公开(公告)号：US07858145B2

公开(公告)日：2010-12-28

申请号：US11211550

申请日：2005-08-26

Applicant: Tsuyoshi Furuse ,  Shosei Mori ,  Masahiro Terada ,  Taku Shimoda ,  Michiko Kato

Inventor： Tsuyoshi Furuse ,  Shosei Mori ,  Masahiro Terada ,  Taku Shimoda ,  Michiko Kato

IPC: B05D5/12

CPC classification number: C23C18/06 ,  C23C18/1216 ,  H01J9/027 ,  H01J31/127 ,  H01J2201/3165 ,  H05K3/105 ,  H05K2203/0522 ,  H05K2203/121

Abstract: Provided is a method for producing a pattern of an electroconductive member, comprising: a step of forming a resin film on a substrate surface; a step of incorporating the first metal component into the resin by applying to the resin a liquid which contains a complex of a first metal component, which contains also a second metal component different from the first component, and to which a compound forming a complex with the second metal component is contacting or contacted preliminary; and a step of baking the resin film to form the electroconductive member from the first metal component incorporated into the resin film. Thus, the second metal component is prevented from adversely affecting the first metal component to be incorporated into the resin.

Abstract translation: 提供一种用于制造导电构件图案的方法，包括：在衬底表面上形成树脂膜的步骤; 将第一金属成分加入到树脂中的步骤是向树脂施加含有第一金属成分的复合物的液体，该第一金属成分也含有与第一成分不同的第二金属成分，并且与其形成复合物的化合物 第二金属组分接触或接触初步; 以及从结合到树脂膜中的第一金属成分烘烤树脂膜以形成导电构件的步骤。 因此，防止了第二金属成分对要结合到树脂中的第一金属成分的不良影响。

公开(公告)号：US07758762B2

公开(公告)日：2010-07-20

申请号：US11765248

申请日：2007-06-19

Applicant: Fumio Kishi ,  Masato Yamanobe ,  Takeo Tsukamoto ,  Toshikazu Ohnishi ,  Keisuke Yamamoto ,  Sotomitsu Ikeda ,  Yasuhiro Hamamoto ,  Kazuya Miyazaki

Inventor： Fumio Kishi ,  Masato Yamanobe ,  Takeo Tsukamoto ,  Toshikazu Ohnishi ,  Keisuke Yamamoto ,  Sotomitsu Ikeda ,  Yasuhiro Hamamoto ,  Kazuya Miyazaki

IPC: B44C1/22

CPC classification number: H01J29/481 ,  H01J1/316 ,  H01J9/027 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/00 ,  H01J2329/0489

Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 μm, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.

Abstract translation: 电子发射器件包括一对电极和布置在电极之间的导电膜，并且包括携带石墨膜的电子发射区域。 石墨膜在使用波长514.5nm，光点直径1μm的激光光源的拉曼光谱分析中，表示散射光的峰值，其中1）位于1,580cm附近的峰（P2） -1大于位于1335cm -1附近的峰（P1）或2）位于1,335cm -1附近的峰（P1）的半峰宽不大于150cm -1。

公开(公告)号：US07705527B2

公开(公告)日：2010-04-27

申请号：US12037684

申请日：2008-02-26

Applicant: Toshikazu Ohnishi ,  Masato Yamanobe ,  Ichiro Nomura ,  Hidetoshi Suzuki ,  Yoshikazu Banno ,  Takeo Ono ,  Masanori Mitome

Inventor： Toshikazu Ohnishi ,  Masato Yamanobe ,  Ichiro Nomura ,  Hidetoshi Suzuki ,  Yoshikazu Banno ,  Takeo Ono ,  Masanori Mitome

IPC: H01J1/304 ,  H01J1/30

CPC classification number: H01J31/127 ,  H01J1/316 ,  H01J9/027 ,  H01J2201/3165 ,  H01J2329/0489

Abstract: An electron-emitting device includes a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract translation: 电子发射器件包括一对相对设置的电极和布置在电极之间并包括高电阻区域的导电膜。 高电阻区具有以碳为主要成分的沉积物。 电子发射器件可用于平板型图像形成装置的电子源。

公开(公告)号：US20100060141A1

公开(公告)日：2010-03-11

申请号：US12553727

申请日：2009-09-03

Applicant: Ouichi Kubota ,  Noritake Suzuki ,  Hideshi Kawasaki ,  Tamaki Kobayashi ,  Toshihiko Takeda

Inventor： Ouichi Kubota ,  Noritake Suzuki ,  Hideshi Kawasaki ,  Tamaki Kobayashi ,  Toshihiko Takeda

IPC: H01J1/62 ,  H01J1/02

CPC classification number: H01J1/316 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/3165 ,  H01J2329/0423 ,  H01J2329/0489

Abstract: In an electron beam device employing an electron-emitting device in which a gate and a cathode are provided to sandwich a recess portion formed on an insulating member, electrons are scattered after the collision against the gate and then extracted, it is made possible to easily obtain stable electron emission characteristics and also to prevent the electron-emitting device from being deteriorated or being fractured due to overheating even when an excessive heat has been generated. The electron-emitting device includes the cathode having a protrusion 30 positioned astride the outer surface of the insulating member and the inner surface of the recess portion formed in the insulating member, and the gate including a layered structure of at least two electroconductive layers. A thermal expansion coefficient of the electroconductive layer which is arranged at a part facing to the protrusion is larger than that of the other electroconductive layer.

Abstract translation: 在使用电子发射器件的电子束器件中，其中设置有栅极和阴极以夹着形成在绝缘构件上的凹陷区域，电子在撞击栅极之后被散射，然后被抽出，使得可以容易地 获得稳定的电子发射特性，并且即使当产生过多的热量时也防止电子发射器件由于过热而劣化或断裂。 电子发射器件包括阴极，其具有跨过绝缘构件的外表面的突起30和形成在绝缘构件中的凹部的内表面，并且栅极包括至少两个导电层的层叠结构。 布置在面向突起的部分处的导电层的热膨胀系数大于另一导电层的热膨胀系数。

公开(公告)号：US20090284127A1

公开(公告)日：2009-11-19

申请号：US12463715

申请日：2009-05-11

Applicant: Eiji Takeuchi ,  Takeo Tsukamoto

Inventor： Eiji Takeuchi ,  Takeo Tsukamoto

IPC: H01J1/62 ,  H01J9/02

CPC classification number: H01J1/316 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489

Abstract: An electron-emitting device has a pair of device electrodes formed on a substrate and an electroconductive film connected to the device electrodes. The electroconductive film has a first gap between the device electrodes and has a carbon film having a second gap at least in the first gap. The substrate is formed by stacking a nitrogen-contained activation suppressing layer and an activation accelerating layer having a nitrogen containing ratio smaller than that of the activation suppressing layer onto a base and has nitrogen containing ratio distribution in the activation suppressing layer in a film thickness direction. The nitrogen containing ratio of the activation suppressing layer at the activation accelerating layer side is smaller than that at the base side.

Abstract translation: 电子发射器件具有形成在衬底上的一对器件电极和连接到器件电极的导电膜。 导电膜在器件电极之间具有第一间隙，并且具有至少在第一间隙中具有第二间隙的碳膜。 基板是通过将含氮活化抑制层和活性促进层与活化抑制层的比例小于活化抑制层的活化促进层而形成的，并且在活化抑制层中具有膜厚度方向上的含氮比分布 。 活化促进层侧的活化抑制层的氮含量比基体侧的氮含有率小。

公开(公告)号：US20090237570A1

公开(公告)日：2009-09-24

申请号：US12297847

申请日：2007-06-29

Applicant: Takuto Moriguchi ,  Koki Nukanobu ,  Takahiro Sato ,  Takeo Tsukamoto

Inventor： Takuto Moriguchi ,  Koki Nukanobu ,  Takahiro Sato ,  Takeo Tsukamoto

IPC: H04N5/44 ,  H01J1/00 ,  H01J9/02

CPC classification number: H01J1/316 ,  H01J9/027 ,  H01J31/127 ,  H01J2201/3165

Abstract: A base body includes a first part and a second part, The second part has a lower thermal conductivity than the first part and is arranged adjacently to the first part. A first conductive film is formed on the first part and a second conductive film is formed on the second part. At least part of a gap is located above a boundary between the first part and the second part.

Abstract translation: 基体包括第一部分和第二部分。第二部分具有比第一部分更低的热导率并且被布置成与第一部分相邻。 第一导电膜形成在第一部分上，第二导电膜形成在第二部分上。 间隙的至少一部分位于第一部分和第二部分之间的边界上方。

公开(公告)号：US07492087B2

公开(公告)日：2009-02-17

申请号：US10653127

申请日：2003-09-03

Applicant: Toshitami Hara ,  Kazuya Miyazaki ,  Akihiko Yamano

Inventor： Toshitami Hara ,  Kazuya Miyazaki ,  Akihiko Yamano

IPC: H01J1/62 ,  H01J1/304

CPC classification number: H01J29/28 ,  H01J29/085 ,  H01J29/864 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/8625 ,  H01J2329/863

Abstract: An electron emission apparatus can effectively suppress the adverse effect of electric discharges that can take place between the oppositely disposed electrodes of the apparatus to which a high voltage is applied by dividing the electrode adapted to have a higher electric potential into segments in order to reduce the electrostatic capacitance between the electrodes. In the case of an electron emission apparatus comprising electron-emitting devices, said plurality of electron-emitting devices are disposed such that the direction along which those that can be driven simultaneously are arranged is not parallel with the direction along which the electrode is divided into the electrode segments in order to reduce the variable range of the electric current that can flow in the segments.

Abstract translation: 电子发射装置可以有效地抑制通过将适合于具有较高电位的电极划分成多个部分来施加高电压的设备的相对设置的电极之间可能发生的放电的不利影响，以便减少 电极之间的静电电容。 在包括电子发射器件的电子发射装置的情况下，所述多个电子发射器件被布置成使得可以同时驱动的那些方向被布置成不与电极分成多个方向平行 电极段以减少可流过段的电流的可变范围。

公开(公告)号：US20080315775A1

公开(公告)日：2008-12-25

申请号：US12064948

申请日：2006-08-25

Applicant: Hyun Tak Kim ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yoon Ho Song

Inventor： Hyun Tak Kim ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yoon Ho Song

IPC: H01J29/04 ,  H01J31/12 ,  H01L31/0224

CPC classification number: H01J31/127 ,  H01J1/316 ,  H01J2201/316 ,  H01J2201/3165 ,  H01J2329/0486 ,  H01J2329/0489

Abstract: An electron emission device having a high electron emitting rate and a display including the device are prodivided. The electron emission device using abrupt metal-insulator transition, the device including: a board; a metal-insulator transition (MIT) material layer disposed on the board and divided by a predetermined gap with portions of the divided MIT material layer facing one another; and electrodes connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer.

Abstract translation: 产生具有高电子发射速率的电子发射装置和包括该装置的显示器。 电子发射器件采用突发金属 - 绝缘体转换，器件包括：板; 金属 - 绝缘体转变（MIT）材料层，设置在所述板上并与所分割的MIT材料层的彼此面对的部分分开预定的间隙; 以及连接到分开的金属 - 绝缘体转移材料层的每个部分以将电子发射到分割的金属 - 绝缘体转移材料层的部分之间的间隙的电极。

公开(公告)号：US07435535B2

公开(公告)日：2008-10-14

申请号：US11415071

申请日：2006-05-02

Applicant: Yasuyuki Watanabe ,  Kazuya Ishiwata ,  Yoshimi Uda ,  Shinsaku Kubo

Inventor： Yasuyuki Watanabe ,  Kazuya Ishiwata ,  Yoshimi Uda ,  Shinsaku Kubo

IPC: G03F7/26

CPC classification number: H01J9/027 ,  G03F7/0035 ,  G03F7/0047 ,  G03F7/203 ,  H01J1/88 ,  H01J3/021 ,  H01J29/02 ,  H01J29/028 ,  H01J31/127 ,  H01J2201/3165 ,  H05K1/0306 ,  H05K3/0023

Abstract: A method for forming patterned insulating elements on a substrate includes a plurality of exposure steps of exposing a photosensitive paste provided on the substrate through at least one mask having a predetermined pattern; a developing step of developing the exposed photosensitive paste to form a precursor pattern; and a firing step of firing the precursor pattern to form the patterned insulating elements. This method is applied to a method for forming an electron source and a method for forming an image display device including the electron source.

Abstract translation: 用于在衬底上形成图案化绝缘元件的方法包括多个曝光步骤，通过具有预定图案的至少一个掩模曝光设置在衬底上的感光膏; 显影步骤，用于显影曝光的感光浆料以形成前体图案; 以及烧制前体图案以形成图案化的绝缘元件的烧制步骤。 该方法适用于形成电子源的方法和用于形成包括该电子源的图像显示装置的方法。

公开(公告)号：US20080238288A1

公开(公告)日：2008-10-02

申请号：US12051890

申请日：2008-03-20

Applicant: Jun Iba ,  Hisanobu Azuma

Inventor： Jun Iba ,  Hisanobu Azuma

IPC: H01J29/86

CPC classification number: H01J1/316 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489

Abstract: A three-dimensional structure forming a space in which a wiring-side portion of a device electrode is located is arranged on a rear plate. A surface potential of the three-dimensional structure is defined so that an electric field intensity of the space becomes weaker than an average electric field intensity expressed below, average electric field intensity=Va/d, where Va is application voltage of an anode electrode, and d is an interval between a rear plate and the face plate. The device electrode includes a high-temperature portion where temperature locally rises when current flows through the device electrode. The high-temperature portion is positioned in the space or at a distance of less than or equal to 20 μm from the space.

Abstract translation: 形成其中装置电极的布线侧部分所在的空间的三维结构布​​置在后板上。 定义三维结构的表面电位，使得空间的电场强度比以下表示的平均电场强度弱，<？in-line-formula description =“In-line Formulas”end =“lead “？>平均电场强度= Va / d，<？在线公式描述=”在线公式“end =”tail“？>其中Va是阳极电极的施加电压，d是 后板和面板。 器件电极包括当电流流过器件电极时温度局部上升的高温部分。 高温部分位于空间中或距离空间小于或等于20μm的距离处。