Thin-film capacitor, laminated structure and methods of manufacturing the same
    4.
    发明申请
    Thin-film capacitor, laminated structure and methods of manufacturing the same 审中-公开
    薄膜电容器,层压结构及其制造方法

    公开(公告)号:US20080307620A1

    公开(公告)日:2008-12-18

    申请号:US12213366

    申请日:2008-06-18

    IPC分类号: H01G4/008 H01G9/04

    摘要: Disclosed are an embedded capacitor and a printed circuit board including the same that can minimize the oxidization of a metal layer. A thin-film capacitor can include a first metal electrode film; a barrier layer, formed on the first metal electrode film to include a conductive oxide; a dielectric film, formed on the barrier layer; and a second metal electrode film, formed on the dielectric film. With the present invention, the outstanding characteristic of a ferroelectric thin film can be provided by minimizing the oxidization of a copper film in the heat treatment after forming the ferroelectric thin film on the copper film.

    摘要翻译: 公开了一种嵌入式电容器和包括能够最小化金属层的氧化的印刷电​​路板。 薄膜电容器可以包括第一金属电极膜; 阻挡层,形成在所述第一金属电极膜上,以包括导电氧化物; 形成在阻挡层上的电介质膜; 以及形成在电介质膜上的第二金属电极膜。 通过本发明,可以通过在铜膜上形成铁电薄膜后的热处理中使铜膜的氧化最小化来提供铁电薄膜的突出特性。