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    MEMORY DEVICE, METHOD OF FORMING THE SAME, AND MEMORY ARRAY
    21.
    发明申请
    MEMORY DEVICE, METHOD OF FORMING THE SAME, AND MEMORY ARRAY 有权

    公开(公告)号：US20220285435A1

    公开(公告)日：2022-09-08

    申请号：US17362979

    申请日：2021-06-29

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chien-Min Lee ,  Ming-Yuan Song ,  Yen-Lin Huang ,  Shy-Jay Lin ,  Tung-Ying Lee ,  Xinyu BAO

    IPC分类号： H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/14 ,  G11C11/16 ,  G11C11/18

    摘要： Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

    Magnetoelectric spin orbit logic based full adder
    23.
    发明授权
    Magnetoelectric spin orbit logic based full adder 有权

    公开(公告)号：US11411172B2

    公开(公告)日：2022-08-09

    申请号：US16130912

    申请日：2018-09-13

    申请人： Intel Corporation

    发明人： Huichu Liu ,  Sasikanth Manipatruni ,  Daniel Morris ,  Kaushik Vaidyanathan ,  Tanay Karnik ,  Ian Young

    IPC分类号： G11C11/00 ,  H01L43/04 ,  H01L43/06 ,  G11C11/16 ,  G11C11/18 ,  H01L43/10

    摘要： An apparatus is provided which comprises a full adder including magnetoelectric material and spin orbit material. In some embodiments, the adder includes: a 3-bit carry generation structure and a multi-bit sum generation structure coupled to the 3-bit carry generation structure. In some embodiments, the 3-bit carry generation structure includes at least three cells comprising magnetoelectric material and spin orbit material, wherein the 3-bit carry generation structure is to perform a minority logic operation on first, second, and third inputs to generate a carry output. In some embodiments, the multi-bit sum generation structure includes at least four cells comprising magnetoelectric material and spin orbit material, wherein the multi-bit sum generation structure is to perform a minority logic operation on the first, second, and third inputs and the carry output to generate a sum output.

    VALLEY SPIN HALL EFFECT BASED NON-VOLATILE MEMORY
    24.
    发明申请
    VALLEY SPIN HALL EFFECT BASED NON-VOLATILE MEMORY 有权

    公开(公告)号：US20220157359A1

    公开(公告)日：2022-05-19

    申请号：US17588317

    申请日：2022-01-30

    申请人： Purdue Research Foundation

    发明人： Sandeep Krishna Thirumala ,  Sumeet Kumar Gupta ,  Yi-Tse Hung ,  Zhihong Chen

    IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/04 ,  G11C11/18 ,  H01L43/06

    摘要： A memory cell is disclosed which includes a semiconductor layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another along a first axis and wherein the semiconductor layer extends beyond the first axis along a second axis substantially perpendicular to the first axis, thereby forming a first wing, a third electrode separated from the semiconductor layer by an insulating layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.

    Magnetic device including spin sinker
    26.
    发明授权
    Magnetic device including spin sinker 有权

    公开(公告)号：US11322190B2

    公开(公告)日：2022-05-03

    申请号：US17127414

    申请日：2020-12-18

    申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    发明人： Kyoung Whan Kim ,  Dong Soo Han

    IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  G11C11/18

    摘要： Disclosed is a magnetic device including a spin sinker. The magnetic device includes a storage medium, a spin sinker, and a read node. The storage medium receives an in-plane current from outside and generates a self-generated spin current that perpendicularly flows to a charge current, thereby controlling a data structure with the self-generated spin current. The spin sinker receives and attenuates the spin current. The read node measures a magnetoresistance of a data structure through the storage medium. The storage medium is made of a magnetic metal and the spin sinker is made of a magnetic insulating material.

    Magnetoresistance effect element and magnetic memory
    30.
    发明授权
    Magnetoresistance effect element and magnetic memory 有权

    公开(公告)号：US11264071B2

    公开(公告)日：2022-03-01

    申请号：US16912832

    申请日：2020-06-26

    申请人： TDK CORPORATION

    发明人： Yohei Shiokawa

    IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  G01R33/09 ,  H01L43/04 ,  H01L27/22 ,  H01L43/10

    摘要： A magnetoresistance effect element where asymmetry of an inversion current due to a leakage magnetic field from a magnetization fixed layer is decreased. A magnetoresistance effect element includes a first ferromagnetic layer whose magnetization direction is variable, a second ferromagnetic layer whose magnetization direction is fixed, and a nonmagnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer which are laminated in a first direction which is a lamination direction, where both the first ferromagnetic layer and the second ferromagnetic layer are curved so that central portions of the first and second ferromagnetic layers protrude with respect to outer circumferential portions in the first direction, and protruding directions of the central portions are opposite to each other so that a distance between the outer circumferential portions is larger than a distance between the central portions in the first direction.