公开(公告)号：US20160093319A1

公开(公告)日：2016-03-31

申请号：US14962950

申请日：2015-12-08

申请人： Seagate Technology LLC

发明人： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  G01R33/007 ,  G01R33/025 ,  G01R33/098 ,  G11B5/3916 ,  G11B5/398 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121

摘要： A magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled to a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.

摘要翻译： 磁阻（MR）传感器包括磁耦合到侧屏蔽元件的合成反铁磁（SAF）结构。 SAF结构包括至少一个磁性非晶层，其是铁磁材料和耐火材料的合金。 非晶磁性层可以与非磁性层接触并且与与非磁性层的相反表面接触的层反铁磁耦合。

公开(公告)号：US20150170686A1

公开(公告)日：2015-06-18

申请号：US14105922

申请日：2013-12-13

申请人： Seagate Technology LLC

发明人： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  G01R33/007 ,  G01R33/025 ,  G01R33/098 ,  G11B5/3916 ,  G11B5/398 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121

摘要： Implementations disclosed herein provide for a magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.

摘要翻译： 本文公开的实施例提供了一种磁阻（MR）传感器，其包括磁耦合侧屏蔽元件的合成反铁磁（SAF）结构。 SAF结构包括至少一个磁性非晶层，其是铁磁材料和耐火材料的合金。 非晶磁性层可以与非磁性层接触并且与与非磁性层的相反表面接触的层反铁磁耦合。

公开(公告)号：US08238062B2

公开(公告)日：2012-08-07

申请号：US12491838

申请日：2009-06-25

申请人： Yonghua Chen ,  Jiaoming Qiu ,  Xilin Peng ,  Kaizhong Gao

发明人： Yonghua Chen ,  Jiaoming Qiu ,  Xilin Peng ,  Kaizhong Gao

IPC分类号： G11B5/39

CPC分类号： G01R33/098 ,  G11B5/3912 ,  G11B5/3916 ,  G11B5/398 ,  H01L43/08

摘要： In some embodiments, a magnetic reader comprises first and second shields extending from an air bearing surface (ABS), a magnetoresistive stack is located between the first and second shields, and a flux guide is separated from the magnetoresistive stack while connecting the first and second shields. The flux guide magnetically couples the distal end of the magnetoresistive stack to the first shield.

摘要翻译： 在一些实施例中，磁读取器包括从空气轴承表面（ABS）延伸的第一和第二屏蔽，磁阻堆叠位于第一和第二屏蔽之间，并且磁通引导件与磁阻堆叠分离，同时连接第一和第二屏蔽 盾牌 磁通引导件将磁阻堆叠的远端磁耦合到第一屏蔽层。

公开(公告)号：US07616411B2

公开(公告)日：2009-11-10

申请号：US11392199

申请日：2006-03-28

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916

摘要： A current perpendicular to plane (CPP) magnetoresistive sensor having a front edge that is recessed from the air bearing surface (ABS). The sensor includes a pinned layer structure a free layer structure and a spacer layer sandwiched between the free layer and the pinned layer. The free layer is an AP coupled structure that includes a first magnetic layer F1 a second magnetic layer F2 and a coupling layer sandwiched between F1 and F2. The first magnetic layer F1 extends to the ABS while the other sensor layers terminate at the recessed front edge. In this way, the F1 layer acts as a flux guide that reacts to a magnetic field from a magnetic medium. The AP coupled structure of the free layer allows each magnetic layer F1 and F2 to be thicker than would be possible in a conventional single layer free layer, which increases the GMR effect of the sensor and increases the effectiveness of the flux guide (F2).

摘要翻译： 垂直于平面（CPP）磁阻传感器的电流具有从空气轴承表面（ABS）凹陷的前边缘。 传感器包括钉扎层结构，自由层结构和夹在自由层和钉扎层之间的间隔层。 自由层是AP耦合结构，其包括第一磁性层F1，第二磁性层F2和夹在F1和F2之间的耦合层。 第一磁性层F1延伸到ABS，而其它传感器层终止于凹进的前边缘。 以这种方式，F1层用作与来自磁介质的磁场反应的磁通引导件。 自由层的AP耦合结构允许每个磁性层F1和F2比在传统的单层自由层中可能更厚，这增加了传感器的GMR效应并且增加了磁通（F2）的有效性。

公开(公告)号：US20090190270A1

公开(公告)日：2009-07-30

申请号：US12022538

申请日：2008-01-30

申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.

摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流 其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域 所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化 沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。 因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（ 上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

公开(公告)号：US07379279B2

公开(公告)日：2008-05-27

申请号：US11409699

申请日：2006-04-24

申请人： Kenji Noma

发明人： Kenji Noma

IPC分类号： G11B5/39

CPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3272 ,  H01L43/10

摘要： A soft magnetic layer is made of nickel iron alloy containing crystals of the face-centered cubic lattice and crystals of the body-centered cubic lattice. The face-centered cubic lattice serves to establish a soft magnetic property in the nickel iron alloy. The body-centered cubic lattice contributes to reduction in the electric resistance of the magnetoresistive film as well as to improvement of the magnetoresistive ratio of the magnetoresistive film. Even if the magnetoresistive film is further reduced in size, the magnetoresistive film can sufficiently be prevented from suffering from an increase in the temperature. Even if a sensing current of a larger current value is supplied to the magnetoresistive film, the magnetoresistive film is reliably prevented from deterioration in the characteristics as well as destruction.

摘要翻译： 软磁性层由镍铁合金制成，含有面心立方晶格晶体和体心立方晶格晶体。 面心立方晶格用于在镍铁合金中建立软磁性能。 体心立方晶格有助于降低磁阻膜的电阻以及改善磁阻膜的磁阻比。 即使磁阻膜的尺寸进一步减小，也可以充分防止磁阻膜的温度升高。 即使向磁阻膜提供较大电流值的感测电流，可以可靠地防止磁阻膜的特性劣化以及破坏。

公开(公告)号：US07352540B1

公开(公告)日：2008-04-01

申请号：US11017170

申请日：2004-12-20

申请人： Mark Lee Watson ,  Francis Campos ,  April Lynn Alstrin

发明人： Mark Lee Watson ,  Francis Campos ,  April Lynn Alstrin

IPC分类号： G11B5/39 ,  G11B5/31

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/00821 ,  G11B5/3916 ,  G11B2005/3996

摘要： A giant magneto-resistive (GMR) transducer for reading data signals magnetically recorded on tape includes a GMR sensor and a separation structure formed on a front edge of the GMR sensor. The GMR sensor reads data signals magnetically recorded on a tape located at a head-tape interface. The separation structure physically separates the GMR sensor from the head-tape interface. The separation structure includes at least one film formed of at least one of non-magnetic and ferromagnetic materials such that the separation structure isolates the GMR sensor from physical contact with the tape at the head-tape interface while maintaining the ability of the GMR sensor to read data signals magnetically recorded on the tape even though the GMR sensor is physically separated from the tape at the head-tape interface. The separation structure may include an under-layer film and an isolation film. The GMR transducer is fabricated by a series of fabrication steps.

摘要翻译： 用于读取磁性记录在磁带上的数据信号的巨磁阻（GMR）传感器包括GMR传感器和形成在GMR传感器前缘上的分离结构。 GMR传感器读取磁性记录在位于磁头磁带接口的磁带上的数据信号。 分离结构将GMR传感器与头带接口物理分离。 分离结构包括由非磁性材料和铁磁材料中的至少一种形成的至少一个膜，使得分离结构将GMR传感器与头带界面处的带的物理接触隔离，同时保持GMR传感器的能力 读取在磁带上磁性地记录的数据信号，即使GMR传感器在磁头磁带接口处与磁带物理分离。 分离结构可以包括下层膜和隔离膜。 GMR传感器通过一系列制造步骤制造。

公开(公告)号：US07259943B2

公开(公告)日：2007-08-21

申请号：US10826127

申请日：2004-04-16

申请人： Akio Furukawa ,  Yoshihiko Kakihara

发明人： Akio Furukawa ,  Yoshihiko Kakihara

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A magnetic head using magnetoresistive effect comprising a magnetic sensing portion formed of a magnetoresistive effect element. The magnetic sensing portion includes a lamination layer structure portion which includes at least a free layer, a fixed layer made of a ferromagnetic material, an antiferromagnetic layer and a spacer layer interposed between the free layer and the fixed layer are laminated with each other. The lamination layer structure portion includes a magnetic flux introducing layer. The lamination layer structure portion has at its lamination layer direction opposing side surfaces formed of one flat surface or continuous one curved surface over at least the free layer, the spacer layer and the fixed layer. A hard magnetic layer for maintaining a magnetic stability of the free layer is disposed in direct contact with the opposing surfaces or through an insulating layer.

摘要翻译： 一种使用磁阻效应的磁头，包括由磁阻效应元件形成的磁感测部分。 磁感应部分包括层压层结构部分，其至少包括自由层，由铁磁材料制成的固定层，反铁磁层和插入在自由层和固定层之间的间隔层彼此层叠。 层叠层结构部分包括磁通量引入层。 层压层结构部分在其层叠层方向上具有相对于至少自由层，间隔层和固定层上的一个平坦表面或连续的一个曲面形成的侧表面。 用于保持自由层的磁稳定性的硬磁性层被设置成与相对表面直接接触或通过绝缘层。

公开(公告)号：US07237322B2

公开(公告)日：2007-07-03

申请号：US10976661

申请日：2004-10-29

申请人： Hardayal Singh Gill

发明人： Hardayal Singh Gill

IPC分类号： H04R31/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/40 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49055

摘要： A method for making a tunnel valve head with a flux guide. The tunnel valve sensor is created by forming a tunnel valve at a first shield layer. The tunnel valve includes a free layer distal to the first shield layer, a first insulation layer deposited over the first shield layer and around the tunnel valve, a flux guide formed over the first insulation layer and coupling to the tunnel valve at the free layer, a second insulation layer formed over the flux guide and a second shield layer formed over the second insulation layer. The flux guide and the free layer are physically isolated by the first and second insulation layers to prevent current shunts therefrom. The structure achieves physical connection between the flux guide and the free layer and insulates the flux guide from the shields.

摘要翻译： 一种用于制造具有通量引导件的隧道阀头的方法。 隧道阀传感器是通过在第一屏蔽层处形成隧道阀来产生的。 所述隧道阀包括远离所述第一屏蔽层的自由层，沉积在所述第一屏蔽层上并围绕所述隧道阀的第一绝缘层，形成在所述第一绝缘层上并且在所述自由层处连接到所述隧道阀的磁通引导件， 形成在所述磁通引导件上的第二绝缘层和形成在所述第二绝缘层上的第二屏蔽层。 通量引导件和自由层通过第一和第二绝缘层物理隔离，以防止其分流。 该结构实现了磁通引导件和自由层之间的物理连接，并使焊剂引导件与屏蔽件绝缘。

公开(公告)号：US07170721B2

公开(公告)日：2007-01-30

申请号：US10183329

申请日：2002-06-25

申请人： Andrew L. Wu

发明人： Andrew L. Wu

IPC分类号： G11B5/39 ,  G11B5/31

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3133 ,  G11B5/3146 ,  G11B5/3916 ,  G11B5/40 ,  G11B5/4893 ,  G11B2005/3996

摘要： A flux guide protected magnetoresistive sensor in a tape drive read/write head is presented. The magnetoresistive sensor has a tape bearing surface, and includes a magnetoresistive sensing element and a flux guide disposed on a surface of the magnetoresistive sensing element to form a portion of the tape bearing surface.

摘要翻译： 介绍了磁带驱动读/写磁头中的磁通导向保护磁阻传感器。 磁阻传感器具有带状表面，并且包括磁阻感测元件和设置在磁阻感测元件的表面上以形成带状表面的一部分的磁通引导件。