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76 条记录 (耗时 0.013 秒)

    Iron oxide magnetic film and process for fabrication thereof
    22.
    发明授权
    Iron oxide magnetic film and process for fabrication thereof 失效
    氧化铁磁性膜及其制造方法

    公开(公告)号：US4544612A

    公开(公告)日：1985-10-01

    申请号：US532978

    申请日：1983-09-16

    申请人： Osamu Ishii ,  Fumikatsu Yoshimura ,  Iwao Hatakeyama

    发明人： Osamu Ishii ,  Fumikatsu Yoshimura ,  Iwao Hatakeyama

    IPC分类号： H01F10/18 ,  B32B15/18

    CPC分类号： H01F10/18 ,  Y10S428/90

    摘要： .gamma.-Fe.sub.2 O.sub.3 film with at least one additive selected from the group consisting of Pd, Au, Pt, Rh, Ag, Ru, Ir, and Os, especially Os are disclosed. Reduction from .alpha.-Fe.sub.2 O.sub.3 to Fe.sub.3 O.sub.4 is accelerated by additive Os to achieve a uniform reduction and increase the ratio of magnetic phase in the film. .gamma.-Fe.sub.2 O.sub.3 film medium with Os improved saturation magnetization and increased coercive force in proportion to amount of additive Os. Application of an external field to said film introduces magnetic anisotropy into said film, therefore said film medium improves coercive force and squareness of hysteresis loop by the introduction of anisotropy. .gamma.-Fe.sub.2 O.sub.3 crystal grain is prepared by additive Os to obtain fine grain. The resultant .gamma.-Fe.sub.2 O.sub.3 film medium a decreased noise level.

    摘要翻译： 公开了具有至少一种选自Pd，Au，Pt，Rh，Ag，Ru，Ir和Os的添加剂的γ-Fe 2 O 3膜。 由α-Fe 2 O 3还原成Fe 3 O 4由添加剂Os加速以实现均匀的还原并增加膜中磁相的比例。 具有Os的γ-Fe2O3膜介质改善了饱和磁化强度，并且与添加剂的量成比例地增加矫顽力。 对所述膜施加外部场，将磁各向异性引入所述膜，因此所述膜介质通过引入各向异性而提高矫顽力和磁滞回线的矩形度。 通过添加剂Os制备γ-Fe 2 O 3晶粒以获得细晶粒。 所得的γ-Fe 2 O 3膜介质降低了噪声水平。

    Method of, and apparatus for, establishing self-biased single wall domains
    25.
    发明授权
    Method of, and apparatus for, establishing self-biased single wall domains 失效
    建立自偏置单壁域的方法和设备

    公开(公告)号：US3968481A

    公开(公告)日：1976-07-06

    申请号：US491918

    申请日：1974-07-25

    申请人： Philip J. Grundy ,  Yeong S. Lin

    发明人： Philip J. Grundy ,  Yeong S. Lin

    IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F10/00 ,  H01F10/18 ,  H01F10/187 ,  G11C11/15

    CPC分类号： G11C19/085

    摘要： A method of and apparatus for providing single wall self-biased magnetic domains in a film of uniaxial magnetic material. In addition to the conventional uniaxial magnetic film for supporting the single wall domains, a bias film is located adjacent thereto. The material characteristics of the two films and their thicknesses are chosen such that the exchange coupling between the two films provides the effect of an external field for supporting the single wall domains.

    摘要翻译： 一种在单轴磁性材料薄膜中提供单壁自偏磁区的方法和装置。 除了用于支撑单壁畴的常规单轴磁性膜之外，偏置膜位于其附近。 选择两种膜的材料特性及其厚度，使得两个膜之间的交换耦合提供了用于支撑单壁畴的外部场的效果。

    Magnetic memory
    26.
    发明授权
    Magnetic memory 失效
    磁记忆

    公开(公告)号：US3735373A

    公开(公告)日：1973-05-22

    申请号：US3735373D

    申请日：1971-07-21

    申请人： ANVAR

    发明人： BARBERON M ,  FRUCHARD E ,  FRUCHARD R ,  LORTHIOIR G ,  MADAR R

    IPC分类号： C09D5/23 ,  G11B11/105 ,  H01F10/18 ,  G11C11/02

    CPC分类号： H01F10/18 ,  G11B11/10504 ,  G11B11/10515 ,  G11B11/10517 ,  G11B11/10586 ,  H01F1/407

    摘要： An information support for a magnetic store provides storage locations made of a storage material of the formula Mn3 Rh Nx in which x has a value from 0.5 to 0.95 and is preferably in the region of 0.8. The storage material may be deposited as a thin layer or at discrete locations on a substrate such as glass or may be uniformly dispersed as fine particles within a matrix of plastics material forming a thin sheet. The storage material assumes a ferromagnetic state on being heated from a first temperature to a second temperature and then being cooled in a magnetic field to a temperature above a critical temperature. Recording of information is carried out by locally heating the information support material, for example by a laser beam, sufficiently for the ferromagnetic state to appear at the recording location on subsequent cooling in a magnetic field. Read-out is achieved by detecting the magnetization at the recording location directly or indirectly, and erasure can be obtained by cooling to below a critical temperature at which the magnetic state disappears.

    摘要翻译： 磁存储器的信息支持提供由式Mn3 Rh Nx的存储材料制成的存储位​​置，其中x具有0.5至0.95的值，并且优选地在0.8的范围内。 存储材料可以作为薄层沉积或者在诸如玻璃的基底上的离散位置处沉积，或者可以作为细颗粒均匀地分散在形成薄片的塑料材料的基质内。 存储材料在从第一温度加热到第二温度时呈现铁磁状态，然后在磁场中冷却到高于临界温度的温度。 信息的记录是通过例如激光束局部加热信息载体材料来进行的，足以使铁磁状态在磁场中随后的冷却中出现在记录位置。 通过直接或间接地检测记录位置处的磁化来实现读出，并且可以通过冷却到低于磁状态消失的临界温度来获得擦除。

    ELECTROMAGNETIC ABSORBER
    28.
    发明申请
    ELECTROMAGNETIC ABSORBER 审中-公开

    公开(公告)号：US20190269048A1

    公开(公告)日：2019-08-29

    申请号：US16319722

    申请日：2017-07-19

    申请人： Maxell Holdings, Ltd.

    发明人： Masao FUJITA ,  Toshio HIROI

    IPC分类号： H05K9/00 ,  B32B27/18 ,  H01F1/117 ,  H01F10/18 ,  B32B7/025 ,  B32B7/023

    摘要： Provided is an electromagnetic-wave absorber that can favorably absorb electromagnetic waves of a plurality of different frequencies in a high frequency band equal to or higher than the millimeter-wave band. The electromagnetic-wave absorber includes an electromagnetic-wave absorbing layer 1 in which a plurality of magnetic layers 1a-1e are stacked, each magnetic layer containing magnetic iron oxide that magnetically resonates at a high frequency in a band equal to or higher than the millimeter-wave band. A value of an anisotropic magnetic field (HA) of the magnetic iron oxide contained in at least one of the magnetic layers is different from that of the magnetic iron oxide contained in another of the magnetic layers.

    CRYSTAL AND LAMINATE
    30.
    发明申请
    CRYSTAL AND LAMINATE 有权
    水晶和层压板

    公开(公告)号：US20140255687A1

    公开(公告)日：2014-09-11

    申请号：US14349974

    申请日：2012-10-03

    申请人： Japan Science and Technology Agency

    发明人： Atsushi Tsukazaki

    IPC分类号： H01F10/18

    CPC分类号： H01F10/18 ,  B82Y25/00 ,  H01F10/193 ,  H01F10/265 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/265

    摘要： The present invention relates to a laminate that includes: a foundation layer (12) that is a crystal having a wurtzite structure; and a MgXM1-XO film (14) having a hexagonal film formed on the foundation layer, where M is a 3d transition metal element, and 0

    摘要翻译： 本发明涉及一种层压体，其包括：基底层（12），其是具有纤锌矿结构的晶体; 和具有形成在基础层上的六方膜的MgXM1-XO膜（14），其中M是3d过渡金属元素，0