Electronic device and method for controlling execution of application based on execution sequence of applications

    公开(公告)号:US12254330B2

    公开(公告)日:2025-03-18

    申请号:US18156798

    申请日:2023-01-19

    Abstract: An electronic device displays a first screen is provided. The electronic device includes a list of one or more second applications in a display based on a first application, the second applications being different from the first application. The electronic device displays, in response to a first input of selecting one application of the one or more second applications based on the list, a second screen based on execution of the selected application in the display. The electronic device identifies information indicating at least one application switchable from the second screen within the first application, in response to a second input executing a third application based on the second screen. The electronic device identifies whether to switch from the second screen to a third screen based on execution of the third application to initiate the execution of the third application.

    Electronic device and learning model determination method for learning of electronic device

    公开(公告)号:US12254151B2

    公开(公告)日:2025-03-18

    申请号:US18507634

    申请日:2023-11-13

    Abstract: An electronic device is provided. The electronic device includes a touch sensor, a processor, and a memory. The processor may determine a touch input from a user as at least one of a force-touch input or a long-touch input, based on received touch data, determine whether a result of determining the touch data matches an intention of the user, store data that does not match the intention of the user as a result of determination among the touch data in the memory, and determine a type of an artificial intelligence (AI)-based pre-learning model to be used in the electronic device, based on touch input accuracy and the data that does not match the intention of the user.

    Multi-device integration with hearable for managing hearing disorders

    公开(公告)号:US12251292B2

    公开(公告)日:2025-03-18

    申请号:US17487920

    申请日:2021-09-28

    Abstract: Hearing management, using a portable device or integrated portable devices, can include generating during a hearing diagnostics phase an audiogram based on responses of a user to signals conveyed to the user. In response to detecting ambient noises during the hearing diagnostics phase, noise cancellation can be performed to cancel the ambient noises in conjunction with conveying the signals to the user. During a hearing enhancement phase, sounds can be captured with the portable device. The captured sounds can be enhanced in real-time during the hearing enhancement phase by amplifying select frequencies of the captured sounds using signal gain. The frequencies can be selected, and the signal gain determined based on the audiogram. The captured sounds, now enhanced, can be conveyed to the user as frequency-enhanced sounds.

    IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20250089394A1

    公开(公告)日:2025-03-13

    申请号:US18627797

    申请日:2024-04-05

    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate including first and second surfaces opposed to each other, a first pixel group in the substrate including a first to forth unit pixels adjacent to one another in a plan view, a photoelectric conversion area in the first to fourth unit pixels, a first isolation trench in the substrate surrounding the first pixel group, a second isolation trench in the substrate between the first unit pixel and the fourth unit pixel and between the second unit pixel and the third unit pixel, the second isolation trench in contact with the second surface of the substrate, and a first color filter on the second surface of the substrate covering the first pixel group.

    POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20250089326A1

    公开(公告)日:2025-03-13

    申请号:US18960198

    申请日:2024-11-26

    Abstract: A method of manufacturing a power semiconductor device includes forming a channel separation pattern on a substrate; forming a passivation layer on the substrate and the channel separation pattern; forming a gate hole, a source hole, and a drain hole penetrating the passivation layer in a same process step; and simultaneously forming a gate electrode pattern, a source electrode pattern, and a drain electrode pattern. The gate electrode pattern may be formed on the channel separation pattern. A side surface of the gate electrode pattern and a side surface of the channel separation pattern may have a step difference.

    THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20250089314A1

    公开(公告)日:2025-03-13

    申请号:US18588089

    申请日:2024-02-27

    Abstract: A three-dimensional semiconductor device includes a first active region on a substrate, including a first active region on a substrate, including a lower channel pattern and lower source/drain patterns connected to the lower channel pattern, the lower channel pattern including a plurality of lower semiconductor patterns stacked and spaced apart from each other in a first direction that is perpendicular to an upper surface of the substrate, and the lower semiconductor patterns including a lowermost first semiconductor pattern, a second active region stacked on the first active region, including an upper channel pattern and an upper source/drain pattern connected to the upper channel pattern, a lower gate electrode on the lower channel pattern, and a lower insulating pattern under the first semiconductor pattern, the first semiconductor pattern spaced apart from the lower insulating pattern in the first direction. The lower gate electrode includes a first portion adjacent to a first sidewall of the lower insulating pattern and extending in the first direction from an upper surface to a bottom surface of the lower gate electrode, a second portion adjacent to a second sidewall of the lower insulating pattern and extending in the first direction from the upper surface to the bottom surface of the lower gate electrode, the second sidewall facing the first sidewall in a second direction which is perpendicular to the first direction, and a third portion in contact with a bottom surface of the lower insulating pattern and extending from the first portion to the second portion in the second direction.

    SEMICONDUCTOR DEVICE
    330.
    发明申请

    公开(公告)号:US20250089299A1

    公开(公告)日:2025-03-13

    申请号:US18960679

    申请日:2024-11-26

    Abstract: A semiconductor device includes a first source/drain structure having a first length in a horizontal direction, as viewed in a planar cross-sectional view, the horizontal direction being perpendicular to a vertical direction, a second source/drain structure having a second length in the horizontal direction, as viewed in the planar cross-sectional view, the second length being less than the first length, channels extending between the first source/drain structure and the second source/drain structure, the channels being spaced apart from each other in the vertical direction, at least one sacrificial pattern between adjacent ones of the channels, and a trench penetrating the channels and the at least one sacrificial pattern.

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