公开(公告)号：US08976148B2

公开(公告)日：2015-03-10

申请号：US13602678

申请日：2012-09-04

Applicant: Hyun Suk Lee ,  Sang Ho Lee ,  Tah Joon Park ,  Kang Joo Kim

Inventor： Hyun Suk Lee ,  Sang Ho Lee ,  Tah Joon Park ,  Kang Joo Kim

IPC: G06F3/041

CPC classification number: G06F3/0416 ,  G06F3/044

Abstract: There are provided a data processing method and a touch sensing apparatus. The data processing method includes (a) obtaining a plurality of pieces of sensing data according to one or more touch inputs; (b) selecting one or more pieces of temporary reference data having the minimum difference value between adjacent other pieces of sensing data; (c) calculating difference values between the one or more pieces of temporary reference data; (d) calculating an N number of difference values between the N number of pieces of sensing data obtained from the nodes included in the Kth row and an N number of pieces of sensing data obtained from nodes included in the K-1th row; and (e) determining the temporary reference data having a relatively small representative value as reference sensing data of the Kth row.

Abstract translation: 提供了数据处理方法和触摸感测装置。 数据处理方法包括：（a）根据一个或多个触摸输入获得多条感测数据; （b）选择在相邻的其它感测数据之间具有最小差值的一个或多个临时参考数据; （c）计算一条或多条临时参考数据之间的差值; （d）计算从包括在第K行中的节点获得的N个感测数据中的N个差值的N个数和从包括在第K-1行中的节点获得的N个感测数据; 和（e）确定具有相对小的代表值的临时参考数据作为第K行的参考感测数据。

公开(公告)号：US20130285975A1

公开(公告)日：2013-10-31

申请号：US13556806

申请日：2012-07-24

Applicant: Kyung Hee HONG ,  Hyun Suk LEE ,  Tah Joon PARK ,  Sang Ho LEE ,  Moon Suk JEONG ,  Yong Il KWON ,  Byeong Hak JO

Inventor： Kyung Hee HONG ,  Hyun Suk LEE ,  Tah Joon PARK ,  Sang Ho LEE ,  Moon Suk JEONG ,  Yong Il KWON ,  Byeong Hak JO

IPC: G06F3/044 ,  G06F3/041

CPC classification number: G06F3/044 ,  G06F3/0416

Abstract: There are provided a touch screen panel and a touch screen apparatus. The touch screen panel includes a plurality of first electrodes formed on a substrate and extending in a first axis direction; and a plurality of second electrodes formed on the substrate and extending in a second axis direction perpendicular to the first axis direction, wherein a plurality of first slits are provided in a diagonal direction with respect to the first axis direction and the second axis direction between the plurality of first electrodes and the plurality of second electrodes, and at least one second slit is formed within each of the plurality of second electrodes.

Abstract translation: 提供了触摸屏面板和触摸屏设备。 触摸屏面板包括形成在基板上并沿第一轴线方向延伸的多个第一电极; 以及多个第二电极，形成在所述基板上，并且在与所述第一轴方向垂直的第二轴方向上延伸，其中，多个第一狭缝相对于所述第一轴方向和所述第二轴方向相对于所述第一轴方向和所述第二轴方向 多个第一电极和多个第二电极，并且至少一个第二狭缝形成在多个第二电极的每一个内。

公开(公告)号：US20130257789A1

公开(公告)日：2013-10-03

申请号：US13532088

申请日：2012-06-25

Applicant: Yong Il KWON ,  Hyun Suk Lee ,  Tah Joon Park

Inventor： Yong Il KWON ,  Hyun Suk Lee ,  Tah Joon Park

IPC: G06F3/044

CPC classification number: G06F3/044 ,  G06F3/0418

Abstract: There are provided a touch sensing apparatus and method. The touch sensing apparatus includes a sensing circuit unit detecting a plurality of signals from a plurality of changes in capacitance generated in a plurality of electrodes provided in a panel unit; and a signal processing unit comparing, with predetermined reference levels, levels of at least two signals generated from changes in capacitance in at least two electrodes spaced apart from one another by a predetermined distance or greater, from among the plurality of electrodes, wherein, when the levels of the at least two signals are greater than the predetermined reference levels, the plurality of changes in capacitance are determined to be generated due to noise.

Abstract translation: 提供了一种触摸感测装置和方法。 触摸感测装置包括感测电路单元，其从设置在面板单元中的多个电极中产生的电容的多个变化中检测多个信号; 以及信号处理单元，与所述多个电极中的至少两个彼此间隔开预定距离或更大的至少两个电极中的电容变化产生的至少两个信号的电平与预定参考电平进行比较，其中，当 至少两个信号的电平大于预定的参考电平，由于噪声，电容的多个变化被确定为产生。

公开(公告)号：US08300717B2

公开(公告)日：2012-10-30

申请号：US12492282

申请日：2009-06-26

Applicant: Jung Eun Youm ,  Hyung Jin Choi ,  Jung Soo Han ,  Kyung Hoon Won ,  Hyun Suk Lee ,  Jae Goon Aum

Inventor： Jung Eun Youm ,  Hyung Jin Choi ,  Jung Soo Han ,  Kyung Hoon Won ,  Hyun Suk Lee ,  Jae Goon Aum

IPC: H04K1/10

CPC classification number: H04L27/2657 ,  H04L5/0007 ,  H04L5/0048 ,  H04L25/0232 ,  H04L27/261 ,  H04L27/2675

Abstract: A sampling frequency offset estimation apparatus of an orthogonal frequency division multiplexing (OFDM) system includes a first differential operation unit performing complex conjugate multiplication of scattered pilots of complex symbols subjected to a fast Fourier transform (FFT) in an OFDM receiver, an interpolation unit repeating an operation of obtaining a median complex symbol between two consecutive symbols among complex symbols having first phase difference information from the first differential operation unit by a predetermined number, a second differential operation unit performing complex conjugate multiplication of two consecutive median complex symbols among median complex symbols from the interpolation unit, and a sampling frequency offset estimation unit estimating sampling frequency offset using complex symbols having second phase difference information from the second differential operation unit.

Abstract translation: 正交频分复用（OFDM）系统的采样频率偏移估计装置包括：在OFDM接收机中进行快速傅里叶变换（FFT）的复数符号的散射导频的复共轭乘法的第一差分运算单元，重复 在具有来自第一差分运算单元的第一相位差信息的复数符号中获得两个连续符号之间的中间复合符号预定数的操作;第二差分运算单元，执行中间复合符号中的两个连续中值复数符号的复共轭乘法 以及采样频率偏移估计单元，使用具有来自第二差分运算单元的第二相位差信息的复数符号来估计采样频率偏移。

公开(公告)号：US08054488B2

公开(公告)日：2011-11-08

申请号：US11487987

申请日：2006-07-18

Applicant: Hyun-suk Lee

Inventor： Hyun-suk Lee

IPC: G06F3/12 ,  G06F3/00 ,  G06F13/28 ,  G06F13/42 ,  H04N1/40 ,  H04N1/04

CPC classification number: H04N1/00217 ,  G06F21/608 ,  G06K15/00 ,  G06K15/1811 ,  H04L63/083 ,  H04N1/32122 ,  H04N2201/0094 ,  H04N2201/3202 ,  H04N2201/3205 ,  H04N2201/3207 ,  H04N2201/3214 ,  H04N2201/3216 ,  H04N2201/3226 ,  H04N2201/3274

Abstract: An image forming apparatus to supply a file transmission and reception list, and a control method thereof. The image forming apparatus may include a storing part and a controlling part to store a list of transmission and reception for transmitted and received files using an FTP (File Transfer Protocol). The file transmission and reception list may include a user name, a date of file transmission and reception, a file name, a file size, an address of a file transmitter recipient, and a user ID or password to log in an FTP server transmitting and receiving the file through the image forming apparatus.

Abstract translation: 提供文件发送和接收列表的图像形成装置及其控制方法。 图像形成装置可以包括存储部分和控制部分，以使用FTP（文件传输协议）来存储发送和接收文件的发送和接收列表。 文件发送和接收列表可以包括用户名，文件发送和接收日期，文件名，文件大小，文件发送者接收者的地址以及用于登录FTP服务器发送和接收的用户ID或密码 通过图像形成装置接收文件。

公开(公告)号：US07759159B2

公开(公告)日：2010-07-20

申请号：US11848379

申请日：2007-08-31

Applicant: Gyu-Hwan Oh ,  Shin-Jae Kang ,  In-Sun Park ,  Hyun-Seok Lim ,  Nak-Hyun Lim ,  Hyun-Suk Lee

Inventor： Gyu-Hwan Oh ,  Shin-Jae Kang ,  In-Sun Park ,  Hyun-Seok Lim ,  Nak-Hyun Lim ,  Hyun-Suk Lee

IPC: H01L21/00 ,  H01L21/20 ,  H01L47/00 ,  H01L21/02

CPC classification number: H01L45/06 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.

Abstract translation: 公开了制造集成电路存储单元和集成电路存储单元的方法。 可以通过在导电结构的上表面上形成欧姆层并沿着绝缘层中的开口的侧壁的至少一部分远离结构延伸来制造集成电路存储单元。 在欧姆层上形成电极层。 在绝缘层上形成可变电阻率材料并与电极层电连接。

公开(公告)号：US20090273659A1

公开(公告)日：2009-11-05

申请号：US12341285

申请日：2008-12-22

Applicant: Hyun-Suk LEE ,  An-Na CHOI ,  Jin-Ho SON ,  Sun-Ju LEE ,  Jae-Do KWAK ,  Jong-Keun YOUN

Inventor： Hyun-Suk LEE ,  An-Na CHOI ,  Jin-Ho SON ,  Sun-Ju LEE ,  Jae-Do KWAK ,  Jong-Keun YOUN

IPC: H04N7/14 ,  H04M1/00

CPC classification number: H04N7/147 ,  G10L15/26

Abstract: A mobile terminal including an input unit configured to receive an instruction from a first user to perform a video call communication with at least a second user, a display unit, a voice recognition module configured to recognize input voice statements conducted during the video call communication between the first and second users, and a controller configured to perform the video call communication between the first and second users based on the instruction from the first user, to control the display unit to display images of the first and second users, to detect a voice statement from the first user designating the second user by examining the voice statements recognized by the voice recognition module, and to emphatically display the image of the second user compared with the image of the first user based on the detected voice statement from the first user.

Abstract translation: 一种移动终端，包括被配置为从第一用户接收指令以执行与至少第二用户的视频呼叫通信的输入单元，显示单元，语音识别模块，被配置为识别在视频通话通信期间进行的输入语音语句 第一用户和第二用户，以及控制器，被配置为基于来自第一用户的指令执行第一和第二用户之间的视频呼叫通信，以控制显示单元显示第一和第二用户的图像，以检测语音 通过检查由语音识别模块识别的语音语句，从第一用户指定第二用户的语句，并且基于来自第一用户的检测到的语音语句，强调显示与第一用户的图像相比的第二用户的图像。

公开(公告)号：US20090168908A1

公开(公告)日：2009-07-02

申请号：US12193494

申请日：2008-08-18

Applicant: Hyun Suk LEE ,  Se Bin Im ,  Je Hyuk Ryu ,  Jae Goon Aum ,  Jung Tae Kim ,  Hyung Jin Choi

Inventor： Hyun Suk LEE ,  Se Bin Im ,  Je Hyuk Ryu ,  Jae Goon Aum ,  Jung Tae Kim ,  Hyung Jin Choi

IPC: H04L27/28

CPC classification number: H04L25/022 ,  H04L25/0212 ,  H04L25/023 ,  H04L27/2647

Abstract: Provided is an apparatus for estimating a delay spread of a multi-path fading channel in an Orthogonal Frequency Division Multiplexing (OFDM) system. The apparatus is applied to an OFDM receiver including a channel equalization unit compensating channel distortion by estimating channel distortion at pilot locations with respect to output signals of an FFT unit.

Abstract translation: 提供了一种用于估计正交频分复用（OFDM）系统中的多径衰落信道的延迟扩展的装置。 该装置被应用于包括信道均衡单元的OFDM接收机，该OFDM接收机通过估计导频位置处相对于FFT单元的输出信号的信道失真来补偿信道失真。

公开(公告)号：US20090098733A1

公开(公告)日：2009-04-16

申请号：US12100374

申请日：2008-04-09

Applicant: Hyun-Suk Lee ,  Hyun-Young Kim ,  Kwang-Jin Moon

Inventor： Hyun-Suk Lee ,  Hyun-Young Kim ,  Kwang-Jin Moon

IPC: H01L21/285

CPC classification number: H01L21/76846 ,  C23C16/14 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/28556 ,  H01L21/76843

Abstract: A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined time, thereby forming a first metal layer on the semiconductor substrate, using a plasma enhanced chemical vapor deposition (PECVD) method. The hydrogen gas and metal chloride gases are thereafter alternately supplied for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method. Deterioration of semiconductor devices due to high heat by a conventional CVD method can be prevented using a PECVD method as a low temperature process, thereby improving a production yield.

Abstract translation: 在半导体器件的导电区域上形成金属层的方法包括：将包含氢气和金属氯化物复合气体的混合气体以及吹扫气体同时供给到具有密封空间的室中预定时间，从而形成 使用等离子体增强化学气相沉积（PECVD）方法在半导体衬底上的第一金属层。 然后，将氢气和金属氯化物气体交替供给预定时间，同时将净化气体连续地供应到室中，从而使用PECVD方法在第一金属层上形成第二金属层。 使用PECVD法作为低温处理可以防止由于常规CVD法导致的高热导致的半导体器件劣化，从而提高了生产率。

公开(公告)号：US07416981B2

公开(公告)日：2008-08-26

申请号：US11245366

申请日：2005-10-05

Applicant: Hyun-Suk Lee ,  Hyun-Young Kim ,  Kwang-Jin Moon

Inventor： Hyun-Suk Lee ,  Hyun-Young Kim ,  Kwang-Jin Moon

IPC: H01L21/44

CPC classification number: H01L21/76846 ,  C23C16/14 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/28556 ,  H01L21/76843

Abstract: A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined time, thereby forming a first metal layer on the semiconductor substrate, using a plasma enhanced chemical vapor deposition (PECVD) method. The hydrogen gas and metal chloride gases are thereafter alternately supplied for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method. Deterioration of semiconductor devices due to high heat by a conventional CVD method can be prevented using a PECVD method as a low temperature process, thereby improving a production yield.

Abstract translation: 在半导体器件的导电区域上形成金属层的方法包括：将包含氢气和金属氯化物复合气体的混合气体以及吹扫气体同时供给到具有密封空间的室中预定时间，从而形成 使用等离子体增强化学气相沉积（PECVD）方法在半导体衬底上的第一金属层。 然后，将氢气和金属氯化物气体交替供给预定时间，同时将净化气体连续地供应到室中，从而使用PECVD方法在第一金属层上形成第二金属层。 使用PECVD法作为低温处理可以防止由于常规CVD法导致的高热导致的半导体器件劣化，从而提高了生产率。