PROCESS FOR PRODUCING POLYARYLENE ETHER NITRILE WITH EFFICIENTLY RECOVERING N-METHYLPYRROLIDONE SOLVENT

    公开(公告)号:US20210347943A1

    公开(公告)日:2021-11-11

    申请号:US16992115

    申请日:2020-08-13

    Abstract: A process for producing polyarylene ether nitrile, in which an N-methylpyrrolidone solvent can be efficiently recovered. The process includes the following steps: mixing N-methylpyrrolidone, potassium carbonate, 2,6-dichlorobenzonitrile, dihydric phenol and toluene, and carrying out a dehydration reaction and a polymerization reaction in sequence to obtain a high-viscosity polyarylene ether nitrile solution; then pelletizing and conveying polyarylene ether nitrile particles together with methanol to a primary vibrating screen to complete a primary replacement of N-methylpyrrolidone; then using a secondary vibrating screen to complete a secondary replacement of the solvent; subsequently, grinding the polyarylene ether nitrile particles and carrying out an extraction with methanol, and then centrifuging, washing with water and drying to obtain purified polyarylene ether nitrile powder; and finally distilling replacement liquid and centrifugation liquid to separate methanol from N-methylpyrrolidone.

    SELF-POWERED AUTOMOBILE EXHAUST GAS SENSOR AND PREPARATION METHOD THEREOF

    公开(公告)号:US20210320596A1

    公开(公告)日:2021-10-14

    申请号:US17153833

    申请日:2021-01-20

    Abstract: A self-powered automobile exhaust gas sensor including a supporting frame, a ferroelectric-triboelectric coupling functional film, and two metal electrodes. The ferroelectric-triboelectric coupling functional film comprises a first end fixed on the supporting beam in middle of the supporting frame, and a second end is freestanding. The two metal electrodes are grounded and adhered on the upper and lower sides of the supporting frame, respectively. An iron block is mounted on the top of the supporting frame. The ferroelectric-triboelectric coupling functional film includes a negative triboelectric charging layer, a ferroelectric composite material layer and a positive triboelectric charging layer; the ferroelectric composite material layer is prepared via casting method by mixing the ferroelectric material and the gas-sensitive material; the negative triboelectric charging layer has stronger electron affinity ability than the positive triboelectric charging layer, and attracts electrons from the positive triboelectric charging layer.

    Power Semiconductor Devices with Low Specific On-Resistance

    公开(公告)号:US20210273095A1

    公开(公告)日:2021-09-02

    申请号:US16877516

    申请日:2020-05-19

    Abstract: A low specific on-resistance (Ron,sp) power semiconductor device includes a power device and a transient voltage suppressor (TVS); wherein the power device comprises a gate electrode, a drain electrode, a bulk electrode, a source electrode and a parasitic body diode, the bulk electrode and the source electrode are shorted, the TVS comprises an anode electrode and a cathode electrode, the drain electrode of the power device and the anode electrode of the TVS are connected by a first metal to form a high-voltage terminal electrode, the source electrode of the power device and the cathode electrode of the TVS are connected by a second metal to form a low-voltage terminal electrode.

    Double Schottky-Barrier Diode
    296.
    发明申请

    公开(公告)号:US20210217901A1

    公开(公告)日:2021-07-15

    申请号:US17078109

    申请日:2020-10-23

    Abstract: A double Schottky-barrier diode includes a semi-insulating substrate, a left mesa formed by growth and etching on the semi-insulating substrate, a middle mesa formed by growth and etching on the semi-insulating substrate, a right mesa formed by growth and etching on the semi-insulating substrate, two anode probes and two air-bridge fingers. The two Schottky contacts are closely fabricated on the same mesa (middle mesa) in a back-to-back manner to obtain even symmetric C-V characteristics and odd symmetric I-V characteristics from the device level. The output of a frequency multiplier fabricated using the double Schottky-barrier diode only has odd harmonics, but no even harmonics, which is suitable for the production of high-order frequency multipliers. The cathodes of the two Schottky contacts are connected by the buffer layer without ohmic contact.

    Device and method for measuring film longitudinal temperature field during nitride epitaxial growth

    公开(公告)号:US20210143014A1

    公开(公告)日:2021-05-13

    申请号:US16618354

    申请日:2019-03-22

    Abstract: The present invention designs a measurement scheme for the longitudinal temperature of the film during nitride epitaxial growth, belongs to the field of semiconductor measurement technology. Epitaxial growth technology is one of the most effective methods for preparing nitride materials. The temperature during the growth process restricts the performance of the device. The non-contact temperature measurement method is generally used to measure the temperature of the graphite disk as the base, which can't obtain the longitudinal temperature. The present invention respectively measures the surface temperature of the epitaxial layer and the temperature of the graphite disk by ultraviolet and infrared radiation temperature measurement technologies, and then uses the finite element simulation method to perform thermal field analysis from the bottom surface of the substrate to the surface of the epitaxial layer, so that the longitudinal temperature is obtained, thereby providing a favorable basis for temperature regulation during nitride growth.

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