公开(公告)号：US20070109003A1

公开(公告)日：2007-05-17

申请号：US11465888

申请日：2006-08-21

Applicant: Jianou Shi ,  Xiafang Zhang ,  Shiyou Pei ,  Shu Huang ,  Dennis Yeh ,  Jeffrey Rzepiela ,  Yiping Feng ,  Ahmad Khan

Inventor： Jianou Shi ,  Xiafang Zhang ,  Shiyou Pei ,  Shu Huang ,  Dennis Yeh ,  Jeffrey Rzepiela ,  Yiping Feng ,  Ahmad Khan

IPC: G01R31/02

CPC classification number: G01R31/2831 ,  G01R31/2856 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties.

Abstract translation: 提供了用于测量晶片性能的测试垫，方法和系统。 形成在晶片上的一个测试焊盘包括测试结构，其被配置为使得可以测量测试结构的一个或多个电特性。 测试垫还包括在测试结构和晶片之间形成的导电层。 导电层防止在测量期间位于导电层和晶片之间的测试结构下方的结构影响测试结构的一个或多个电性能。 用于评估晶片的等离子体损伤的一种方法包括测量形成在晶片上的测试结构的一个或多个电特性，并使用一个或多个电性质确定表征测试结构的等离子体损伤的指标。

公开(公告)号：US20060250611A1

公开(公告)日：2006-11-09

申请号：US11365221

申请日：2006-03-01

Applicant: Vamsi Velidandla ,  Anoop Somanchi ,  Ronny Soetarman ,  Steven Meeks

Inventor： Vamsi Velidandla ,  Anoop Somanchi ,  Ronny Soetarman ,  Steven Meeks

IPC: G01N21/88

CPC classification number: G01N21/94 ,  G01B11/303 ,  G01B11/306 ,  G01N21/21 ,  G01N21/211 ,  G01N21/55 ,  G01N21/9501 ,  G01N21/9503 ,  G01N2021/556 ,  H01L22/12

Abstract: In one embodiment, a system to inspect an edge region of a wafer, comprises a surface analyzer assembly comprising a radiation targeting assembly that targets a radiation beam onto a surface of the wafer; a reflected radiation collection assembly to collect radiation reflected from a surface of the wafer; means for rotating the surface analyzer assembly about an edge surface of the wafer; and means for detecting one or more defects in the edge region of the wafer.

Abstract translation: 在一个实施例中，检查晶片的边缘区域的系统包括表面分析器组件，其包括将辐射束对准到晶片表面上的辐射瞄准组件; 用于收集从晶片表面反射的辐射的反射辐射收集组件; 用于使表面分析器组件围绕晶片的边缘表​​面旋转的装置; 以及用于检测晶片边缘区域中的一个或多个缺陷的装置。

公开(公告)号：US07130036B1

公开(公告)日：2006-10-31

申请号：US10663603

申请日：2003-09-16

Applicant: Lionel Kuhlmann ,  Wayne McMillan

Inventor： Lionel Kuhlmann ,  Wayne McMillan

IPC: G01N21/88

CPC classification number: G01N21/9501 ,  G01N21/47 ,  G01N21/9503 ,  G01N21/95607 ,  G01N21/95623

Abstract: Methods for inspecting a wafer are provided. One method includes directing light to a center portion and an edge portion of a wafer in a single scan. The method also includes detecting light scattered from the center portion using a first detection channel and detecting light scattered from the edge portion using a second detection channel. Another method for inspecting an edge portion of a wafer includes scanning the edge portion of the wafer with light. The method also includes separately detecting different portions of light scattered from the edge portion. In addition, the method includes separating light scattered from edge features in the edge portion from other light scattered from the edge portion. The method further includes detecting defects in the edge portion of the wafer using the other scattered light.

Abstract translation: 提供了检查晶片的方法。 一种方法包括在单次扫描中将光引导到晶片的中心部分和边缘部分。 该方法还包括使用第一检测通道来检测从中心部分散射的光，并且使用第二检测通道来检测从边缘部分散射的光。 用于检查晶片的边缘部分的另一种方法包括用光扫描晶片的边缘部分。 该方法还包括分别检测从边缘部分散射的光的不同部分。 此外，该方法包括将从边缘部分的边缘特征散射的光与从边缘部分散射的其它光分离。 该方法还包括使用其他散射光检测晶片的边缘部分中的缺陷。

公开(公告)号：US07130029B2

公开(公告)日：2006-10-31

申请号：US09956850

申请日：2001-09-20

Applicant: Dan Wack ,  Ady Levy ,  Kyle A. Brown ,  Gary Bultman ,  Mehrdad Nikoonahad ,  John Fielden

Inventor： Dan Wack ,  Ady Levy ,  Kyle A. Brown ,  Gary Bultman ,  Mehrdad Nikoonahad ,  John Fielden

IPC: G01N21/88

CPC classification number: G03F7/70708 ,  G01N21/211 ,  G01N21/47 ,  G01N21/636 ,  G01N21/64 ,  G01N21/9501 ,  G01N2021/646 ,  G01N2021/8825 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065 ,  G03F7/70658 ,  G03F7/707 ,  H01J2237/31701 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, an adhesion characteristic and a thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

公开(公告)号：US07126699B1

公开(公告)日：2006-10-24

申请号：US10688503

申请日：2003-10-17

Applicant: Tim Wihl ,  Stephen Hiebert ,  Frank Kole ,  Richard Schmidley

Inventor： Tim Wihl ,  Stephen Hiebert ,  Frank Kole ,  Richard Schmidley

IPC: G01B11/02

CPC classification number: G01B11/0608 ,  G01N21/9501

Abstract: Systems and methods for multi-dimensional metrology and inspection of a specimen such as a bumped wafer are provided. One method includes scanning the specimen with partial oblique illumination to form an image of the structure, either through the normal collection angle or through an oblique collection angle. The method also includes integrating an intensity of the image and determining a height of the structure from the integrated intensity. The integrated intensity may be approximately proportional or inversely proportional to the height of the structure. In addition, the method may include scanning the specimen with bright field illumination to form a bright field image of the specimen. The method may also include determining a lateral dimension of the structure from the bright field image. Furthermore, the method may include detecting defects on the specimen from the bright field image or the obliquely-illuminated image.

Abstract translation: 提供了诸如凸起晶片之类的样本的多维计量和检查的系统和方法。 一种方法包括用部分倾斜照射扫描样品，以通过正常收集角度或通过倾斜收集角度形成结构图像。 该方法还包括整合图像的强度并根据积分强度确定结构的高度。 积分强度可以与结构的高度大致成比例或成反比。 此外，该方法可以包括用亮场照明扫描样品以形成样品的明场图像。 该方法还可以包括从亮场图像确定结构的横向尺寸。 此外，该方法可以包括从亮场图像或倾斜照明图像检测样本上的缺陷。

公开(公告)号：US07123356B1

公开(公告)日：2006-10-17

申请号：US10679857

申请日：2003-10-06

Applicant: Stan Stokowski ,  David Alles

Inventor： Stan Stokowski ,  David Alles

IPC: G01N21/00

CPC classification number: G03F1/84 ,  G01N21/95607 ,  G01N2021/95615 ,  G01N2021/95676

Abstract: Methods and systems for inspecting a reticle are provided. In an embodiment, a method may include forming an aerial image of the reticle using a set of exposure conditions. The reticle may include optical proximity correction (OPC) features. The method may also include detecting defects on the reticle by comparing the aerial image to a reference image stored in a database. The reference image may be substantially optically equivalent to an image of the reticle that would be printed on a specimen by an exposure system under the set of exposure conditions. The reference image may not include images of the OPC features. Therefore, a substantial portion of the defects include defects that would be printed onto the specimen by the exposure system using the reticle under the set of exposure conditions. The method may also include indicating the defects that are detected in critical regions of the reticle.

Abstract translation: 提供了用于检查掩模版的方法和系统。 在一个实施例中，方法可以包括使用一组曝光条件来形成标线的空间图像。 掩模版可以包括光学邻近校正（OPC）特征。 该方法还可以通过将空间图像与存储在数据库中的参考图像进行比较来检测掩模版上的缺陷。 参考图像可以基本上等同于在一组曝光条件下通过曝光系统在样本上打印的掩模版的图像。 参考图像可能不包括OPC特征的图像。 因此，大部分缺陷包括在暴露条件下通过使用掩模版的曝光系统在样品上印刷的缺陷。 该方法还可以包括指示在掩模版的关键区域中检测到的缺陷。

公开(公告)号：US20060215289A1

公开(公告)日：2006-09-28

申请号：US11432609

申请日：2006-05-11

Applicant: Zhen Hou ,  Ronny Soetarman ,  Vamsi Velidandla ,  Steven Meeks

Inventor： Zhen Hou ,  Ronny Soetarman ,  Vamsi Velidandla ,  Steven Meeks

IPC: G11B5/02 ,  G11B5/596

CPC classification number: G11B5/59627

Abstract: In one embodiment, a surface analyzer system comprises a radiation targeting assembly to target radiation onto a surface, a reflected radiation collecting assembly that collects radiation reflected from the surface, and a signal processing module. The signal processing module generates an image of magnetic characteristics of the magnetic disk, wherein the image comprises a plurality of servo sector arcs, locates a sample of points on a plurality of the servo sector arcs, fits a circle to the sample of points on each of the plurality of servo sector arcs, and determines at least one pivot-to-gap measurement from the radius of the circles.

Abstract translation: 在一个实施例中，表面分析器系统包括将辐射瞄准到表面上的辐射瞄准组件，收集从表面反射的辐射的反射辐射收集组件和信号处理模块。 信号处理模块生成磁盘的磁特性的图像，其中图像包括多个伺服扇区弧，定位多个伺服扇区弧上的点样本，将圆适合于每个点上的点样本 并且从圆的半径确定至少一个枢轴对间隙测量。

公开(公告)号：US07092082B1

公开(公告)日：2006-08-15

申请号：US10723585

申请日：2003-11-26

Applicant: Victor C. Dardzinski

Inventor： Victor C. Dardzinski

IPC: G01N21/88 ,  G01V8/00

CPC classification number: G01N21/9501

Abstract: An apparatus for inspecting a semiconductor wafer includes a vertically movable chuck plate for holding said semiconductor wafer, a first light source for illuminating an area on the wafer, a main imaging camera for detecting light scattered from the surface of the wafer and a main imaging lens for imaging the illuminated area of the wafer onto the camera. The apparatus additionally includes an auto-focus system for maintaining the wafer within the depth of field of the lens focal point. The auto-focus system comprises a second light source with associated optics, a linear position sensor with associated optics for detecting light from the second light source that is reflected off the illuminated area of the wafer, circuitry for converting the light detected by the sensor into an output voltage which is proportional to the relative vertical position of the illuminated area of the wafer. In use, the output voltage can be used to compensate for vertical deviations in the topology of said patterned wafer by vertically moving the chuck plate in real-time so that the lens images the area on the wafer onto the camera in focus.

Abstract translation: 用于检查半导体晶片的装置包括用于保持所述半导体晶片的可垂直移动的卡盘板，用于照射晶片上的区域的第一光源，用于检测从晶片表面散射的光的主成像相机和主成像透镜 用于将晶片的照明区域成像到相机上。 该装置还包括用于将晶片保持在透镜焦点的景深范围内的自动对焦系统。 自动对焦系统包括具有相关联的光学器件的第二光源，具有相关光学器件的线性位置传感器，用于检测来自第二光源的光，其被从晶片的照射区域反射，用于将由传感器检测到的光转换成 与晶片的照射区域的相对垂直位置成比例的输出电压。 在使用中，输出电压可用于通过实时垂直移动卡盘板来补偿所述图案化晶片的拓扑中的垂直偏差，使得透镜将晶片上的区域成像到相机上的焦点。

公开(公告)号：US07027146B1

公开(公告)日：2006-04-11

申请号：US10185308

申请日：2002-06-27

Applicant: Ian Smith ,  Christian Wolters ,  Yu Guan ,  Don Brayton

Inventor： Ian Smith ,  Christian Wolters ,  Yu Guan ,  Don Brayton

IPC: G01N21/88

CPC classification number: G01N21/93 ,  G01N21/4785 ,  G01N21/94 ,  G01N21/9501

Abstract: Methods for forming calibration standards for an inspection system and calibration standards are provided. One method includes scanning a first and a second specimen with an optical system. Master standard particles having a lateral dimension traceable to a national or international authority or first principles measurements are deposited on the first specimen. Product standard particles are deposited on the second specimen. In addition, the method includes determining a lateral dimension of the product standard particles by comparing data generated by scanning the two specimens. One calibration standard includes particles having a lateral dimension of less than about 100 nm deposited on a specimen. A distribution of the lateral dimension has a full width at half maximum of less than about 3%. The uncertainty of the lateral dimension is less than about 2%. Therefore, the standard meets the requirements for the 130 nm technology generation of semiconductor devices.

Abstract translation: 提供了一种用于形成检查系统和校准标准的校准标准的方法。 一种方法包括用光学系统扫描第一和第二样本。 具有可追溯到国家或国际权威的横向尺寸或第一原理测量的主标准颗粒沉积在第一标本上。 产品标准颗粒沉积在第二个样品上。 此外，该方法包括通过比较通过扫描两个样本产生的数据来确定产品标准颗粒的横向尺寸。 一个校准标准包括沉积在样品上的具有小于约100nm的横向尺寸的颗粒。 横向尺寸的分布具有小于约3％的半高宽度。 侧向尺寸的不确定度小于约2％。 因此，该标准符合130nm技术生产半导体器件的要求。

公开(公告)号：US06968253B2

公开(公告)日：2005-11-22

申请号：US10431133

申请日：2003-05-07

Applicant: Chris Mack ,  Robert Jones ,  Jeffrey Byers

Inventor： Chris Mack ,  Robert Jones ,  Jeffrey Byers

IPC: G03F7/20 ,  G06F19/00

CPC classification number: G03F7/705 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633

Abstract: A computer-implemented method and a carrier medium adapted to generate a set of process parameter values for a lithography process based upon both critical dimension and overlay effect analyses of process parameter value variations is provided. In some cases, the computer-implemented method and a carrier medium may be configured to select a set of process parameter values to collectively minimize the number critical dimension and overlay variation errors produced within an image fabricated from the lithography process.

Abstract translation: 提供了一种计算机实现的方法和适用于基于过程参数值变化的临界尺寸和覆盖效应分析来生成用于光刻工艺的一组工艺参数值的载体介质。 在一些情况下，计算机实现的方法和载体介质可以被配置为选择一组过程参数值以共同地最小化在从光刻工艺制造的图像内产生的数量临界尺寸和叠加变化误差。