公开(公告)号：US20120269987A1

公开(公告)日：2012-10-25

申请号：US13534366

申请日：2012-06-27

申请人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

发明人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

IPC分类号： C23C18/54 ,  C23C16/06 ,  B05D5/12

CPC分类号： H01L21/7685 ,  C23C18/1632 ,  C23C18/1651 ,  C23C18/1844 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76879

摘要： An integrated system for processing a substrate in controlled environment to enable deposition of a thin copper seed layer on a surface of a metallic barrier layer of a copper interconnect is provided. The system includes a lab-ambient transfer chamber, a vacuum transfer chamber, a vacuum process module for cleaning an exposed surface of a metal oxide of a underlying metal, a vacuum process module for depositing the metallic barrier layer, and a controlled-ambient transfer chamber filled with an inert gas, wherein at least one controlled-ambient process module is coupled to the controlled-ambient transfer chamber. In addition, the system includes an electroless copper deposition process module used to deposit the thin layer of copper seed layer on the surface of the metallic barrier layer.

摘要翻译： 提供了一种用于在受控环境中处理衬底以使薄铜种子层在铜互连的金属阻挡层的表面上沉积的集成系统。 该系统包括实验室环境转移室，真空转移室，用于清洁下面金属的金属氧化物的暴露表面的真空处理模块，用于沉积金属阻挡层的真空处理模块和受控环境转移 室内装有惰性气体，其中至少一个受控环境的过程模块耦合到受控环境的传送室。 此外，该系统包括用于在金属阻挡层的表面上沉积铜籽晶层的薄层的无电铜沉积工艺模块。

公开(公告)号：US07875554B2

公开(公告)日：2011-01-25

申请号：US12044537

申请日：2008-03-07

申请人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

发明人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

IPC分类号： H01L21/44

CPC分类号： C23C18/1612 ,  C23C18/14 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1667 ,  C23C18/168 ,  C23C18/31 ,  H01L21/288

摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

摘要翻译： 概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。 更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

公开(公告)号：US07749893B2

公开(公告)日：2010-07-06

申请号：US11641361

申请日：2006-12-18

申请人： Fritz Redeker ,  John Boyd ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

发明人： Fritz Redeker ,  John Boyd ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

IPC分类号： H01L21/4763

CPC分类号： C25D7/123 ,  C23C18/1653 ,  C23C28/023 ,  C23C28/322 ,  C23C28/34 ,  C23C28/341 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to methods and systems for the metallization of semiconductor devices. One aspect of the present invention is a method of depositing a copper layer onto a barrier layer so as to produce a substantially oxygen free interface therebetween. In one embodiment, the method includes providing a substantially oxide free surface of the barrier layer. The method also includes depositing an amount of atomic layer deposition (ALD) copper on the oxide free surface of the barrier layer effective to prevent oxidation of the barrier layer. The method further includes depositing a gapfill copper layer over the ALD copper. Another aspect of the present invention is a system for depositing a copper layer onto barrier layer so as to produce a substantially oxygen-free interface therebetween. In one embodiment, the integrated system includes at least one barrier deposition module. The system also includes an ALD copper deposition module configured to deposit copper by atomic layer deposition. The system further includes a copper gapfill module and at least one transfer module coupled to the at least one barrier deposition module and to the ALD copper deposition module. The transfer module is configured so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.

摘要翻译： 本发明涉及用于半导体器件金属化的方法和系统。 本发明的一个方面是将铜层沉积在阻挡层上以在其间产生基本上无氧的界面的方法。 在一个实施例中，该方法包括提供阻挡层的基本上无氧化物的表面。 该方法还包括在阻挡层的无氧化物表面上沉积一定量的原子层沉积（ALD）铜，以有效地防止阻挡层的氧化。 该方法还包括在ALD铜上沉积间隙填充铜层。 本发明的另一方面是一种用于在阻挡层上沉积铜层以在其间产生基本上无氧的界面的系统。 在一个实施例中，集成系统包括至少一个阻挡层沉积模块。 该系统还包括配置为通过原子层沉积沉积铜的ALD铜沉积模块。 该系统还包括铜间隙填充模块和耦合到至少一个阻挡层沉积模块和ALD铜沉积模块的至少一个传输模块。 转移模块被配置为使得基板可以在基本上不暴露于氧化物形成环境的基础之间传递。

公开(公告)号：US20090222519A1

公开(公告)日：2009-09-03

申请号：US12396456

申请日：2009-03-02

申请人： John Boyd

发明人： John Boyd

IPC分类号： G06F15/16

CPC分类号： G06Q10/109

摘要： Methods and systems for assisting individuals arrange meetings such as networking meetings with other individuals at a specified time (or within a specified time range) and at a specified place (or within a specified geographic region). More specifically, methods and systems for allowing individuals to post an invitation to for a meeting on an on-line network.

摘要翻译： 在指定时间（或指定时间范围内）和指定地点（或指定地理区域内）协助个人安排会议等与其他人进行网络会议的方法和系统。 更具体地，允许个人在在线网络上发布邀请以进行会议的方法和系统。

公开(公告)号：US07358186B2

公开(公告)日：2008-04-15

申请号：US10735216

申请日：2003-12-12

申请人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

发明人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

IPC分类号： H01L21/44 ,  B05C5/12

CPC分类号： C23C18/1612 ,  C23C18/14 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1667 ,  C23C18/168 ,  C23C18/31 ,  H01L21/288

摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

摘要翻译： 概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。 更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

公开(公告)号：US20080077502A1

公开(公告)日：2008-03-27

申请号：US11975521

申请日：2007-10-19

申请人： John Boyd

发明人： John Boyd

IPC分类号： G06Q30/00

CPC分类号： G06Q30/02 ,  G06Q30/0251 ,  G06Q30/0256 ,  G06Q30/0261 ,  G06Q30/0267

摘要： Electronic advertising devices and methods of using the same for providing targeted advertisements to one or more individuals based on the individual(s) consumer profile(s). The devices or systems include a sensor or receiver for receiving identifying signals from individuals such as signals emitted by cellular telephones. Using information associated with or retrieved using the identifying signal, targeted advertisements are delivered to the individuals.

摘要翻译： 电子广告设备及其使用方法基于个人消费者简档向一个或多个个人提供有针对性的广告。 设备或系统包括用于从个人接收识别信号的传感器或接收器，例如由蜂窝电话发射的信号。 使用与识别信号相关或检索的信息，将有针对性的广告传送给个人。

公开(公告)号：US20070227656A1

公开(公告)日：2007-10-04

申请号：US11395881

申请日：2006-03-31

申请人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John Larios

发明人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John Larios

IPC分类号： H01L21/461 ,  H01L21/306

CPC分类号： H01L21/32115 ,  C25F7/00

摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

摘要翻译： 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：US20070119477A1

公开(公告)日：2007-05-31

申请号：US11670631

申请日：2007-02-02

申请人： Fred Redecker ,  John Boyd ,  John Parks

发明人： Fred Redecker ,  John Boyd ,  John Parks

IPC分类号： B08B3/12 ,  B08B6/00 ,  C23G1/00

CPC分类号： B08B3/12 ,  B08B7/0021 ,  H01L21/67057 ,  Y10S134/902

摘要： An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.

摘要翻译： 提供了一种使用高频声能与超临界流体来执行半导体晶片（“晶片”）清洁工艺的装置和方法。 高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。 通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。 此外，晶片清洗过程受益于近零表面张力，高扩散性，高密度和化学混合能力的超临界流体性质。

公开(公告)号：US20070095073A1

公开(公告)日：2007-05-03

申请号：US11393225

申请日：2006-03-30

申请人： Zhuang Tian ,  John Boyd

发明人： Zhuang Tian ,  John Boyd

IPC分类号： F25B9/00 ,  F25B49/00

CPC分类号： F25B49/022 ,  F04B35/045 ,  F04B2201/0206 ,  F25B2400/073

摘要： A free-piston linear compressor (1) controlled to achieve high volumetric efficiency by a controller including an algorithm (116) for ramping up input power until piston-cylinder head collisions are detected using a detection algorithm (117/118) which then decrements power input whereupon input power is again ramped up by algorithm (116). Non-damaging low energy collisions are achieved by the controller including a perturbation algorithm (119) which perturbates the input power ramp with periodic transient pulses of power to ensure piston collisions are provoked during the transient power pulses.

摘要翻译： 一个自由活塞线性压缩机（1）通过控制器实现高体积效率，该控制器包括用于使用检测算法（117/118）来检测使用输入功率升高输入功率的算法（116），该检测算法（117/118）然后减小功率 输入，由此输入功率再次通过算法（116）升高。 控制器实现了非破坏性低能量碰撞，包括扰动算法（119），扰动算法（119）利用周期性的瞬时脉冲功率来扰乱输入功率斜坡，以确保在瞬态功率脉冲期间激活活塞碰撞。

公开(公告)号：US07186629B2

公开(公告)日：2007-03-06

申请号：US10716992

申请日：2003-11-19

申请人： Mark Wesselmann ,  Kostadin Petkov ,  Robert Metter ,  Michael S. Wisnieski ,  John Boyd

发明人： Mark Wesselmann ,  Kostadin Petkov ,  Robert Metter ,  Michael S. Wisnieski ,  John Boyd

IPC分类号： H01L21/46

CPC分类号： B24B37/34 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10T428/31504 ,  Y10T428/31598

摘要： A protective disk for protecting a semiconductor wafer during processing includes an adhesive layer configured to adhere to the semiconductor wafer and a support layer coupled to the adhesive layer configured to provide strength and stiffness to the semiconductor wafer during processing. In one aspect of the invention, the protective disk is soluble in a mildly alkaline or mildly acidic solution. In another aspect, the adhesive layer comprises a high molecular weight polymer. In another aspect, the support layer comprises a polymer and a filler. The present invention may enable a robust, cost-effective, high-volume, automated process for thinning semiconductor wafers below 150 μm, and for subsequent process steps of stress relief and transfer to a dicing frame for die singulation. Additionally, the invention enables use of existing toolsets and processes to produce thinner substrates than conventionally achievable.

摘要翻译： 用于在加工期间保护半导体晶片的保护盘包括被配置为粘附到半导体晶片的粘合剂层和与粘合剂层耦合的支撑层，其被配置为在加工期间为半导体晶片提供强度和刚度。 在本发明的一个方面，保护盘可溶于弱碱性或弱酸性溶液。 另一方面，粘合剂层包含高分子量聚合物。 另一方面，支撑层包括聚合物和填料。 本发明可以实现用于减薄150μm以下的半导体晶片的鲁棒，成本有效，高容量的自动化工艺，以及用于随后的应力释放和转移到切割机用于模切单元的工艺步骤。 另外，本发明能够使用现有的工具集和工艺来生产比常规可实现的更薄的衬底。