摘要:
A structural panel, board, or beam and method of making same, with straw that is oriented is provided. The straw is preferably oriented such that strands are parallel oriented in one or more directions. The straw strands are chopped, split, and a binder such as MDI is added.
摘要:
A `high density` corrugated wafer board panel is provided. The wafer board panel has a substantially uniform density ranging from between about 700 kg/m.sup.3 to 900 kg/m.sup.3. As a result of increasing the density of the panel without changing the panel weight per projected unit area, a panel having improved overall flexure performance properties is provided.
摘要翻译:提供“高密度”波纹晶片板面板。 晶片板面板具有从约700kg / m 3到900kg / m 3之间的基本均匀的密度。 由于在不改变每个投影单位面积的面板重量的情况下增加面板的密度,所以提供了具有改进的整体挠曲性能特性的面板。
摘要:
A platen assembly is provided having a working surface which can be mechanically converted between planar and corrugated configurations. A mat of wood wafers coated with thermosetting resin binder is deposited between upper and lower, spaced apart platen assemblies of this type. The platen assemblies, in the planar configuration, are then pressed together to a limited extent to pre-compress the mat to fix the wafers. Horizontal force is then applied to the platen assemblies to convert them to the corrugated configuration, with the pre-compressed mat retained therebetween. The mat is therefore forced to adopt a corrugated form. The platen assemblies are then further pressed together and heated, to cure the resin and produce a corrugated wafer board panel.
摘要:
An integrated circuit is described. The integrated circuit may comprise a multitude of floating-gate electrodes, wherein at least one of the floating-gate electrodes has a lower width and an upper width, the lower width being larger than the upper width, and wherein the at least one of the floating-gate electrodes comprises a transition metal. A corresponding manufacturing method for an integrated circuit is also described.
摘要:
A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.
摘要:
A contact arrangement is manufactured by providing a substrate that includes first regions that are arranged along a row direction and a second region. An interlayer is provided that covers the first regions and the second region. A buried mask including a first trim opening above the first regions is provided. A top mask including first template openings is provided, where each first template opening is arranged above one of the first regions. A second template opening is provided above the second region. The fill material and the interlayer are etched to form contact trenches above the first regions and the second region. Substrate area efficient chains of evenly spaced contacts are provided.
摘要:
Disclosed is a semiconductor laser in which the substrate comprises at least three independent functional sections in the direction of light wave propagation, said functional sections serving different functions and being individually triggered by means of electrodes via electrode leads. An intensification zone, a grid zone, and a phase adjustment zone are provided as functional sections. The light wave is optically intensified in the intensification zone while the phase of the advancing and returning wave is adjusted in the phase adjustment zone. The grid zone is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone and the phase adjustment zone.
摘要:
A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.
摘要:
The present invention provides a manufacturing method for an integrated circuit and a corresponding integrated circuit. The integrated circuit comprises a plurality of first devices, each first device including a charge storage layer and a control electrode comprising a plurality of layers; and a plurality of second devices coupled to at least one of the plurality of first devices, each second device including a control electrode comprising at least one layer different from said plurality of layers.
摘要:
A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.