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21.发明授权公开(公告)号：US07404879B2
公开(公告)日：2008-07-29
申请号：US10932076
申请日：2004-09-02
CPC分类号： H01J37/321 , C23C14/358 , H01J37/3408
摘要： Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.1 mtorr, and to produce high density plasma with high efficiency compared to a conventional IPVD apparatus. Accordingly, a high efficiency of ionization of deposition material is achieved.
摘要翻译： 提供了一种具有螺旋自谐振线圈的电离物理气相沉积（IPVD）装置。 IPVD装置包括具有支撑待处理基板的基板保持器的处理室，将要沉积在基板上的材料供给到面向基板保持器的处理室中的沉积材料源，注入单元 将处理气体进入处理室，向衬底保持器施加偏置电位的偏压电源，产生用于离子化处理室中的沉积材料的等离子体的螺旋自谐振线圈，螺旋自谐振线圈的一端 接地并且另一端电气打开，以及RF发生器，用于向螺旋自谐振线圈提供RF功率。 螺旋自谐振线圈的使用使得IPVD装置能够在非常低的室压力（例如约0.1mtorr）下点燃和操作，并且与传统的IPVD装置相比，可以高效率地产生高密度等离子体。 因此，实现了沉积材料的高效离子化。
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公开(公告)号：US07210424B2
公开(公告)日：2007-05-01
申请号：US10843430
申请日：2004-05-12
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/321
摘要： A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. A reaction gas injection device injects a reaction gas into an interior of the processing chamber. An inductively coupled plasma (ICP) antenna, which is installed on a center of the dielectric window, transfers radio frequency (RF) power from an RF power supply to the interior of the processing chamber. A waveguide guides a microwave generated by a microwave generator. A circular radiative tube, which is installed on the dielectric window around the ICP antenna and is connected to the waveguide, radiates a microwave toward the interior of the processing chamber via a plurality of slots formed through a bottom wall of the radiative tube.
摘要翻译： 高密度等离子体处理设备包括处理室，其具有用于支撑待处理物体的基座，以及位于处理室上的介电窗口，以形成处理室的上表面。 反应气体注入装置将反应气体注入到处理室的内部。 安装在电介质窗口的中心的电感耦合等离子体（ICP）天线将射频（RF）功率从RF电源传送到处理室的内部。 波导引导微波发生器产生的微波。 安装在ICP天线周围的电介质窗口并连接到波导的圆形辐射管通过经由辐射管的底壁形成的多个狭槽向处理室的内部辐射微波。
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公开(公告)号：US07053448B2
公开(公告)日：2006-05-30
申请号：US11070090
申请日：2005-03-03
申请人： Sang-hun Jeon , Chung-woo Kim , Dong-joon Ma , Sung-kyu Choi
发明人： Sang-hun Jeon , Chung-woo Kim , Dong-joon Ma , Sung-kyu Choi
IPC分类号： H01L29/792
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02181 , H01L21/022 , H01L21/28282 , H01L21/31616 , H01L21/31645 , H01L28/56 , H01L29/513 , H01L29/792
摘要： A SONOS type memory includes a semiconductor substrate, first and second impurity regions in the semiconductor substrate doped with impurity ions of a predetermined conductivity, separated a predetermined distance from each other, a channel region between the first and second impurity regions, and a data storage type stack on the semiconductor substrate between the first and second impurity regions. The data storage type stack includes a tunneling oxide layer, a memory node layer for storing data, a blocking oxide layer, and an electrode layer, which are sequentially formed. A dielectric constant of the memory node layer is higher than dielectric constants of the tunneling and the blocking oxide layers, and a band offset of the memory node layer is lower than band offsets of the tunneling and the blocking oxide layers. The tunneling oxide layer and the blocking oxide layer are high dielectric insulating layers.
摘要翻译： SONOS型存储器包括半导体衬底，半导体衬底中掺杂有预定电导率的杂质离子的第一和第二杂质区，彼此隔开预定距离，第一和第二杂质区之间的沟道区，以及数据存储 在第一和第二杂质区之间的半导体衬底上。 数据存储型堆叠包括依次形成的隧道氧化物层，用于存储数据的存储节点层，阻挡氧化物层和电极层。 存储节点层的介电常数高于隧道和阻塞氧化物层的介电常数，并且存储器节点层的带偏移低于隧道和阻塞氧化物层的带偏移。 隧道氧化物层和阻挡氧化物层是高介电绝缘层。
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公开(公告)号：US20050173069A1
公开(公告)日：2005-08-11
申请号：US10931132
申请日：2004-09-01
申请人： Yuri Tolmachev , Dong-joon Ma , Dae-il Kim , Sergiy Navala
发明人： Yuri Tolmachev , Dong-joon Ma , Dae-il Kim , Sergiy Navala
CPC分类号： H01J37/32247 , H01J37/32192
摘要： Provided is a microwave plasma generating apparatus using a multiple open-ended cavity resonator, and a plasma processing apparatus including the microwave plasma generating apparatus. The plasma processing apparatus includes a container for forming a process chamber, a support unit that supports a material to be processed in the process chamber, a dielectric window formed on an upper part of the process chamber, a gas supply unit that inject a process gas into the process chamber, and a microwave supply unit that includes a plurality of resonators for supplying microwaves through the dielectric window.
摘要翻译： 提供了一种使用多开口腔谐振器的微波等离子体产生装置和包括微波等离子体产生装置的等离子体处理装置。 等离子体处理装置包括用于形成处理室的容器，在处理室中支撑待处理材料的支撑单元，形成在处理室的上部的电介质窗口，注入处理气体的气体供给单元 以及包括用于通过电介质窗提供微波的多个谐振器的微波提供单元。
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25.发明申请公开(公告)号：US20050103623A1
公开(公告)日：2005-05-19
申请号：US10932076
申请日：2004-09-02
申请人： Yuri Tolmachev , Dong-joon Ma , Sergiy Navala , Dae-il Kim
发明人： Yuri Tolmachev , Dong-joon Ma , Sergiy Navala , Dae-il Kim
CPC分类号： H01J37/321 , C23C14/358 , H01J37/3408
摘要： Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.1 mtorr, and to produce high density plasma with high efficiency compared to a conventional IPVD apparatus. Accordingly, a high efficiency of ionization of deposition material is achieved.
摘要翻译： 提供了一种具有螺旋自谐振线圈的电离物理气相沉积（IPVD）装置。 IPVD装置包括具有支撑待处理基板的基板保持器的处理室，将要沉积在基板上的材料供给到面向基板保持器的处理室中的沉积材料源，注入单元 将处理气体进入处理室，向衬底保持器施加偏置电位的偏压电源，产生用于离子化处理室中的沉积材料的等离子体的螺旋自谐振线圈，螺旋自谐振线圈的一端 接地并且另一端电气打开，以及RF发生器，用于向螺旋自谐振线圈提供RF功率。 螺旋自谐振线圈的使用使得IPVD装置能够在非常低的室压力（例如约0.1mtorr）下点燃和操作，并且与传统的IPVD装置相比，可以高效率地产生高密度等离子体。 因此，实现了沉积材料的高效离子化。
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公开(公告)号：US08361561B2
公开(公告)日：2013-01-29
申请号：US12659329
申请日：2010-03-04
申请人： Jung-hyun Lee , Dong-joon Ma
发明人： Jung-hyun Lee , Dong-joon Ma
IPC分类号： B05D3/06
CPC分类号： C23C18/122 , C23C18/1254 , C23C18/14 , H01L21/288 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： Provided may be a method of manufacturing a silicon (Si) film by using a Si solution process. According to the method of manufacturing the Si film, the Si film may be manufactured by preparing a Si forming solution. The ultraviolet rays (UV) may be irradiated on the prepared Si forming solution. The Si forming solution may be coated on a substrate and a solvent in the Si forming solution may be coated on the substrate. An electron beam may be irradiated on the Si forming solution from which the solvent is removed.
摘要翻译： 提供可以通过使用Si溶液法制造硅（Si）膜的方法。 根据制造Si膜的方法，可以通过制备Si形成溶液来制造Si膜。 可以将紫外线（UV）照射在所制备的Si形成溶液中。 Si形成溶液可以涂覆在基底上，并且Si形成溶液中的溶剂可以涂覆在基底上。 可以将电子束照射在去除溶剂的Si形成溶液中。
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公开(公告)号：US08324085B2
公开(公告)日：2012-12-04
申请号：US12588609
申请日：2009-10-21
申请人： Jung-hyun Lee , Dong-joon Ma
发明人： Jung-hyun Lee , Dong-joon Ma
IPC分类号： H01L21/20 , H01L21/36 , H01L21/26 , H01L21/31 , H01L21/469
CPC分类号： H01L21/0262 , C30B25/105 , C30B29/06 , H01L21/02532
摘要： Disclosed is a method of manufacturing crystalline Si by using plasma. According to the disclosed method, silicon (Si) deposition and reduction processes using plasma are cyclically performed in order to completely remove an a-Si layer so as to form crystalline Si on a substrate early in the process.
摘要翻译： 公开了通过使用等离子体制造结晶Si的方法。 根据所公开的方法，循环地进行使用等离子体的硅（Si）沉积和还原处理，以便完全去除a-Si层，以便在该工艺的早期在衬底上形成晶体Si。
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28.发明授权Method of growing silicon and method of manufacturing solar cell using the same 有权生长硅的方法及使用其制造太阳能电池的方法公开(公告)号：US08003546B2
公开(公告)日：2011-08-23
申请号：US12461502
申请日：2009-08-13
申请人： Jung-hyun Lee , Chang-soo Lee , Dong-joon Ma
发明人： Jung-hyun Lee , Chang-soo Lee , Dong-joon Ma
IPC分类号： H01L21/31
CPC分类号： C01B33/027 , C01B33/029 , C01B33/03 , C01B33/035 , H01L31/182 , Y02E10/546 , Y02P20/544 , Y02P70/521
摘要： In a method of growing silicon (Si) using a reactor, a supercritical fluid including a silicon Si source and hydrogen flows in the reactor, and the Si source reacts with hydrogen. A base substrate of a solar cell may be formed with Si made using the method of growing silicon (Si). The supercritical fluid may be a fluid in which Si is not oxidized and may be, for example, a CO2 supercritical fluid with a pressure of about 60 to about 200 atm. The Si source may be TriChloroSilane (TCS) (SiCl3H) or SiH4.
摘要翻译： 在使用反应器生长硅（Si）的方法中，包括硅Si源和氢的超临界流体在反应器中流动，并且Si源与氢反应。 太阳能电池的基底可以由使用生长硅（Si）的方法制成的Si形成。 超临界流体可以是其中Si不被氧化的流体，并且可以是例如具有约60至约200atm压力的CO 2超临界流体。 Si源可以是三氯硅烷（TCS）（SiCl 3 H）或SiH 4。
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公开(公告)号：US20100307588A1
公开(公告)日：2010-12-09
申请号：US12801194
申请日：2010-05-27
申请人： Jung-hyun Lee , Dong-joon Ma
发明人： Jung-hyun Lee , Dong-joon Ma
IPC分类号： H01L31/0256 , H01L31/00
CPC分类号： H01L31/075 , H01L31/022466 , Y02E10/548
摘要： Solar cell structures including an n-type semiconductor layer, an i-type semiconductor layer on the n-type semiconductor layer, and a p-type semiconductor layer on the i-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer each respectively contacts a transparent conductive layer having a transparent conductive material.
摘要翻译： 包括在n型半导体层上的n型半导体层，i型半导体层和i型半导体层上的p型半导体层的太阳能电池结构。 n型半导体层和p型半导体层分别接触具有透明导电材料的透明导电层。
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公开(公告)号：US20100255219A1
公开(公告)日：2010-10-07
申请号：US12656823
申请日：2010-02-17
申请人： Xianyu Wenxu , Dong-joon Ma , Jung-hyun Lee
发明人： Xianyu Wenxu , Dong-joon Ma , Jung-hyun Lee
IPC分类号： H05B6/00
CPC分类号： H05B3/145 , H05B2214/04
摘要： Methods of preparing a carbon-based sheet are provided, the methods include aligning carbon-containing materials on a substrate and forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the carbon-containing materials. The carbon-based sheet may be a graphene sheet.
摘要翻译： 提供了制备碳基片材的方法，所述方法包括通过对包含含碳材料的基材进行退火处理，将基材上的含碳材料对准并在基板上形成碳基片材。 碳基片可以是石墨烯片。
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