公开(公告)号：US08805678B2

公开(公告)日：2014-08-12

申请号：US11558145

申请日：2006-11-09

Applicant: David Wu

Inventor： David Wu

IPC: G10L11/00 ,  G06F15/00 ,  G10L21/00 ,  G10L19/14 ,  G10L19/00

CPC classification number: G11B20/10527 ,  G10L19/008 ,  G11B2020/10546 ,  G11B2220/2541 ,  H04N5/85 ,  H04N9/806

Abstract: Aspects of a method and system for an asynchronous pipeline architecture for multiple independent dual/stereo channel PCM processing are provided. Asynchronously pipeline processing of audio information comprised within a decoded PCM frame may be based on metadata information generated from the decoded PCM frame and an output decoding rate. The asynchronously pipeline processing may comprise mixing a primary audio information portion and a secondary audio information, portion, sample rate converting the audio information, and buffering the audio information. The asynchronously pipeline processing may comprise multiple pipeline stages. Feeding back an output of one of the pipeline stages to an input of a previous one of the pipeline stages may be enabled. The metadata information may comprise a frame start indicator associated with the decoded PCM frame and/or a plurality of mixing coefficients.

Abstract translation: 提供了用于多个独立双/立体声信道PCM处理的异步流水线架构的方法和系统的方面。 包含在解码的PCM帧内的音频信息的异步​​流水线处理可以基于从解码的PCM帧生成的元数据信息和输出解码速率。 异步流水线处理可以包括混合主音频信息部分和次要音频信息，部分，转换音频信息的采样率，以及缓冲音频信息。 异步流水线处理可以包括多个流水线级。 可以启用将一个流水线级的输出反馈到前一个流水线级的输入。 元数据信息可以包括与解码的PCM帧相关联的帧开始指示符和/或多个混合系数。

公开(公告)号：US08546855B2

公开(公告)日：2013-10-01

申请号：US13239865

申请日：2011-09-22

Applicant: Jingrong Zhou ,  David Wu ,  James F. Buller

Inventor： Jingrong Zhou ,  David Wu ,  James F. Buller

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L27/0255 ,  H01L21/84 ,  H01L27/1203

Abstract: Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a P+ substrate junction as a charging protection device. Embodiments also include a conductive path from the SOI transistor drain, through a conductive contact, a metal line, a second conductive contact, an SOI diode, isolated from the transistor, a third conductive contact, a second conductive line, and a fourth conductive contact to a P+-doped substrate contact in the bulk silicon layer of the SOI substrate.

Abstract translation: 形成具有改进的电荷保护的浅沟槽隔离绝缘体上硅（SOI）器件。 实施例包括作为充电保护装置的SOI膜二极管和P +衬底结。 实施例还包括从SOI晶体管漏极，通过导电触点，金属线，第二导电触点，与晶体管隔离的SOI二极管，第三导电触点，第二导线和第四导电触点的导电路径 到SOI衬底的体硅层中的P +掺杂的衬底接触。

公开(公告)号：US20130178753A1

公开(公告)日：2013-07-11

申请号：US13344830

申请日：2012-01-06

Applicant: Shing-Wai David WU

Inventor： Shing-Wai David WU

IPC: A61B5/0255

CPC classification number: A61B5/02438 ,  A61B5/0022 ,  A61B5/681

Abstract: A heart rate monitoring system includes a wrist-borne heart rate monitor for detecting the heart rate of a wearer and having a mobile telephone network transmitter and/or WiFi transmitter for transmitting the heart rate data to the cloud. A display device includes a mobile telephone network receiver and/or WiFi receiver and receives the data and/or information processed from the data on the cloud and displays the same to the wearer.

Abstract translation: 心率监测系统包括用于检测佩戴者的心率的手腕心率监测器，并具有用于将心率数据发送到云的移动电话网络发射器和/或WiFi发射器。 显示设备包括移动电话网络接收器和/或WiFi接收器，并且接收从云上的数据处理的数据和/或信息，并将其显示给佩戴者。

公开(公告)号：US08134208B2

公开(公告)日：2012-03-13

申请号：US11861928

申请日：2007-09-26

Applicant: Zhonghai Shi ,  David Wu ,  Mark Michael ,  Donna Michael, legal representative

Inventor： Zhonghai Shi ,  David Wu ,  Mark Michael

IPC: H01L27/12

CPC classification number: H01L29/41733 ,  H01L21/28518 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/78654 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.

Abstract translation: 提供了具有改善的接触电阻的半导体器件和制造这种半导体器件的方法。 这些半导体器件包括半导体器件结构和接触。 在半导体器件结构的表面部分和侧壁部分处，触点电耦合到半导体器件结构。

公开(公告)号：US08003466B2

公开(公告)日：2011-08-23

申请号：US12099726

申请日：2008-04-08

Applicant: Zhonghai Shi ,  David Wu ,  Jingrong Zhou ,  Ruigang Li

Inventor： Zhonghai Shi ,  David Wu ,  Jingrong Zhou ,  Ruigang Li

IPC: H01L21/336 ,  H01L21/00 ,  H01L21/84 ,  H01L21/338 ,  H01L21/8234 ,  H01L21/3205 ,  H01L21/4763 ,  H01L27/148 ,  H01L29/66 ,  H01L29/76 ,  H01L21/12 ,  H01L27/088

CPC classification number: H01L21/823437 ,  H01L21/823431 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/785

Abstract: A fabrication process for a FinFET device is provided. The process begins by providing a semiconductor wafer having a layer of conductive material such as silicon. A whole-field arrangement of fins is then formed from the layer of conductive material. The whole-field arrangement of fins includes a plurality of conductive fins having a uniform pitch and a uniform fin thickness. Next, a cut mask is formed over the whole-field arrangement of fins. The cut mask selectively masks sections of the whole-field arrangement of fins with a layout that defines features for a plurality of FinFET devices. The cut mask is used to remove a portion of the whole-field arrangement of fins, the portion being unprotected by the cut mask. The resulting fin structures are used to complete the fabrication of the FinFET devices.

Abstract translation: 提供了一种用于FinFET器件的制造工艺。 该过程开始于提供具有诸如硅的导电材料层的半导体晶片。 然后由导电材料层形成翅片的全场排列。 翅片的全场布置包括具有均匀间距和均匀翅片厚度的多个导电翅片。 接下来，在翅片的整个场布置上形成切割掩模。 切割掩模选择性地屏蔽翅片的全场布置的部分，其布局限定了用于多个FinFET器件的特征。 切割掩模用于去除翅片的全场排列的一部分，该部分未被切割掩模保护。 所得到的翅片结构用于完成FinFET器件的制造。

公开(公告)号：US20110114217A1

公开(公告)日：2011-05-19

申请号：US12619949

申请日：2009-11-17

Applicant: David WU

Inventor： David WU

IPC: B21F45/00

CPC classification number: B21F35/00 ,  B21F3/02

Abstract: An abutting apparatus of spring configuration machine which has a machine platform includes a first and second axial transmission mechanisms and an abutting assembly. The first axial transmission mechanism includes a first actuator, a first lead screw and a first sliding seat screwed with the first lead screw. The second axial transmission mechanism includes a second actuator fixed to the first sliding seat, a second lead screw driven to rotate by the second actuator and a second sliding seat screwed with the second lead screw and linearly moved relatively to the first sliding seat. Via the first and second axial transmission mechanisms, the abutting assembly fixed to the second sliding seat can make a 2-D movement in vertical and horizontal directions relative to the machine platform, such that the degree of freedom to adjust the abutting assembly can be enhanced significantly.

Abstract translation: 具有机器平台的弹簧构造机的邻接装置包括第一和第二轴向传动机构和邻接组件。 第一轴向传动机构包括第一致动器，第一导螺杆和与第一导螺杆螺合的第一滑动座。 第二轴向传动机构包括固定到第一滑动座的第二致动器，被第二致动器驱动的第二导螺杆和与第二导螺杆螺合并且相对于第一滑动座线性移动的第二滑动座。 通过第一和第二轴向传动机构，固定到第二滑动座的抵接组件可相对于机器平台在垂直和水平方向上进行2-D运动，从而可以提高调节邻接组件的自由度 显着。

公开(公告)号：US07670932B2

公开(公告)日：2010-03-02

申请号：US11762133

申请日：2007-06-13

Applicant: Jianhong Zhu ,  Fred Hause ,  David Wu

Inventor： Jianhong Zhu ,  Fred Hause ,  David Wu

IPC: C12N15/75

CPC classification number: H01L21/28518 ,  H01L21/28247 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7833

Abstract: MOS structures with contact projections for lower contact resistance and methods for fabricating such MOS structures have been provided. In an embodiment, a method comprises providing a semiconductor substrate, fabricating a gate stack on the substrate, and forming a contact projection on the substrate. Ions of a conductivity-determining type are implanted within the substrate using the gate stack as an ion implantation mask to form impurity-doped regions within the substrate. A metal silicide layer is formed on the contact projection and a contact is formed to the metal silicide layer. The contact is in electrical communication with the impurity-doped regions via the contact projection.

Abstract translation: 已经提供了具有用于较低接触电阻的接触突起的MOS结构以及用于制造这种MOS结构的方法。 在一个实施例中，一种方法包括提供半导体衬底，在衬底上制造栅极堆叠，以及在衬底上形成接触突起。 使用栅极堆叠作为离子注入掩模将电导率确定类型的离子注入到衬底内，以在衬底内形成杂质掺杂区域。 在接触突起上形成金属硅化物层，并且与金属硅化物层形成接触。 触点通过接触突起与杂质掺杂区电连通。

公开(公告)号：US20090137315A1

公开(公告)日：2009-05-28

申请号：US11998112

申请日：2007-11-28

Applicant: Shing-Wai David Wu

Inventor： Shing-Wai David Wu

IPC: A63F9/24

CPC classification number: A63F13/24 ,  A63F13/02 ,  A63F13/06 ,  A63F13/235 ,  A63F2300/1006 ,  A63F2300/1025 ,  A63F2300/1043

Abstract: A set of components is designed for use with proprietary game console controllers. The proprietary controllers include a first hand-held controller having a transmitter for wirelessly transmitting first control signals corresponding to user-input at the first controller to the game console. It also includes a socket. A second hand-held controller has a cable with a plug which would ordinarily be inserted into the socket of the first controller whereupon the first transmitter would hereinbefore relay second control signals corresponding to user-input at the second controller via the cable to the game console. The set of components “unties” the two controllers and includes a wireless receiver having a plug for insertion to the socket; a cradle for receiving the second controller and including a second transmitter having a second socket into which the plug of the cable is received. The second transmitter transmits the second control signals. The receiver is tuned to receive the second control signals and the first transmitter also transmits the second control signals to the game console.

Abstract translation: 一组组件设计用于专有游戏机控制器。 专利控制器包括具有发射器的第一手持控制器，用于将与第一控制器的用户输入相对应的第一控制信号无线地发送到游戏控制台。 它还包括一个插座。 第二手持控制器具有通常插入到第一控制器的插座中的插头的电缆，因此第一发射器在此之前将经由电缆的与第二控制器的用户输入相对应的第二控制信号中继到游戏控制台 。 组件“unties”组成的两个控制器并且包括具有用于插入插座的插头的无线接收器; 用于接收第二控制器并且包括具有第二插座的第二发射器的支架，电缆的插头被接收到该第二插座中。 第二发射机发送第二控制信号。 接收器被调谐以接收第二控制信号，并且第一发射机还将第二控制信号发送到游戏控制台。

公开(公告)号：US20090081860A1

公开(公告)日：2009-03-26

申请号：US11861534

申请日：2007-09-26

Applicant: Jingrong ZHOU ,  Mark MICHAEL ,  Donna Michael ,  David WU ,  James F. BULLER ,  Akif SULTAN

Inventor： Jingrong ZHOU ,  Mark MICHAEL ,  Donna Michael ,  David WU ,  James F. BULLER ,  Akif SULTAN

IPC: H01L21/425

CPC classification number: H01L21/26513 ,  H01L21/26586 ,  H01L21/823807 ,  H01L29/1083

Abstract: The halo implant technique described herein employs a halo implant mask that creates a halo implant shadowing effect during halo dopant bombardment. A first transistor device structure and a second transistor device structure are formed on a wafer such that they are orthogonally oriented to each other. A common halo implant mask is created with features that prevent halo implantation of the diffusion region of the second transistor device structure during halo implantation of the diffusion region of the first transistor device structure, and with features that prevent halo implantation of the diffusion region of the first transistor device structure during halo implantation of the diffusion region of the second transistor device structure. The orthogonal orientation of the transistor device structures and the pattern of the halo implant mask obviates the need to create multiple implant masks to achieve different threshold voltages for the transistor device structures.

Abstract translation: 本文描述的光晕植入技术采用在光晕掺杂剂轰击期间产生晕轮植入物阴影效应的光晕注入掩模。 第一晶体管器件结构和第二晶体管器件结构形成在晶片上，使得它们彼此正交地取向。 创建了常见的光晕注入掩模，其特征在于，在第一晶体管器件结构的扩散区域的晕圈注入期间防止第二晶体管器件结构的扩散区域的光晕注入，并且具有防止第 在第二晶体管器件结构的扩散区的晕圈注入期间的第一晶体管器件结构。 晶体管器件结构的正交取向和光晕注入掩模的图案消除了创建多个注入掩模以实现晶体管器件结构的不同阈值电压的需要。

公开(公告)号：US20090078998A1

公开(公告)日：2009-03-26

申请号：US11861928

申请日：2007-09-26

Applicant: Zhongai Shi ,  David Wu ,  Mark Michael ,  Donna Michael

Inventor： Zhongai Shi ,  David Wu ,  Mark Michael ,  Donna Michael

IPC: H01L23/48 ,  H01L21/4763 ,  H01L27/01

CPC classification number: H01L29/41733 ,  H01L21/28518 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/78654 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.

Abstract translation: 提供了具有改善的接触电阻的半导体器件和制造这种半导体器件的方法。 这些半导体器件包括半导体器件结构和接触。 在半导体器件结构的表面部分和侧壁部分处，触点电耦合到半导体器件结构。