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    PHOTOACID GENERATING POLYMERS CONTAINING A URETHANE LINKAGE FOR LITHOGRAPHY
    1.
    发明申请
    PHOTOACID GENERATING POLYMERS CONTAINING A URETHANE LINKAGE FOR LITHOGRAPHY 有权
    包含用于LITHOGRAPHY的URETHANE链接的光学发生聚合物

    公开(公告)号：US20130260313A1

    公开(公告)日：2013-10-03

    申请号：US13436881

    申请日：2012-03-31

    申请人： Robert David Allen ,  Phillip Joe Brock ,  Masaki Fujiwara ,  Kazuhiko Maeda ,  Hoa D. Truong

    发明人： Robert David Allen ,  Phillip Joe Brock ,  Masaki Fujiwara ,  Kazuhiko Maeda ,  Hoa D. Truong

    IPC分类号： G03F7/20 ,  G03F7/004 ,  C08F228/02

    CPC分类号： G03F7/0397 ,  C08F228/02 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/2041

    摘要： A photoacid generating polymer (PAG polymer) comprises i) a first repeat unit of capable of reacting with a photogenerated acid to form a carboxylic acid containing repeat unit, ii) a second repeat unit of capable of forming the photogenerated acid, and iii) a third repeat unit comprising a norbornyl ester, wherein a norbornyl ring of the norbornyl ester comprises a monovalent substituent having the formula *-L′-C(CF3)2(OH). L′ is a divalent linking group comprising at least one carbon and the starred bond of L′ is linked to the norbornyl ring. The first repeat unit, second repeat unit, and the third repeat unit are covalently bound repeat units of the PAG polymer.

    摘要翻译： 产生光酸的聚合物（PAG聚合物）包括i）能够与光生酸反应形成含羧酸的重复单元的第一重复单元，ii）能够形成光生酸的第二重复单元，和iii） 包含降冰片基酯的第三重复单元，其中降冰片基酯的降冰片基环包含具有式* -L'-C（CF 3）2（OH）的一价取代基。 L'是包含至少一个碳的二价连接基团，L'的星形键与降冰片基环连接。 第一重复单元，第二重复单元和第三重复单元是PAG聚合物的共价键重复单元。

    Photoresist composition
    7.
    发明授权
    Photoresist composition 失效
    光刻胶组成

    公开(公告)号：US07014980B2

    公开(公告)日：2006-03-21

    申请号：US10916934

    申请日：2004-08-12

    申请人： Robert David Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard A. DiPietro ,  Debra Fenzel-Alexander ,  Carl Larson ,  David R. Medeiros ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa D. Truong ,  Gregory M. Wallraff

    发明人： Robert David Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard A. DiPietro ,  Debra Fenzel-Alexander ,  Carl Larson ,  David R. Medeiros ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa D. Truong ,  Gregory M. Wallraff

    IPC分类号： G03F7/039 ,  G03F7/32 ,  G03F7/38 ,  C08J3/28

    CPC分类号： C08F220/22 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/108

    摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译： 提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物，其中R 1表示氢（H），1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基（CF 3 N 3）基团的取代的脂族基团，或 取代或未取代的芳基; 其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2） （CH 2 CO 2），或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3 S），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2） ）或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

    Chemically amplified photoresist composition and process for its use
    8.
    发明授权
    Chemically amplified photoresist composition and process for its use 有权
    化学扩增的光致抗蚀剂组合物及其使用方法

    公开(公告)号：US09057951B2

    公开(公告)日：2015-06-16

    申请号：US12547808

    申请日：2009-08-26

    申请人： Robert D. Allen ,  Phillip J. Brock ,  Richard A. DiPietro ,  Hoa D. Truong

    发明人： Robert D. Allen ,  Phillip J. Brock ,  Richard A. DiPietro ,  Hoa D. Truong

    IPC分类号： G03F7/039 ,  G03F7/30

    CPC分类号： G03F7/0392 ,  G03F7/0397 ,  G03F7/30

    摘要： Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition.

    摘要翻译： 光致抗蚀剂组合物包括酚类聚合物与不含含醚和/或羧酸的部分的（甲基）丙烯酸酯基共聚物的共混物。 （甲基）丙烯酸酯共聚物包括选自丙烯酸烷基酯，取代的丙烯酸烷基酯，（甲基）丙烯酸烷基酯，取代的甲基丙烯酸烷基酯及其混合物的第一单体和选自以下的第二单体： 丙烯酸酯，（甲基）丙烯酸酯或其具有酸可裂解酯取代基的混合物; 和光致酸发生器。 还公开了用光致抗蚀剂组合物在衬底上产生光致抗蚀剂图像的方法。

    METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM
    9.
    发明申请
    METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM 有权
    方向自组装方法和形成的层状结构

    公开(公告)号：US20110147983A1

    公开(公告)日：2011-06-23

    申请号：US12641959

    申请日：2009-12-18

    申请人： Joy CHENG ,  William D. HINSBERG ,  Hiroshi ITO ,  Atsuko Ito ,  Ho-Cheol KIM ,  Young-Hye NA ,  Daniel P. SANDERS ,  Linda Karin SUNDBERG ,  Hoa D. TRUONG ,  Gregory Michael WALLRAFF

    发明人： Joy CHENG ,  William D. HINSBERG ,  Hiroshi ITO ,  Atsuko Ito ,  Ho-Cheol KIM ,  Young-Hye NA ,  Daniel P. SANDERS ,  Linda Karin SUNDBERG ,  Hoa D. TRUONG ,  Gregory Michael WALLRAFF

    IPC分类号： B28B1/14

    CPC分类号： B82Y40/00 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0392 ,  G03F7/09 ,  G03F7/091 ,  G03F7/165 ,  G03F7/325 ,  G03F7/327 ,  G03F7/40

    摘要： A method of forming a layered structure comprising a domain pattern of a self-assembled material comprises: disposing on a substrate a photoresist layer comprising a non-crosslinking photoresist; optionally baking the photoresist layer; pattern-wise exposing the photoresist layer to first radiation; optionally baking the exposed photoresist layer; and developing the exposed photoresist layer with a non-alkaline developer to form a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist; wherein the developed photoresist is not soluble in a given organic solvent suitable for casting a given material capable of self-assembly, and the developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the given material capable of self-assembly dissolved in the given organic solvent is casted on the patterned photoresist layer, and the given organic solvent is removed. The casted given material is allowed to self-assemble while optionally heating and/or annealing the casted given material, thereby forming the layered structure comprising the domain pattern of the self-assembled given material.

    摘要翻译： 形成包括自组装材料的畴图案的层状结构的方法包括：在基底上设置包含非交联光致抗蚀剂的光致抗蚀剂层; 任选地烘烤光致抗蚀剂层; 将光致抗蚀剂层图案化地暴露于第一辐射; 任选地烘烤曝光的光致抗蚀剂层; 以及用非碱性显影剂显影曝光的光致抗蚀剂层以形成包含非交联显影光致抗蚀剂的负色图案光刻胶层; 其中显影的光致抗蚀剂不溶于适于铸造能够自组装的给定材料的给定有机溶剂中，并且显影的光致抗蚀剂可溶于碱性显影液和/或第二有机溶剂。 将包含溶解在给定有机溶剂中的能够自组装的给定材料的溶液浇铸在图案化的光致抗蚀剂层上，并且除去给定的有机溶剂。 铸造的给定材料允许自组装，同时任选地加热和/或退火铸造的给定材料，从而形成包括自组装给定材料的畴图案的分层结构。