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    ULTRA-HIGH PHOTOSENSITIVITY VERTICAL NANOWIRE ARRAYS FOR RETINAL PROSTHESIS
    22.
    发明申请
    ULTRA-HIGH PHOTOSENSITIVITY VERTICAL NANOWIRE ARRAYS FOR RETINAL PROSTHESIS 有权
    超高光敏性垂直纳米阵列

    公开(公告)号：US20140128972A1

    公开(公告)日：2014-05-08

    申请号：US13806089

    申请日：2011-06-21

    申请人： Massoud L. Khraiche ,  Gabriel Silva ,  Gert Cauwenberghs ,  Yu-Hwa Lo ,  Deli Wang ,  William Freeman

    发明人： Massoud L. Khraiche ,  Gabriel Silva ,  Gert Cauwenberghs ,  Yu-Hwa Lo ,  Deli Wang ,  William Freeman

    IPC分类号： A61N1/36 ,  A61F2/14 ,  H01L31/0352

    CPC分类号： A61N1/36046 ,  A61F2/14 ,  A61L27/18 ,  A61L2400/12 ,  A61L2430/16 ,  A61N1/0543 ,  H01L31/035227 ,  H01L31/035236 ,  C08L83/04 ,  C08L65/04

    摘要： A prosthetic retina for implantation in an eye having a defective retina is formed from an array of nanowires having a predetermined spatial distribution, density, size and shape implanted in close proximity to the retina. An electrical conductor is formed at a first end of all nanowires in the array of nanowires and placed in contact with a bias source which biases the array. A plurality of electrodes is located on a second end of each of one nanowire or a bundle of nanowires in the array. Each nanowire produces a photocurrent at a corresponding electrode in response to detection of light impinging on the array of nanowires and the photocurrent stimulates one or more neurons adapted for visual perception. In the preferred embodiment, the predetermined spatial distribution mimics a distribution of rods and cones in a normal eye.

    摘要翻译： 用于植入具有缺陷视网膜的眼睛中的假视网膜由具有植入在视网膜附近的预定空间分布，密度，大小和形状的纳米线阵列形成。 电导体形成在纳米线阵列中的所有纳米线的第一端，并与偏置源接触，偏压源偏置阵列。 多个电极位于阵列中的一个纳米线或纳米线束中的每一个的第二端上。 每个纳米线响应于入射到纳米线阵列上的光而在对应的电极处产生光电流，并且光电流刺激一个或多个适于视觉感知的神经元。 在优选实施例中，预定空间分布模拟正常眼睛中的棒和锥体的分布。

    WIRELESS POWER MECHANISMS FOR LAB-ON-A-CHIP DEVICES
    23.
    发明申请
    WIRELESS POWER MECHANISMS FOR LAB-ON-A-CHIP DEVICES 有权
    无线电设备的无线电力机构

    公开(公告)号：US20130285477A1

    公开(公告)日：2013-10-31

    申请号：US13884594

    申请日：2011-11-09

    申请人： Yu-Hwa Lo ,  Wen Qiao

    发明人： Yu-Hwa Lo ,  Wen Qiao

    IPC分类号： H02J17/00

    CPC分类号： B81B7/02 ,  H01L25/167 ,  H01L2924/0002 ,  H02J17/00 ,  H02J50/10 ,  H02J50/20 ,  H04B5/0031 ,  H04B5/0037 ,  H01L2924/00

    摘要： Methods, devices and systems are provided for wirelessly powering and controlling a lab-on-a-chip device. Direct current (DC) and alternating current (AC) signals can be produced at the lab-on-a-chip device in a wireless manner. In some configurations, integrated RF components and optoelectronic components of the lab-on-a-chip device are used to collaboratively produce the DC and AC signals. In other configurations only optoelectronic components on the lab-on-a-chip system can produce the DC and/or AC signals in response to incident light. By modulating the incident light, AC signals of various frequencies and waveforms can be generated. The DC and AC signals can be used by additional integrated electronic circuits and by a microfluidic chip lactated on the lab-on-a-chip device to control the behavior of the bioparticles in the microfluidic device.

    摘要翻译： 提供了用于无线供电和控制芯片实验室设备的方法，设备和系统。 直流（DC）和交流（AC）信号可以在无线方式的芯片实验室设备上产生。 在一些配置中，使用片上实验室器件的集成RF组件和光电子组件来协同产生DC和AC信号。 在其他配置中，只有芯片实验室上的光电元件才能响应入射光而产生直流和/或交流信号。 通过调制入射光，可以产生各种频率和波形的交流信号。 DC和AC信号可以由额外的集成电子电路和由芯片实验室上的乳化的微流控芯片使用，以控制微流体装置中的生物颗粒的行为。

    FLUIDIC FLOW CYTOMETRY DEVICES AND METHODS
    24.
    发明申请
    FLUIDIC FLOW CYTOMETRY DEVICES AND METHODS 有权
    流体流式细胞仪装置及方法

    公开(公告)号：US20130083315A1

    公开(公告)日：2013-04-04

    申请号：US13593488

    申请日：2012-08-23

    申请人： Yu-Hwa Lo ,  Sung Hwan Cho ,  Jose Morachis ,  Will Alaynick ,  Kendall Chuang ,  Nam Kim

    发明人： Yu-Hwa Lo ,  Sung Hwan Cho ,  Jose Morachis ,  Will Alaynick ,  Kendall Chuang ,  Nam Kim

    IPC分类号： G01J3/46 ,  G01J3/28 ,  G01J3/51

    CPC分类号： G01J3/46 ,  G01J3/28 ,  G01J3/51 ,  G01N15/1434 ,  G01N15/1459 ,  G01N2015/0065 ,  G01N2015/144 ,  G01N2015/149 ,  G01P5/26

    摘要： Devices, systems and methods facilitate analyzing, identifying and sorting particles in fluids, including cytometry devices and techniques. The described techniques can be used in a variety of applications such as in chemical or biological testing and diagnostic measurements. One exemplary flow cytometry device includes a channel that is capable of conducting a fluid containing at least one particle and also capable of allowing light be transmitted to and from the channel. The flow cytometry device also includes a lens that is positioned between the channel and a color filter. The lens directs at least a portion of light transmitted from the channel to the color filter. The color filter includes a plurality of zones, where each zone is adapted to allow transmission of only a particular spectral range of light. The flow cytometry device further includes a detector configured to receive the light that is transmitted through the color filter.

    摘要翻译： 装置，系统和方法便于分析，识别和分选流体中的颗粒，包括细胞计数装置和技术。 所描述的技术可以用于各种应用中，例如在化学或生物测试和诊断测量中。 一个示例性的流式细胞术装置包括能够传导含有至少一个粒子的流体并且还能够允许光从通道传出的通道。 流式细胞术装置还包括位于通道和滤色器之间的透镜。 透镜将从通道传输的光的至少一部分引导到滤色器。 滤色器包括多个区域，其中每个区域适于仅允许传输特定光谱范围的光。 流式细胞术装置还包括被配置为接收透过滤色器的光的检测器。

    Fluidic adaptive lens systems with pumping systems
    25.
    发明授权
    Fluidic adaptive lens systems with pumping systems 有权
    具有泵送系统的流体自适应透镜系统

    公开(公告)号：US07826145B2

    公开(公告)日：2010-11-02

    申请号：US11577905

    申请日：2005-11-04

    申请人： Nicole B. Justis ,  De-Ying Zhang ,  Yu-Hwa Lo

    发明人： Nicole B. Justis ,  De-Ying Zhang ,  Yu-Hwa Lo

    IPC分类号： G02B3/12 ,  G02B7/02

    CPC分类号： G02B26/005 ,  G02B3/14

    摘要： The present invention in various embodiments relates to a variety of different types of fluidic adaptive lens systems, pumping systems for implementation in such lens systems, other systems employing such lens systems, and related methods of fabrication. In at least some embodiments, the present invention relates to a lens system that includes a reservoir having at least one flexible wall, a first actuator coupled in relation to the reservoir, and a terminal at which is located at least one of an integrated fluidic lens and a port configured to be coupled to an external fluidic lens. The terminal is coupled to at least one of the reservoir and the actuator, and at least one of the actuator and a first pumping system including the actuator is capable of causing fluid to be moved at least one of from the reservoir toward the terminal, and from the terminal toward the reservoir.

    摘要翻译： 各种实施例中的本发明涉及各种不同类型的流体自适应透镜系统，用于在这种透镜系统中实现的泵送系统，使用这种透镜系统的其它系统以及相关的制造方法。 在至少一些实施例中，本发明涉及一种透镜系统，其包括具有至少一个柔性壁的储存器，相对于储存器联接的第一致动器，以及位于集成流体透镜 以及配置为联接到外部流体透镜的端口。 所述端子联接到所述储存器和所述致动器中的至少一个，并且所述致动器和包括所述致动器的第一泵送系统中的至少一个能够使流体从所述储存器中的至少一个向所述端子移动，以及 从码头到水库。

    Hetero-interface avalance photodetector
    26.
    发明授权
    Hetero-interface avalance photodetector 有权

    公开(公告)号：US06583482B2

    公开(公告)日：2003-06-24

    申请号：US09971316

    申请日：2001-10-03

    申请人： Alexandre Pauchard ,  Yu-Hwa Lo

    发明人： Alexandre Pauchard ,  Yu-Hwa Lo

    IPC分类号： H01L31107

    CPC分类号： H01L31/1075 ,  H01L31/02327 ,  H01L31/03046 ,  Y02E10/544

    摘要： An avalanche photodetector (APD) is made from composite semiconductor materials. The absorption region of the APD is formed in a n-type InGaAs layer. The multiplication region of the APD is formed in a p-type silicon layer. The two layers are bonded together. The p-type silicon layer may be supported on an n+ type silicon substrate. A p-n junction formed at the interface between the silicon layer and the substrate. Alternatively, the n-type InGaAs layer may be supported on an InP substrate. In this case, a p-n junction is formed by making n-doped surface regions in the p-type silicon superlayer. In either case, the p-n junction is reverse biased for avalanche multiplication of charge carriers. The maximum of the electric field distribution in the APD under reverse bias operating conditions is located at p-n junction. This maximum is at a distance equal to about the thickness of the p-type silicon layer away from the absorption region. The electric field values in the absorption region depend primarily on the thickness and doping level of the p-type silicon layer. The electric field values in the absorption region are controllably set for obtaining high carrier velocities in the absorption region without causing carrier tunneling.

    Methods for growing defect-free heteroepitaxial layers
    27.
    发明授权
    Methods for growing defect-free heteroepitaxial layers 失效
    生长无缺陷异质外延层的方法

    公开(公告)号：US06184144B2

    公开(公告)日：2001-02-06

    申请号：US09166962

    申请日：1998-10-06

    申请人： Yu-Hwa Lo

    发明人： Yu-Hwa Lo

    IPC分类号： H01L21311

    CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B25/18

    摘要： New methods for growing threading dislocation free heteroepitaxy are proposed and investigated theoretically. The first method contains four key steps: Stranski-Krastanov island formation, strain relaxation by defect nucleation, in-situ defect removal, and island coalescence. The central idea is that the defects are utilized to relax the lattice strain, and as soon as the strain is relaxed, the dislocation segments are removed that will propagate to the surface of the film. As a result, the heteroepitaxial film is expected to be relaxed but be free of harmful threading dislocations regardless of the degree of lattice mismatch. In the second method, single crystal islands or patches are grown initially which are a few hundred nanometers or less in diameter. The patches serve as nucleation sites for growth of single crystal heteroepitaxial layers. Because of the very small patch size, the stress (normal stress and shear stress) due to lattice mismatch will be reduced significantly. As the growth proceeds, the size of nucleation islands increases in both vertical and lateral directions and the discrete islands soon coalesce to form a continuous thin film. If all coalescing islands have the same or nearly the same crystal orientation, then the net stress will be close to zero, and a smooth, defect-free heteroepitaxial layer can be grown to any thickness.

    摘要翻译： 在理论上提出和研究了用于生长穿透无位错异质外延的新方法。 第一种方法包括四个关键步骤：Stranski-Krastanov岛形成，缺陷成核的应变弛豫，原位缺陷去除和岛聚结。 中心思想是利用缺陷来松弛晶格应变，并且一旦应变松弛，就去除位错段，其将传播到膜的表面。 结果，异质外延膜预期松弛，但不考虑有害的穿透位错，而与晶格失配的程度无关。 在第二种方法中，首先生长直径为几百纳米或更小的单晶岛或斑块。 这些贴剂用作单晶异质外延层生长的成核位点。 由于贴片尺寸非常小，因晶格失配引起的应力（正应力和剪切应力）将大大降低。 随着生长的进行，成核岛的大小在垂直方向和横向方向都增加，并且离散的岛很快聚结以形成连续的薄膜。 如果所有聚结岛具有相同或几乎相同的晶体取向，则净应力将接近零，并且可以生长任何厚度的平滑无缺陷异质外延层。

    Strain-compensated multiple quantum well laser structures
    28.
    发明授权
    Strain-compensated multiple quantum well laser structures 失效
    应变补偿多量子阱激光器结构

    公开(公告)号：US5617436A

    公开(公告)日：1997-04-01

    申请号：US486046

    申请日：1995-06-07

    申请人： Yu-Hwa Lo

    发明人： Yu-Hwa Lo

    IPC分类号： H01S5/187 ,  H01S3/18 ,  H01S3/085

    CPC分类号： H01S5/187

    摘要： Grating-coupled surface emitting laser structures utilize strain-compensated multiple quantum wells as the laser gain medium, and are used in combination with a very high grating coupling efficiency to reduce both output beam spot size and overall device size. The lasers are designed with grating coupling coefficients that are much higher (e.g., greater than 150 cm.sup.-1) than those employed in conventional grating coupled lasers to achieve a substantial increase in the laser energy coupled vertically through the top surface of the laser. This permits a substantial reduction of the output laser beam size so that it can be easily matched to multimode, and even single mode optical fibers. The use of the very high coupling coefficient is made possible because of the substantially increased optical gain provided by the strain-compensated multiple quantum well structure which offsets the substantially increased optical losses that are induced in the horizontal laser cavity by the increased grating coupling efficiency. Preferably, the increased coupling efficiency is achieved by moving the quantum well structure close to the surface gratings employed for the grating coupling, and increasing the refractive index difference between the grating material and a transparent electrode covering the gratings.

    摘要翻译： 光栅耦合表面发射激光器结构利用应变补偿多量子阱作为激光增益介质，并结合非常高的光栅耦合效率来减少输出光束尺寸和整体器件尺寸。 激光器被设计为具有比常规光栅耦合激光器中采用的光栅耦合系数高得多（例如，大于150cm -1），以实现通过激光器顶表面垂直耦合的激光能量的显着增加。 这允许输出激光束尺寸的显着降低，使得其可以容易地与多模，甚至单模光纤匹配。 由于由应变补偿的多量子阱结构提供的基本上增加的光学增益，通过提高的光栅耦合效率来补偿在水平激光器腔中感应到的基本增加的光学损耗，因此使得非常高的耦合系数成为可能。 优选地，增加的耦合效率通过将量子阱结构移动靠近用于光栅耦合的表面光栅，并且增加光栅材料和覆盖光栅的透明电极之间的折射率差来实现。

    Microfluidics with wirelessly powered electronic circuits
    29.
    发明授权
    Microfluidics with wirelessly powered electronic circuits 有权

    公开(公告)号：US10024819B2

    公开(公告)日：2018-07-17

    申请号：US13880973

    申请日：2011-10-21

    申请人： Yu-Hwa Lo ,  Wen Qiao ,  Gyoujin Cho ,  Hwiwon Kang

    发明人： Yu-Hwa Lo ,  Wen Qiao ,  Gyoujin Cho ,  Hwiwon Kang

    IPC分类号： G01N27/447 ,  B01L3/00 ,  B01J19/00 ,  G01N15/14

    摘要： Techniques, devices and systems are described for incorporating a printed circuit with a microfluidic device and wirelessly powering the microfluidic device. In one aspect, a microfluidic device includes a substrate with a fluidic channel to provide a path for a fluid with particles. The fluidic channel includes fluid inlet and outlet. A pair of electrodes near the inlet and the outlet guides the particles toward a center of the fluidic channel using negative-dielectrophoresis (DEP) effect in response to an alternating current (AC) frequency voltage received at the pairs of electrodes. Additional pairs of electrodes are disposed along a border of the fluidic channel between the pairs of electrodes near the inlet and the outlet of the fluidic channel to isolate a subpopulation of the particles using positive and negative DEP effects in response to AC voltages of different frequencies received at different ones of the additional pairs of electrodes.