-
公开(公告)号：US10234774B2
公开(公告)日：2019-03-19
申请号：US15949057
申请日：2018-04-09
发明人： Hans Butler
摘要： A lithographic apparatus includes a patterning device support to support a patterning device, the patterning device system including a moveable structure movably arranged relative to an object, a patterning device holder movably arranged relative to the movable structure to hold the patterning device, an actuator to move the movable structure relative to the object, and an ultra short stroke actuator to move the patterning device holder with respect to the movable structure; a substrate support to hold a substrate; a projection system to project a patterned radiation beam onto a target portion of the substrate; a transmission image sensor for measuring a position of the patterned radiation beam downstream of the projection system; and a calibrator for determining a relationship between magnitude of an applied control signal to the ultra short stroke actuator and resulting change in position of the patterned radiation beam and/or patterning device holder and/or patterning device.
-
公开(公告)号：US10222703B2
公开(公告)日：2019-03-05
申请号：US15653380
申请日：2017-07-18
发明人： Heine Melle Mulder , Johannes Jacobus Matheus Baselmans , Adrianus Franciscus Petrus Engelen , Markus Franciscus Antonius Eurlings , Hendrikus Robertus Marie Van Greevenbroek , Paul Van Der Veen , Patricius Aloysius Jacobus Tinnemans , Wilfred Edward Endendijk
摘要： A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam having the desired illumination mode with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.
-
公开(公告)号：US10216095B2
公开(公告)日：2019-02-26
申请号：US14911452
申请日：2014-07-22
发明人： Michel Riepen , Christianus Wilhelmus Johannes Berendsen , Anton Alexander Darhuber , Hubertus Mattheus Joseph Maria Wedershoven , Josephus Catharina Henricus Zeegers
摘要： An immersion lithographic apparatus is configured to subject a photosensitive layer on a substrate to a patterned beam of radiation via a liquid. The immersion lithographic apparatus includes a moveable object having a surface, a fluid handling system to control a presence of the liquid in a volume restricted by the surface, the fluid handling system, and a free surface of the liquid, the free surface extending between the surface and the fluid handling system; and a heating system configured to locally heat a portion of the liquid at a receding side of a periphery edge of the volume in contact with the surface, where the object is receding from the volume along a direction of movement of the object relative to the fluid handling system.
-
公开(公告)号：US10197909B2
公开(公告)日：2019-02-05
申请号：US15286260
申请日：2016-10-05
申请人： ASELTA NANOGRAPHICS
IPC分类号： G03B27/42 , G03F1/78 , G03F7/20 , H01J37/302 , H01J37/317
摘要： A method for transferring a fractured pattern decomposed into elementary shapes, onto a substrate by direct writing by a particle or photon beam, comprises a step of identifying at least one elementary shape of the fractured pattern, called removable elementary shape, whose removal induces modifications of the transferred pattern within a preset tolerance envelope; a step of removing the removable shape or shapes from the fractured pattern to obtain a modified fractured pattern; and an exposure step, comprising exposing the substrate to a plurality of shots of a shaped particle or photon beam, each shot corresponding to an elementary shape of the modified fractured pattern. A computer program product for carrying out such a method is provided.
-
公开(公告)号：US10175572B2
公开(公告)日：2019-01-08
申请号：US15588925
申请日：2017-05-08
申请人： SK hynix Inc.
发明人： Woo Yung Jung
摘要： A method of forming patterns is provided. The method includes forming a resist layer on a substrate, forming a lattice-shaped extrusion barrier region in the resist layer to define pattern transfer regions corresponding to a plurality of separate windows, and positioning a template on the resist layer so that a patterned surface of the template faces the resist layer. The patterned surface provides a plurality of transfer patterns. The template is pressed to perform an imprint step for embedding the transfer patterns of the template into the pattern transfer regions of the resist layer.
-
公开(公告)号：US10168625B2
公开(公告)日：2019-01-01
申请号：US15639272
申请日：2017-06-30
发明人： Burn Jeng Lin , Ching-Yu Chang
摘要： Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank.
-
27.发明授权公开(公告)号：US10162257B2
公开(公告)日：2018-12-25
申请号：US15380717
申请日：2016-12-15
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
摘要： A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.
-
公开(公告)号：US10133197B2
公开(公告)日：2018-11-20
申请号：US15325987
申请日：2015-06-08
发明人： Günes Nakiboglu , Frank Johannes Jacobus Van Boxtel , Thomas Petrus Hendricus Warmerdam , Jan Steven Christiaan Westerlaken , Johannes Pieter Kroes
摘要： A lithographic apparatus including: a projection system with an optical axis; an enclosure with an ambient gas; and a physical component accommodated in the enclosure, wherein: the lithographic apparatus is configured to cause the physical component to undergo movement relative to the enclosure, in a predetermined direction and in a plane perpendicular to the optical axis; the lithographic apparatus is configured to let the physical component maintain a predetermined orientation with respect to the enclosure during the movement; the movement induces a flow of the ambient gas relative to the component; the physical component has a surface oriented perpendicularly to the optical axis; the component includes a flow direction system configured to direct the flow of ambient gas away from the surface.
-
公开(公告)号：US10133191B2
公开(公告)日：2018-11-20
申请号：US15325716
申请日：2015-07-15
摘要： A method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method includes obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following pattern transfer to the substrate using a lithographic process, and obtaining a corresponding set of actual processing parameter values that includes an actual value of a processing parameter of the lithographic process during the pattern transfer at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.
-
公开(公告)号：US10095126B2
公开(公告)日：2018-10-09
申请号：US15659205
申请日：2017-07-25
申请人： Carl Zeiss SMT GmbH
发明人： Jens Prochnau , Marwene Nefzi , Dirk Schaffer
摘要： The present application discloses a component having a movably mounted component element of a projection exposure apparatus and in particular a movement limiting apparatus, and a method for limiting the movement of movable component elements of a component of a projection exposure apparatus.
-
-
-
-
-
-
-
-
-
搜索结果
5151 条记录 (耗时 0.028 秒)
