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    Thermosetting resin, composition including the same, and printed board fabricated using the same
    7.
    发明授权
    Thermosetting resin, composition including the same, and printed board fabricated using the same 有权
    热固性树脂，包含其的组合物和使用其制造的印刷电路板

    公开(公告)号：US08552123B2

    公开(公告)日：2013-10-08

    申请号：US12859425

    申请日：2010-08-19

    申请人： Jae-Jun Lee ,  Myung-Sup Jung

    发明人： Jae-Jun Lee ,  Myung-Sup Jung

    IPC分类号： C08G63/00

    CPC分类号： C09K19/3809 ,  C08G61/02 ,  C08G65/38 ,  C08G65/44 ,  C08G2261/3424 ,  C08G2261/76 ,  C08J5/24 ,  C08J2300/24 ,  H05K1/0326 ,  H05K1/0366 ,  H05K1/0393 ,  Y10T428/31681

    摘要： A thermosetting resin including at least one repeating unit represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, A is derived from a phenolic moiety, an anilinic moiety, or a combination thereof, L is C(O)O, C(O)NR′ wherein R′ is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C6 to C30 aryloxy group, an aromatic ester, an aromatic ester-imide, an aromatic ester-amide, an aromatic amide, or a combination thereof, Z is a substituted or unsubstituted aliphatic group including a double bond or a triple bond, a substituted or unsubstituted alicyclic group including a double bond or a triple bond, a substituted or unsubstituted aryl group including a double bond or a triple bond, (iso)cyanate, a derivative thereof, or a combination thereof, and n is an integer ranging from 1 to about 4.

    摘要翻译： 一种热固性树脂，其包含至少一种由以下化学式1表示的重复单元：其中，在化学式1中，A衍生自酚部分，苯胺部分或其组合，L为C（O）O，C （O）NR'，其中R'是氢，取代或未取代的C 1至C 20烷基，取代或未取代的C 6至C 30芳基，或取代或未取代的C 6至C 30芳氧基，芳族酯，芳族酯 - 酰亚胺，芳香族酯 - 酰胺，芳香族酰胺或其组合，Z为取代或未取代的包含双键或三键的脂族基团，取代或未取代的包含双键或三键的脂环族基团， 取代或未取代的包括双键或三键的芳基，（iso）氰酸酯，其衍生物或其组合，n是1至约4的整数。

    Semiconductor memory device and semiconductor memory system for compensating crosstalk
    9.
    发明授权
    Semiconductor memory device and semiconductor memory system for compensating crosstalk 失效
    用于补偿串扰的半导体存储器件和半导体存储器系统

    公开(公告)号：US08036051B2

    公开(公告)日：2011-10-11

    申请号：US12355421

    申请日：2009-01-16

    申请人： Sung-Joo Park ,  Jae-Jun Lee

    发明人： Sung-Joo Park ,  Jae-Jun Lee

    IPC分类号： G11C7/00

    CPC分类号： G11C7/02 ,  G11C7/1048 ,  G11C7/12 ,  G11C29/02 ,  G11C29/025

    摘要： A semiconductor memory device and a semiconductor memory system. The semiconductor memory device includes channels configured to transmit signals from a transmitter to a receiver, and a crosstalk compensator. The crosstalk compensator may be connected between the channels to compensate for crosstalk. The crosstalk compensator may comprise a capacitor connected in parallel between the channels, and a switching unit connected between the capacitor and one of the channels. The switching unit may control connections or disconnections between the capacitor and the channel. Therefore, the semiconductor memory device and the semiconductor memory system compensate for crosstalk occurring between transmitted signals that are out of phase with each other.

    摘要翻译： 半导体存储器件和半导体存储器系统。 半导体存储器件包括被配置为将信号从发送器发送到接收器的通道和串扰补偿器。 串扰补偿器可以连接在通道之间以补偿串扰。 串扰补偿器可以包括在通道之间并联连接的电容器，以及连接在电容器和其中一个通道之间的开关单元。 开关单元可以控制电容器和通道之间的连接或断开。 因此，半导体存储器件和半导体存储器系统补偿在彼此不同相位的发射信号之间发生的串扰。