Process for forming silicon oxide material
    34.
    发明申请
    Process for forming silicon oxide material 失效
    用于形成氧化硅材料的方法

    公开(公告)号:US20030161951A1

    公开(公告)日:2003-08-28

    申请号:US10090103

    申请日:2002-02-27

    发明人: Zheng Yuan Xinyun Xia

    IPC分类号: C23C016/00 B05D005/12

    摘要: A thin layer of silicon oxide is formed by cyclic introduction of a silicon-containing precursor gas and an oxidizing gas separated by an intervening purge step. The resulting thin oxide layer enables subsequent conventional CVD of oxide to produce a more uniform deposited oxide layer over nonhomogenous surfaces, for example the silicon nitride mask/thermal oxide liner surfaces created during fabrication of shallow trench isolation structures.

    摘要翻译: 通过循环引入含硅前体气体和通过中间吹扫步骤分离的氧化气体形成氧化硅薄层。 所得到的薄氧化物层使得随后的常规氧化物CVD能够在不均匀的表面上产生更均匀的沉积氧化物层,例如在浅沟槽隔离结构的制造期间产生的氮化硅掩模/热氧化物衬里表面。

    Substrate retainer
    36.
    发明申请

    公开(公告)号:US20020179251A1

    公开(公告)日:2002-12-05

    申请号:US10199738

    申请日:2002-07-18

    CPC分类号: B24B37/32 B24B37/28

    摘要: A retainer is used with an apparatus for polishing a substrate. The substrate has upper and lower surfaces and a lateral, substantially circular, perimeter. The apparatus has a polishing pad with an upper polishing surface for contacting and polishing the lower face of the substrate. The retainer has an inward facing retaining face for engaging and retaining the substrate against lateral movement during polishing of the substrate. The retaining face engages a substrate perimeter at more than substantially a single discrete circumferential location along the perimeter.