High density corrugated wafer board panel product
    32.
    发明授权
    High density corrugated wafer board panel product 失效
    高密度瓦楞纸板面板产品

    公开(公告)号:US5047280A

    公开(公告)日:1991-09-10

    申请号:US293073

    申请日:1989-01-03

    申请人: Lars Bach

    发明人: Lars Bach

    IPC分类号: E04C2/32

    摘要: A `high density` corrugated wafer board panel is provided. The wafer board panel has a substantially uniform density ranging from between about 700 kg/m.sup.3 to 900 kg/m.sup.3. As a result of increasing the density of the panel without changing the panel weight per projected unit area, a panel having improved overall flexure performance properties is provided.

    摘要翻译: 提供“高密度”波纹晶片板面板。 晶片板面板具有从约700kg / m 3到900kg / m 3之间的基本均匀的密度。 由于在不改变每个投影单位面积的面板重量的情况下增加面板的密度,所以提供了具有改进的整体挠曲性能特性的面板。

    Apparatus for the manufacture of a corrugated wafer board panel
    33.
    发明授权
    Apparatus for the manufacture of a corrugated wafer board panel 失效
    用于制造波纹晶片板面板的装置

    公开(公告)号:US4616991A

    公开(公告)日:1986-10-14

    申请号:US765840

    申请日:1985-08-15

    摘要: A platen assembly is provided having a working surface which can be mechanically converted between planar and corrugated configurations. A mat of wood wafers coated with thermosetting resin binder is deposited between upper and lower, spaced apart platen assemblies of this type. The platen assemblies, in the planar configuration, are then pressed together to a limited extent to pre-compress the mat to fix the wafers. Horizontal force is then applied to the platen assemblies to convert them to the corrugated configuration, with the pre-compressed mat retained therebetween. The mat is therefore forced to adopt a corrugated form. The platen assemblies are then further pressed together and heated, to cure the resin and produce a corrugated wafer board panel.

    摘要翻译: 提供了具有工作表面的压板组件,该工作表面可在平面和波纹结构之间机械地转换。 涂有热固性树脂粘合剂的木片的垫子沉积在这种类型的上部和下部间隔开的压板组件之间。 在平面构型中的压板组件然后在一定程度上被压在一起,以预先压缩垫以固定晶片。 然后将水平力施加到压板组件以将它们转换成波纹状结构,其中预压垫保持在其间。 因此,垫子被迫采用波纹形式。 然后将压板组件进一步压在一起并加热,以固化树脂并产生波纹晶片板面板。

    Semiconductor laser with a weakly coupled grating
    35.
    发明授权
    Semiconductor laser with a weakly coupled grating 有权
    具有弱耦合光栅的半导体激光器

    公开(公告)号:US07776634B2

    公开(公告)日:2010-08-17

    申请号:US12290932

    申请日:2008-11-05

    IPC分类号: H01L21/00

    摘要: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

    摘要翻译: 公开了具有半导体衬底的半导体激光器,布置在半导体衬底上的激光层,平行于激光层布置的波导和带状光栅结构。 激光层,波导和光栅被布置成导致激光和光栅结构之间的弱耦合的结构,使得激光与增加数量的光栅元件相互作用。 还公开了一种用于制造这种半导体激光器的方法。

    Integrated circuit and methods of manufacturing a contact arrangement and an interconnection arrangement
    36.
    发明授权
    Integrated circuit and methods of manufacturing a contact arrangement and an interconnection arrangement 失效
    集成电路和制造接触装置和互连装置的方法

    公开(公告)号:US07763987B2

    公开(公告)日:2010-07-27

    申请号:US11679295

    申请日:2007-02-27

    申请人: Lars Bach

    发明人: Lars Bach

    IPC分类号: H01L21/4763

    摘要: A contact arrangement is manufactured by providing a substrate that includes first regions that are arranged along a row direction and a second region. An interlayer is provided that covers the first regions and the second region. A buried mask including a first trim opening above the first regions is provided. A top mask including first template openings is provided, where each first template opening is arranged above one of the first regions. A second template opening is provided above the second region. The fill material and the interlayer are etched to form contact trenches above the first regions and the second region. Substrate area efficient chains of evenly spaced contacts are provided.

    摘要翻译: 通过提供包括沿着行方向布置的第一区域和第二区域的基板来制造接触装置。 提供覆盖第一区域和第二区域的中间层。 提供了包括在第一区域上方的第一修剪开口的掩埋掩模。 提供包括第一模板开口的顶部掩模,其中每个第一模板开口布置在第一区域之上。 第二模板开口设置在第二区域的上方。 蚀刻填充材料和中间层以在第一区域和第二区域之上形成接触沟槽。 提供均匀间隔触点的基板区域有效链。

    Multisectional laser
    37.
    发明申请
    Multisectional laser 有权
    多段激光

    公开(公告)号:US20090268764A1

    公开(公告)日:2009-10-29

    申请号:US12456720

    申请日:2009-06-22

    IPC分类号: H01S3/10 H01S3/13

    摘要: Disclosed is a semiconductor laser in which the substrate comprises at least three independent functional sections in the direction of light wave propagation, said functional sections serving different functions and being individually triggered by means of electrodes via electrode leads. An intensification zone, a grid zone, and a phase adjustment zone are provided as functional sections. The light wave is optically intensified in the intensification zone while the phase of the advancing and returning wave is adjusted in the phase adjustment zone. The grid zone is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone and the phase adjustment zone.

    摘要翻译: 公开了一种半导体激光器,其中基板在光波传播方向上包括至少三个独立的功能部分,所述功能部分用于不同的功能,并且通过电极通过电极引线单独触发。 功能部分提供强化区域,网格区域和相位调整区域。 在相位调整区域中,在强化区域中光波被光学增强,同时在相位调整区域调整前进和返回波形的相位。 网格区域用于选择波长并调整强化区域和相位调整区域之间的耦合强度。

    Semiconductor laser with a weakly coupled grating
    38.
    发明申请
    Semiconductor laser with a weakly coupled grating 有权
    具有弱耦合光栅的半导体激光器

    公开(公告)号:US20090117678A1

    公开(公告)日:2009-05-07

    申请号:US12290932

    申请日:2008-11-05

    IPC分类号: H01L33/00 H01S5/00

    摘要: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

    摘要翻译: 公开了具有半导体衬底的半导体激光器,布置在半导体衬底上的激光层,平行于激光层布置的波导和带状光栅结构。 激光层,波导和光栅被布置成导致激光和光栅结构之间的弱耦合的结构,使得激光与增加数量的光栅元件相互作用。 还公开了一种用于制造这种半导体激光器的方法。

    Manufacturing method for an integrated circuit including different types of gate stacks, corresponding intermediate integrated circuit structure and corresponding integrated circuit
    39.
    发明申请
    Manufacturing method for an integrated circuit including different types of gate stacks, corresponding intermediate integrated circuit structure and corresponding integrated circuit 有权
    包括不同类型的栅极堆叠的集成电路的制造方法,相应的中间集成电路结构和相应的集成电路

    公开(公告)号:US20090078986A1

    公开(公告)日:2009-03-26

    申请号:US11903017

    申请日:2007-09-20

    申请人: LARS BACH

    发明人: LARS BACH

    IPC分类号: H01L27/115 H01L21/8247

    摘要: The present invention provides a manufacturing method for an integrated circuit and a corresponding integrated circuit. The integrated circuit comprises a plurality of first devices, each first device including a charge storage layer and a control electrode comprising a plurality of layers; and a plurality of second devices coupled to at least one of the plurality of first devices, each second device including a control electrode comprising at least one layer different from said plurality of layers.

    摘要翻译: 本发明提供一种用于集成电路和相应的集成电路的制造方法。 集成电路包括多个第一装置,每个第一装置包括电荷存储层和包括多个层的控制电极; 以及耦合到所述多个第一装置中的至少一个的多个第二装置,每个第二装置包括包括与所述多个层不同的至少一个层的控制电极。

    Semiconductor laser with a weakly coupled grating
    40.
    发明授权
    Semiconductor laser with a weakly coupled grating 有权
    具有弱耦合光栅的半导体激光器

    公开(公告)号:US07494836B2

    公开(公告)日:2009-02-24

    申请号:US11393611

    申请日:2006-03-30

    IPC分类号: H01L21/00

    摘要: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

    摘要翻译: 公开了具有半导体衬底的半导体激光器,布置在半导体衬底上的激光层,平行于激光层布置的波导和带状光栅结构。 激光层,波导和光栅布置成导致激光和光栅结构之间的弱耦合的结构,使得激光与增加数量的光栅元件相互作用。 还公开了一种用于制造这种半导体激光器的方法。