Abstract:
A memory system has first and second primary memories and first and second secondary memories coupled to the first and second primary memories, respectively, the coupling comprising at least one point-to-point connection. A memory module includes at least two of the first and second primary and first and second secondary memories. A first connection element, such as a connector or solder, connects the memory module to a mother board. A second connection element, such as a connector or solder, connects at least one other of the first and second primary and first and second secondary memories to the mother board. At least one of the memories on the first memory module is coupled to at least one of the other memories. The memory system also includes a memory controller which is connected to the primary memories by a point-to-two-point link.
Abstract:
A semiconductor memory device includes memory modules which have memories and a data bus which transfers data to the memory modules, in which the data bus comprises a low frequency band data pass unit which removes the high frequency component of the data and sends the data to the memory modules. The low frequency band data pass unit comprises a plurality of stubs which are connected to the data bus in parallel and are formed as printed circuit board (PCB) patterns. The low frequency band data pass unit comprises a plurality of plates that are connected to the data bus in parallel and are formed as PCB patterns. The low frequency band data pass unit has a shape in which parts having a wide width and parts having a narrow width are alternately connected. Therefore, without adding a separate passive device, the semiconductor memory device reduces the high frequency noise of data transferred through a data bus such that the voltage margin of the data improves, the cost for passive devices such as capacitors, is reduced, and the process for attaching the passive devices is simplified.
Abstract:
A memory system is disclosed with first, second, and third connectors located on a system board, the third connector including pins connected to the pins of the first and second connectors through channels, and a memory controller connected to the pins of the third connector through channels. The memory system, as configured in a first memory capacity, comprises; dummy memory modules and a first memory module connected to the memory controller by installing the dummy memory modules in the first and second connectors and installing the first memory module in the third connector. The memory system, as alternately configured in a second memory capacity larger than the first memory capacity, comprises second memory modules connected to the memory controller by installing the second memory modules in only the first and second connectors.
Abstract:
In the memory module, a buffer is disposed on one of at least two circuit boards in the memory module. The buffer is for buffering signals for memory chips on at least two circuit boards in the memory module.
Abstract:
An impedance adjustment circuit for controlling an impedance of a variable impedance circuit includes a calibration circuit including a replica of the variable impedance circuit and configured to generate an impedance control signal for the variable impedance circuit based on a voltage generated at the replica of the variable impedance circuit in response to a reference current. The calibration circuit may be configured to generate the reference current based on a reference resistor coupled thereto. In particular, the calibration circuit may be configured to match a current in the replica of the variable impedance circuit and a current in the reference resistor to generate the voltage at the replica of the variable impedance circuit.
Abstract:
The present invention relates to norbornene monomers with a novel functional group containing an organometal as shown in the following Formula (I) or (II), a photoresist containing its polymers, manufacturing method thereof, and a method of forming photoresist patterns. Unlike existing polymers for photoresist matrix, polymers made by norbornene monomers described in the present invention is a chemical amplification type induced by photosensitive acids and can result in difference in silicon content between the exposed area and unexposed area due to dissociation of side chain containing silicon. The difference in the silicon content results in different etch rate with respect to oxygen plasma which makes dry developing possible.
Abstract:
Method and apparatus for processing multimedia data received via different networks by synchronizing time stamps of video frames of multimedia data received via the different networks using time codes in the multimedia data.
Abstract:
The present invention pertains to a razor, which includes: a gripping section combined with a housing; a head section coupled at one side of the housing; a razor blade cartridge mounted at a front surface of an upper end of the head section; and an eccentric cam module, which moves the razor blade cartridge to reciprocate in a cutting direction.
Abstract:
Provided are a method and apparatus for inputting handwriting in a digital electronic apparatus. Various patterns defining methods of generating pressure information according to handwriting input are stored in advance, and a user selects a pattern similar to a pattern of the user or selects a desired handwriting pattern to perform the handwriting, so that pressure information is generated according to the handwriting pattern and the handwriting is displaying with a thickness corresponding to the pressure information. Therefore, it is possible to solve a problem of monotonous handwriting input in the related art where only the position is input and the handwriting is output with the same thickness.
Abstract:
Disclosed is a thermosetting resin composition including a thermosetting aromatic oligomer represented by the following Chemical Formula 1, a hollow particle, and solvent, and a board comprising the same. In the above Chemical Formula 1, wherein B, L1, L2, Z1 and Z2 are the same as in defined in the specification.