公开(公告)号：US20100261300A1

公开(公告)日：2010-10-14

申请号：US12756191

申请日：2010-04-08

Applicant: PO MIN TU ,  SHIH CHENG HUANG ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PANG MA ,  TZU CHIEN HONG ,  CHIA HUI SHEN

Inventor： PO MIN TU ,  SHIH CHENG HUANG ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PANG MA ,  TZU CHIEN HONG ,  CHIA HUI SHEN

IPC: H01L21/306 ,  H01L21/20 ,  H01L21/28

CPC classification number: H01L33/0079 ,  H01L29/2003

Abstract: A method for separating an epitaxial substrate from a semiconductor layer initially forms a patterned silicon dioxide layer between a substrate and a semiconductor layer, and then separates the substrate from the patterned silicon dioxide layer using two wet etching processes.

Abstract translation: 用于从半导体层分离外延衬底的方法最初在衬底和半导体层之间形成图案化的二氧化硅层，然后使用两个湿法蚀刻工艺将衬底与图案化的二氧化硅层分离。

公开(公告)号：US20100230711A1

公开(公告)日：2010-09-16

申请号：US12722231

申请日：2010-03-11

Applicant: CHESTER KUO ,  LUNG HSIN CHEN ,  WEN LIANG TSENG ,  SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

Inventor： CHESTER KUO ,  LUNG HSIN CHEN ,  WEN LIANG TSENG ,  SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

IPC: H01L33/00

CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/0079 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A method for fabricating flip-chip semiconductor optoelectronic devices initially flip-chip bonds a semiconductor optoelectronic chip attached to an epitaxial substrate to a packaging substrate. The epitaxial substrate is then separated using lift-off technology.

Abstract translation: 用于制造倒装芯片半导体光电器件的方法首先将连接到外延衬底的半导体光电芯片倒装芯片结合到封装衬底。 然后使用剥离技术分离外延衬底。

公开(公告)号：US20100224897A1

公开(公告)日：2010-09-09

申请号：US12716040

申请日：2010-03-02

Applicant: SHIH CHENG HUANG ,  CHIH PANG MA ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

Inventor： SHIH CHENG HUANG ,  CHIH PANG MA ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

IPC: H01L33/02 ,  H01L21/306

CPC classification number: H01L33/20 ,  H01L33/08

Abstract: A semiconductor optoelectronic device with enhanced light extraction efficiency includes at least one protrusion structure, which can be formed around a light-emitting region of the device. The at least one protrusion structure can include a plurality of protrusion structures in one embodiment. In addition, a fabricating method for forming a semiconductor optoelectronic device with enhanced light extraction efficiency is provided in the present invention.

Abstract translation: 具有增强的光提取效率的半导体光电子器件包括可以围绕器件的发光区域形成的至少一个突起结构。 在一个实施例中，至少一个突起结构可以包括多个突起结构。 此外，在本发明中提供了一种用于形成具有增强的光提取效率的半导体光电子器件的制造方法。

公开(公告)号：US20100208451A1

公开(公告)日：2010-08-19

申请号：US12405219

申请日：2009-03-16

Applicant: Sheng-Chieh Chao ,  Hung-Yi Ou Yang ,  Wen-Yu Lin

Inventor： Sheng-Chieh Chao ,  Hung-Yi Ou Yang ,  Wen-Yu Lin

IPC: G02F1/13357 ,  H01J9/24

CPC classification number: G02F1/133604 ,  G02F2001/133613

Abstract: A backlight module includes a housing and a plurality of U-type lamps and a plurality of straight-type lamps. The U-type lamps and the straight-type lamps are arranged in an alternate way so that the pitches between the U-type lamps and the straight-type lamps may be various to provide a variation of brightness of the backlight module.

Abstract translation: 背光模块包括壳体和多个U型灯和多个直型灯。 U型灯和直型灯以交替的方式布置，使得U型灯和直型灯之间的间距可以是各种各样的，以提供背光模块的亮度变化。

公开(公告)号：US20090321780A1

公开(公告)日：2009-12-31

申请号：US12491806

申请日：2009-06-25

Applicant: SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

Inventor： SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L33/14

Abstract: A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer.

Abstract translation: 描述了具有粗糙表面的氮化镓基发光器件。 发光器件包括衬底，在衬底上生长的缓冲层，在缓冲层上生长的n型III族氮化物半导体层，在n型III族氮化物半导体层上生长的III族氮化物半导体有源层， 在III族氮化物半导体有源层上生长的第一p型III族氮化物半导体层，在第一p型III族氮化物半导体上生长的重掺杂p型III半导体层和粗糙化的第二p型III- 在重掺杂的p型III半导体层上生长的氮化物半导体层。

公开(公告)号：US20090267097A1

公开(公告)日：2009-10-29

申请号：US12426010

申请日：2009-04-17

Applicant: PO MIN TU ,  SHIH CHENG HUANG ,  WEN YU LIN ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

Inventor： PO MIN TU ,  SHIH CHENG HUANG ,  WEN YU LIN ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

IPC: H01L33/00 ,  H01L21/20

CPC classification number: H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

Abstract translation: 制造III族氮化物半导体的光电器件的方法包括以下步骤：在原始衬底的表面上形成第一III族氮化物半导体层; 在所述第一III族氮化物半导体层上形成图案化的外延阻挡层; 在所述外延阻挡层上形成第二III族氮化物半导体层，在所述第二III族氮化物半导体层上未被所述外延阻挡层覆盖，然后除去所述外延阻挡层; 在所述第二III族氮化物半导体层上形成第三III族氮化物半导体层; 在第三III族氮化物半导体层上沉积或粘附导电层; 以及释放所述第三III族氮化物半导体层和与所述第二III族氮化物半导体层分离的所述导电层的组合。

公开(公告)号：US07134767B2

公开(公告)日：2006-11-14

申请号：US10898202

申请日：2004-07-26

Applicant: Cheng-Min Liao ,  Wen-Yu Lin

Inventor： Cheng-Min Liao ,  Wen-Yu Lin

IPC: F21S4/00

CPC classification number: G02F1/133611 ,  G02F1/133604

Abstract: A method for improving backlight uniformity is disclosed in which the two outermost lamps near each of the two sides of the back plate are positioned higher than the other lamps. Hence, the outermost lamps are closer to the scattering plate, thus improving the brightness at the two sides of the LCD panel such that various illumination and the shadows generated in specific regions on the LCD panel are avoided.

Abstract translation: 公开了一种用于改善背光均匀性的方法，其中背板两侧各附近的两个最外面的灯被定位成高于其他灯。 因此，最外侧的灯更靠近散射板，从而提高了LCD面板两侧的亮度，从而避免了在LCD面板上的特定区域中产生的各种照明和阴影。

公开(公告)号：US08217400B2

公开(公告)日：2012-07-10

申请号：US12577350

申请日：2009-10-12

Applicant: Shih Cheng Huang ,  Po Min Tu ,  Ying Chao Yeh ,  Wen Yu Lin ,  Peng Yi Wu ,  Shih Hsiung Chan

Inventor： Shih Cheng Huang ,  Po Min Tu ,  Ying Chao Yeh ,  Wen Yu Lin ,  Peng Yi Wu ,  Shih Hsiung Chan

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC classification number: H01L33/08 ,  H01L33/0079

Abstract: A wavelength conversion layer is formed on a surface of a light emitting device for transforming a portion of light emitted from the light emitting device into light of a different wavelength. The transformed light is mixed with the untransformed light, and thus the light emitting device can emit light having preferred CIE coordinates.

Abstract translation: 在发光器件的表面上形成波长转换层，用于将从发光器件发射的光的一部分变换为不同波长的光。 变换的光与未变换的光混合，因此发光器件可以发射具有优选CIE坐标的光。

公开(公告)号：US20120080715A1

公开(公告)日：2012-04-05

申请号：US13314186

申请日：2011-12-08

Applicant: SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

Inventor： SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

IPC: H01L33/32

CPC classification number: H01L21/0254 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02656 ,  H01L33/007 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

Abstract: A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.

Abstract translation: 半导体器件的结构包括第一半导体层; 在所述第一半导体层的表面上的中间层; 在所述中间层上的第二半导体层，其中所述中间层和所述第二半导体层被集成到一组子结构中; 以及在所述第二半导体层上的半导体发光器件。

公开(公告)号：US20090224283A1

公开(公告)日：2009-09-10

申请号：US12396750

申请日：2009-03-03

Applicant: SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

Inventor： SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

IPC: H01L33/00 ,  H01L21/02

CPC classification number: H01L33/007 ,  H01L33/0079

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.

Abstract translation: 一种制造III族氮化物半导体的光电器件的方法，其中所述方法包括以下步骤：在临时衬底的表面上形成第一III族氮化物半导体层; 使用光刻和蚀刻工艺图案化第一III族氮化物半导体层; 在所述图案化的第一III族氮化物半导体层上形成第二III族氮化物半导体层; 在所述第二III族氮化物半导体层上形成导电层; 并且通过去除第一III族氮化物半导体层来释放临时衬底，以获得第二III族氮化物半导体层和导电层的复合物。