27/2472 , H01L45/085 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641 , H01L45/1675
摘要： A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode.
摘要翻译： 一种包括第一电极的非易失性存储单元; 第二电极; 以及电接触区域，其电连接所述第一电极和所述第二电极，所述电接触区域具有端部和连续侧部，并且所述端部和所述连续侧部一起形成开放空腔，其中所述存储单元 具有可以通过在第一电极和第二电极两端施加电压来切换的高电阻状态和低电阻状态。
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公开(公告)号：US20120153400A1
公开(公告)日：2012-06-21
申请号：US12971393
申请日：2010-12-17
CPC分类号： H01L27/115 , B82Y10/00 , H01L29/66977
摘要： A transistor including a source; a drain; a gate region, the gate region including a gate; an island; and a gate oxide, wherein the gate oxide is positioned between the gate and the island; and the gate and island are coactively coupled to each other; and a source barrier and a drain barrier, wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region.
摘要翻译： 一种晶体管，包括一个源极; 排水 栅极区域，所述栅极区域包括栅极; 一个岛屿; 和栅极氧化物，其中所述栅极氧化物位于所述栅极和岛之间; 门和岛彼此共同耦合; 源极屏障和漏极阻挡层，其中源极栅极将源极与栅极区域隔离，并且漏极栅极将漏极与栅极区域分离。
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公开(公告)号：US20110300687A1
公开(公告)日：2011-12-08
申请号：US13209809
申请日：2011-08-15
申请人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01L21/02
CPC分类号： H01L45/1233 , H01L27/2463 , H01L27/2472 , H01L45/085 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641 , H01L45/1675
摘要： A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode.
摘要翻译： 一种包括第一电极的非易失性存储单元; 第二电极; 以及电接触区域，其电连接所述第一电极和所述第二电极，所述电接触区域具有端部和连续侧部，并且所述端部和所述连续侧部一起形成开放空腔，其中所述存储单元 具有可以通过在第一电极和第二电极两端施加电压来切换的高电阻状态和低电阻状态。
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公开(公告)号：US20100123210A1
公开(公告)日：2010-05-20
申请号：US12272912
申请日：2008-11-18
IPC分类号： H01L29/861
CPC分类号： H01L45/00
摘要： A diode having a reference voltage electrode, a variable voltage electrode, and a diode material between the electrodes. The diode material is formed of at least one high-K dielectric material and has an asymmetric energy barrier between the reference voltage electrode and the variable voltage electrode, with the energy barrier having a relatively maximum energy barrier level proximate the reference voltage electrode and a minimum energy barrier level proximate the variable voltage electrode.
摘要翻译： 具有参考电压电极，可变电压电极和电极之间的二极管材料的二极管。 二极管材料由至少一个高K电介质材料形成，并且在参考电压电极和可变电压电极之间具有不对称能量势垒，其中能量势垒具有靠近参考电压电极的相对最大的能量势垒级别，并且最小值 靠近可变电压电极的能量级别。
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公开(公告)号：US20110007551A1
公开(公告)日：2011-01-13
申请号：US12502222
申请日：2009-07-13
申请人： Wei Tian , Insik Jin , Venugopalan Vaithyanathan , Haiwen Xi , Michael Xuefei Tang , Brian Lee
发明人： Wei Tian , Insik Jin , Venugopalan Vaithyanathan , Haiwen Xi , Michael Xuefei Tang , Brian Lee
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C13/0011 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/51 , G11C2213/76 , H01L27/2409 , H01L45/085 , H01L45/1233 , H01L45/1246
摘要： A non-volatile memory cell and associated method is disclosed that includes a non-ohmic selection layer. In accordance with some embodiments, a non-volatile memory cell consists of a resistive sense element (RSE) coupled to a non-ohmic selection layer. The selection layer is configured to transition from a first resistive state to a second resistive state in response to a current greater than or equal to a predetermined threshold.
摘要翻译： 公开了一种包括非欧姆选择层的非易失性存储单元和相关联的方法。 根据一些实施例，非易失性存储器单元由耦合到非欧姆选择层的电阻感测元件（RSE）组成。 响应于大于或等于预定阈值的电流，选择层被配置为从第一电阻状态转变到第二电阻状态。
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公开(公告)号：US20100123542A1
公开(公告)日：2010-05-20
申请号：US12272871
申请日：2008-11-18
申请人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
CPC分类号： H01L45/1233 , H01L27/2463 , H01L27/2472 , H01L45/085 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641 , H01L45/1675
摘要： A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode.
摘要翻译： 一种包括第一电极的非易失性存储单元; 第二电极; 以及电接触区域，其电连接所述第一电极和所述第二电极，所述电接触区域具有端部和连续侧部，并且所述端部和所述连续侧部一起形成开放空腔，其中所述存储单元 具有可以通过在第一电极和第二电极两端施加电压来切换的高电阻状态和低电阻状态。
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公开(公告)号：US20100102369A1
公开(公告)日：2010-04-29
申请号：US12420131
申请日：2009-04-08
申请人： Wei Tian , Haiwen Xi , Yuankai Zheng , Venugopalan Vaithyanathan , Insik Jin
发明人： Wei Tian , Haiwen Xi , Yuankai Zheng , Venugopalan Vaithyanathan , Insik Jin
CPC分类号： H01L27/11507 , G11C11/1675 , G11C11/22 , G11C11/2275
摘要： A ferroelectric memory cell that has a magnetoelectric element between a first electrode and a second electrode, the magnetoelectric element comprising a ferromagnetic material layer and a multiferroic material layer with an interface therebetween. The magnetization orientation of the ferromagnetic material layer and the multiferroic material layer may be in-plane or out-of-plane. FeRAM memory devices are also provided.
摘要翻译： 一种在第一电极和第二电极之间具有磁电元件的铁电存储器单元，所述磁电元件包括铁磁材料层和在其间具有界面的多铁性材料层。 铁磁材料层和多铁性材料层的磁化取向可以是平面内或平面外的。 还提供了FeRAM存储器件。
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公开(公告)号：US08421048B2
公开(公告)日：2013-04-16
申请号：US12501689
申请日：2009-07-13
申请人： Venugopalan Vaithyanathan , Markus Jan Peter Siegert , Wei Tian , Muralikrishnan Balakrishnan , Insik Jin
发明人： Venugopalan Vaithyanathan , Markus Jan Peter Siegert , Wei Tian , Muralikrishnan Balakrishnan , Insik Jin
CPC分类号： G11C13/02 , G11C13/0007 , G11C2213/31 , G11C2213/34 , G11C2213/54 , G11C2213/55 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/144 , H01L45/146
摘要： An example memory cell may have at least a tunneling region disposed between a conducting region and a metal region, wherein the tunneling region can have at least an active interface region disposed between a first tunneling barrier and a second tunneling barrier. A high resistive film is formed in the active interface region with migration of ions from both the metal and conducting regions responsive to a write current to program the memory cell to a selected resistive state.
摘要翻译： 示例性存储单元可以具有布置在导电区域和金属区域之间的至少一个隧道区域，其中隧道区域可以具有至少一个设置在第一隧道势垒和第二隧道势垒之间的有源界面区域。 响应于写入电流而在存储单元编程到选定的电阻状态，在界面区域中形成高电阻膜，使离子从金属和导电区域两次迁移。
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公开(公告)号：US08648426B2
公开(公告)日：2014-02-11
申请号：US12971393
申请日：2010-12-17
IPC分类号： H01L21/70
CPC分类号： H01L27/115 , B82Y10/00 , H01L29/66977
摘要： A transistor including a source; a drain; a gate region, the gate region including a gate; an island; and a gate oxide, wherein the gate oxide is positioned between the gate and the island; and the gate and island are coactively coupled to each other; and a source barrier and a drain barrier, wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region.
摘要翻译： 一种包括源极的晶体管; 排水 栅极区域，所述栅极区域包括栅极; 一个岛屿; 和栅极氧化物，其中所述栅极氧化物位于所述栅极和岛之间; 门和岛彼此共同耦合; 源极屏障和漏极阻挡层，其中源极栅极将源极与栅极区域隔离，并且漏极栅极将漏极与栅极区域分离。
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公开(公告)号：US08178864B2
公开(公告)日：2012-05-15
申请号：US12272912
申请日：2008-11-18
IPC分类号： H01L29/861
CPC分类号： H01L45/00
摘要： A diode having a reference voltage electrode, a variable voltage electrode, and a diode material between the electrodes. The diode material is formed of at least one high-K dielectric material and has an asymmetric energy barrier between the reference voltage electrode and the variable voltage electrode, with the energy barrier having a relatively maximum energy barrier level proximate the reference voltage electrode and a minimum energy barrier level proximate the variable voltage electrode.
摘要翻译： 具有参考电压电极，可变电压电极和电极之间的二极管材料的二极管。 二极管材料由至少一个高K电介质材料形成，并且在参考电压电极和可变电压电极之间具有不对称能量势垒，其中能量势垒具有靠近参考电压电极的相对最大的能量势垒级别，并且最小值 靠近可变电压电极的能量级别。
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