公开(公告)号：US20120318585A1

公开(公告)日：2012-12-20

申请号：US13223185

申请日：2011-08-31

Applicant: Jae Hun Kim ,  Seul Gi Kim ,  Sang Su Hong ,  Chung Mo Yang ,  In Hyung Lee ,  Woo Jin Lee ,  Young Woo Lee

Inventor： Jae Hun Kim ,  Seul Gi Kim ,  Sang Su Hong ,  Chung Mo Yang ,  In Hyung Lee ,  Woo Jin Lee ,  Young Woo Lee

IPC: G06F3/041 ,  H05K3/10

CPC classification number: H05K3/06 ,  G06F2203/04103 ,  G06F2203/04112 ,  H05K2201/0108 ,  H05K2201/09681 ,  H05K2203/0315 ,  Y10T29/49155

Abstract: Disclosed herein are a touch panel and a method for manufacturing the same. The touch panel includes: a transparent substrate formed of silicon; and sensing electrodes each formed in a metal mesh pattern on one surface or both surfaces of the transparent substrate.Since the transparent substrate is formed of silicon having excellent adhesive property, the sensing electrode can be formed on a transparent substrate even without a separate adhesive material.

Abstract translation: 这里公开了触摸面板及其制造方法。 触摸面板包括：由硅形成的透明基板; 以及在透明基板的一个表面或两个表面上以金属网格图案形成的感测电极。 由于透明基板由具有优异粘合性的硅形成，所以即使没有单独的粘合材料，感测电极也可以形成在透明基板上。

公开(公告)号：US07943858B2

公开(公告)日：2011-05-17

申请号：US12076989

申请日：2008-03-26

Applicant: Seung Eun Lee ,  Yul Kyo Chung ,  Jung Won Lee ,  In Hyung Lee ,  Byung Ik Song

Inventor： Seung Eun Lee ,  Yul Kyo Chung ,  Jung Won Lee ,  In Hyung Lee ,  Byung Ik Song

IPC: H05K1/16

CPC classification number: H05K1/162 ,  H01G4/105 ,  H01G4/33 ,  H05K2201/0175 ,  H05K2201/0179 ,  Y10T29/435

Abstract: There is provided a thin film capacitor and a capacitor-embedded printed board improved in leakage current characteristics. A dielectric layer is formed of a BiZnNb-based amorphous metal oxide with a predetermined dielectric constant without being heat treated at a high temperature, and metallic phase bismuth of the BiZnNb-based amorphous metal oxide is adjusted in content to attain a desired dielectric constant. Also, another dielectric layer having a different content of metallic phase bismuth may be formed. The thin film capacitor including: a first electrode; a dielectric layer including a first dielectric film formed on the first electrode, the dielectric layer comprising a BiZnNb-based amorphous metal oxide; and a second electrode formed on the dielectric layer, wherein the BiZnNb-based amorphous metal oxide contains metallic phase bismuth.

Abstract translation: 提供了薄膜电容器和电容器嵌入式印刷电路板，改善了漏电流特性。 电介质层由具有预定介电常数的BiZnNb基非晶态金属氧化物形成，而不在高温下进行热处理，并且将BiZnNb基非晶态金属氧化物的金属相铋的含量调节到所需的介电常数。 此外，可以形成具有不同金属相铋含量的另一介质层。 所述薄膜电容器包括：第一电极; 介电层，包括形成在所述第一电极上的第一电介质膜，所述电介质层包含BiZnNb基非晶态金属氧化物; 以及形成在所述电介质层上的第二电极，其中所述BiZnNb基非晶态金属氧化物含有金属相铋。

公开(公告)号：US20110062391A1

公开(公告)日：2011-03-17

申请号：US12627312

申请日：2009-11-30

Applicant: Jae IL KIM ,  Suk Jin Ham ,  Dong Hyun Cho ,  In Hyung Lee

Inventor： Jae IL KIM ,  Suk Jin Ham ,  Dong Hyun Cho ,  In Hyung Lee

IPC: H01B1/04

CPC classification number: H01L31/0322 ,  C01G15/00 ,  C01P2002/85 ,  C01P2006/40 ,  Y02E10/541 ,  Y02P70/521

Abstract: The present invention provides a manufacturing method of group III-V compound semiconductor material including a step of making a metal oxide nano-particle of a group III metal element reductively react to a group-V-element-containing compound in order to manufacture compound semiconductor material comprised of two or more element compounds.

Abstract translation: 本发明提供III-V族化合物半导体材料的制造方法，其包括使第III族金属元素的金属氧化物纳米粒子与含V族元素的化合物还原反应以制造化合物半导体 由两种或多种元素化合物组成的材料。

公开(公告)号：US07666631B2

公开(公告)日：2010-02-23

申请号：US10491492

申请日：2002-07-16

Applicant: Joo-Won Suh ,  Young-Yell Yang ,  In-Hyung Lee ,  Dong-Jin Kim ,  Chang-Gu Hyun

Inventor： Joo-Won Suh ,  Young-Yell Yang ,  In-Hyung Lee ,  Dong-Jin Kim ,  Chang-Gu Hyun

IPC: C12P21/04 ,  C12N9/10 ,  C12P21/06 ,  C12N15/00 ,  C12N1/20

CPC classification number: C12N9/1085 ,  C12P13/02 ,  C12P13/08 ,  C12P19/445 ,  C12P19/54 ,  C12P19/56 ,  C12P19/623 ,  C12P29/00 ,  C12Y205/01006

Abstract: Disclosed is an isolated nucleotide sequence encoding an enzyme catalyzing biosynthesis of SAM (SAM-s) and its amino acid sequence. Also, the present invention provides a method for mass production of a useful secondary metabolite including antibiotics using the isolated nucleotide sequence and SAM, where SAM acts as a methyl group donor.

Abstract translation: 公开了编码催化SAM（SAM-s）和其氨基酸序列的生物合成的酶的分离的核苷酸序列。 此外，本发明提供了使用分离的核苷酸序列和SAM（其中SAM用作甲基供体）批量生产含有抗生素的有用次级代谢物的方法。

公开(公告)号：US20090223706A1

公开(公告)日：2009-09-10

申请号：US12466841

申请日：2009-05-15

Applicant: Jung Won LEE ,  Yul Kyo Chung ,  In Hyung Lee

Inventor： Jung Won LEE ,  Yul Kyo Chung ,  In Hyung Lee

IPC: H05K1/16 ,  H01G4/002 ,  H05K3/10

CPC classification number: H05K1/162 ,  H01G4/33 ,  H01G13/00 ,  H01L21/4857 ,  H01L23/50 ,  H01L2924/0002 ,  H05K2201/0108 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2203/016 ,  H05K2203/107 ,  Y10T29/43 ,  Y10T29/49155 ,  Y10T29/49165 ,  H01L2924/00

Abstract: A method for manufacturing a printed circuit board with a capacitor embedded therein which has a dielectric film using laser lift off, and a capacitor manufactured thereby. In the method, a dielectric film is formed on a transparent substrate and heat-treated. A first conductive layer is formed on the heat-treated dielectric film. A laser beam is irradiated onto a stack formed, from below the transparent substrate, to separate the transparent substrate from the stack. After the transparent substrate is separated from the stack, a second conductive layer is formed with a predetermined pattern on the dielectric film. Also, an insulating layer and a third conductive layer are formed on the first and second conductive layers to alternate with each other in a predetermined number.

Abstract translation: 一种制造其中嵌有电容器的印刷电路板的方法，其中具有使用激光剥离的电介质膜，以及由此制造的电容器。 在该方法中，在透明基板上形成电介质膜并进行热处理。 在热处理电介质膜上形成第一导电层。 将激光束照射到从透明基板的下方形成的堆叠上，以将透明基板与堆叠分离。 在将透明基板与堆叠体分离之后，在电介质膜上形成具有预定图案的第二导电层。 此外，绝缘层和第三导电层形成在第一和第二导电层上，以预定数量相互交替。