CRYSTAL PULLER FOR INHIBITING MELT CONTAMINATION
    31.
    发明申请
    CRYSTAL PULLER FOR INHIBITING MELT CONTAMINATION 审中-公开
    用于抑制熔体污染的水晶拉丝机

    公开(公告)号:US20160083864A1

    公开(公告)日:2016-03-24

    申请号:US14857880

    申请日:2015-09-18

    Abstract: A crystal puller for growing a crystal ingot includes a housing, insulation, a crucible assembly, a heat shield, and a dust barrier. The housing encloses a growth chamber, and has an upper wall with an inner surface and an aperture. The insulation separates an inside of the housing into an upper area and a lower area, and has a central opening. The crucible assembly is within the lower area to contain the melt. The heat shield is adjacent the central opening of the insulation, and forms a labyrinth gas path with the crucible assembly. The dust barrier extends from the inner surface of the upper wall to one of the insulation and the heat shield, and forms a seal with the upper wall around the aperture to inhibit particles from entering the growth chamber through the upper area of the housing.

    Abstract translation: 用于生长晶体锭的晶体拉拔器包括壳体,绝缘体,坩埚组件,隔热罩和防尘屏障。 壳体包围生长室,并且具有带有内表面和孔的上壁。 绝缘体将壳体的内部分隔成上部区域和下部区域,并且具有中心开口。 坩埚组件在容纳熔体的下部区域内。 隔热板靠近绝缘体的中心开口,并与坩埚组件形成迷宫式气路。 防尘屏障从上壁的内表面延伸到绝缘层和隔热层之一,并且与孔周围的上壁形成密封,以防止颗粒通过壳体的上部区域进入生长室。

    METHOD OF DESIGNING A PASSAGE THROUGH A WEIR FOR ALLOWING DILUTIONS OF IMPURITIES
    32.
    发明申请
    METHOD OF DESIGNING A PASSAGE THROUGH A WEIR FOR ALLOWING DILUTIONS OF IMPURITIES 审中-公开
    通过庇护设计通道的方法允许使用稀释剂

    公开(公告)号:US20160024686A1

    公开(公告)日:2016-01-28

    申请号:US14341589

    申请日:2014-07-25

    CPC classification number: C30B15/22 C30B15/02 C30B15/12 C30B15/20 C30B29/06

    Abstract: A method for growing a crystal ingot from a melt in a crystal growing system is provided. The system includes a crucible and a barrier disposed within the crucible. The method includes identifying a Peclet number (Pe) with an advective transport rate that is less than a diffusive transport rate, calculating a cross-sectional area of a passage to be formed in the barrier based on the identified Peclet number to allow outward diffusion of impurities through the passage during growth of the crystal ingot, and growing the crystal ingot using the barrier having the passage formed therein.

    Abstract translation: 提供了一种在晶体生长系统中从熔体生长晶锭的方法。 该系统包括设置在坩埚内的坩埚和屏障。 该方法包括以小于扩散传输速率的平流传输速率来识别佩佩莱数(Pe),基于所识别的佩佩克数来计算要在屏障中形成的通道的横截面积,以允许向外扩散 通过晶体生长期间的通道产生杂质,并且使用其中形成通道的阻挡层生长晶锭。

    WEIR FOR INHIBITING MELT CONTAMINATION
    33.
    发明申请
    WEIR FOR INHIBITING MELT CONTAMINATION 有权
    抑制熔体污染

    公开(公告)号:US20160024684A1

    公开(公告)日:2016-01-28

    申请号:US14341584

    申请日:2014-07-25

    Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a first crucible, a barrier, and a shield. The first crucible has a first base and a first sidewall forming a first cavity for containing the melt. The barrier is disposed within the first cavity of the first crucible to inhibit movement of the melt from outward of the barrier to inward of the barrier. The barrier extends from the first base to above the melt. The barrier has an inner arm and an outer arm extending upward to form a channel therebetween. The shield extends downward between the inner arm and the outer arm to inhibit passage of contaminants.

    Abstract translation: 提供了用于从熔体生长晶锭的系统。 该系统包括第一坩埚,屏障和屏蔽。 第一坩埚具有形成用于容纳熔体的第一腔的第一基底和第一侧壁。 屏障设置在第一坩埚的第一腔内,以阻止熔体从屏障的外部移动到屏障的内侧。 阻挡层从第一基底延伸到熔体之上。 屏障具有向上延伸的内臂和外臂,以在它们之间形成通道。 护罩在内臂和外臂之间向下延伸以阻止污染物通过。

    SOLAR POWER SYSTEM AND SOLAR ENERGY TRACKING METHOD
    34.
    发明申请
    SOLAR POWER SYSTEM AND SOLAR ENERGY TRACKING METHOD 审中-公开
    太阳能发电系统和太阳能能量跟踪方法

    公开(公告)号:US20150162868A1

    公开(公告)日:2015-06-11

    申请号:US14610607

    申请日:2015-01-30

    Inventor: Boo-Youl Lee

    Abstract: A solar power system and a solar energy chasing method. Errors may be corrected in the installation area of a solar energy collecting plate with solar cells, particularly, in the installation direction thereof. Therefore, a control angle may be operated and determined, so that the solar cells or the solar energy collecting plate may be rotated precisely in the desired direction. In the case of disposing a plurality of solar energy collecting plates, the solar energy collecting plates may be controlled according to a predetermined rotation angle, thereby increasing solar energy absorbing efficiency.

    Abstract translation: 太阳能发电系统和太阳能追光方法。 在具有太阳能电池的太阳能收集板的安装区域中,特别是在其安装方向上可能会纠正错误。 因此,可以操作和确定控制角度,使得太阳能电池或太阳能收集板可以在期望的方向上精确地旋转。 在设置多个太阳能收集板的情况下,可以根据预定的旋转角度来控制太阳能收集板,从而提高太阳能吸收效率。

    METHODS AND SYSTEMS FOR PHOTOVOLTAIC SYSTEM MONITORING
    35.
    发明申请
    METHODS AND SYSTEMS FOR PHOTOVOLTAIC SYSTEM MONITORING 审中-公开
    用于光伏系统监测的方法和系统

    公开(公告)号:US20150123798A1

    公开(公告)日:2015-05-07

    申请号:US14072485

    申请日:2013-11-05

    CPC classification number: G08B21/182 G08B13/12

    Abstract: In one example, a method of monitoring a photovoltaic (PV) system located at a first location includes receiving, by a gateway device at the first location, data concerning a plurality of components of the PV system, determining, by the gateway device, if the received data satisfies at least one alert condition, and transmitting, by the gateway device, an alert notification to a computing device located at a second location when the received data satisfies at least one alert condition.

    Abstract translation: 在一个示例中,监视位于第一位置处的光伏(PV)系统的方法包括由第一位置处的网关设备接收关于PV系统的多个组件的数据,由网关设备确定是否 所接收的数据满足至少一个警报条件,并且当接收到的数据满足至少一个警报条件时,网关设备向位于第二位置的计算设备发送警报通知。

    METHOD AND SYSTEM FOR FULL RESOLUTION REAL-TIME DATA LOGGING
    36.
    发明申请
    METHOD AND SYSTEM FOR FULL RESOLUTION REAL-TIME DATA LOGGING 有权
    用于全分辨率实时数据记录的方法和系统

    公开(公告)号:US20140189273A1

    公开(公告)日:2014-07-03

    申请号:US14135815

    申请日:2013-12-20

    Abstract: A method and data-logging system are provided. The system includes a map-ahead thread configured to acquire blocks of private memory for storing data to be logged, the blocks of private memory being twice as large as the file page size, a master thread configured to write data to the blocks of private memory, in real-time and in full resolution, the data acquired during operation of a machine generating the data and written to the blocks of private memory in real-time, the machine including a controller including a processor communicatively coupled to a memory having processor instructions therein, and a write-behind thread configured to acquire pages of memory that are mapped to pages in a file, copy the data from the blocks of private memory to the acquired file-mapped blocks of memory.

    Abstract translation: 提供了一种方法和数据记录系统。 所述系统包括映射提前线程,其被配置为获取用于存储待记录数据的专用存储器块,所述专用存储器块是所述文件页大小的两倍;主线程,被配置为将数据写入所述专用存储器块 在实时和全分辨率下,实时地生成数据并写入专用存储器块的机器的操作期间获取的数据,该机器包括控制器,其包括通信地耦合到具有处理器指令的存储器的处理器 以及写入线程,其被配置为获取映射到文件中的页面的存储器页面,将数据从专用存储器块复制到所获取的文件映射的存储器块。

    METHOD FOR LOW TEMPERATURE LAYER TRANSFER IN THE PREPARATION OF MULTILAYER SEMICONDUTOR DEVICES
    37.
    发明申请
    METHOD FOR LOW TEMPERATURE LAYER TRANSFER IN THE PREPARATION OF MULTILAYER SEMICONDUTOR DEVICES 有权
    制备多层半导体器件的低温层传输方法

    公开(公告)号:US20140187020A1

    公开(公告)日:2014-07-03

    申请号:US14133893

    申请日:2013-12-19

    CPC classification number: H01L21/76254

    Abstract: A method of preparing a monocrystalline donor substrate, the method comprising (a) implanting helium ions through the front surface of the monocrystalline donor substrate to an average depth D1 as measured from the front surface toward the central plane; (b) implanting hydrogen ions through the front surface of the monocrystalline donor substrate to an average depth D2 as measured from the front surface toward the central plane; and (c) annealing the monocrystalline donor substrate at a temperature sufficient to form a cleave plane in the monocrystalline donor substrate. The average depth D1 and the average depth D2 are within about 1000 angstroms.

    Abstract translation: 一种制备单晶供体衬底的方法,所述方法包括(a)从所述单晶施体衬底的前表面将氦离子注入到从所述表面朝向中心平面测量的平均深度D1; (b)将氢离子从单晶供体衬底的前表面注入从前表面朝向中心平面测得的平均深度D2; 和(c)在足以在单晶供体衬底中形成解理面的温度下退火单晶供体衬底。 平均深度D1和平均深度D2在约1000埃以内。

    WEIR FOR INHIBITING MELT FLOW IN A CRUCIBLE
    39.
    发明申请
    WEIR FOR INHIBITING MELT FLOW IN A CRUCIBLE 有权
    用于抑制可溶性的熔体流动

    公开(公告)号:US20140174337A1

    公开(公告)日:2014-06-26

    申请号:US14107743

    申请日:2013-12-16

    CPC classification number: C30B15/12 C30B11/002 C30B15/002 Y10T117/1052

    Abstract: A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.

    Abstract translation: 用于生长晶锭的系统包括坩埚和堰。 坩埚具有用于在其中容纳硅熔体的基部和侧壁。 堰沿着坩埚的底部从坩埚的侧壁向内定位。 堰具有连接至少一对腿部的主体,以防止硅熔体在其间移动。

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