Abstract:
An image sensor and manufacturing process thereof are provided. An image sensor according to an embodiment comprises a first wafer formed with a photodiode cell without a microlens and a second wafer formed with a circuit part including transistor and a capacitor. The first wafer is stacked on the second wafer such that a connecting electrode can be used to electrically connect the photodiode cell of the first wafer to the circuit part of the second wafer.
Abstract:
A secondary battery having a current interrupt device (CID) between a negative current collecting plate and a case of the secondary battery. The secondary battery includes: an electrode assembly including a positive electrode, a separator, and a negative electrode; a case housing the electrode assembly; a cap assembly coupled to the case for sealing the case; a positive current collecting plate connected to the positive electrode and the cap assembly; an insulator in the case adjacent an end plate of the case; and a negative current collecting plate connected to the negative electrode and the end plate of the case, the end plate being curved convexly toward an inner cavity of the case.
Abstract:
A semiconductor device and a fabricating method thereof are provided. A PMD layer and at least one IMD layer are formed on a semiconductor substrate. A through-electrode penetrates through the PMD layer and the IMD layer, and a connecting electrode connects to the through-electrode.
Abstract:
Provided is a portable apparatus for recognizing and storing taste/odor, and a method thereof. The apparatus, includes: a sensor for recognizing taste/odor information by using at least one sensor and modulating the taste/odor information into an electrical signal; a control unit for transforming the recognized taste/odor information into a standardized format to record the taste/odor information in a storage; a storage for storing the standardized taste/odor information by control of the control unit; an input/output interface for transmitting the stored taste/odor information to outside; and a power source for supplying power to each constituent element.
Abstract:
A low-resistance wiring structure and a liquid crystal display are disclosed. The liquid crystal display includes a first substrate; a thin film transistor (TFT) formed on the first substrate and formed of a gate wiring, a data wiring and a semiconductor layer; and a second substrate attached to the first substrate in a facing manner, wherein at least one of the gate wiring and the data wiring is formed as a first wiring made of copper, a second wiring made of a barrier metal preventing spreading of copper, and a metal oxide film pattern formed between the first and second wirings. A MO/Cu wiring structure is implemented by using pure molybdenum, so that the low-resistance wiring structure with high reliability can be formed at a low cost.
Abstract:
A wearable system and a method for transferring and controlling information/service based on biologically generated information from a user are provided. In the method, an intuitive bio signal generated by a user is sensed and a device pointed by the sensed bio signal is selected. Then, bio signal information is created using the sensed bio signal and the generated bio signal information is transmitted to the selected device. After transmitting, the information/service is transferred to the selected device after confirming that the selected device that receives the bio signal information is activated.
Abstract:
A method of forming an aluminum line of a semiconductor device where first A metal thin layer, a first aluminum layer, and a first B metal thin layer are sequentially applied on an interlayer insulating layer. A photolithography process is performed to form a metal line pattern, and etching is performed thereon. An intermetallic dielectric layer is applied on the metal line pattern. The first B metal thin layer is removed by a chemical mechanical planarization process to form a first stage metal line. A second aluminum layer and a second metal thin layer are sequentially applied. Photoresist is applied, a photolithography process is performed to form a metal line pattern, and etching is performed to form a second stage metal line. An intermetallic dielectric layer is applied on the second stage metal line. A chemical mechanical planarization process is performed on the second intermetallic dielectric layer.
Abstract:
The present invention relates to a copper wire in a semiconductor device in which a barrier layer is formed for improving adhesion of a copper wire without any additional fabricating step; a method for fabricating the same, and a flat panel display device with the same. The copper wire includes a barrier layer formed on an underlying structure, and a copper conductive layer on the barrier layer, wherein the barrier layer includes at least one of a Cu2O layer and a CuOxNy layer.
Abstract translation:本发明涉及一种半导体器件中的铜线,其中形成阻挡层以改善铜线的附着,而无需任何额外的制造步骤; 其制造方法和具有该方法的平板显示装置。 铜线包括形成在下面的结构上的阻挡层和阻挡层上的铜导电层,其中阻挡层包括Cu 2 O层和CuO x N y层中的至少一种。
Abstract:
The invention relates to an apparatus for providing sensing information which includes a surface-sensing information combiner for collecting tactile sensing information on a surface of an object and accompanying sensing information attendant on the tactile sensing information of the surface of the object to produce surface-sensing information or edit the produced surface-sensing information. The apparatus also includes a surface-sensing information board for providing an environment for the surface-sensing information of the object to allow a user to perceive the surface-sensing information of the object. The apparatus further includes a surface-sensing information reproducer for reproducing the tactile sensing information and the accompanying sensing information of the object to be sensed by the user.
Abstract:
A plasma display panel including common and scanning electrodes arranged on a first substrate. A first dielectric layer covers the common electrodes and the scanning electrodes, and it includes groove shaped field concentration units. The width of end parts of a field concentration unit is greater than the width of the central part of the field concentration unit.