公开(公告)号：US08264244B2

公开(公告)日：2012-09-11

申请号：US12703732

申请日：2010-02-10

Applicant: Kun-Chih Lin ,  Wen-Chi Wu

Inventor： Kun-Chih Lin ,  Wen-Chi Wu

IPC: G01R27/26

CPC classification number: H03K17/962 ,  G01D5/24 ,  H03K2217/96074 ,  H03K2217/960745

Abstract: A capacitance difference detecting circuit includes a control circuit, for generating a control signal according to a first voltage and a second voltage; a first capacitor to be detected; a second capacitor to be detected; a first constant capacitor, having a terminal coupled to the first terminal of the first capacitor to be detected and the first input terminal; a second constant capacitor, having a terminal coupled to the first terminal of the second capacitor to be detected and the second input terminal; a voltage control unit, cooperating with the first capacitor to be detected, the second capacitor to be detected, the first constant capacitor and the second constant capacitor to control the first voltage and the second voltage. The voltage control unit is an adjustable capacitor and a capacitance value of the adjustable capacitor is controlled by the control signal.

Abstract translation: 电容差检测电路包括用于根据第一电压和第二电压产生控制信号的控制电路; 要检测的第一电容器; 要检测的第二电容器; 第一恒定电容器，具有耦合到待检测的第一电容器的第一端子和第一输入端子的端子; 第二恒定电容器，具有耦合到待检测的第二电容器的第一端子的端子和第二输入端子; 与待检测的第一电容器，待检测的第二电容器，第一恒定电容器和第二恒定电容器配合的电压控制单元，以控制第一电压和第二电压。 电压控制单元是可调电容器，可调电容器的电容值由控制信号控制。

公开(公告)号：US08178882B2

公开(公告)日：2012-05-15

申请号：US12557131

申请日：2009-09-10

Applicant: Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

Inventor： Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

IPC: H01L29/786

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/2205 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract translation: 用于促进电子迁移率的缓冲层。 缓冲层包括非晶硅层（a-Si）和含氧化物层。 a-Si具有足够高的密度，通过a-Si缓冲层防止衬底中的颗粒扩散到有源层中。 同样，具有导热性的缓冲器为通过受激准分子激光退火（ELA）的无定形有源层重结晶期间的热扩散提供了良好的途径。 因此，结晶硅的晶粒尺寸的均匀性提高，TFT的电子迁移率提高。

公开(公告)号：US20120103413A1

公开(公告)日：2012-05-03

申请号：US13347969

申请日：2012-01-11

Applicant: Chin-Yao Tsai ,  Chih-Wei Chang ,  Ching-In Wu ,  Kai-Hsiang Chuang ,  Chih-Hsiung Chang ,  Kun-Chih Lin

Inventor： Chin-Yao Tsai ,  Chih-Wei Chang ,  Ching-In Wu ,  Kai-Hsiang Chuang ,  Chih-Hsiung Chang ,  Kun-Chih Lin

IPC: H01L31/02 ,  H01L31/18

CPC classification number: H01L31/03767 ,  C07C211/04 ,  C07C211/05 ,  H01L31/048 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

Abstract: A thin-film solar cell includes a body and a polymer layer. The body includes a first electrode layer, a photoelectric conversion layer, and a second electrode layer, and the polymer layer includes a hardening material and an interface material. The photoelectric conversion layer is disposed between the first electrode layer and the second electrode layer, and the polymer layer surrounds the photoelectric conversion layer, in which the interface material is used for bonding to the hardening material and the photoelectric conversion layer respectively. Therefore, the thin-film solar cell may reduce the Staebler-Wronski Effect generated by the photoelectric conversion layer in the photoelectric conversion procedure. Accordingly, the photoelectric conversion efficiency is improved.

Abstract translation: 薄膜太阳能电池包括主体和聚合物层。 主体包括第一电极层，光电转换层和第二电极层，聚合物层包括硬化材料和界面材料。 光电转换层设置在第一电极层和第二电极层之间，聚合物层围绕光电转换层，其中界面材料分别用于与硬化材料和光电转换层接合。 因此，薄膜太阳能电池可以减少由光电转换层产生的Staebler-Wronski效应。 因此，提高了光电转换效率。

公开(公告)号：US20120090676A1

公开(公告)日：2012-04-19

申请号：US13331100

申请日：2011-12-20

Applicant: Chih-Hsiung Lin ,  Yu-Tsang Chien ,  Chih-Hsiung Chang ,  Kun-Chih Lin ,  Yueh-Hsun Lee

Inventor： Chih-Hsiung Lin ,  Yu-Tsang Chien ,  Chih-Hsiung Chang ,  Kun-Chih Lin ,  Yueh-Hsun Lee

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/022466 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

Abstract: A thin-film solar cell and a method for manufacturing the same are presented, in which the dopant concentration turns low in a sloping way. The solar cell includes a substrate, a first contact region, a photoelectric conversion layer, and a second contact region. The first contact region a photoelectric conversion layer, and a second contact region are disposed on the substrate. At least one of the first contact region and the second contact region contains an N-type dopant, and the concentration of the N-type dopant is decreased gradually in a direction towards the photoelectric conversion layer. Through the thin-film solar cell and the method for manufacturing the same, the conversion efficiency of the solar cell is improved, and the thin-film solar cell and the manufacturing method are capable of being integrated with an existing manufacturing process of a solar cell, thereby simplifying the manufacturing process and reducing the cost.

Abstract translation: 提出了一种薄膜太阳能电池及其制造方法，其中掺杂剂浓度以倾斜方式变低。 太阳能电池包括基板，第一接触区域，光电转换层和第二接触区域。 第一接触区域是光电转换层，第二接触区域设置在基板上。 第一接触区域和第二接触区域中的至少一个包含N型掺杂剂，并且N型掺杂剂的浓度在朝向光电转换层的方向上逐渐减小。 通过薄膜太阳能电池及其制造方法，提高了太阳能电池的转换效率，并且薄膜太阳能电池和制造方法能够与现有的太阳能电池的制造工艺相结合 ，从而简化制造过程并降低成本。

公开(公告)号：US08088990B1

公开(公告)日：2012-01-03

申请号：US13118110

申请日：2011-05-27

Applicant: Chin-Yao Tsai ,  Yi-Kai Lin ,  I-Heng Tseng ,  Chih-Hsiung Chang ,  Kun-Chih Lin

Inventor： Chin-Yao Tsai ,  Yi-Kai Lin ,  I-Heng Tseng ,  Chih-Hsiung Chang ,  Kun-Chih Lin

IPC: H01L31/042

CPC classification number: H01L31/02167 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/0468 ,  Y02A30/62 ,  Y02B10/12 ,  Y02E10/50

Abstract: In one aspect of the present invention, a photovoltaic panel includes a substrate, a reflective layer formed on the substrate, a first conductive layer formed on the reflective layer, an active layer formed on the first conductive layer, and a second conductive layer formed on the active layer. The reflective layer has an index of refraction and a thickness such that the reflectance spectrum of the photovoltaic device for light incident on the substrate has a maximum in a selected wavelength range in the visible spectrum.

Abstract translation: 在本发明的一个方面中，光伏面板包括基板，形成在基板上的反射层，形成在反射层上的第一导电层，形成在第一导电层上的有源层，以及形成在第一导电层上的第二导电层 活动层。 反射层具有折射率和厚度，使得入射到基板上的光的光电器件的反射光谱在可见光谱中在选定的波长范围内具有最大值。

公开(公告)号：US20110232750A1

公开(公告)日：2011-09-29

申请号：US13150993

申请日：2011-06-01

Applicant: Kun-Chih Lin

Inventor： Kun-Chih Lin

IPC: H01L31/02 ,  H01L31/18 ,  H01L31/0232

CPC classification number: H01L31/0392 ,  H01L31/02168 ,  H01L31/072 ,  H01L31/073 ,  H01L31/0735 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/1836 ,  H01L31/1852 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: A solar cell module includes a substrate having a thin-film layer patterned in a manner to form with a split window and a solar cell disposed on the substrate. The solar cell includes plurality of material layers and a plurality of split ways corresponding to the material layers. The scope of the split window is constituted by at least one of the split ways.

Abstract translation: 太阳能电池模块包括具有以分裂窗形成的薄膜层和设置在基板上的太阳能电池的基板。 太阳能电池包括对应于材料层的多个材料层和多个分裂道。 分割窗口的范围由分割方式中的至少一个构成。

公开(公告)号：US20100330735A1

公开(公告)日：2010-12-30

申请号：US12874203

申请日：2010-09-01

Applicant: An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

Inventor： An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

IPC: H01L31/18

CPC classification number: H01L31/0384 ,  H01L27/14667 ,  H01L27/14692 ,  H01L31/03921 ,  Y02E10/50

Abstract: A method of forming an optical sensor includes the following steps. A substrate is provided, and a read-out device is formed on the substrate. a first electrode electrically connected to the read-out device is formed on the substrate. a photosensitive silicon-rich dielectric layer is formed on the first electrode, wherein the photosensitive silicon-rich dielectric layer comprises a plurality of nanocrystalline silicon crystals. A second electrode is formed on the photosensitive silicon-rich dielectric layer.

Abstract translation: 形成光学传感器的方法包括以下步骤。 提供基板，并且在基板上形成读出装置。 电连接到读出装置的第一电极形成在基板上。 在第一电极上形成感光性富硅介电层，其中感光性富硅介电层包含多个纳米晶体硅晶体。 第二电极形成在感光富硅电介质层上。

公开(公告)号：US07829920B2

公开(公告)日：2010-11-09

申请号：US12175585

申请日：2008-07-18

Applicant: An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin ,  Wen-Jen Chiang ,  Chih-Yang Chen ,  Chrong-Jung Lin ,  Ya-Chin King ,  Chih-Wei Chao ,  Chien-Sen Weng ,  Feng-Yuan Gan

Inventor： An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin ,  Wen-Jen Chiang ,  Chih-Yang Chen ,  Chrong-Jung Lin ,  Ya-Chin King ,  Chih-Wei Chao ,  Chien-Sen Weng ,  Feng-Yuan Gan

IPC: H01L31/062

CPC classification number: H01L31/153

Abstract: A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed.

Abstract translation: 光电检测器具有感测TFT（薄膜晶体管）和光电二极管。 感测TFT具有栅极和基极。 光电二极管具有与感测TFT的栅极和基极电连接的本征半导体区域。 感测TFT和光电二极管都具有包括低温多晶硅的结构。 还披露了包含光电检测器的显示面板。

公开(公告)号：US20100112737A1

公开(公告)日：2010-05-06

申请号：US12416934

申请日：2009-04-02

Applicant: Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Kun-Chih Lin

Inventor： Yu-Cheng Chen ,  Chen-Yueh Li ,  Ching-Sang Chuang ,  Kun-Chih Lin

IPC: H01L21/3115

CPC classification number: G02F1/133555 ,  G02F2001/136231

Abstract: A forming method of the present invention includes forming a first patterned conductive layer, which includes a transparent conductive layer and a metal layer stacked together on a substrate, where the first patterned conductive layer functions as gate lines, gate electrodes, common lines and predetermined transparent pixel electrode structures; and forming a second patterned conductive layer on the substrate. The second patterned conductive layer includes data lines and reflective pixel electrodes, and be directly connected to doping regions, such as source regions/drain regions. According to the forming method of the present invention, pixel structures of a transflective liquid crystal display device can be formed through five mask processes. Therefore, the manufacturing process of the transflective liquid crystal display device is effectively simplified, so the product yield is improved and the cost can be reduced.

Abstract translation: 本发明的形成方法包括形成第一图案化导电层，其包括在基板上堆叠在一起的透明导电层和金属层，其中第一图案化导电层用作栅极线，栅电极，共同线和预定透明 像素电极结构; 以及在所述衬底上形成第二图案化导电层。 第二图案化导电层包括数据线和反射像素电极，并且直接连接到诸如源极区/漏极区的掺杂区。 根据本发明的形成方法，可以通过五个掩模工艺形成半透射型液晶显示装置的像素结构。 因此，有效地简化了半透射型液晶显示装置的制造工艺，从而提高了产品成品率，降低了成本。

公开(公告)号：US20100012944A1

公开(公告)日：2010-01-21

申请号：US12400768

申请日：2009-03-09

Applicant: An-Thung Cho ,  Chin-Wei Hu ,  Ming-Wei Sun ,  Chih-Wei Chao ,  Chia-Tien Peng ,  Kun-Chih Lin

Inventor： An-Thung Cho ,  Chin-Wei Hu ,  Ming-Wei Sun ,  Chih-Wei Chao ,  Chia-Tien Peng ,  Kun-Chih Lin

IPC: H01L29/04 ,  H01L21/84

CPC classification number: H01L29/78633 ,  H01L29/78675

Abstract: A thin film transistor (TFT) formed on a transparent substrate is provided. The thin film transistor includes a patterned semiconductor layer, a gate insulating layer disposed on the patterned semiconductor layer, a gate electrode disposed on the gate insulating layer, and a patterned light-absorbing layer. The patterned semiconductor layer includes a channel region, and a source region and a drain region disposed on two opposite sides of the channel region in the pattern semiconductor layer. The patterned light-absorbing layer is disposed between the transparent substrate and the patterned semiconductor layer.

Abstract translation: 提供了形成在透明基板上的薄膜晶体管（TFT）。 薄膜晶体管包括图案化半导体层，设置在图案化半导体层上的栅极绝缘层，设置在栅极绝缘层上的栅电极和图案化的光吸收层。 图案化的半导体层包括沟道区，以及设置在图案半导体层中的沟道区的两个相对侧上的源极区和漏极区。 图案化的光吸收层设置在透明基板和图案化的半导体层之间。