Abstract:
A card edge connector for connecting a card to a printed circuit board includes an insulative housing, a plurality of contacts and a pair of grounding pads. The insulative housing has a lengthwise base portion having a card-receiving slot and a pair of locating arms having an extending portion which extends forwardly from the base portion. The contacts are retained in the insulative housing and extend into the card-receiving slot to electrically contact with the inserted card. The grounding pads each include a main body which has a frame and a solder pad. The locating arms each further include a spring fork-shaped locking portion extending from the extending portion for preventing the grounding pad releasing from the corresponding locating arm when the frame of the grounding pad is securely seated in the extending portion from the locking portion.
Abstract:
A card edge connector for mating with an electronic card includes an elongated housing (1), a number of contacts retained to the housing (1), and a retainer (2) at one end of the housing (1). The housing (1) has a pair of opposed side walls (11), a central slot (12) between the side walls and a fitting section at one end thereof. The fitting section defines a pair of axes holes (145). The retainer (2) has a base portion (21) with a pair of pivots (211) engaging with the axes holes (145), a latch projection (22) inwardly extending from the base portion for locking the electronic card, a flexible arm (23) unitarily extending from the base portion (21) to resist an inner wall of the fitting section for fastening the retainer (2) to the housing (1).
Abstract:
A card edge connector includes an elongated housing extending along an elongated direction thereof, and having a first housing half, a second housing half being discrete from the first housing half, and a central slot formed between the first and the second housing halves. A plurality of contacts are retained in the housing, and each has a contact portion protruding into the central slot. A width of the central slot could be adjusted before mounting the card edge connector to a mother board for receiving different daughter boards with different thicknesses.
Abstract:
An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.
Abstract:
An HDMI (High Definition Multimedia Interface) connector includes an insulating housing which has a receiving cavity and an inserting mouth. A connecting body is formed between the receiving cavity and the inserting mouth and defines two rows of passing holes. An insulating body is secured in the receiving cavity and includes a first insulating body and a second insulating body engaged with the first insulating body. A plurality of first signal terminals and a plurality of second signal terminals each have a fastening portion, a contacting portion and a flexible portion. The first signal terminals are integrated with the first insulating body by means of insert molding the corresponding fastening portions in the first insulating body and the second signal terminals are integrated with the second insulating body by means of insert molding the corresponding fastening portions in the second insulating body. The flexible portions are elastically received in the corresponding passing holes.
Abstract:
A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.
Abstract:
A light-emitting element includes a light-emitting stack for emitting light and a substrate structure including: a first substrate disposed under the light-emitting stack and having a first surface facing the light-emitting stack; and a second substrate disposed under the light-emitting stack and having a second surface facing the light-emitting stack; and a reflective layer formed between the first substrate and the second substrate and having an inclined angle not perpendicular to the first surface.
Abstract:
A light-emitting element array includes a conductive substrate; an adhesive layer disposed on the conductive substrate; a first epitaxial light-emitting stack layers disposed on the adhesive layer, the first epitaxial light-emitting stack layers including a first p-contact and an first n-contact, wherein the first p-contact and the first n-contact are disposed on the same side of the first epitaxial light-emitting stack layer; and a second epitaxial light-emitting stack layers disposed on the adhesive layer including a second p-contact and an second n-contact, wherein the second p-contact and the second n-contact are disposed on the opposite side of the epitaxial light-emitting stack layer; wherein the first epitaxial light-emitting stack layers and the second epitaxial light-emitting stack layers are electrically connected in anti-parallel.
Abstract:
A photoelectronic element includes a composite substrate including an electrically insulative substrate having a chamber; an intermediate layer; and an electrically conductive substrate; a bonding layer including an electrically conductive region and an electrically insulative region; a first current spreading layer; a first semiconductor stacked layer including a first semiconductor layer, an active layer, and a second semiconductor layer; a current blocking layer; a second current spreading layer; and a first electrode.