Abstract:
A gated electron-emitter is fabricated according to the process in which charged particles are directed towards a track-susceptible layer (48) to form charged-particle tracks (50B.sub.1) through the track-susceptible layer. Apertures (52.sub.1) are formed through the track-susceptible layer by etching along the charged-particle tracks. A gate layer (46) is etched through the apertures to form gate openings (54.sub.1) through the gate layer. An insulating layer (24) is etched through the gate openings to form dielectric open spaces (56.sub.1, 94.sub.1, 106.sub.1, or 114.sub.1) through the insulating layer down to a resistive layer (22B) of an underlying conductive region (22). Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) are formed in the dielectric open spaces over the resistive layer.
Abstract:
A method for fabricating sharp asperities. A substrate is provided which has a mask layer disposed thereon, and a layer of micro-spheres is disposed superjacent the mask layer. The micro-spheres are for patterning the mask layer. Portions of the mask layer are selectively removed, thereby forming circular masks. The substrate is isotropically etched, thereby creating sharp asperities.
Abstract:
Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.
Abstract:
A field emission type cold cathode device has a substrate whose upper surface is conductive, an insulating layer deposited on the conductive surface, a conductive gate layer, and a conical emitter electrode having a sharp apex formed in an opening in the insulating layer and the gate electrode. The insulating layer includes a first insulating film and a second insulating film. The insulating layer in the opening has an exposed surface arranged so that electrons emitted from near an end portion of the first insulating film are kept away from exposed surfaces of the insulating layer. In one form, the exposed surface of the first insulating film is disposed at a level lower than an unexposed surface of the first insulating film thus forming a recess. In another form, the second insulating film exposed in the opening is recessed relative to the first insulating film exposed in the opening.
Abstract:
Described are methods for making, and resultant structures of, a field emission display with soft luminescence and a comfortable image for a viewer of the display. The field emission display is formed with a baseplate and an opposing face plate. Field emission microtips are formed in openings in a conductive and insulating layer on the baseplate. An anode is formed on either the faceplate, or on the conductive layer surrounding each opening. Phosphorescent material is formed over the anode. A blocking layer is formed between the phosphor and the faceplate, such that during operation of the display direct light emission from the phosphor is blocked, resulting in indirect phosphorescence and a more comfortable display image. An optional reflective layer may be added over the conductive layer to increase phosphorescence.
Abstract:
A field emitter device for selective emission of an electron and/or ion beam comprising a substrate member having an array of field emitter elements thereon, in which the field emitter elements and/or substrate member have a varied conformation producing a beam of appropriate focused and/or directional character. Also disclosed is a display article for producing an output in response to impingement of electron beams thereon, comprising a substrate member on which is disposed an array of phosphor elements, with a diamond-like film coated on the phosphor elements to maintain the phosphor elements in position on the substrate member. Also disclosed is a field emission apparatus comprising such field emitter device and display article, such as a flat panel display.
Abstract:
A field emission display apparatus comprised of an emitter plate 2 having a plurality of column conductors 9 intersecting a plurality of row conductors 6, and electron emitters 5 at the intersection of each of the row and column conductors. An anode plate 62 is adjacent to the emitter plate 2, the anode plate 62 comprising conductive stripes 90 which are alternately covered by material luminescing in the three primary colors. The conductive stripes 90 covered by the same luminescent material are electrically interconnected to form comb-like structures corresponding to each of the colors. The anode plate 62 contains an active region 58. The conductive stripes 90 have a first width W.sub.7 within the active region 58 and a second different width W.sub.8 outside of the active region 58.
Abstract:
A method is provided for creating gated filament structures for a field emission display. A multi-layer structure is provided that includes a substrate, an insulating layer, a metal gate layer positioned on a top surface of the insulating layer and a gate encapsulation layer positioned on a top surface of the metal gate layer. A plurality of gates are provided and define a plurality of apertures on the top of the insulating layer. A plurality of spacers are formed in the apertures at their edges on the top surface of the insulating layer. The spacers are used as masks for etching the insulating layer and form a plurality of pores in the insulating layer. The pores are plated with a filament material to create a plurality of filaments. The pores can be overplated to create the plurality of filaments. The filaments are vertically self-aligned in the pores.
Abstract:
An electron emitter contains a gate layer (38), an underlying dielectric layer (36), an intermediate non-insulating layer (34) situated below the dielectric layer, and a lower non-insulating region (32) situated below the intermediate non-insulating layer. A multiplicity of electron-emissive particles (42) are situated over the non-insulating region at the bottom of an opening (40) extending through the three layers. The ratio of the thickness of the dielectric layer to the thickness of the intermediate non-insulating layer is in the range of 1:1 to 4:1, while the ratio of the mean diameter of the opening to the thickness of the intermediate non-insulating layer is in the range 1:1 to 10:1. The presence of the intermediate non-insulating layer improves the collimation of the beam of electrons emitted from the electron-emissive elements. The electron emitter is manufactured according to a simple, readily controllable process.
Abstract:
A flat panel display having a repair capability, a process for repairing such a display having defects involving short circuits between a field emission tip and an adjacent conductor, and a process for forming a flat panel display with repair capability, are described. The flat panel display has a dielectric base substrate, upon which are formed cathode columns of parallel, spaced conductors. Gate lines, also formed of parallel, spaced conductors, are located over and perpendicular to the cathode columns. A dielectric layer is formed between the cathode columns and the gate lines. Pixels of the display are located at the intersections of the cathode columns and the gate lines. A plurality of openings are formed in the gate lines and in the dielectric layer, at each of the pixels. A plurality of field emission microtips, at each of the pixels, connects to and extends up from the cathode columns and into the openings. Slots in the gate lines are formed contiguously between the openings and parallel to the direction of the gate lines, whereby the slots provide a repair capability. The flat panel display is tested to detect the defect, located at an emitter location. The gate line is cut, preferably with a laser beam, on both sides of the emitter location, so that the cuts and slots electrically isolate the defective emitter from the rest of the gate line.