公开(公告)号：US08732984B2

公开(公告)日：2014-05-27

申请号：US13869127

申请日：2013-04-24

Applicant: Yong-ho Ha

Inventor： Yong-ho Ha

IPC: A43B13/18

CPC classification number: A43B13/18 ,  A43B13/181

Abstract: A shock absorbing shoe with a triangle shock absorbing space, the shoe having an outsole and a midsole, wherein the midsole is divided into upper and lower midsoles, a plurality of upper seating holes provided on opposite sides of the upper midsole behind an area corresponding to an arch region of a foot sole, a plurality of lower seating holes provided on opposite sides of the lower midsole. The shoe includes a shock absorbing means having a body member formed longitudinally between the upper and lower midsoles, and wing members provided on opposite sides of the body member. Each wing member includes an upper inclined portion inclined upwards to be received in the associated upper seating hole, a lower inclined portion inclined downwards to be received in the associated lower seating hole, and a connecting portion connecting the upper and lower inclined portions.

Abstract translation: 一种具有三角形减震空间的减震鞋，鞋具有外底和中底，其中中底分为上下中底，多个上座位孔设置在上中底的相对侧的对应于 脚底的拱形区域，设置在下部中底的相对侧上的多个下部安置孔。 该鞋包括一个冲击吸收装置，该冲击吸收装置具有纵向形成于上下中底之间的主体构件，以及设置在本体构件的相对侧上的翼构件。 每个翼构件包括向上倾斜以被接收在相关联的上座孔中的上倾斜部分，向下倾斜以被接收在相关联的下安置孔中的下倾斜部分和连接上下倾斜部分的连接部分。

公开(公告)号：US20130234100A1

公开(公告)日：2013-09-12

申请号：US13860836

申请日：2013-04-11

Applicant: Hyeong-Geun An ,  Dong-Ho Ahn ,  Young-Soo Lim ,  Yong-Ho Ha ,  Jun-Young Jang ,  Dong-Won Lim ,  Gyeo-Re Lee ,  Joon-Sang Park ,  Han-Bong Ko ,  Young-Lim Park

Inventor： Hyeong-Geun An ,  Dong-Ho Ahn ,  Young-Soo Lim ,  Yong-Ho Ha ,  Jun-Young Jang ,  Dong-Won Lim ,  Gyeo-Re Lee ,  Joon-Sang Park ,  Han-Bong Ko ,  Young-Lim Park

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/141 ,  H01L45/16 ,  Y10S438/90

Abstract: Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.

Abstract translation: 相变存储器件可以在衬底上具有底部图案。 线形或L形底部电极可以形成为与衬底上的相应底部图案接触并且具有由衬底上沿x和y轴方向的尺寸限定的顶表面。 沿着底部电极的顶表面的x轴的尺寸比用于制造相变存储器件的光刻工艺的分辨率极限具有更小的宽度。 相变图案可以形成为与底部电极的顶表面接触以具有比底部电极的顶表面的x和y轴方向上的每个尺寸更大的宽度，并且顶部电极可以形成在相位上 其中线形或L形表示底部电极在x轴方向上的截面线形状或截面L形。

公开(公告)号：US08456891B2

公开(公告)日：2013-06-04

申请号：US13150596

申请日：2011-06-01

Applicant: In-gyu Baek ,  Myung-jong Kim ,  Yong-ho Ha

Inventor： In-gyu Baek ,  Myung-jong Kim ,  Yong-ho Ha

IPC: G11C11/00 ,  H01L45/00

CPC classification number: H01L45/08 ,  H01L27/2409 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146

Abstract: A nonvolatile memory cell includes first and second electrodes and a data storage layer extending between the first and second electrodes. An oxygen diffusion barrier layer is provided, which extends between the data storage layer and the first electrode. An oxygen gettering layer is also provided, which extends between the oxygen diffusion barrier layer and the data storage layer. The oxygen diffusion barrier layer includes aluminum oxide, the oxygen gettering layer includes titanium, the data storage layer includes a metal oxide, such as magnesium oxide, and at least one of the first and second electrodes includes a material selected from a group consisting of tungsten, polysilicon, aluminum, titanium nitride silicide and conductive nitrides.

Abstract translation: 非易失性存储单元包括第一和第二电极以及在第一和第二电极之间延伸的数据存储层。 提供氧扩散阻挡层，其在数据存储层和第一电极之间延伸。 还提供了氧吸气层，其在氧扩散阻挡层和数据存储层之间延伸。 氧扩散阻挡层包括氧化铝，氧吸气层包括钛，数据存储层包括诸如氧化镁的金属氧化物，并且第一和第二电极中的至少一个包括选自钨 ，多晶硅，铝，氮化钛硅化物和导电氮化物。

公开(公告)号：US08426840B2

公开(公告)日：2013-04-23

申请号：US12913099

申请日：2010-10-27

Applicant: Hyeong-Geun An ,  Dong-Ho Ahn ,  Young-Soo Lim ,  Yong-Ho Ha ,  Jun-Young Jang ,  Dong-Won Lim ,  Gyeo-Re Lee ,  Joon-Sang Park ,  Han-Bong Ko ,  Young-Lim Park

Inventor： Hyeong-Geun An ,  Dong-Ho Ahn ,  Young-Soo Lim ,  Yong-Ho Ha ,  Jun-Young Jang ,  Dong-Won Lim ,  Gyeo-Re Lee ,  Joon-Sang Park ,  Han-Bong Ko ,  Young-Lim Park

IPC: H01L47/00

CPC classification number: H01L45/1253 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/141 ,  H01L45/16 ,  Y10S438/90

Abstract: A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180° of a circular arc.

Abstract translation: 非易失性存储单元包括衬底和配置为将存储单元的状态保持在衬底上的相变图案。 提供电绝缘层，其包含与相变图案接触的第一电极。 第一电极在从横截面观察时具有L形中的至少一个，并且从平面图看为弧形。 从平面图看，第一电极的下部可以是环状的。 第一电极的下部也可以具有U形横截面。 第一电极的上部也可以具有跨越180°以上圆弧的弓形形状。

公开(公告)号：US08133757B2

公开(公告)日：2012-03-13

申请号：US12592816

申请日：2009-12-03

Applicant: Hyun-Suk Kwon ,  Young-Soo Lim ,  Sung-Un Kwon ,  Yong-Ho Ha ,  Jeong-Hee Park ,  Joon-Sang Park ,  Myung-Jin Kang ,  Doo-Hwan Park

Inventor： Hyun-Suk Kwon ,  Young-Soo Lim ,  Sung-Un Kwon ,  Yong-Ho Ha ,  Jeong-Hee Park ,  Joon-Sang Park ,  Myung-Jin Kang ,  Doo-Hwan Park

IPC: H01L29/02

CPC classification number: H01L27/2436 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1683

Abstract: A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer.

Abstract translation: 相变存储单元包括下电极，具有开口的绝缘层间结构，相变材料层和上电极。 下电极形成在基板上。 绝缘层间结构具有开口并且形成在下电极和基板上。 开口露出下电极并且具有向下逐渐减小的宽度。 相变材料层填充开口并部分地覆盖绝缘层间结构的上表面。 上电极形成在相变材料层上。

公开(公告)号：US20120032135A1

公开(公告)日：2012-02-09

申请号：US13276084

申请日：2011-10-18

Applicant: Bong-Jin KUH ,  Yong-Ho HA ,  Doo-Hwan PARK ,  Han-Bong KO ,  Sang-Wook LIM ,  Hee-Ju SHIN

Inventor： Bong-Jin KUH ,  Yong-Ho HA ,  Doo-Hwan PARK ,  Han-Bong KO ,  Sang-Wook LIM ,  Hee-Ju SHIN

IPC: H01L47/00

CPC classification number: G11C13/0004 ,  G11C2213/35 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1658 ,  H01L45/1675 ,  H01L45/1683

Abstract: A phase-change material layer is formed on the lower electrode using a chalcogenide compound doped with carbon, or carbon and nitrogen. A phase-change material layer is obtained by doping a stabilizing metal into the preliminary phase-change material layer. An upper electrode is formed on the phase-change material layer. Since the phase-change material layer may have improved electrical characteristics, stability of phase transition and thermal stability, the phase-change memory unit may have reduced set resistance, enhanced durability, improved reliability, increased sensing margin, reduced driving current, etc.

Abstract translation: 使用掺杂有碳或碳和氮的硫属化物化合物在下电极上形成相变材料层。 通过将稳定金属掺杂到初始相变材料层中来获得相变材料层。 在相变材料层上形成上电极。 由于相变材料层可能具有改善的电特性，相变稳定性和热稳定性，所以相变存储单元可以具有降低的设定电阻，增强的耐久性，改善的可靠性，增加的感测裕度，降低的驱动电流等。

公开(公告)号：US07989259B2

公开(公告)日：2011-08-02

申请号：US12777599

申请日：2010-05-11

Applicant: Bong-Jin Kuh ,  Yong-Ho Ha ,  Ji-Hye Yi

Inventor： Bong-Jin Kuh ,  Yong-Ho Ha ,  Ji-Hye Yi

IPC: H01L29/02

CPC classification number: G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608 ,  Y10S438/90

Abstract: A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an opening therein, and a lower electrode is formed in the opening. The lower electrode has a nitrided surface portion and is in electrical contact with the contact region of the substrate. A phase-changeable material layer pattern is on the lower electrode, and an upper electrode is on the phase-changeable material layer pattern. The insulating interlayer may have a nitrided surface portion and the phase-changeable material layer may be at least partially on the nitrided surface portion of the insulating interlayer. Methods of forming phase-changeable memory devices are also disclosed.

Abstract translation: 相变型存储器件包括在其上表面具有接触区域的衬底。 衬底上的绝缘中间层具有开口，并且在开口中形成下电极。 下电极具有氮化表面部分并且与衬底的接触区域电接触。 相变材料层图案位于下电极上，上电极位于相变材料层图案上。 绝缘中间层可以具有氮化表面部分，并且相变材料层可以至少部分地在绝缘中间层的氮化表面部分上。 还公开了形成相变存储器件的方法。

公开(公告)号：US20110044098A1

公开(公告)日：2011-02-24

申请号：US12913099

申请日：2010-10-27

Applicant: Hyeong-Geun An ,  Dong-Ho Ahn ,  Young-Soo Lim ,  Yong-Ho Ha ,  Jun-Young Jang ,  Dong-Won Lim ,  Gyeo-Re Lee ,  Joon-Sang Park ,  Han-Bong Ko ,  Young-Lim Park

Inventor： Hyeong-Geun An ,  Dong-Ho Ahn ,  Young-Soo Lim ,  Yong-Ho Ha ,  Jun-Young Jang ,  Dong-Won Lim ,  Gyeo-Re Lee ,  Joon-Sang Park ,  Han-Bong Ko ,  Young-Lim Park

IPC: G11C11/46

CPC classification number: H01L45/1253 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/141 ,  H01L45/16 ,  Y10S438/90

Abstract: A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180° of a circular arc.

Abstract translation: 非易失性存储单元包括衬底和配置为将存储单元的状态保持在衬底上的相变图案。 提供电绝缘层，其包含与相变图案接触的第一电极。 第一电极在从横截面观察时具有L形中的至少一个，并且从平面图看为弧形。 从平面图看，第一电极的下部可以是环状的。 第一电极的下部也可以具有U形横截面。 第一电极的上部也可以具有跨越180°以上圆弧的弓形形状。

公开(公告)号：US07824954B2

公开(公告)日：2010-11-02

申请号：US12170038

申请日：2008-07-09

Applicant: Hyeong-Geun An ,  Dong-Ho Ahn ,  Young-Soo Lim ,  Yong-Ho Ha ,  Jun-Young Jang ,  Dong-Won Lim ,  Gyeo-Re Lee ,  Joon-Sang Park ,  Han-Bong Ko ,  Young-Lim Park

Inventor： Hyeong-Geun An ,  Dong-Ho Ahn ,  Young-Soo Lim ,  Yong-Ho Ha ,  Jun-Young Jang ,  Dong-Won Lim ,  Gyeo-Re Lee ,  Joon-Sang Park ,  Han-Bong Ko ,  Young-Lim Park

IPC: H01L21/06

CPC classification number: H01L45/1253 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/141 ,  H01L45/16 ,  Y10S438/90

Abstract: Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.

Abstract translation: 相变存储器件可以在衬底上具有底部图案。 线形或L形底部电极可以形成为与衬底上的相应底部图案接触并且具有由衬底上沿x和y轴方向的尺寸限定的顶表面。 沿着底部电极的顶表面的x轴的尺寸比用于制造相变存储器件的光刻工艺的分辨率极限具有更小的宽度。 相变图案可以形成为与底部电极的顶表面接触以具有比底部电极的顶表面的x和y轴方向上的每个尺寸更大的宽度，并且顶部电极可以形成在相位上 其中线形或L形表示底部电极在x轴方向上的截面线形状或截面L形。

公开(公告)号：US07741631B2

公开(公告)日：2010-06-22

申请号：US12147996

申请日：2008-06-27

Applicant: Bong-Jin Kuh ,  Yong-Ho Ha ,  Ji-Hye Yi

Inventor： Bong-Jin Kuh ,  Yong-Ho Ha ,  Ji-Hye Yi

IPC: H01L29/02

CPC classification number: G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608 ,  Y10S438/90

Abstract: A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an opening therein, and a lower electrode is formed in the opening. The lower electrode has a nitrided surface portion and is in electrical contact with the contact region of the substrate. A phase-changeable material layer pattern is on the lower electrode, and an upper electrode is on the phase-changeable material layer pattern. The insulating interlayer may have a nitrided surface portion and the phase-changeable material layer may be at least partially on the nitrided surface portion of the insulating interlayer. Methods of forming phase-changeable memory devices are also disclosed.

Abstract translation: 相变型存储器件包括在其上表面具有接触区域的衬底。 衬底上的绝缘中间层具有开口，并且在开口中形成下电极。 下电极具有氮化表面部分并且与衬底的接触区域电接触。 相变材料层图案位于下电极上，上电极位于相变材料层图案上。 绝缘中间层可以具有氮化表面部分，并且相变材料层可以至少部分地在绝缘中间层的氮化表面部分上。 还公开了形成相变存储器件的方法。