公开(公告)号：US20160018482A1

公开(公告)日：2016-01-21

申请号：US14801800

申请日：2015-07-16

Applicant: Crocus Technology Inc.

Inventor： Reuven Yehoshua ,  Bertrand F. Cambou ,  Yaron Oren-Pines ,  Douglas Lee

IPC: G01R33/09

CPC classification number: G01R33/098 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: An apparatus includes groups of magnetic tunnel junctions, where the magnetic tunnel junctions in each group are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel. The apparatus further includes a first conductive layer including conductive interconnects, a second conductive layer including straps, and a third conductive layer including field lines, each field line configured to generate a magnetic field for configuring an operating point of a corresponding subset of the magnetic tunnel junctions in each group based on a current flow through each field line. The magnetic tunnel junctions in each group are disposed between and connected to a corresponding one of the conductive interconnects and a corresponding one of the straps. The second conductive layer is disposed between the first conductive layer and the third conductive layer.

Abstract translation: 一种装置包括一组磁性隧道结，其中每组中的磁隧道结布置成行，每行中的磁隧道结串联连接，并行连接。 该装置还包括包括导电互连的第一导电层，包括带的第二导电层和包括场线的第三导电层，每个场线被配置为产生用于配置磁隧道的相应子集的工作点的磁场 基于每个场线上的当前流量，每组中的接合点。 每个组中的磁性隧道结布置在相应的一个导电互连件和相应的一个带状物之间并连接到其中。 第二导电层设置在第一导电层和第三导电层之间。

公开(公告)号：US20160018481A1

公开(公告)日：2016-01-21

申请号：US14801797

申请日：2015-07-16

Applicant: Crocus Technology Inc.

Inventor： Bertrand F. Cambou ,  Douglas Lee ,  Yaron Oren-Pines ,  Stuart Rumley

IPC: G01R33/09

CPC classification number: G01R33/098 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: An apparatus includes circuits including a first circuit and a second circuit, each circuit including subarrays of magnetic tunnel junctions, where: (1) the magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel; and the subarrays are connected in series. The apparatus further comprises a field line configured to generate a first magnetic field for configuring an operating point of the first circuit based on a current flow through the field line, wherein impedance of one or more of the magnetic tunnel junctions in each of the plurality of rows of each subarray of magnetic tunnel junctions included in the first circuit is configured based on the first magnetic field.

Abstract translation: 一种装置包括包括第一电路和第二电路的电路，每个电路包括磁隧道结的子阵列，其中：（1）每个子阵列中的磁隧道结布置成行，每行中的磁隧道结串联连接 并行并行连接; 并且子阵列被串联连接。 该装置还包括一个场线，被配置为产生用于基于通过场线的电流来配置第一电路的工作点的第一磁场，其中多个磁场中的每一个中的一个或多个磁隧道结的阻抗 基于第一磁场来构造包括在第一电路中的磁隧道结的每个子阵列的行。

公开(公告)号：US20160018480A1

公开(公告)日：2016-01-21

申请号：US14801794

申请日：2015-07-16

Applicant: Crocus Technology Inc.

Inventor： Bertrand F. Cambou ,  Reuven Yehoshua ,  Douglas Lee ,  Yaron Oren-Pines

IPC: G01R33/09

CPC classification number: G01R33/098 ,  G01R33/093 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: An apparatus includes circuits including a first circuit and a second circuit, each circuit including subarrays of magnetic tunnel junctions, where: (1) the magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel; and (2) the subarrays are connected in series. The apparatus further comprises a field line configured to generate a first magnetic field for configuring an operating point of the first circuit based on a current flow through the field line, where the impedance of a subset of the plurality of rows in each subarray of magnetic tunnel junctions included in the first circuit is configured based on the first magnetic field.

Abstract translation: 一种装置包括包括第一电路和第二电路的电路，每个电路包括磁隧道结的子阵列，其中：（1）每个子阵列中的磁隧道结布置成行，每行中的磁隧道结串联连接 并行并行连接; 和（2）子阵列串联连接。 该装置还包括一个场线，其被配置为产生第一磁场，用于基于通过场线的电流来配置第一电路的工作点，其中磁隧道的每个子阵列中的多个行的子集的阻抗 基于第一磁场配置包括在第一电路中的结。

公开(公告)号：US20160018479A1

公开(公告)日：2016-01-21

申请号：US14801792

申请日：2015-07-16

Applicant: Crocus Technology Inc.

Inventor： Bertrand F. Cambou ,  Reuven Yehoshua ,  Yaron Oren-Pines ,  Douglas Lee

IPC: G01R33/09

CPC classification number: G01R33/098 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: An apparatus includes circuits and a module configured to determine an external magnetic field based on a parameter of each circuit. Each circuit includes an array of magnetic tunnel junctions partitioned into subarrays. The magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel. The subarrays are connected in series. Each magnetic tunnel junction includes a storage layer having a storage magnetization and a sense layer having a sense magnetization. Each magnetic tunnel junction is configured such that the sense magnetization and impedance of each magnetic tunnel junction vary in response to an external magnetic field. The parameter of each circuit varies based on a combined impedance of the multiple magnetic tunnel junctions. The module is implemented in at least one of a memory or a processing device.

Abstract translation: 一种装置包括电路和模块，其被配置为基于每个电路的参数来确定外部磁场。 每个电路包括分成子阵列的磁隧道结阵列。 每个子阵列中的磁隧道结排列成行，每行中的磁隧道结串联连接，并行连接。 子阵列串联连接。 每个磁性隧道结包括具有存储磁化的存储层和具有感测磁化的感测层。 每个磁性隧道结被配置成使得每个磁性隧道结的感测磁化强度和阻抗响应于外部磁场而变化。 每个电路的参数根据多个磁隧道结的组合阻抗而变化。 该模块在存储器或处理设备中的至少一个中实现。

公开(公告)号：US20150372223A1

公开(公告)日：2015-12-24

申请号：US14734960

申请日：2015-06-09

Applicant: Crocus Technology Inc.

Inventor： Bertrand Cambou ,  Ken Mackay ,  Ruby Yehoshua

IPC: H01L43/02 ,  H01L43/08

CPC classification number: G01L1/125 ,  G11C11/161

Abstract: An apparatus includes an elongated strap with a first platform and a second platform linked by a connector that is substantially narrower than the first platform and the second platform, where the first platform and the second platform are each configured to receive a stress sensitive device.

Abstract translation: 一种装置包括具有第一平台的细长带和通过基本上比第一平台和第二平台窄的连接器连接的第二平台，其中第一平台和第二平台各自构造成接收应力敏感装置。

公开(公告)号：US20150357006A1

公开(公告)日：2015-12-10

申请号：US14732561

申请日：2015-06-05

Applicant: Crocus Technology Inc.

Inventor： Thao Tran ,  Douglas Lee ,  Bertrand Cambou

IPC: G11C7/00 ,  G06F3/06

CPC classification number: G11C7/00 ,  G06F3/061 ,  G06F3/0659 ,  G06F3/0673 ,  G06F13/38

Abstract: An apparatus has magnetic logic units a logic circuit configured to receive a serial input bit stream at an input node. Individual bits of data from the serial input bit stream are serially written into individual magnetic logic units without buffering the serial input bit stream between the input node and the individual magnetic logic units. Individual bits of data from individual magnetic logic units are serially read to produce a serial output bit stream on an output node without buffering the serial output bit stream between the individual magnetic logic units and the output node.

Abstract translation: 一种装置具有磁逻辑单元，逻辑电路被配置为在输入节点处接收串行输入位流。 来自串行输入比特流的单独的数据位被串行地写入单个磁逻辑单元，而不在输入节点和各个逻辑单元之间缓冲串行输入比特流。 串行读取来自各个逻辑单元的单独的数据位以在输出节点上产生串行输出比特流，而不会缓冲各个逻辑单元与输出节点之间的串行输出比特流。

公开(公告)号：US09054029B2

公开(公告)日：2015-06-09

申请号：US14468234

申请日：2014-08-25

Applicant: Crocus Technology Inc.

Inventor： Neal Berger ,  Mourad El Baraji ,  Amitay Levi

IPC: H01L27/22 ,  H01L29/82 ,  G11C11/16 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L27/222 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  H01L23/5226 ,  H01L23/528 ,  H01L29/82 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in the plurality of MRAM cells, and a second conductive layer. The first conductive layer includes a conductive portion electrically connected to at least one of the plurality of MRAM cells, and a field line configured to write data to the at least one of the plurality of MRAM cells. The second conductive layer includes a conductive interconnect electrically connected to the at least one of the plurality of MRAM cells, where the magnetic layer is disposed between the first conductive layer and the second conductive layer. At least one of the plurality of MRAM cells is directly attached to the second conductive layer and the strap.

Abstract translation: 存储器件包括包括多个磁随机存取存储器（MRAM）单元的磁性层，第一导电层，包括连接多个MRAM单元中包括的MRAM单元的带的层和第二导电层。 第一导电层包括电连接到多个MRAM单元中的至少一个的导电部分，以及被配置为将数据写入多个MRAM单元中的至少一个的场线。 第二导电层包括电连接到多个MRAM单元中的至少一个MRAM单元的导电互连，其中磁性层设置在第一导电层和第二导电层之间。 多个MRAM单元中的至少一个直接附接到第二导电层和带。

公开(公告)号：US20150077096A1

公开(公告)日：2015-03-19

申请号：US14552338

申请日：2014-11-24

Applicant: Crocus Technology Inc.

Inventor： Bertrand F. Cambou ,  Douglas J. Lee ,  Ken Mackay ,  Barry Hoberman

IPC: G01R33/09 ,  G01D5/16 ,  G01C17/02

CPC classification number: G01D5/12 ,  G01B7/30 ,  G01C17/02 ,  G01D5/16 ,  G01R33/0029 ,  G01R33/096 ,  G01R33/098 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

公开(公告)号：US20140361392A1

公开(公告)日：2014-12-11

申请号：US14468234

申请日：2014-08-25

Applicant: Crocus Technology Inc.

Inventor： Neal Berger ,  Mourad El Baraji ,  Amitay Levi

IPC: H01L27/22 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L27/222 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  H01L23/5226 ,  H01L23/528 ,  H01L29/82 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in the plurality of MRAM cells, and a second conductive layer. The first conductive layer includes a conductive portion electrically connected to at least one of the plurality of MRAM cells, and a field line configured to write data to the at least one of the plurality of MRAM cells. The second conductive layer includes a conductive interconnect electrically connected to the at least one of the plurality of MRAM cells, where the magnetic layer is disposed between the first conductive layer and the second conductive layer. At least one of the plurality of MRAM cells is directly attached to the second conductive layer and the strap.

Abstract translation: 存储器件包括包括多个磁随机存取存储器（MRAM）单元的磁性层，第一导电层，包括连接多个MRAM单元中包括的MRAM单元的带的层和第二导电层。 第一导电层包括电连接到多个MRAM单元中的至少一个的导电部分，以及被配置为将数据写入多个MRAM单元中的至少一个的场线。 第二导电层包括电连接到多个MRAM单元中的至少一个MRAM单元的导电互连，其中磁性层设置在第一导电层和第二导电层之间。 多个MRAM单元中的至少一个直接附接到第二导电层和带。

公开(公告)号：US08652856B2

公开(公告)日：2014-02-18

申请号：US13848641

申请日：2013-03-21

Applicant: Crocus Technology Inc.

Inventor： Jean Pierre Nozieres ,  Jason Reid

IPC: H01L21/00

CPC classification number: H01L43/02 ,  G11C11/16 ,  H01L21/00 ,  H01L27/00 ,  H01L43/12

Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

Abstract translation: 本文公开了通过使用沟槽形成具有薄膜部件的电子器件的方法。 通过在沟槽中沉积薄膜而形成薄膜成分中的一种或多种，​​然后将沉积的薄膜加工成具有所需的厚度。