摘要:
A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.
摘要:
Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
摘要:
A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.
摘要:
Compositions are disclosed having the formula (3): [C′]k[Ta(O2)x(L′)y] (3), wherein x is an integer of 1 to 4, y is an integer of 1 to 4, Ta(O2)x(L′)y has a charge of 0 to −3, C′ is a counterion having a charge of +1 to +3, k is an integer of 0 to 3, L′ is an oxidatively stable organic ligand having a charge of 0 to −4, and L′ comprises an electron donating functional group selected from the group consisting of carboxylates, alkoxides, amines, amine oxides, phosphines, phosphine oxides, arsine oxides, and combinations thereof. The compositions have utility as high resolution photoresists.
摘要翻译:公开了具有式(3)的组合物:[C'] k [Ta(O 2)x(L')y](3)其中x是1至4的整数,y是1至4的整数, Ta(O 2)x(L')y具有0至-3的电荷,C'是具有+1至+3的电荷的抗衡离子,k是0至3的整数,L'是氧化稳定的有机物 配体的电荷为0至-4,L'包括选自羧酸盐,醇盐,胺,氧化胺,膦,氧化膦,胂氧化物及其组合的给电子官能团。 该组合物具有作为高分辨率光致抗蚀剂的作用。
摘要:
A method of forming an image on a photoresist. The method includes: forming a photoresist over a substrate; applying a topcoat composition, the topcoat composition comprising at least one fluorine-containing polymer and a casting solvent, onto the photoresist; removing the casting solvent of the topcoat composition resulting in the formation of a topcoat material over the photoresist; exposing the photoresist to radiation, the radiation changing a chemical composition of the regions of the photoresist exposed to the radiation, forming exposed and unexposed regions in the photoresist; and removing i) the topcoat material and ii) the exposed regions of the photoresist or the unexposed regions of the photoresist.
摘要:
A first aspect of the present invention is a topcoat composition, comprising: a copolymer represented by the formula (2): wherein n and m represent respective molar fractions such that n+m=1.
摘要翻译:本发明的第一方面是面漆组合物,其包含:由式(2)表示的共聚物:其中n和m表示相应的摩尔分数,使得n + m = 1。