公开(公告)号：US20070133128A1

公开(公告)日：2007-06-14

申请号：US11636251

申请日：2006-12-08

申请人： Hajime Arai

发明人： Hajime Arai

IPC分类号： G11B5/48

CPC分类号： G11B5/486

摘要： A head suspension includes a load beam to apply load onto a head that writes and reads information to and from the hard disk and a flexure attached to the load beam and supporting the head. The flexure has write wires and read wires connected to the head. The flexure includes a substrate made of a conductive thin plate, a base insulating layer made of flexible resin and formed on the substrate, and the wires are arranged on the base insulating film. A ground layer is formed at least partly between the substrate and the base insulating layer. The ground layer only corresponds to the write wires in a width direction of the flexure. The conductivity of the ground layer is higher than that of the substrate that is made of a conductive thin plate.

摘要翻译： 磁头悬架包括负载梁，以将负载施加到头上，该磁头向硬盘写入和读取信息，以及附接到负载梁并支撑磁头的挠曲。 挠曲具有连接到头部的写入线和读取线。 挠曲包括由导电薄板制成的基板，由柔性树脂制成并形成在基板上的基底绝缘层，并且导线布置在基底绝缘膜上。 至少部分地在基板和基底绝缘层之间形成接地层。 接地层仅对应于挠曲件的宽度方向上的写入线。 接地层的导电率高于由导电薄板制成的基片的导电性。

公开(公告)号：US20060187587A1

公开(公告)日：2006-08-24

申请号：US11359317

申请日：2006-02-21

申请人： Hajime Arai ,  Ikuo Someya

发明人： Hajime Arai ,  Ikuo Someya

IPC分类号： G11B5/48

CPC分类号： G11B5/4833 ,  G11B5/40 ,  H05K1/0259 ,  H05K1/056 ,  H05K1/167 ,  H05K3/28

摘要： A head suspension prevents a read element from electrostatic discharge damage without employing a static electricity remover, and at the same time, secures the frequency characteristics of a write signal. The head suspension has a load beam to apply load to a slider that writes and reads data to and from a hard disk, a flexture made of a conductive thin plate attached to the load beam, to support the slider, write wires connected to the slider and formed on an insulating base layer that is made of flexible resin and is formed on the flexure, and coating made of conductive flexible resin to discharge static electricity. The coating is formed over the read wires and is extended to the surface of the flexure.

摘要翻译： 磁头悬挂防止读取元件在不使用静电除去器的情况下受到静电放电损坏，并且同时确保写入信号的频率特性。 磁头悬架具有负载梁，以将负载施加到从硬盘写入和读取数据的滑块，由连接到负载梁的导电薄板制成的挠曲件，以支撑滑块，写入连接到滑块的电线 并且形成在由柔性树脂制成并形成在挠曲件上的绝缘基底层上，以及由导电柔性树脂制成的涂层以释放静电。 涂层形成在读取的导线上并延伸到挠曲件的表面。

公开(公告)号：US06967820B2

公开(公告)日：2005-11-22

申请号：US10195797

申请日：2002-07-15

申请人： Norio Horie ,  Itsuro Kikkawa ,  Hajime Arai

发明人： Norio Horie ,  Itsuro Kikkawa ,  Hajime Arai

IPC分类号： G11B21/21 ,  G11B5/48 ,  G11B21/16

CPC分类号： G11B5/486

摘要： A head suspension for a disk drive has a flexure extended from a load beam toward a plate. The flexure is structured to prevent fluttering. The head suspension has the plate attached to a carriage and turned around a spindle, the load beam having a rigid part and a resilient part and supported by the plate with the resilient part adjoining an end of the plate, to apply load on a slider arranged at a front end of the load beam, the flexure having a head to write and read data to and from a hard disk and a conductive path to transmit write and read signals to and from the head, the flexure being attached to the load beam and extended toward the plate, and a fixing piece formed on the flexure. The fixing piece is fixed to a resilient material at the end of the plate.

摘要翻译： 用于磁盘驱动器的磁头悬架具有从负载梁向板延伸的挠曲。 弯曲结构旨在防止飘动。 磁头悬架具有附接到滑架并转动主轴的板，负载梁具有刚性部分和弹性部分，并且由板支撑，弹性部分邻接板的端部，以将负载施加在布置的滑块上 在负载梁的前端处，挠曲件具有头部，用于向硬盘和导电路径写入和读取数据，以向头部传送写入信号和读取信号，挠曲件附接到负载梁， 朝向板延伸，以及形成在弯曲部上的固定片。 固定件固定在板的端部的弹性材料上。

公开(公告)号：US06329688B1

公开(公告)日：2001-12-11

申请号：US09037031

申请日：1998-03-09

申请人： Hajime Arai

发明人： Hajime Arai

IPC分类号： H01L29788

CPC分类号： H01L27/11517 ,  H01L27/115 ,  H01L29/511

摘要： A nonvolatile semiconductor memory device includes a silicon substrate, a floating gate electrode formed on silicon substrate with a silicon oxide film therebetween, a control gate electrode formed on a portion of floating gate electrode with an interlayer insulating film therebetween, and an erase electrode formed on another portion of floating gate electrode with an insulating film therebetween. The insulating film includes a silicon nitride film and a silicon oxide film.

摘要翻译： 非易失性半导体存储器件包括硅衬底，形成在其上具有氧化硅膜的硅衬底上的浮栅电极，在其间具有层间绝缘膜的浮置栅电极的一部分上形成的控制栅电极和形成在 浮栅电极的另一部分在其间具有绝缘膜。 绝缘膜包括氮化硅膜和氧化硅膜。

公开(公告)号：US5707753A

公开(公告)日：1998-01-13

申请号：US552037

申请日：1995-11-02

申请人： Tatsuya Kurihara ,  Itsuo Takeuchi ,  Tsukasa Higashi ,  Hajime Arai

发明人： Tatsuya Kurihara ,  Itsuo Takeuchi ,  Tsukasa Higashi ,  Hajime Arai

IPC分类号： H01F1/032 ,  H01F1/03 ,  H01F1/14 ,  H01F1/153 ,  H01F41/00 ,  H01F1/00

CPC分类号： H01F1/15391 ,  H01F1/0304 ,  H01F1/143 ,  Y10T428/12465 ,  Y10T428/12493 ,  Y10T428/12507 ,  Y10T428/2933 ,  Y10T428/294

摘要： A pulse generating element formed of a switchable magnetic wire is worked so as to have an arcuate shape such that the ratio R/d between the radius of curvature R and diameter d of the wire in a state free from external force ranges from 65 to 95. This is achieved by subjecting a wire of a ferromagnetic material, such as Fe--Co--V, to drawing-bending work. The pulse generating element, which is obtained by cutting the switchable magnetic wire to a predetermined length, is restricted to a substantially straight state by a retaining member, and undergoes a drastic flux reversal when it is subjected to an alternating field.

摘要翻译： 加工由可切换电磁线形成的脉冲发生元件，以便具有弓形形状，使得曲线半径R与直径+ E之间的比R / d，线外的d + EE不在外部 力范围从65到95.这是通过对诸如Fe-Co-V的铁磁材料的线进行拉伸加工来实现的。 通过将可切换电磁线切割成预定长度而获得的脉冲发生元件通过保持部件被限制为基本上直的状态，并且当经受交变场时，会产生急剧的磁通反转。

公开(公告)号：US5695893A

公开(公告)日：1997-12-09

申请号：US642857

申请日：1996-05-06

申请人： Hajime Arai ,  Shigeto Okada ,  Yoji Sakurai ,  Jun-ichi Yamaki

发明人： Hajime Arai ,  Shigeto Okada ,  Yoji Sakurai ,  Jun-ichi Yamaki

IPC分类号： C01G49/00 ,  H01M4/02 ,  H01M4/58 ,  H01M10/0525 ,  H01M10/36 ,  H01M4/52

CPC分类号： H01M10/0525 ,  C01G49/009 ,  H01M4/5825 ,  H01M2300/0025

摘要： A positive electrode material for use in lithium batteries contains a compound represented by the chemical formula Li.sub.x Fe.sub.2 (SO.sub.4).sub.3 (0

摘要翻译： 用于锂电池的正极材料包含由化学式LixFe2（SO4）3（0

公开(公告)号：US5478759A

公开(公告)日：1995-12-26

申请号：US156748

申请日：1993-11-24

申请人： Tomoharu Mametani ,  Masahiro Shimizu ,  Katsuhiro Tsukamoto ,  Hajime Arai ,  Heiji Kobayashi

发明人： Tomoharu Mametani ,  Masahiro Shimizu ,  Katsuhiro Tsukamoto ,  Hajime Arai ,  Heiji Kobayashi

IPC分类号： H01L21/761 ,  H01L21/265 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/8239 ,  H01L21/8242 ,  H01L27/092 ,  H01L27/10 ,  H01L27/108 ,  H01L21/266

CPC分类号： H01L21/823878 ,  H01L21/76218 ,  H01L27/0921 ,  H01L27/1052

摘要： A thick isolation oxide film is selectively formed on a surface of a silicon substrate so as to isolate an element formation region. Ions are implanted into a region in silicon substrate through the thick isolation oxide film. Thus, retrograde wells, having impurity concentration peak positions are formed in the region of silicon substrate positioned under the isolation oxide film. Then, an upper part of the isolation oxide film is removed away to form an isolation oxide film with a reduced thickness. Isolation oxide film has a reduced isolation length L. Thus, a semiconductor device is provided, which permits restriction of the narrow channel effect and the substrate biasing effect when the size of elements is reduced.

摘要翻译： 在硅衬底的表面上选择性地形成厚的隔离氧化膜，以隔离元件形成区域。 离子通过厚的隔离氧化膜植入到硅衬底的区域中。 因此，在位于隔离氧化膜下方的硅衬底的区域中形成具有杂质浓度峰值位置的逆行阱。 然后，去除隔离氧化膜的上部，形成厚度减小的隔离氧化膜。 隔离氧化膜具有减小的隔离长度L.因此，提供了一种半导体器件，当元件的尺寸减小时，允许限制窄沟道效应和衬底偏置效应。

公开(公告)号：US5415957A

公开(公告)日：1995-05-16

申请号：US130194

申请日：1993-10-01

申请人： Shigeto Okada ,  Hideaki Ohtsuka ,  Hajime Arai ,  Masasi Shibata ,  Masahiro Ichimura

发明人： Shigeto Okada ,  Hideaki Ohtsuka ,  Hajime Arai ,  Masasi Shibata ,  Masahiro Ichimura

IPC分类号： H01M4/58 ,  H01M10/05 ,  H01M6/14 ,  H01M4/52

CPC分类号： H01M4/5825

摘要： A cathode material made of anhydrous ferric sulfate with a hexagonal crystal structure is presented for use in a secondary battery which generates a stable open-circuit-voltage of about 3.6 volts and offers a recharge cycling capacity of over 100 times. The cathode material is obtained by heating hydrous iron sulfate material in a temperature range between 250.degree. and 600.degree. C. to remove the water of crystallization. The secondary battery made with this cathode material provides a long-service life and a stable output voltage economically, because the starting material, iron sulfate, is abundantly available at relatively low cost.

摘要翻译： 提供了一种由六方晶体结构的无水硫酸铁制成的阴极材料，用于产生约3.6伏的稳定的开路电压并提供超过100次充电循环能力的二次电池。 阴极材料是通过在250〜600℃的温度范围加热含水硫酸铁材料来除去结晶水而得到的。 用这种阴极材料制成的二次电池经济地提供长使用寿命和稳定的输出电压，因为原料硫酸铁以相当低的成本可用。

公开(公告)号：US4927783A

公开(公告)日：1990-05-22

申请号：US180162

申请日：1988-04-11

申请人： Hajime Arai ,  Hiroshi Harada

发明人： Hajime Arai ,  Hiroshi Harada

IPC分类号： H01L21/60 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/43

CPC分类号： H01L21/28525 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53271 ,  H01L2924/0002

摘要： A semiconductor device in accordance with the present invention comprises: a silicon substrate (1); an insulator layer (2) formed on the silicon substrate; a contact hole (8e) opened through the insulator layer; and a filler of doped silicon (5) grown on the silicon substrate (1) in the contact hole (8e) by solid phase precipitation from an alloy film (6) containing silicon and a doping element.

摘要翻译： 根据本发明的半导体器件包括：硅衬底（1）; 形成在硅衬底上的绝缘体层（2） 通过所述绝缘体层开口的接触孔（8e）; 以及通过从含有硅和掺杂元素的合金膜（6）固相沉淀而在接触孔（8e）中在硅衬底（1）上生长的掺杂硅（5）的填料。

公开(公告)号：US4531420A

公开(公告)日：1985-07-30

申请号：US454457

申请日：1982-12-29

申请人： Hajime Arai ,  Shozi Haga ,  Tadashi Nozaki

发明人： Hajime Arai ,  Shozi Haga ,  Tadashi Nozaki

IPC分类号： F16C33/10 ,  F16C33/74 ,  F16D23/14 ,  F16H57/04 ,  F16J15/32 ,  B21D53/12 ,  B21H1/14 ,  B21K1/02

CPC分类号： F16H57/0469 ,  F16C33/1085 ,  F16C33/74 ,  F16D23/148 ,  F16J15/324 ,  F16C2361/43 ,  Y10T29/49702 ,  Y10T74/19991

摘要： A rotary shaft having a bearing surface and an oil seal surface formed close to each other at a portion of a shaft body rotatably mounted in a case of a transmission, wherein a groove is circumferentially formed on the periphery of the shaft body between the bearing surface and the oil seal surface before each of the surfaces is finished, so that the bearing surface and the oil seal surface can be finished so as to be suitable for their respective functions.

摘要翻译： 一种旋转轴，其具有在可转动地安装在变速器的壳体上的轴体的一部分处形成为彼此靠近的轴承面和油封面，其特征在于，在所述轴体的轴承面 并且在每个表面之前的油封表面被完成，使得轴承表面和油封表面可以被完成以适合于它们各自的功能。