System and method of co-allocating a reservation spanning different compute resources types
    32.
    发明授权
    System and method of co-allocating a reservation spanning different compute resources types 有权
    共同分配跨越不同计算资源类型的预留的系统和方法

    公开(公告)号:US08418186B2

    公开(公告)日:2013-04-09

    申请号:US13169417

    申请日:2011-06-27

    Abstract: A system and method of co-allocating resources within a compute environment are disclosed. The method embodiment of the invention comprises receiving a request for a reservation for a first type of resource, analyzing constraints and guarantees associated with the first type of resource, identifying a first group of resources that meet the request for the first type of resource and storing in a first list, receiving a request for a reservation for a second type of resource, analyzing constraints and guarantees associated with the second type of resource, identifying a second group of resources that meet the request for the second type of resource and storing in a second list, calculating a co-allocation parameter between the first group of resources and the second group of resources and reserving resources according to the calculated co-allocation parameter of the first group of resources and the second group of resources. The request may also request exclusivity of the reservation.

    Abstract translation: 公开了一种在计算环境内共同分配资源的系统和方法。 本发明的方法实施例包括接收对第一类型的资源的预留的请求,分析与第一类型资源相关联的约束和保证,识别满足对第一类型资源的请求的第一组资源和存储 在第一列表中,接收对第二类型资源的预留的请求,分析与第二类型资源相关联的约束和保证,识别符合第二类型资源的请求的第二资源组并存储在 第二列表,根据所计算的第一组资源和第二组资源的共同分配参数,计算第一资源组和第二组资源之间的共同分配参数和预留资源。 该请求也可以请求排他性的预约。

    Heat Treatment Process and Photovoltaic Device Based on Said Process
    33.
    发明申请
    Heat Treatment Process and Photovoltaic Device Based on Said Process 有权
    基于所述工艺的热处理工艺和光伏器件

    公开(公告)号:US20130061903A1

    公开(公告)日:2013-03-14

    申请号:US13228983

    申请日:2011-09-09

    CPC classification number: H01L31/0322 H01L31/0749 Y02E10/541

    Abstract: Low-temperature sulfurization/selenization heat treatment processes for photovoltaic devices are provided. In one aspect, a method for fabricating a photovoltaic device is provided. The method includes the following steps. A substrate is provided that is either (i) formed from an electrically conductive material or (ii) coated with at least one layer of a conductive material. A chalcogenide absorber layer is formed on the substrate. A buffer layer is formed on the absorber layer. A transparent front contact is formed on the buffer layer. The device is contacted with a chalcogen-containing vapor having a sulfur and/or selenium compound under conditions sufficient to improve device performance by filling chalcogen vacancies within the absorber layer or the buffer layer or by passivating one or more of grain boundaries in the absorber layer, an interface between the absorber layer and the buffer layer and an interface between the absorber layer and the substrate.

    Abstract translation: 提供了光伏器件的低温硫化/硒化热处理工艺。 一方面,提供一种制造光伏器件的方法。 该方法包括以下步骤。 提供了(i)由导电材料形成或(ii)涂覆有至少一层导电材料的衬底。 在基板上形成硫族化物吸收层。 在吸收层上形成缓冲层。 在缓冲层上形成透明的前触点。 在足以通过在吸收层或缓冲层内填充硫属元素空位来提高器件性能的条件下,或者通过钝化吸收层中的一个或多个晶界来使该器件与含硫和/或硒化合物的含硫属元素的蒸气接触 ,吸收层和缓冲层之间的界面以及吸收层和衬底之间的界面。

    Capping Layers for Improved Crystallization
    34.
    发明申请
    Capping Layers for Improved Crystallization 有权
    封盖层用于改进结晶

    公开(公告)号:US20130037090A1

    公开(公告)日:2013-02-14

    申请号:US13207269

    申请日:2011-08-10

    Abstract: Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of fabricating a kesterite film having a formula Cu2−xZn1+ySn(S1−zSez)4+q, wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; and −1≦q≦1 is provided. The method includes the following steps. A substrate is provided. A bulk precursor layer is formed on the substrate, the bulk precursor layer comprising Cu, Zn, Sn and at least one of S and Se. A capping layer is formed on the bulk precursor layer, the capping layer comprising at least one of Sn, S and Se. The bulk precursor layer and the capping layer are annealed under conditions sufficient to produce the kesterite film having values of x, y, z and q for any given part of the film that deviate from average values of x, y, z and q throughout the film by less than 20 percent.

    Abstract translation: 提供了基于这些膜的Kesterite Cu-Zn-Sn-(Se,S)膜的制造技术和改进的光电器件。 一方面,一种制备具有式Cu2-xZn1 + ySn(S1-zSez)4 + q的kesterite膜的方法,其中0≦̸ x≦̸ 1; 0≦̸ y≦̸ 1; 0≦̸ z≦̸ 1; 和-1≦̸ q≦̸ 1。 该方法包括以下步骤。 提供基板。 本体前体层形成在衬底上,该主体前体层包含Cu,Zn,Sn以及S和Se中的至少一个。 在本体前体层上形成覆盖层,所述覆盖层包含Sn,S和Se中的至少一种。 本体前体层和覆盖层在足以产生具有x,y,z和q值的kesterite膜的条件下退火,对于膜的任何给定部分偏离x,y,z和q的平均值,整个 电影不到20%。

    Lightweight under engine shield
    36.
    发明授权
    Lightweight under engine shield 有权
    发动机罩下轻量级

    公开(公告)号:US08366170B2

    公开(公告)日:2013-02-05

    申请号:US12857871

    申请日:2010-08-17

    CPC classification number: B60R13/0861 Y10T428/2419 Y10T428/24636

    Abstract: A heat shield having a body portion formed from a non-woven material and having an internal side and an external side. First and second heat patches are disposed on the internal side of the body portion. A first channel is disposed between the first and second heat patches and a second channel is disposed under the first and second heat patches. A convex air drafting portion is disposed on a rearward side of said vehicular heat shield.

    Abstract translation: 一种隔热罩,具有由无纺布材料形成并具有内侧和外侧的主体部分。 第一和第二散热片设置在主体部分的内侧上。 第一通道设置在第一和第二散热片之间,第二通道设置在第一和第二散热片之下。 凸起的空气牵伸部分设置在所述车辆隔热罩的后侧。

Patent Agency Ranking