Abstract:
An ion generator (10) generally includes: a shielding shell (11), a cathode device (16), and an annular anode (14). The shielding shell has a first end (113), an opposite second end (115) and a main body (111) therebetween. The first end has an electron-input hole (13). The second end has an ion-output hole (15). The main body has a gas inlet (170) for introducing an ionizable gas (170). The cathode device faces the electron-input hole for emitting electrons to enter the shielding shell so as to ionize the ionizable gas thereby generating ions. The cathode device includes a conductive base (160) and at least one field emitter (161) thereon. The annular anode is arranged in the shielding shell. The anode is aligned with the ion-output hole.
Abstract:
The metastable atom bombardment source provides a charged particle free beam of metastable species that can be used to bombard and ionize organic and inorganic substances in a gas phase. The metastable atoms are produced by inducing a discharge in a gas (rare gases or small molecules). The discharge is curved between the cathode and anode, with the cathode located in a medium pressure zone and the anode located off-axis in a low pressure zone. A nozzle located between the cathode and the anode provides a collimated beam of metastable atoms of low kinetic energy that is directed at an ion volume containing the substances to be analyzed. By selecting the energy of the metastable state, selective fragmentation of molecules, particularly large molecular weight molecules, can be carried out.
Abstract:
An ion generator chamber, for an implantation apparatus, having its interior walls surfaces knurled or roughened so that any of the materials used in the chamber cannot deposit onto the interior wall surfaces in a size sufficiently large enough to adversely affect the operation of the chamber, if the deposits peel off the interior walls of the chamber. By limiting the size of any deposits on interior chamber walls, the invention extends the average life of the filaments used in the chamber as well as extending the average time between any necessary cleaning of the inner chamber walls thereby extending the operating life of the chamber.
Abstract:
In accordance with the invention, the ion source of a time-of-flight mass spectrometer includes an electron gun having an electron source and at least one electrode for conditioning the flow of electrons, followed by at least one microchannel wafer for generating a pulsed secondary electron beam containing a greater number of electrons from a pulsed primary electron beam. The secondary electron beam enters a gas ionization area of an ion gun which produces a flow of ions which is then passed through the flight tube in order to be analyzed by an ion detector. This provides a high-performance ion source which is compact, sensitive and easy to integrate.
Abstract:
A method and system for in-process cleaning of an ion source (12) is provided. The ion source (12) comprises (i) a plasma chamber (22) formed by chamber walls (112, 114, 116) that bound an ionization zone (120); (ii) a source of ionizable dopant gas (66) and a first mechanism (68) for introducing said ionizable dopant gas into said plasma chamber; (iii) a source of cleaning gas (182) and a second mechanism (184) for introducing said cleaning gas into said plasma chamber; and (iv) an exciter (130) at least partially disposed within said chamber for imparting energy to said ionizable dopant gas and said cleaning gas to create a plasma within said plasma chamber. The plasma comprises disassociated and ionized constituents of said dopant gas and disassociated and ionized constituents of said cleaning gas. The disassociated and ionized constituents of said cleaning gas react with said disassociated and ionized constituents of said dopant gas to prevent formation of deposits of elements contained within said ionizable dopant gas on surfaces of said chamber walls. The cleaning gas may be, for example, nitrogen trifluoride (NF.sub.3), and the ionizable dopant gas may be, for example, either phosphine (PH.sub.3) or arsine (AsH.sub.3). Mass flow controllers control the ratio of cleaning gas to ionizable dopant gas introduced into said plasma chamber, which is greater than 0:1 and preferably at least 3:1.
Abstract:
The metastable atom bombardment source provides a charged particle free beam of metastable species that can be used to bombard and ionize organic and inorganic substances in a gas phase. The metastable atoms are produced by inducing a discharge in a gas (rare gases or small molecules). The discharge is curved between the cathode and anode, with the cathode located in a medium pressure zone and the anode located off-axis in a low pressure zone; A nozzle located between the cathode and the anode provides a collimated beam of metastable atoms of low kinetic energy that is directed at an ion volume containing the substances to be analyzed.
Abstract:
An electron beam source includes a cathode having an electron emission surface including an active area for emission of electrons and a cathode shield assembly including a conductive shield disposed in proximity to the electron emission surface of the cathode. The shield has an opening aligned with the active area. The electron beam source further includes a device for stimulating emission of electrons from the active area of the cathode, electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the cathode at high vacuum. The cathode may be a negative electron affinity photocathode formed on a light-transmissive substrate. The shield protects non-emitting areas of the emission surface from contamination and inhibits cathode materials from contaminating components of the electron beam source. The cathode may be moved relative to the opening in the shield so as to align an new active area with the opening. Getter materials and sources of activation material may be incorporated into the shield assembly.
Abstract:
The present invention comprises an ion source apparatus for producing an ion beam from a solid material of arsenic or phosphorus. The ion source includes a plasma chamber having an inlet orifice and an outlet orifice wherein a non-toxic carrier gas is inputted into the plasma chamber. A means for generating a gas plasma is arranged within the plasma chamber and an electrically insulated platform is also arranged within the plasma chamber. A heatable wafer of solid source material of a metal phosphide or arsenide is attached to the platform, for conversion upon heating, into an ion beam.
Abstract:
A simple method for producing a high intensity metal ion beam from a high-powered Penning-type ion source in a cyclotron is provided. A small amount of an inert support gas maintains the usual plasma arc, except it is necessary for the support gas to have a heavy mass, e.g., xenon or krypton as opposed to neon. A plate, fabricated from the metal (or anything that can be sputtered) to be ionized, is mounted on the back wall of the ion source arc chamber and is bombarded by returning energetic lowcharged gas ions that failed to successfully cross the initial rf accelerating gap between the ion source and rf accelerating slit. Some of the atoms that are dislodged from the plate by the returning gas ions become ionized in the plasma arc column and are extracted as a useful beam of heavy ions.