Abstract:
Parallelization of decoding of a data stream encoded with a variable length code includes determining one or more markers, each of which indicates a position within the encoded data stream. The determined markers are included into the encoded data stream together with the encoded data. At the decoder side, the markers are parsed from the encoded data stream and based on the extracted markers. The encoded data is separated into partitions, which are decoded separately and in parallel.
Abstract:
A memory circuit includes a first memory cell node capacitor, a first memory cell node transistor, a second memory cell node having a second memory cell node capacitor and a second memory cell node transistor, and a pre-charging circuit for pre-charging the first and second memory cell nodes to first and second voltage levels, respectively. The circuit includes a reference memory cell having first and second reference cell transistors with an equalizing transistor between, and a sense amplifier that detects a potential difference between reference bit lines from the reference memory cell and the first or second memory cell node, respectively. The reference cell transistors and equalizing transistor perform a first voltage equalization of the memory cell nodes at a predetermined voltage and a second voltage equalization of the memory cell nodes based on first or second reference signals respectively input to the first or second reference cell transistor.
Abstract:
An analog input signal is sampled, and the sampled analog input signal is converted to a digital value. A calibration value is also sampled, and a single bit of an N bit offset value is calculated from the sampled calibration value. The sampling operations are alternatively performed so that one bit of the offset value is generated for each generated digital value. For example, the process is repeated N times to calculate all N bits of the offset value while generating N digital values.
Abstract:
Adaptive scaling digital techniques attempt to place the system close to the timing failure so as to maximize energy efficiency. Rapid recovery from potential failures is usually by slowing the system clock and/or providing razor solutions (instruction replay.) These techniques compromise the throughput. We present a technique to provide local in-situ fault resilience based on dynamic slack borrowing. This technique is non-intrusive (needs no architecture modification) and has minimal impact on throughput.
Abstract:
A level shifter includes an output stage transistor and a level controller. The level controller receives a selection signal and provides a reference voltage at a gate terminal of the output stage transistor based on the selection signal. The output stage transistor, on being enabled by the reference voltage, provides a first level shifted output based on a first output reference voltage.
Abstract:
A memory architecture includes a plurality of local input and output circuitries, with each local input and output circuitry associated with at least one memory bank. The memory architecture also includes a global input and output circuitry, which includes a plurality of global sub-write circuitries, is coupled to the plurality of local input and output circuitries One global sub-write circuitry is enabled and provides a write-data to a selected local input and output circuitry.
Abstract:
Parallelization of decoding of a data stream encoded with a variable length code includes determining one or more markers, each of which indicates a position within the encoded data stream. The determined markers are included into the encoded data stream together with the encoded data. At the decoder side, the markers are parsed from the encoded data stream and based on the extracted markers. The encoded data is separated into partitions, which are decoded separately and in parallel.
Abstract:
A method for identifying non stuck-at faults in a read-only memory (ROM) includes generating a golden value of a victim cell, providing a fault-specific pattern through an aggressor cell, generating a test reading of the victim cell in response to the provided fault-specific pattern, and determining whether the ROM has at least one non stuck-at fault. The determination is based on a comparison of the golden value and the test reading of the victim cell.
Abstract:
A system for generating test signals to test characteristics of input-output (IO) cells includes a memory and a processor coupled together through an integrated circuit (IC) chip. The IC chip includes a controller configured to exchange signals between the memory and the processor through IO cells of the IC chip. The IC chip further includes a protocol sequence generator for generating test signals for testing characteristics of the IO cells.
Abstract:
An output driver circuit includes first, second, third, and fourth transistors having a common current path, wherein a gate of the first transistor receives a first switching signal, a gate of the second transistor receives a first reference voltage, a gate of the third transistor receives a second reference voltage, and a gate of the fourth transistor receives a second switching signal, and wherein a first capacitor is coupled between the gate of the first transistor and the gate of the third transistor, a second capacitor is coupled between the gate of the second transistor and the gate of the fourth transistor, and an output signal is provided at a node coupling the second and third transistors.