公开(公告)号：US20110012464A1

公开(公告)日：2011-01-20

申请号：US12620748

申请日：2009-11-18

申请人： Chang Ha Lee ,  Jeong Hee Park ,  Yong Sun Park ,  Hyuck Roul Kwon ,  Jung Pyo Hong ,  Sung Il Kim ,  Tae Geun Lee

发明人： Chang Ha Lee ,  Jeong Hee Park ,  Yong Sun Park ,  Hyuck Roul Kwon ,  Jung Pyo Hong ,  Sung Il Kim ,  Tae Geun Lee

IPC分类号： H02K1/27

CPC分类号： H02K1/276

摘要： The present invention provides a rotor for an interior permanent magnet synchronous motor for driving an air blower, in which the structure of the rotor is suitably modified to reduce magnetic flux leakage and, at the same time, maximize saliency ratio, thus improving the performance of the motor.

摘要翻译： 本发明提供一种用于驱动鼓风机的内部永磁同步电动机的转子，其中适当地改变转子的结构以减小磁通泄漏，同时最大化显着比，从而提高转子的性能 电机。

公开(公告)号：US20110011041A1

公开(公告)日：2011-01-20

申请号：US12716165

申请日：2010-03-02

申请人： Hyung Seong Bae ,  Jeong Hee Park

发明人： Hyung Seong Bae ,  Jeong Hee Park

IPC分类号： B01D50/00

CPC分类号： B04C9/00 ,  B01D46/14 ,  B01D50/002 ,  B04C5/22 ,  B04C2009/004 ,  B04C2009/007

摘要： A vacuum cyclone dust collector according to the present invention comprises an upper housing through which an absorption hole and a discharging hole are formed and inside which air is inputted and discharged, a lower housing which induces air, which is inputted inside the upper housing through the absorption hole, to be circulated and is connected detachably to the lower part of the upper housing, and air refining part which is arranged rotatably to the upper part of the upper housing with keeping a vacuum state and allows air being inputted through the absorption hole to be circulated inside the upper housing and the lower housing and fine dust and impurities contained in air being inputted through the absorption hole to be dropped downward and refined air without fine dust and impurities to be discharged through the discharging hole.

摘要翻译： 根据本发明的真空旋风除尘器包括：上壳体，通过该上壳体形成吸收孔和排出孔，并且在其内部输入和排出空气;下壳体，其引入空气，所述下壳体通过所述上壳体输入到所述上壳体内; 吸收孔被可分离地连接到上壳体的下部，空气精炼部分保持真空状态可旋转地布置在上壳体的上部并允许空气通过吸收孔输入到 在上壳体和下壳体内循环，并且通过吸收孔输入的空气中含有的微细灰尘和杂质向下落下，精细空气没有细小的灰尘和杂质通过排出孔排出。

公开(公告)号：US20100176365A1

公开(公告)日：2010-07-15

申请号：US12684140

申请日：2010-01-08

申请人： Hyeyoung Park ,  Hyun Suk Kwon ,  Jin Ho Oh ,  Yong Ho Ha ,  Jeong Hee Park

发明人： Hyeyoung Park ,  Hyun Suk Kwon ,  Jin Ho Oh ,  Yong Ho Ha ,  Jeong Hee Park

IPC分类号： H01L45/00 ,  H01L29/18 ,  H01L21/02

CPC分类号： H01L45/06 ,  G11C13/0004 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/124 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691

摘要： A resistance variable memory device includes at least one bottom electrode, a first insulating layer containing a trench which exposes the at least one bottom electrode, and a resistance variable material layer including respective first and second portions located on opposite sidewalls of the trench, respectively, where the first and second portions of the resistance variable material layer are electrically connected to the at least one bottom electrode. The device further includes a protective layer covering the resistance variable material layer within the trench, and a second insulating layer located within the trench and covering the protective layer within the trench

摘要翻译： 电阻可变存储器件包括至少一个底部电极，包含暴露至少一个底部电极的沟槽的第一绝缘层，以及包括分别位于沟槽的相对侧壁上的各自的第一和第二部分的电阻可变材料层， 其中电阻可变材料层的第一和第二部分电连接到至少一个底部电极。 该装置还包括覆盖沟槽内的电阻可变材料层的保护层和位于沟槽内并覆盖沟槽内的保护层的第二绝缘层

公开(公告)号：US20060040485A1

公开(公告)日：2006-02-23

申请号：US11201421

申请日：2005-08-11

申请人： Jang-Eun Lee ,  Sung-Lae Cho ,  Jeong-Hee Park

发明人： Jang-Eun Lee ,  Sung-Lae Cho ,  Jeong-Hee Park

IPC分类号： H01L21/44

CPC分类号： H01L21/76877 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1683

摘要： Provided are methods for forming conductive plug structures, such as via plugs, from a plurality of conductive layer patterns and methods of fabricating semiconductor devices, including semiconductor memory devices such as phase change semiconductor memory devices. An example method forms a small via structure by forming a conductive layer on a semiconductor substrate. A molding insulating layer is formed on the conductive layer and a via hole is formed through the insulating layer to expose a region of the conductive layer. A first via filling layer is formed and then partially removed to form a partial via plug. The formation and removal of the phase change material layer are then repeated as necessary to form a multilayer plug structure that substantially fills the via hole with the multilayer structure typically exhibiting reduced defects and damage than plug structures prepared by conventional methods.

公开(公告)号：US20050002227A1

公开(公告)日：2005-01-06

申请号：US10910945

申请日：2004-08-04

申请人： Horii Hideki ,  Bong-Jin Kuh ,  Yong-Ho Ha ,  Jeong-hee Park ,  Ji-Hye Yi

发明人： Horii Hideki ,  Bong-Jin Kuh ,  Yong-Ho Ha ,  Jeong-hee Park ,  Ji-Hye Yi

IPC分类号： G11C16/02 ,  H01L27/24 ,  H01L45/00 ,  G11C11/00

CPC分类号： H01L45/143 ,  G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

摘要： Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that may include nitrogen atoms and/or silicon atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystalline structure.

摘要翻译： 提供了可相变存储器件和制造可相变存储器件的方法，其包括可包括氮原子和/或硅原子的相变材料的相变材料图案。 第一和第二电极电连接到相变材料图案并向其提供电信号。 相变材料图案可以具有多晶结构。

公开(公告)号：US20150325787A1

公开(公告)日：2015-11-12

申请号：US14599848

申请日：2015-01-19

申请人： Jun-Ku AHN ,  Jeong-Hee PARK

发明人： Jun-Ku AHN ,  Jeong-Hee PARK

IPC分类号： H01L45/00

CPC分类号： H01L45/1683 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1666

摘要： Example methods of filling an opening and of manufacturing a phase change memory device are disclosed. In an example method, an insulation layer having an opening is formed on a substrate. A material layer is formed on the insulation layer. The material layer fills the opening, and has a void. A first laser beam is irradiated onto the material layer, thereby removing the void or reducing a size of the void. The first laser beam is generated from a solid state laser medium.

摘要翻译： 公开了填充开口和制造相变存储器件的示例性方法。 在示例性方法中，在基板上形成具有开口的绝缘层。 在绝缘层上形成材料层。 材料层填充开口，并具有空隙。 将第一激光束照射到材料层上，从而去除空隙或减小空隙的尺寸。 第一激光束由固态激光介质产生。

公开(公告)号：US08735215B2

公开(公告)日：2014-05-27

申请号：US13242237

申请日：2011-09-23

申请人： Jeong-Hee Park ,  Man-Sug Kang ,  Hideki Horii ,  Hyo-Jung Kim ,  Jung-Hwan Park

发明人： Jeong-Hee Park ,  Man-Sug Kang ,  Hideki Horii ,  Hyo-Jung Kim ,  Jung-Hwan Park

IPC分类号： H01L21/06 ,  H01L45/00

CPC分类号： H01L45/06 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/14 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1658 ,  H01L45/1683

摘要： An example embodiment relates to a method including forming a bottom electrode and an insulating layer on a substrate, the insulating layer defining a first opening that exposes a portion of the bottom electrode. The method includes forming a variable resistance material pattern, including a plurality of elements, to fill the first opening. The variable resistance material pattern may be doped with a dopant that includes at least one of the plurality of elements in the variable resistance material pattern. The method includes forming a top electrode on the variable resistance material pattern.

摘要翻译： 示例性实施例涉及包括在基底上形成底部电极和绝缘层的方法，所述绝缘层限定暴露所述底部电极的一部分的第一开口。 该方法包括形成包括多个元件的可变电阻材料图案以填充第一开口。 可变电阻材料图案可以掺杂有包括可变电阻材料图案中的多个元件中的至少一个的掺杂剂。 该方法包括在可变电阻材料图案上形成顶部电极。

公开(公告)号：US08089190B2

公开(公告)日：2012-01-03

申请号：US12620748

申请日：2009-11-18

申请人： Chang Ha Lee ,  Jeong Hee Park ,  Yong Sun Park ,  Hyuck Roul Kwon ,  Jung Pyo Hong ,  Sung Il Kim ,  Tae Geun Lee

发明人： Chang Ha Lee ,  Jeong Hee Park ,  Yong Sun Park ,  Hyuck Roul Kwon ,  Jung Pyo Hong ,  Sung Il Kim ,  Tae Geun Lee

IPC分类号： H02K21/12

CPC分类号： H02K1/276

摘要： The present invention provides a rotor for an interior permanent magnet synchronous motor for driving an air blower, in which the structure of the rotor is suitably modified to reduce magnetic flux leakage and, at the same time, maximize saliency ratio, thus improving the performance of the motor.

摘要翻译： 本发明提供一种用于驱动鼓风机的内部永磁同步电动机的转子，其中适当地改变转子的结构以减小磁通泄漏，同时最大化显着比，从而提高转子的性能 电机。

公开(公告)号：US20110312126A1

公开(公告)日：2011-12-22

申请号：US13084647

申请日：2011-04-12

申请人： Byoung-Jae BAE ,  Byoung-Deog CHOI ,  Jeong-Hee PARK ,  Young-Kuk KIM ,  Jin-Ho OH

发明人： Byoung-Jae BAE ,  Byoung-Deog CHOI ,  Jeong-Hee PARK ,  Young-Kuk KIM ,  Jin-Ho OH

IPC分类号： H01L21/06 ,  H01L21/02

CPC分类号： H01L45/16 ,  G11C13/0004 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/141

摘要： A method of fabricating a phase-change semiconductor memory device includes a plasma treatment of an electrode connected to a phase-change material pattern after a conductive layer used to form the electrode has been planarized in the presence of an oxidizing agent. The plasma is formed from a plasma gas having a molecular weight of 17 or less.

摘要翻译： 制造相变半导体存储器件的方法包括在用于形成电极的导电层在氧化剂存在下被平坦化之后，连接到相变材料图案的电极的等离子体处理。 等离子体由分子量为17以下的等离子体气体形成。

公开(公告)号：US20100019216A1

公开(公告)日：2010-01-28

申请号：US12568402

申请日：2009-09-28

申请人： Jeong-Hee Park ,  Ju-Chul Park ,  Jun-Soo Bae ,  Bong-Jin Kuh ,  Yong-Ho Ha

发明人： Jeong-Hee Park ,  Ju-Chul Park ,  Jun-Soo Bae ,  Bong-Jin Kuh ,  Yong-Ho Ha

IPC分类号： H01L47/00

CPC分类号： H01L45/06 ,  G11C13/0004 ,  G11C2213/79 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

摘要： A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.

摘要翻译： 可变相存储器件包括相变材料图案，以及电连接到相变材料图案的第一和第二电极。 第一和第二电极被配置为向相变材料图案提供电信号。 相变材料图案包括第一相变材料层和第二相变材料层。 第一和第二可相变材料图案具有不同的化学，物理和/或电特性。 例如，第二相变材料层可以具有比第一相变材料层更大的电阻率。 例如，第一相变材料层可以包括第一浓度的氮，第二相变材料层可以包括大于第一浓度的第二浓度的氮。 还讨论了相关设备和制造方法。