公开(公告)号：US20070083784A1

公开(公告)日：2007-04-12

申请号：US11525599

申请日：2006-09-22

申请人： Seung-kyu Park ,  Jong-moo Huh ,  Nam-deog Kim ,  Joon-hoo Choi

发明人： Seung-kyu Park ,  Jong-moo Huh ,  Nam-deog Kim ,  Joon-hoo Choi

IPC分类号： G06F1/32

CPC分类号： H01L27/3276

摘要： A display device that uniformly supplies a driving voltage to a display device is presented. The display device includes a plurality of power supply lines, a power supply bar electrically connected to a first end portion of the power supply lines, a power supply pad providing a driving voltage to the power supply bar, contact holes formed in the power supply bar and the power supply pad, and a bridge electrode connecting the power supply bar to the power supply pad through the contact holes.

摘要翻译： 提出了一种向显示装置均匀地提供驱动电压的显示装置。 显示装置包括多个电源线，电连接到电源线的第一端部的电源棒，向电源棒提供驱动电压的电源焊盘，形成在电源棒中的接触孔 电源焊盘和通过接触孔将电源棒连接到电源焊盘的桥接电极。

公开(公告)号：US08841206B2

公开(公告)日：2014-09-23

申请号：US13211700

申请日：2011-08-17

申请人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L27/32

CPC分类号： H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

摘要翻译： 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。

公开(公告)号：US08507917B2

公开(公告)日：2013-08-13

申请号：US13209617

申请日：2011-08-15

申请人： Byoung-Keon Park ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Yong-Duck Son ,  Jae-Wan Jung

发明人： Byoung-Keon Park ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Yong-Duck Son ,  Jae-Wan Jung

IPC分类号： H01L21/322

CPC分类号： H01L29/4908 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/66757 ,  H01L29/78675

摘要： A thin film transistor includes a substrate, a semiconductor layer provided on the substrate and crystallized by using a metal catalyst, a gate electrode insulated from and disposed on the semiconductor layer, and a getter layer disposed between the semiconductor layer and the gate electrode and formed with a metal oxide having a diffusion coefficient that is less than that of the metal catalyst in the semiconductor layer.

摘要翻译： 薄膜晶体管包括衬底，设置在衬底上并通过使用金属催化剂结晶的半导体层，绝缘并设置在半导体层上的栅电极以及设置在半导体层和栅电极之间的吸气剂层，并形成 其中金属氧化物的扩散系数小于半导体层中的金属催化剂的扩散系数。

公开(公告)号：US20120049199A1

公开(公告)日：2012-03-01

申请号：US13137428

申请日：2011-08-15

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Yong-Duck Son ,  Byung-Soo So ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Tak-Young Lee ,  Jong-Ryuk Park

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Yong-Duck Son ,  Byung-Soo So ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Tak-Young Lee ,  Jong-Ryuk Park

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L33/16 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66757 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1218 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/78603

摘要： A method of forming a polycrystalline layer includes forming a buffer layer on a substrate; treating the buffer layer with hydrogen plasma; forming an amorphous silicon layer on the buffer layer; forming a metallic catalyst layer for crystallizing the amorphous silicon layer on the amorphous silicon layer; and heat treating the amorphous silicon layer to form a polycrystalline silicon layer.

摘要翻译： 形成多晶层的方法包括在基板上形成缓冲层; 用氢等离子体处理缓冲层; 在缓冲层上形成非晶硅层; 形成用于使非晶硅层上的非晶硅层结晶的金属催化剂层; 并且对非晶硅层进行热处理以形成多晶硅层。

公开(公告)号：US20110248277A1

公开(公告)日：2011-10-13

申请号：US12975809

申请日：2010-12-22

申请人： Dong-Hyun LEE ,  Ki-Yong LEE ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

发明人： Dong-Hyun LEE ,  Ki-Yong LEE ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

IPC分类号： H01L27/12 ,  H01L21/20 ,  H01L21/84

CPC分类号： H01L21/02532 ,  H01L21/02488 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765

摘要： A method of crystallizing an amorphous silicon layer, a method of manufacturing a thin film transistor using the same, and a thin film transistor using the manufacturing method, the crystallizing method including: forming an amorphous silicon layer; positioning crystallization catalyst particles on the amorphous silicon layer to be separated from each other; selectively removing the crystallization catalyst particles from a portion of the amorphous silicon layer; and crystallizing the amorphous silicon layer by a heat treatment.

摘要翻译： 一种使非晶硅层结晶的方法，使用其的薄膜晶体管的制造方法和使用该制造方法的薄膜晶体管，所述结晶方法包括：形成非晶硅层; 将结晶催化剂颗粒定位在待分离的非晶硅层上; 从非晶硅层的一部分选择性地除去结晶催化剂颗粒; 并通过热处理使非晶硅层结晶。

公开(公告)号：US20110233529A1

公开(公告)日：2011-09-29

申请号：US12929694

申请日：2011-02-09

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tak-Young Lee ,  Jong-Ryuk Park ,  Jae-Wan Jung

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tak-Young Lee ,  Jong-Ryuk Park ,  Jae-Wan Jung

IPC分类号： H01L51/52 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66742 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/66757 ,  H01L29/78618 ,  H01L51/0081

摘要： A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.

摘要翻译： 一种包括薄膜晶体管的基板，所述基板包括设置在所述基板上的有源层，所述有源层包括沟道区域和源极和漏极区域，设置在所述有源层上的栅极电极，对应于所述栅电极的沟道区域， 插入在有源层和栅电极之间的栅极绝缘层，设置成覆盖有源层和栅电极的层间绝缘层，具有部分地暴露有源层的第一和第二接触孔的层间绝缘层，设置的源极和漏极 在层间绝缘层上，对应于源极和漏极以及欧姆接触层的源极和漏极区域，欧姆接触层介于层间绝缘层和源极和漏极之间，并且使源极和漏极区域通过 第一和第二接触孔。

公开(公告)号：US07764327B2

公开(公告)日：2010-07-27

申请号：US11676011

申请日：2007-02-16

申请人： Jong-moo Huh ,  Joon-hoo Choi ,  Seung-kyu Park

发明人： Jong-moo Huh ,  Joon-hoo Choi ,  Seung-kyu Park

IPC分类号： G02F1/136 ,  G02F1/1335 ,  G02F1/1333

CPC分类号： G02F1/13624 ,  G09G3/3225 ,  G09G3/3648 ,  G09G2300/0426 ,  G09G2300/0443 ,  G09G2300/0809 ,  H01L27/3262

摘要： A display device includes a first switching transistor, a first driving transistor connected to the first switching transistor, a second switching transistor including an input terminal connected to an output terminal of the first switching transistor, a second driving transistor connected to the second switching transistor, and a pixel unit comprising a sub-pixel electrode connected to the first driving transistor and a main pixel electrode separated from the sub-pixel electrode and connected to the second driving transistor.

摘要翻译： 显示装置包括第一开关晶体管，连接到第一开关晶体管的第一驱动晶体管，第二开关晶体管，包括连接到第一开关晶体管的输出端的输入端，连接到第二开关晶体管的第二驱动晶体管， 以及像素单元，包括连接到第一驱动晶体管的子像素电极和与子像素电极分离并连接到第二驱动晶体管的主像素电极。

公开(公告)号：US07759862B2

公开(公告)日：2010-07-20

申请号：US11604095

申请日：2006-11-22

申请人： Seung-kyu Park ,  Jong-moo Huh ,  Sang-goo Jeon

发明人： Seung-kyu Park ,  Jong-moo Huh ,  Sang-goo Jeon

IPC分类号： H01J1/62

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3248 ,  H01L2251/568

摘要： A display device that lends itself to easy repair of a defective pixel is presented. The device includes: a thin film transistor formed having a first electrode and a second electrode, the second electrode having a first part facing the first electrode, a second part that protrudes from the first part and having a first width, and a third part that extends from the second part and having a second width which is different from the first width. The device also includes a wall encompassing the pixel electrode and a common electrode formed on the wall.In one version of the repairing process, the second part of the second electrode is coupled to the common electrode. This coupling causes electric current from the second electrode to flow to the common electrode instead of to a light emitting diode, thereby converting a white spot to a black spot.

摘要翻译： 呈现出易于修复缺陷像素的显示装置。 该器件包括：薄膜晶体管，其形成为具有第一电极和第二电极，第二电极具有面向第一电极的第一部分，从第一部分突出并具有第一宽度的第二部分，以及第三部分， 从第二部分延伸并且具有与第一宽度不同的第二宽度。 该装置还包括围绕像素电极的壁和形成在壁上的公共电极。 在修复过程的一个版本中，第二电极的第二部分耦合到公共电极。 该耦合使得来自第二电极的电流流向公共电极而不是发光二极管，从而将白点转换成黑点。

公开(公告)号：US07709838B2

公开(公告)日：2010-05-04

申请号：US11550187

申请日：2006-10-17

申请人： Jong-Moo Huh ,  Seung-Kyu Park ,  Nam-Deog Kim ,  Joon-Hoo Choi

发明人： Jong-Moo Huh ,  Seung-Kyu Park ,  Nam-Deog Kim ,  Joon-Hoo Choi

IPC分类号： H01L31/00

CPC分类号： H01L27/124 ,  H01L27/3244

摘要： The present invention relates to an OLED display and a manufacturing method thereof, including a substrate, a control electrode formed on the substrate, a polysilicon semiconductor formed on the control electrode, a data line including an input electrode at least partially overlapping the polysilicon semiconductor and an output electrode facing the input electrode, an insulating layer covering the data line and the output electrode and having a contact hole, a gate line connected to the control electrode through the contact hole, and a pixel electrode connected to the output electrode.

摘要翻译： OLED显示器及其制造方法技术领域本发明涉及一种OLED显示器及其制造方法，包括基板，形成在基板上的控制电极，形成在控制电极上的多晶硅半导体，数据线，其包括至少部分地与多晶硅半导体重叠的输入电极和 面向输入电极的输出电极，覆盖数据线和输出电极并具有接触孔的绝缘层，通过接触孔连接到控制电极的栅极线和连接到输出电极的像素电极。

公开(公告)号：US20100096638A1

公开(公告)日：2010-04-22

申请号：US12466100

申请日：2009-05-14

申请人： Byoung Kwon Choo ,  Joon Hoo Choi ,  Kyu-Sik Cho ,  Seung-Kyu Park ,  Yong-Hwan Park ,  Sang-Ho Moon

发明人： Byoung Kwon Choo ,  Joon Hoo Choi ,  Kyu-Sik Cho ,  Seung-Kyu Park ,  Yong-Hwan Park ,  Sang-Ho Moon

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/124 ,  H01L27/1296 ,  H01L29/786

摘要： A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.

摘要翻译： 一种薄膜晶体管基板，包括基板，形成在基板上的第一和第二栅电极，形成在第一和第二栅电极上的栅极绝缘层，形成在栅极上的第一半导体和第二半导体 绝缘层，并且分别与第一栅电极和第二栅电极重叠，形成在第一半导体上并且彼此相对并且彼此分开定位的第一源电极和第一漏电极，源电极连接到 所述第一漏电极和与所述第二源电极相对并间隔开的第二漏电极，其中所述第二源电极和所述第二漏电极形成在所述第二半导体上，以及像素电极，其电连接到所述第二漏电极， 其制造方法以及具有该显示装置的显示装置。