APPARATUS WITH ELECTRIC ELEMENT SOURCED BY A CAPACITIVE CERAMIC-BASED ELECTRICAL ENERGY STORAGE UNIT (EESU) WITH STORAGE CHARGING FROM ON-BOARD ELECTRICAL ENERGY GENERATION AND EXTERNAL INTERFACE
    31.
    发明申请
    APPARATUS WITH ELECTRIC ELEMENT SOURCED BY A CAPACITIVE CERAMIC-BASED ELECTRICAL ENERGY STORAGE UNIT (EESU) WITH STORAGE CHARGING FROM ON-BOARD ELECTRICAL ENERGY GENERATION AND EXTERNAL INTERFACE 审中-公开
    具有电容元件的设备由电容式陶瓷电力储存单元(EESU)采用电子式电能生成和外部接口存储充电

    公开(公告)号:US20110080134A1

    公开(公告)日:2011-04-07

    申请号:US12895800

    申请日:2010-09-30

    申请人: John Boyd Miller

    发明人: John Boyd Miller

    IPC分类号: H01M10/46 H02J7/00

    CPC分类号: H02J7/345

    摘要: Within an apparatus (20), a power storage unit comprising a capacitive ceramic-based electrical energy storage unit (EESU) (100) is capable of supplying electrical energy to an electrical energy using element (30) such as a light, a display, an electrical or electronic component or circuit, a motor, or an electro-mechanical component. The EESU (100) power storage unit in the apparatus is rechargeable and an EESU charging interface (110) is capable of charging the EESU (100) with electrical energy from either an external power interface (114) or one or more on-board electrical energy sources (140).

    摘要翻译: 在设备(20)内,包括基于电容性陶瓷的电能存储单元(EESU)(100))的电力存储单元能够使用诸如光,显示器等的元件(30)向电能提供电能, 电气或电子部件或电路,电动机或机电部件。 设备中的EESU(100)电力存储单元是可再充电的,并且EESU充电接口(110)能够利用来自外部电力接口(114)或一个或多个车载电气的电能来对EESU(100)充电 能源(140)。

    Method for electroless depositing a material on a surface of a wafer
    32.
    发明授权
    Method for electroless depositing a material on a surface of a wafer 有权
    在晶片的表面上无电沉积材料的方法

    公开(公告)号:US07875554B2

    公开(公告)日:2011-01-25

    申请号:US12044537

    申请日:2008-03-07

    IPC分类号: H01L21/44

    摘要: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

    摘要翻译: 概括地说,提供了一种在半导体晶片(“晶片”)上沉积材料的方法和装置。 更具体地,该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此,通过化学镀反应将材料沉积在晶片表面上,该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

    Methods and systems for low interfacial oxide contact between barrier and copper metallization
    33.
    发明授权
    Methods and systems for low interfacial oxide contact between barrier and copper metallization 有权
    屏障和铜金属化之间的低界面氧化物接触的方法和系统

    公开(公告)号:US07749893B2

    公开(公告)日:2010-07-06

    申请号:US11641361

    申请日:2006-12-18

    IPC分类号: H01L21/4763

    摘要: The present invention relates to methods and systems for the metallization of semiconductor devices. One aspect of the present invention is a method of depositing a copper layer onto a barrier layer so as to produce a substantially oxygen free interface therebetween. In one embodiment, the method includes providing a substantially oxide free surface of the barrier layer. The method also includes depositing an amount of atomic layer deposition (ALD) copper on the oxide free surface of the barrier layer effective to prevent oxidation of the barrier layer. The method further includes depositing a gapfill copper layer over the ALD copper. Another aspect of the present invention is a system for depositing a copper layer onto barrier layer so as to produce a substantially oxygen-free interface therebetween. In one embodiment, the integrated system includes at least one barrier deposition module. The system also includes an ALD copper deposition module configured to deposit copper by atomic layer deposition. The system further includes a copper gapfill module and at least one transfer module coupled to the at least one barrier deposition module and to the ALD copper deposition module. The transfer module is configured so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.

    摘要翻译: 本发明涉及用于半导体器件金属化的方法和系统。 本发明的一个方面是将铜层沉积在阻挡层上以在其间产生基本上无氧的界面的方法。 在一个实施例中,该方法包括提供阻挡层的基本上无氧化物的表面。 该方法还包括在阻挡层的无氧化物表面上沉积一定量的原子层沉积(ALD)铜,以有效地防止阻挡层的氧化。 该方法还包括在ALD铜上沉积间隙填充铜层。 本发明的另一方面是一种用于在阻挡层上沉积铜层以在其间产生基本上无氧的界面的系统。 在一个实施例中,集成系统包括至少一个阻挡层沉积模块。 该系统还包括配置为通过原子层沉积沉积铜的ALD铜沉积模块。 该系统还包括铜间隙填充模块和耦合到至少一个阻挡层沉积模块和ALD铜沉积模块的至少一个传输模块。 转移模块被配置为使得基板可以在基本上不暴露于氧化物形成环境的基础之间传递。

    ELECTRONIC ENGINE SPEED CONTROL SYSTEM FOR GRASS MOWING MACHINE
    34.
    发明申请
    ELECTRONIC ENGINE SPEED CONTROL SYSTEM FOR GRASS MOWING MACHINE 有权
    电动发动机速度控制系统

    公开(公告)号:US20090235627A1

    公开(公告)日:2009-09-24

    申请号:US12053961

    申请日:2008-03-24

    IPC分类号: A01D41/127 G06F19/00

    摘要: An electronic engine speed control system for a grass mowing machine powered by an internal combustion engine includes a microcontroller providing an output signal to an engine speed actuator for the engine, a pedal position sensor connected to a foot pedal and providing a voltage input signal to the microcontroller based on the position of the foot pedal, a PTO clutch switch providing a signal input to the microcontroller indicating if a PTO clutch is engaged, and a lever position sensor connected to a hand lever and having a range of positions including an Automatic mode position and a plurality of Manual mode positions. The hand lever position sensor provides a voltage input signal to the microcontroller in the Automatic mode position such that the microcontroller output to the engine speed actuator is related to the voltage inputs from the pedal position sensor and PTO clutch switch, and provides a voltage input signal to the microcontroller in a range of Manual mode positions such that the microcontroller output to the engine speed actuator is related to the voltage input from the lever position sensor.

    摘要翻译: 用于由内燃机供电的割草机的电子发动机速度控制系统包括:向发动机的发动机转速致动器提供输出信号的微控制器,连接到脚踏板的踏板位置传感器,并向 微控制器,其基于脚踏板的位置,PTO离合器开关,提供对微控制器的信号输入,指示PTO离合器是否接合;以及杆位置传感器,连接到手柄并具有包括自动模式位置的位置范围 和多个手动模式位置。 手柄位置传感器在自动模式位置向微控制器提供电压输入信号,使得微控制器输出到发动机转速执行器与来自踏板位置传感器和PTO离合器开关的电压输入相关,并提供电压输入信号 在手动模式位置范围内的微控制器,使得微控制器输出到发动机转速致动器与从杆位置传感器输入的电压相关。

    COMPUTER-BASED METHODS FOR ARRANGING MEETINGS AND SYSTEMS FOR PERFORMING THE SAME
    35.
    发明申请
    COMPUTER-BASED METHODS FOR ARRANGING MEETINGS AND SYSTEMS FOR PERFORMING THE SAME 审中-公开
    基于计算机的方法,用于安排会议和执行该会议的系统

    公开(公告)号:US20090222519A1

    公开(公告)日:2009-09-03

    申请号:US12396456

    申请日:2009-03-02

    申请人: John Boyd

    发明人: John Boyd

    IPC分类号: G06F15/16

    CPC分类号: G06Q10/109

    摘要: Methods and systems for assisting individuals arrange meetings such as networking meetings with other individuals at a specified time (or within a specified time range) and at a specified place (or within a specified geographic region). More specifically, methods and systems for allowing individuals to post an invitation to for a meeting on an on-line network.

    摘要翻译: 在指定时间(或指定时间范围内)和指定地点(或指定地理区域内)协助个人安排会议等与其他人进行网络会议的方法和系统。 更具体地,允许个人在在线网络上发布邀请以进行会议的方法和系统。

    Method and apparatus for material deposition in semiconductor fabrication
    37.
    发明授权
    Method and apparatus for material deposition in semiconductor fabrication 有权
    在半导体制造中材料沉积的方法和装置

    公开(公告)号:US07358186B2

    公开(公告)日:2008-04-15

    申请号:US10735216

    申请日:2003-12-12

    IPC分类号: H01L21/44 B05C5/12

    摘要: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

    摘要翻译: 概括地说,提供了一种在半导体晶片(“晶片”)上沉积材料的方法和装置。 更具体地,该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此,通过化学镀反应将材料沉积在晶片表面上,该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

    Electronic advertising device and method of using the same
    38.
    发明申请
    Electronic advertising device and method of using the same 审中-公开
    电子广告装置及其使用方法

    公开(公告)号:US20080077502A1

    公开(公告)日:2008-03-27

    申请号:US11975521

    申请日:2007-10-19

    申请人: John Boyd

    发明人: John Boyd

    IPC分类号: G06Q30/00

    摘要: Electronic advertising devices and methods of using the same for providing targeted advertisements to one or more individuals based on the individual(s) consumer profile(s). The devices or systems include a sensor or receiver for receiving identifying signals from individuals such as signals emitted by cellular telephones. Using information associated with or retrieved using the identifying signal, targeted advertisements are delivered to the individuals.

    摘要翻译: 电子广告设备及其使用方法基于个人消费者简档向一个或多个个人提供有针对性的广告。 设备或系统包括用于从个人接收识别信号的传感器或接收器,例如由蜂窝电话发射的信号。 使用与识别信号相关或检索的信息,将有针对性的广告传送给个人。

    Apparatus and method for confined area planarization
    39.
    发明申请
    Apparatus and method for confined area planarization 有权
    限制区域平面化的装置和方法

    公开(公告)号:US20070227656A1

    公开(公告)日:2007-10-04

    申请号:US11395881

    申请日:2006-03-31

    IPC分类号: H01L21/461 H01L21/306

    CPC分类号: H01L21/32115 C25F7/00

    摘要: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

    摘要翻译: 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力,使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

    Method and Apparatus for Semiconductor Wafer Cleaning Using High-Frequency Acoustic Energy with Supercritical Fluid
    40.
    发明申请
    Method and Apparatus for Semiconductor Wafer Cleaning Using High-Frequency Acoustic Energy with Supercritical Fluid 有权
    使用超临界流体使用高频声能的半导体晶片清洗的方法和装置

    公开(公告)号:US20070119477A1

    公开(公告)日:2007-05-31

    申请号:US11670631

    申请日:2007-02-02

    IPC分类号: B08B3/12 B08B6/00 C23G1/00

    摘要: An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.

    摘要翻译: 提供了一种使用高频声能与超临界流体来执行半导体晶片(“晶片”)清洁工艺的装置和方法。 高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。 通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。 此外,晶片清洗过程受益于近零表面张力,高扩散性,高密度和化学混合能力的超临界流体性质。