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199 条记录 (耗时 0.04 秒)

    Synthesis of fibers of inorganic materials using low-melting metals
    22.
    发明授权
    Synthesis of fibers of inorganic materials using low-melting metals 有权
    使用低熔点金属合成无机材料的纤维

    公开(公告)号：US07713352B2

    公开(公告)日：2010-05-11

    申请号：US11521084

    申请日：2006-09-14

    申请人： Mahendra Kumar Sunkara ,  Shashank Sharma ,  Hari Chandrasekaran ,  Hongwei Li ,  Sreeram Vaddiraju

    发明人： Mahendra Kumar Sunkara ,  Shashank Sharma ,  Hari Chandrasekaran ,  Hongwei Li ,  Sreeram Vaddiraju

    IPC分类号： C30B17/00 ,  C30B23/00

    CPC分类号： C30B25/18 ,  C30B23/007 ,  C30B23/025 ,  C30B25/005 ,  Y10S977/72 ,  Y10S977/762 ,  Y10S977/809 ,  Y10S977/81 ,  Y10S977/825

    摘要： A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum are used to dissolve and to produce nanowires. The dissolution of solutes can be achieved by using a solid source of solute and low-melting metal, or using a vapor phase source of solute and low-melting metal. The resulting nanowires range in size from 1 nanometer up to 1 micron in diameter and lengths ranging from 1 nanometer to several hundred nanometers or microns. This process does not require the use of metals such as gold and iron in the form of clusters whose size determines the resulting nanowire size. In addition, the process allows for a lower growth temperature, better control over size and size distribution, and better control over the composition and purity of the nanowire produced therefrom.

    摘要翻译： 提供了一种在各种半导体材料中产生大量纳米线的方法。 使用低熔点金属如镓，铟，铋和铝的薄膜和液滴来溶解和产生纳米线。 溶质的溶解可以通过使用溶质和低熔点金属的固体源，或使用溶质和低熔点金属的气相源来实现。 所得的纳米线的尺寸范围从1纳米直到1微米的直径和长度范围从1纳米到几百纳米或微米。 该方法不需要以尺寸决定所得纳米线尺寸的簇的形式使用诸如金和铁的金属。 此外，该方法允许较低的生长温度，更好地控制尺寸和尺寸分布，以及更好地控制由其制备的纳米线的组成和纯度。

    Gem Growth Cubic Press and Associated Methods
    23.
    发明申请
    Gem Growth Cubic Press and Associated Methods 审中-公开
    宝石生长立方压力及相关方法

    公开(公告)号：US20100068122A1

    公开(公告)日：2010-03-18

    申请号：US12541064

    申请日：2009-08-13

    申请人： Chien-Min Sung

    发明人： Chien-Min Sung

    IPC分类号： C01B31/06 ,  C30B17/00 ,  B01J3/06

    CPC分类号： B01J3/065 ,  B01J2203/0655 ,  B30B11/004 ,  Y10T117/1092

    摘要： A multiple anvil press can be configured for gem-quality growth. The press can include a plurality of opposing anvils, where the anvils are configured for simultaneous movement within a tolerance of less than about 0.5 mm as measured at each anvil surface, and each anvil can be aligned to a common center of all the anvils where the alignment is tuned to a tolerance of less than about 0.1 mm during use. The press can also include a reaction volume formed by the enclosure of all anvils, where the reaction volume has a size configured to facilitate single crystal growth per cycle time.

    摘要翻译： 多砧印刷机可以配置为宝石质量增长。 压力机可以包括多个相对的砧座，其中砧构造成在每个砧座表面处测量的小于约0.5mm的公差内同时移动，并且每个砧座可以与所有砧座的公共中心对准，其中 在使用期间，对准调整到小于约0.1mm的公差。 压机还可以包括由所有砧座的外壳形成的反应体积，其中反应体积具有被配置为有助于每循环时间单晶生长的尺寸。

    Method of laser writing refractive index patterns in silicon photonic crystals
    27.
    发明申请
    Method of laser writing refractive index patterns in silicon photonic crystals 审中-公开
    激光写入硅光子晶体折射率图案的方法

    公开(公告)号：US20070079750A1

    公开(公告)日：2007-04-12

    申请号：US10555672

    申请日：2004-05-10

    申请人： Herman Miguez ,  Geoffrey Ozin ,  Nicolas Tetreault

    发明人： Herman Miguez ,  Geoffrey Ozin ,  Nicolas Tetreault

    IPC分类号： C30B7/00 ,  C30B21/02 ,  C30B28/06 ,  C30B9/00 ,  C30B11/00 ,  C30B17/00

    CPC分类号： B82Y20/00 ,  C30B7/00 ,  C30B7/005 ,  C30B29/06 ,  C30B29/60 ,  G02B6/1225 ,  G02B6/13

    摘要： The present invention discloses a method whereby laser microwriting is used to microanneal an amorphous silicon phase to a nanocrystalline silicon phase in silicon photonic crystals, films, fibers or surface patterns to enable the precise definition of a pre-determined refractive index contrast pattern in spatially designated regions of amorphous silicon photonic crystals, films, fibers or surface patterns in a rapid and straightforward fashion. At the micrometer length scale of the silicon photonic lattice the method can be used to create extrinsic defects in silicon photonic crystals, films, fibers or surface patterns, exemplified but not limited to points, lines and bends for localizing, guiding and bending light. It is also apparent that refractive index patterns can be laser written at larger length scales to create heterostructures in amorphous phase silicon photonic crystals, films, fibers or surface patterns, exemplified but not limited to junction, gradient, superlattice and modulated structures with designed photonic crystal properties and optical functionality. The laser microwriting-microanneling methodology described in this invention for creating spatially defined refractive index patterns in silicon photonic crystals may enable the future development of a range of silicon-based photonic crystal devices for all-optical chips, computers and telecommunication systems.

    摘要翻译： 本发明公开了一种方法，其中使用激光微写将硅非晶硅相微胶体化到硅光子晶体，薄膜，纤维或表面图案中的纳米晶硅相，以使得能够精确地定义空间上指定的折射率对比度图案 非晶硅光子晶体，膜，纤维或表面图案的区域以快速和直接的方式。 在硅光子晶格的微米长度尺度上，该方法可以用于在硅光子晶体，膜，纤维或表面图案中产生外在缺陷，例示但不限于用于定位，引导和弯曲光的点，线和弯曲。 还可以看出，折射率图案可以以更大的长度刻度激光写入，以在非晶相硅光子晶体，膜，纤维或表面图案中产生异质结，示例但不限于具有设计的光子晶体的结，梯度，超晶格和调制结构 属性和光学功能。 在本发明中描述的用于在硅光子晶体中创建空间定义的折射率图案的激光微写 - 微连接方法可以使得将来可以开发用于全光学芯片，计算机和电信系统的一系列硅基光子晶体器件。

    Method of repairing a short defect and a method of fabricating a liquid crystal display device
    29.
    发明申请
    Method of repairing a short defect and a method of fabricating a liquid crystal display device 有权
    修补短缺陷的方法和制造液晶显示装置的方法

    公开(公告)号：US20070000431A1

    公开(公告)日：2007-01-04

    申请号：US11445193

    申请日：2006-06-02

    申请人： Soon Yoo ,  Heung Cho

    发明人： Soon Yoo ,  Heung Cho

    IPC分类号： C30B11/00 ,  C30B9/00 ,  C30B17/00 ,  C30B21/02 ,  C30B28/06

    CPC分类号： G02F1/136259

    摘要： A method for repairing a short defect according to the present invention includes forming a first conductive pattern on a substrate, forming a photo-resist pattern on the first conductive pattern using a rear exposure for the first conductive pattern being shorted by a residue pattern, and removing the residue pattern exposed through the photo-resist pattern.

    摘要翻译： 根据本发明的用于修复短缺陷的方法包括在衬底上形成第一导电图案，在第一导电图案上使用后曝光形成第一导电图案的残留图案短路的光刻胶图案，以及 去除通过光刻胶图案曝光的残留图案。

    High pressure crystal growth apparatuses and associated methods
    30.
    发明申请
    High pressure crystal growth apparatuses and associated methods 失效
    高压晶体生长装置及相关方法

    公开(公告)号：US20060032431A1

    公开(公告)日：2006-02-16

    申请号：US11211139

    申请日：2005-08-24

    申请人： Chien-Min Sung

    发明人： Chien-Min Sung

    IPC分类号： C01B31/06 ,  C30B7/00 ,  C30B9/00 ,  B01J3/06 ,  C30B21/02 ,  C30B11/00 ,  C30B28/06 ,  C30B17/00 ,  B01J3/08

    CPC分类号： B30B11/004 ,  B01J3/067 ,  B30B11/007 ,  C30B7/00

    摘要： High pressure synthesis of various crystals such as diamond, cBN and the like can be carried out using reaction assemblies suitable for use in methods such as temperature gradient methods. The reaction assembly can be oriented substantially perpendicular to gravity during application of high pressure. Orienting the reaction assembly in this manner can avoid detrimental effects of gravity on the molten catalyst, e.g., convection, hence increasing available volumes for growing high quality crystals. Multiple reaction assemblies can be oriented in series or parallel, each reaction assembly having one or more growth cells suitable for growth of high quality crystals. Additionally, various high pressure apparatuses can be used. A split die design allows for particularly effective results and control of temperature and growth conditions for individual crystals.

    摘要翻译： 各种晶体如金刚石，cBN等的高压合成可以使用适用于诸如温度梯度法的方法的反应组件进行。 反应组件可以在施加高压时基本垂直于重力定向。 以这种方式定向反应组件可以避免重力对熔融催化剂的有害影响，例如对流，从而增加用于生长高品质晶体的可用体积。 多个反应组件可以串联或并联取向，每个反应组件具有一个或多个适于生长高质量晶体的生长细胞。 另外，可以使用各种高压装置。 分裂模具设计允许特别有效的结果和控制单个晶体的温度和生长条件。