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公开(公告)号:US20220199355A1
公开(公告)日:2022-06-23
申请号:US17566518
申请日:2021-12-30
Applicant: ASML NETHERLANDS B.V.
Inventor: Albertus Victor Gerardus MANGNUS , Maikel Robert GOOSEN
IPC: H01J37/153 , H01J37/28
Abstract: Disclosed among other aspects is a charged particle inspection system including a phaseplate configured and arranged to modify the local phase of charged particles in a beam to reduce the effects of lens aberrations. The phaseplate is made up of an array of apertures with the voltage and/or a degree of obscuration of the apertures being controlled individually or in groups.
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公开(公告)号:US20220197155A1
公开(公告)日:2022-06-23
申请号:US17603812
申请日:2020-03-25
Applicant: ASML NETHERLANDS B.V.
Inventor: Sander Jeroen HERMANUSSEN , Johannes Petrus Martinus Bernardus VERMEULEN , Hans BUTLER , Bas JANSEN , Michael Marinus Anna STEUR
IPC: G03F7/20 , H01L21/687
Abstract: An object table configured to hold an object on a holding surface, the object table including: a main body; a plurality of burls extending from the main body, end surfaces of the burls defining the holding surface; an actuator assembly; and a further actuator assembly, wherein the actuator assembly is configured to deform the main body to generate a long stroke out-of-plane deformation of the holding surface based on shape information of the object that is to be held and the further actuator assembly is configured to generate a short stroke out-of-plane deformation of the holding surface.
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公开(公告)号:US11353797B2
公开(公告)日:2022-06-07
申请号:US16463430
申请日:2017-11-24
Applicant: ASML NETHERLANDS B.V.
Inventor: Yen-Wen Lu , Xiaorui Chen , Yang Lin
IPC: G05B19/418 , G03F7/20
Abstract: A method of controlling a computer process for designing or verifying a photolithographic component includes building a source tree including nodes of the process, including dependency relationships among the nodes, defining, for some nodes, at least two different process conditions, expanding the source tree to form an expanded tree, including generating a separate node for each different defined process condition, and duplicating dependent nodes having an input relationship to each generated separate node, determining respective computing hardware requirements for processing the node, selecting computer hardware constraints based on capabilities of the host computing system, determining, based on the requirements and constraints and on dependency relations in the expanded tree, an execution sequence for the computer process, and performing the computer process on the computing system.
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公开(公告)号:US11348756B2
公开(公告)日:2022-05-31
申请号:US15985763
申请日:2018-05-22
Applicant: ASML Netherlands B.V.
IPC: H01J37/153 , H01J37/12 , H01J37/09 , H01J37/065 , H01J37/317 , H01J37/02
Abstract: A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens.
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315.
公开(公告)号:US11347155B2
公开(公告)日:2022-05-31
申请号:US17055410
申请日:2019-04-23
Applicant: ASML Netherlands B.V.
IPC: G03F9/00 , G03F7/20 , G01N21/47 , G02F1/35 , G02F1/01 , G01B11/02 , G01N21/88 , G02B5/00 , H01S3/00 , H05G2/00
Abstract: An illumination source apparatus (500), suitable for use in a metrology apparatus for the characterization of a structure on a substrate, the illumination source apparatus comprising: a high harmonic generation, HHG, medium (502); a pump radiation source (506) operable to emit a beam of pump radiation (508); and adjustable transformation optics (510) configured to adjustably transform the transverse spatial profile of the beam of pump radiation to produce a transformed beam (518) such that relative to the centre axis of the transformed beam, a central region of the transformed beam has substantially zero intensity and an outer region which is radially outwards from the centre axis of the transformed beam has a non-zero intensity, wherein the transformed beam is arranged to excite the HHG medium so as to generate high harmonic radiation (540), wherein the location of said outer region is dependent on an adjustment setting of the adjustable transformation optics.
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公开(公告)号:US11347152B2
公开(公告)日:2022-05-31
申请号:US16961081
申请日:2018-12-19
Applicant: ASML Netherlands B.V. , ASML Holding N.V.
Inventor: Cornelis Melchior Brouwer , Krishanu Shome
Abstract: A system for and method of processing a wafer in which a scan signal is analyzed locally to extract information about alignment, overlay, mark quality, wafer quality, and the like.
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317.
公开(公告)号:US11347151B2
公开(公告)日:2022-05-31
申请号:US16394738
申请日:2019-04-25
Applicant: ASML Netherlands B.V.
IPC: G03F7/20 , G01N21/95 , G01N21/956 , G03F9/00
Abstract: A method of calculating electromagnetic scattering properties of a structure represented as a nominal structure and a structural perturbation, has the steps: 1008 numerically solving a volume integral equation comprising a nominal linear system 1004 to determine a nominal vector field being independent with respect to the structural perturbation; 1010 using a perturbed linear system 1006 to determine an approximation of a vector field perturbation arising from the structural perturbation, by solving a volume integral equation or an adjoint linear system. Matrix-vector multiplication of a nominal linear system matrix convolution operator may be restricted to sub-matrices; and 1012 calculating electromagnetic scattering properties of the structure using the determined nominal vector field and the determined approximation of the vector field perturbation.
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公开(公告)号:US11347150B2
公开(公告)日:2022-05-31
申请号:US17197167
申请日:2021-03-10
Applicant: ASML NETHERLANDS B.V.
Inventor: Wim Tjibbo Tel , Bart Peter Bert Segers , Everhardus Cornelis Mos , Emil Peter Schmitt-Weaver , Yichen Zhang , Petrus Gerardus Van Rhee , Xing Lan Liu , Maria Kilitziraki , Reiner Maria Jungblut , Hyunwoo Yu
Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号:US20220159817A1
公开(公告)日:2022-05-19
申请号:US17435861
申请日:2020-03-09
Applicant: ASML Netherlands B.V.
Inventor: Abhiram Lakshmi Ganesh Govindaraju , David Bessems , Sandeep Rai , Petrus Adrianus Willems , Serkan Kincal , Joshua Mark Lukens , Jon David Tedrow
Abstract: Provided is an apparatus that includes a first reservoir system including a first fluid reservoir configured to be in fluid communication with a nozzle supply system during operation of the nozzle supply system, a second reservoir system including a second fluid reservoir configured to be, at least part of the time during operation of the nozzle supply system, in fluid communication with the first reservoir system, a priming system configured to produce a fluid target material from a solid matter, and a fluid control system fluidly connected to the priming system, the first reservoir system, the second reservoir system, and the nozzle supply system. The fluid control system is configured to, during operation of the nozzle supply system: isolate at least one fluid reservoir and the nozzle supply system from the priming system, and maintain a fluid flow path between at least one fluid reservoir and the nozzle supply system.
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公开(公告)号:US20220155694A1
公开(公告)日:2022-05-19
申请号:US17438994
申请日:2020-02-17
Applicant: ASML NETHERLANDS B.V.
Inventor: Paul Jonathan TURNER , Anagnostis TSIATMAS
IPC: G03F7/20
Abstract: A method, computer program and associated apparatuses for metrology. The method includes determining whether a substrate or substrate portion is subject to a process effect. The method includes: obtaining inspection data including a plurality of sets of measurement data associated with a structure on the substrate or portion thereof (for example measurement pupils); and obtaining fingerprint data describing a spatial variation of a parameter of interest. An iterative mapping of the inspection data to the fingerprint data is performed. Whether the structure is subject to a process effect is based on a degree to which the iterative mapping converges on a solution.
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