Write signal control circuit in an optical disk drive
    32.
    发明申请
    Write signal control circuit in an optical disk drive 失效
    在光盘驱动器中写入信号控制电路

    公开(公告)号:US20050002293A1

    公开(公告)日:2005-01-06

    申请号:US10880533

    申请日:2004-07-01

    CPC classification number: G11B7/00456 G11B7/1267

    Abstract: A write signal control circuit in an optical disk drive for adjusting the duty cycle of the write signals by a duty cycle adjusting unit. The write signal control circuit includes a write signal generator for converting an EFM signal into the write signals according to the write strategy waveform generating rules, a duty cycle adjusting unit for adjusting the duty cycle of each write signal according to adjusting parameters and for outputting adjusted write signals, and a duty cycle detector for detecting the duty cycle of each adjusted write signal and outputting a respective duty cycle control signal. The duty cycle adjusting unit further receives the duty cycle control signal to adapt the adjusting parameters.

    Abstract translation: 一种光盘驱动器中的写入信号控制电路,用于通过占空比调节单元来调整写入信号的占空比。 写入信号控制电路包括写入信号发生器,用于根据写入策略波形生成规则将EFM信号转换成写入信号;占空比调整单元,用于根据调整参数调整每个写入信号的占空比, 写入信号,以及占空比检测器,用于检测每个经调整的写入信号的占空比,并输出相应的占空比控制信号。 占空比调整单元还接收占空比控制信号以适应调整参数。

    High gate coupling non-volatile memory structure
    35.
    发明授权
    High gate coupling non-volatile memory structure 有权
    高栅极耦合非易失性存储器结构

    公开(公告)号:US06501123B2

    公开(公告)日:2002-12-31

    申请号:US09878897

    申请日:2001-06-11

    Applicant: Chen-Chin Liu

    Inventor: Chen-Chin Liu

    CPC classification number: H01L29/42324 H01L27/115 H01L27/11521

    Abstract: A non-volatile memory structure having a higher gate-coupling ratio. The structure includes a substrate, shallow trench isolation layers, buried source/drain terminals, tunnel oxide layers, a floating gate with a three-dimensional structure, dielectric layers and a control gate. A portion of the floating gate is located inside an opening in the dielectric layer so that a three-dimensional structure formed. Since the subsequently formed control gate has a larger effective surface area, a higher gate-coupling ratio is obtained.

    Abstract translation: 具有较高栅极耦合比的非易失性存储器结构。 该结构包括衬底,浅沟槽隔离层,埋地源极/漏极端子,隧道氧化物层,具有三维结构的浮动栅极,介电层和控制栅极。 浮动栅极的一部分位于电介质层的开口内部,从而形成三维结构。 由于随后形成的控制栅极具有较大的有效表面积,所以获得更高的栅极耦合比。

    Fixing device in a venetian blind
    37.
    发明授权
    Fixing device in a venetian blind 失效
    固定装置在百叶帘中

    公开(公告)号:US06279642B1

    公开(公告)日:2001-08-28

    申请号:US09545855

    申请日:2000-04-10

    Applicant: Feng-Chin Liu

    Inventor: Feng-Chin Liu

    CPC classification number: E06B9/382

    Abstract: A fixing device in a venetian blind integrally made of high molecular material comprises a cord engaging part, a band passing part, and a core. The cord engaging part is at one side of a base, having two engaging plates oppositely and crossly disposed and a joint to connect with each other. Each of the engaging plates has an engaging groove near the joint thereof, and an engaging chamber is formed in the base. The band passing part is at the other side of the base having two opposite and crossly arranged sticks. An elongated gap formed between each stick and one edge on the base respectively and a bottom gap formed between the bottom part of each stick and the base respectively. The core is at the center of the base is formed at center of the base with a central axial through hole along the base.

    Abstract translation: 由高分子材料整体制成的百叶窗中的固定装置包括一个帘线啮合部分,一个带通部分和一个芯部。 帘线接合部位于基座的一侧,具有相对且交叉设置的两个接合板和彼此连接的接头。 每个接合板在其接头附近具有接合槽,并且在基座中形成接合室。 带通过部分位于基部的另一侧,具有两个相对且交叉布置的棒。 在每个棒和底座上的一个边缘之间分别形成细长的间隙,并且分别形成在每个棒的底部和底座之间的底部间隙。 芯部位于基座的中心,形成在基部的中心,沿着基部具有中心的轴向通孔。

    Epoxide formation by continuous in-situ synthesis process
    39.
    发明授权
    Epoxide formation by continuous in-situ synthesis process 失效
    通过连续原位合成过程形成环氧化物

    公开(公告)号:US6127556A

    公开(公告)日:2000-10-03

    申请号:US991598

    申请日:1997-12-16

    CPC classification number: C07D317/62 C07D303/36

    Abstract: In a method of preparing an aminoepoxide wherein a protected aminoaldehyde is reacted with a halomethyl organometallic reagent in an appropriate solvent at a temperature above -80.degree. C., wherein said halomethyl organometallic reagent is formed by reaction between an organometallic reagent and a dihalomethane, the improvement comprising flowing said protected aminoaldehyde into a mixing zone maintained at a temperature below 0.degree. C., also flowing said halomethyl organometallic reagent in said mixing zone for contacting in said mixing zone with said protected aminoaldehyde and also withdrawing from said mixing zone reaction products of said protected aminoaldehyde and said halomethyl organometallic reagent.

    Abstract translation: 在制备其中被保护的氨基醛与卤代甲基有机金属试剂在合适的溶剂中在-80℃以上反应的方法中,其中所述卤代甲基有机金属试剂是由有机金属试剂和二卤代甲烷之间的反应形成的, 改进包括将保护的氨基醛流入保持在低于0℃的混合区,同时使所述混合区中的卤代甲基有机金属试剂流动,以使所述混合区与所述受保护的氨基醛接触,并且还从所述混合区抽出反应产物 所述保护的氨基醛和所述卤代甲基有机金属试剂。

Patent Agency Ranking