公开(公告)号：US08124212B2

公开(公告)日：2012-02-28

申请号：US12971327

申请日：2010-12-17

Applicant: Yoshitaka Hayashi ,  Noboru Sasa ,  Toshishige Fujii ,  Masayuki Fujiwara ,  Hiroshi Miura ,  Masaki Kato ,  Takeshi Kibe ,  Shinya Narumi

Inventor： Yoshitaka Hayashi ,  Noboru Sasa ,  Toshishige Fujii ,  Masayuki Fujiwara ,  Hiroshi Miura ,  Masaki Kato ,  Takeshi Kibe ,  Shinya Narumi

IPC: B32B3/02

CPC classification number: C23C14/08 ,  C23C14/0036 ,  C23C14/3414 ,  G11B7/243 ,  G11B7/2585 ,  G11B7/266 ,  G11B2007/2431 ,  G11B2007/24314 ,  G11B2007/2432 ,  H01J37/34 ,  H01J37/3414 ,  H01J37/3429 ,  Y10T428/21

Abstract: To provide a sputtering target for preparing a recordable optical recording medium characterized by comprising Bi and B and a manufacturing method thereof, a recordable high density optical recording medium using the sputtering target, and a sputtering target which is capable of improving a speed of the film formation for the improvement of productivity, which has a high intensity at the time of the film formation and which has a heightened packing density.

Abstract translation: 为了提供一种用于制备可记录光学记录介质的溅射靶，其特征在于包括Bi和B及其制造方法，使用溅射靶的可记录的高密度光学记录介质和能够提高膜的速度的溅射靶 用于提高生产率的形成，其在成膜时具有高强度并且具有提高的堆积密度。

公开(公告)号：US20100270143A1

公开(公告)日：2010-10-28

申请号：US12808045

申请日：2009-01-15

Applicant: Yukio Kikuchi ,  Guo Hua Shen

Inventor： Yukio Kikuchi ,  Guo Hua Shen

IPC: C23C14/35

CPC classification number: H01F41/303 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/351 ,  C23C14/352 ,  G01R33/09 ,  G01R33/098 ,  H01F7/0273 ,  H01F10/3254 ,  H01F10/3295 ,  H01J37/3266 ,  H01J37/34 ,  H01J37/3414 ,  H01L43/12

Abstract: A substrate stage that is arranged in a vacuum chamber and that has a substrate mounting surface on which a substrate is mounted, including a first magnetic field applying unit that applies a magnetic field to the substrate, in which the internal magnetization direction of the first magnetic field applying unit and the thickness direction of the substrate match.

Abstract translation: 布置在真空室中并且具有其上安装有基板的基板安装表面的基板台，包括向基板施加磁场的第一磁场施加单元，其中第一磁体的内部磁化方向 场施加单元和衬底的厚度方向匹配。

公开(公告)号：US20090008245A1

公开(公告)日：2009-01-08

申请号：US12023588

申请日：2008-01-31

Applicant: Yasuhiro Yamakoshi ,  Kenichi Mogaki

Inventor： Yasuhiro Yamakoshi ,  Kenichi Mogaki

IPC: C23C14/00

CPC classification number: H01J37/3435 ,  C23C14/3407 ,  H01J37/3255 ,  H01J37/32559 ,  H01J37/3414 ,  H01J37/3426 ,  Y10T428/12465

Abstract: A method for connecting a magnetic substance target to a backing plate with less variation in plate thickness, characterized in having the steps of connecting the magnetic substance target to an aluminum plate beforehand while maintaining the flatness, connecting the magnetic substance target connected to the aluminum plate to the backing plate while maintaining the flatness, and grinding out the aluminum plate, whereby the flatness of the magnetic substance target can be maintained until the magnetic substance target is connected to the backing plate by a relatively simple operation.

Abstract translation: 一种用于将磁性物体靶材连接到板厚变化较小的背板的方法，其特征在于具有以下步骤：在保持平坦度的同时将磁性物体目标物连接到铝板上，连接与铝板连接的磁性物体靶 同时保持平坦度，并且研磨铝板，从而可以通过相对简单的操作来保持磁性物体靶的平坦度，直到磁性物体靶与背板连接。

公开(公告)号：US20060237303A1

公开(公告)日：2006-10-26

申请号：US11392769

申请日：2006-03-30

Applicant: Morio Hosoya ,  Osamu Nozawa

Inventor： Morio Hosoya ,  Osamu Nozawa

IPC: C23C14/32 ,  C23C14/00

CPC classification number: G03F7/70958 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/14 ,  C23C14/3414 ,  G02B5/0891 ,  G03F1/24 ,  G03F7/70983 ,  G21K2201/067 ,  H01J37/3414 ,  H01J37/3426

Abstract: A sputtering target is substantially made of ruthenium (Ru), has a sintered density of 95% or more, and contains oxygen (O) and carbon (C) each in an amount of 200 ppm or less.

Abstract translation: 溅射靶基本上由钌（Ru）制成，烧结密度为95％以上，并且含有氧（O）和碳（C）各自为200ppm以下。

公开(公告)号：US20060197457A1

公开(公告)日：2006-09-07

申请号：US11381866

申请日：2006-05-05

Applicant: Mirko Vukovic ,  Derrek Russell

Inventor： Mirko Vukovic ,  Derrek Russell

IPC: H01J7/24 ,  H05B31/26

CPC classification number: H01J37/3405 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/3266 ,  H01J37/32724 ,  H01J37/3414 ,  H01J37/3461 ,  H01J37/3497 ,  H01J2237/332

Abstract: A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and maybe a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface magnet generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets, have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate or back magnet interconnects the back poles of the side magnets. A ferromagnetic shield behind the magnet pack confines the field away from the iPVD material source.

Abstract translation: 用于iPVD的电容等离子体源被浸没在强的局部磁场中，并且可以是用于iPVD的电感耦合等离子体（ICP）源的替代。 源极包括环形电极，其后面具有磁体组件，其包括大致平行于电极表面的表面磁体，其中磁场沿电极表面径向延伸。 诸如内外环形磁铁的侧磁体具有与电极相交的极轴，极点与最靠近与表面磁体的相邻磁极相同极性的电极。 铁磁背板或后磁铁将侧磁体的后极互连。 磁铁组件后面的铁磁屏蔽将场离开iPVD材料源。

公开(公告)号：US06955748B2

公开(公告)日：2005-10-18

申请号：US10614806

申请日：2003-07-09

Applicant: Jaeyeon Kim

Inventor： Jaeyeon Kim

IPC: C23C14/34

CPC classification number: C23C14/3407 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3491

Abstract: The invention includes PVD targets having non-sputtered regions (such as, for example, sidewalls), and particle-trapping features formed along the non-sputtered regions. In particular aspects, the particle-trapping features can comprise a pattern of bent projections forming receptacles, and can comprise microstructures on the bent projections. The targets can be part of target/backing plate constructions, or can be monolithic. The invention also includes methods of forming particle-trapping features along sidewalls of a sputtering target or along sidewalls of a target/backing plate construction. The features can be formed by initially forming a pattern of projections along a sidewall. The projections can be bent and subsequently exposed to particles to form microstructures on the bent projections.

Abstract translation: 本发明包括具有非溅射区域（例如，侧壁）的PVD靶和沿着非溅射区形成的颗粒捕获特征。 在特定方面，颗粒捕获特征可以包括形成容器的弯曲突起的图案，并且可以包括弯曲突起上的微结构。 目标可以是目标/背板结构的一部分，或者可以是整体的。 本发明还包括沿溅射靶的侧壁或靶/背板结构的侧壁形成颗粒捕获特征的方法。 特征可以通过初始形成沿着侧壁的突起图案来形成。 突起可以弯曲并随后暴露于颗粒以在弯曲突起上形成微结构。

公开(公告)号：US06800177B2

公开(公告)日：2004-10-05

申请号：US10369534

申请日：2003-02-21

Applicant: Kyung-Ho Shin ,  Steven Kim

Inventor： Kyung-Ho Shin ,  Steven Kim

IPC: C23C1434

CPC classification number: H01J37/3414 ,  C23C14/0605 ,  C23C14/34 ,  H01J37/34

Abstract: An apparatus and method for fabricating a carbon thin film are disclosed in the present invention. The apparatus includes a vacuum chamber having a substrate mounted therein, a sputter target inside the vacuum chamber facing into the substrate, a cesium supplying unit inside the vacuum chamber in a shape of a shield to a circumference of the target and supplying cesium vapor onto a surface of the sputter target through a plurality of openings, and a heating wire surrounding the cesium supplying unit and maintaining the cesium supplying unit at a constant pressure.

Abstract translation: 在本发明中公开了一种用于制造碳薄膜的装置和方法。 该装置包括：真空室，其中安装有基板，位于真空室内的溅射靶，面向基板的真空室;位于真空室内的铯供应单元，其形状为屏蔽物至目标周围，并将铯蒸气供应到 通过多个开口的溅射靶的表面，以及围绕铯供应单元并将铯供应单元保持在恒定压力的加热丝。

公开(公告)号：US20020066669A1

公开(公告)日：2002-06-06

申请号：US09998235

申请日：2001-12-03

Applicant: FTS Corporation

Inventor： Sadao Kadokura

IPC: C23C014/00 ,  C23C014/34

CPC classification number: H01J37/3414 ,  C23C14/352 ,  H01J37/3405

Abstract: Disclosed is a facing-targets-type sputtering apparatus and method capable of forming a metal film under the conditions of low gas pressure and low discharge voltage. An opening is formed in each of two facing side faces of a vacuum chamber vessel or in each of two facing side faces of a box-type discharge unit attached to an opening portion of a vacuum chamber vessel. The two openings are covered by a pair of cooling blocks. Each cooling block holds a target facing a discharge space. Magnetic field generation means is disposed so as to surround each target and operative to generate a magnetic field that surrounds a discharge space provided between the paired targets. Electron reflection means is disposed above the exposed surface of each target along the periphery of the target. A DC power and a high-frequency power are applied between the vacuum chamber vessel and the targets.

Abstract translation: 公开了一种能够在低气压和低放电电压的条件下形成金属膜的面向目标的溅射装置和方法。 在真空室容器的两个相对的侧面中的每一个中形成开口，或者在附接到真空室容器的开口部的盒式排出单元的两个相对的侧面中的每一个中形成开口。 两个开口被一对冷却块覆盖。 每个冷却块保持面向放电空间的目标。 磁场产生装置设置成围绕每个目标并且可操作地产生围绕设置在成对靶之间的放电空间的磁场。 电子反射装置沿着靶的周边设置在每个靶的暴露表面上方。 在真空室容器和靶之间施加直流电力和高频电力。

公开(公告)号：US06395156B1

公开(公告)日：2002-05-28

申请号：US09681962

申请日：2001-06-29

Applicant: Paul Hsueh ,  Abraham C. Ma

Inventor： Paul Hsueh ,  Abraham C. Ma

IPC: C23C1446

CPC classification number: H01J37/3414 ,  C23C14/46 ,  H01J37/34

Abstract: A sputtering chamber has a target that moves with an orbital motion relative to an ion beam. An X-Y assembly allows for target movement in both the horizontal and vertical directions. The X-Y assembly has a base plate, an intermediate plate, and a target mounting plate that attaches to the target. The plates are connected together by bearing blocks that slide along rails in the X and Y directions. A rotating shaft has gears that rotate a center shaft through the base and intermediate plates. The rotating center shaft has an arm on its end that attaches to the target mounting plate. The arm produces an orbital movement of the target. Rather than simply rotating the target around the center shaft, the center of the target orbits around the center of the center shaft. Ion-beam wear is spread across the target surface, extending target life and improving deposition uniformity.

Abstract translation: 溅射室具有相对于离子束以轨道运动移动的靶。 X-Y组件允许水平和垂直方向上的目标移动。 X-Y组件具有附接到目标的基板，中间板和目标安装板。 板通过在X和Y方向上沿轨道滑动的轴承座连接在一起。 旋转轴具有使中心轴穿过底座和中间板的齿轮。 旋转中心轴在其端部具有附接到目标安装板的臂。 手臂产生目标的轨道运动。 而不是简单地围绕中心轴旋转目标，目标的中心围绕中心轴的中心轨道。 离子束磨损扩散到目标表面，延长靶的寿命并提高沉积均匀性。

公开(公告)号：US5558751A

公开(公告)日：1996-09-24

申请号：US385521

申请日：1995-02-08

Applicant: Peter Mahler ,  Wolfgang Stang ,  Michael Scherer ,  Roland Gesche

Inventor： Peter Mahler ,  Wolfgang Stang ,  Michael Scherer ,  Roland Gesche

IPC: C23C14/34 ,  C23C14/40 ,  H01J37/34 ,  C23C14/54

CPC classification number: H01J37/3414 ,  H01J37/34

Abstract: In a coating apparatus, a sputter cathode (1) has, directly side by side, two electrodes (2, 3) connected in common to a high-frequency generator and having each a target (9, 10). The targets (9, 10) of both electrodes (2, 3) abut one another each with a straight edge (11, 12). A dark space shield surrounds both electrodes (2, 3) and targets (9, 10) together.

Abstract translation: 在涂覆装置中，溅射阴极（1）直接并排地连接有共同连接到高频发生器并具有每个靶（9,10）的两个电极（2,3）。 两个电极（2,3）的靶（9,10）彼此邻接，每个具有直边缘（11,12）。 暗空间屏蔽物将两个电极（2,3）和靶（9,10）一起包围。