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    Nonvolatile memory cells having oxygen diffusion barrier layers therein
    1.
    发明授权
    Nonvolatile memory cells having oxygen diffusion barrier layers therein 有权
    其中具有氧扩散阻挡层的非易失性存储单元

    公开(公告)号：US08456891B2

    公开(公告)日：2013-06-04

    申请号：US13150596

    申请日：2011-06-01

    申请人： In-gyu Baek ,  Myung-jong Kim ,  Yong-ho Ha

    发明人： In-gyu Baek ,  Myung-jong Kim ,  Yong-ho Ha

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： H01L45/08 ,  H01L27/2409 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146

    摘要： A nonvolatile memory cell includes first and second electrodes and a data storage layer extending between the first and second electrodes. An oxygen diffusion barrier layer is provided, which extends between the data storage layer and the first electrode. An oxygen gettering layer is also provided, which extends between the oxygen diffusion barrier layer and the data storage layer. The oxygen diffusion barrier layer includes aluminum oxide, the oxygen gettering layer includes titanium, the data storage layer includes a metal oxide, such as magnesium oxide, and at least one of the first and second electrodes includes a material selected from a group consisting of tungsten, polysilicon, aluminum, titanium nitride silicide and conductive nitrides.

    摘要翻译： 非易失性存储单元包括第一和第二电极以及在第一和第二电极之间延伸的数据存储层。 提供氧扩散阻挡层，其在数据存储层和第一电极之间延伸。 还提供了氧吸气层，其在氧扩散阻挡层和数据存储层之间延伸。 氧扩散阻挡层包括氧化铝，氧吸气层包括钛，数据存储层包括诸如氧化镁的金属氧化物，并且第一和第二电极中的至少一个包括选自钨 ，多晶硅，铝，氮化钛硅化物和导电氮化物。

    Nonvolatile Memory Devices Having Cells with Oxygen Diffusion Barrier Layers Therein and Methods of Manufacturing the Same
    2.
    发明申请
    Nonvolatile Memory Devices Having Cells with Oxygen Diffusion Barrier Layers Therein and Methods of Manufacturing the Same 有权
    具有氧扩散阻挡层的电池的非易失性存储器件及其制造方法

    公开(公告)号：US20110291066A1

    公开(公告)日：2011-12-01

    申请号：US13150596

    申请日：2011-06-01

    申请人： In-gyu Baek ,  Myung-jong Kim ,  Yong-ho Ha

    发明人： In-gyu Baek ,  Myung-jong Kim ,  Yong-ho Ha

    IPC分类号： H01L47/00

    CPC分类号： H01L45/08 ,  H01L27/2409 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146

    摘要： A nonvolatile memory cell includes first and second electrodes and a data storage layer extending between the first and second electrodes. An oxygen diffusion barrier layer is provided, which extends between the data storage layer and the first electrode. An oxygen gettering layer is also provided, which extends between the oxygen diffusion barrier layer and the data storage layer. The oxygen diffusion barrier layer includes aluminum oxide, the oxygen gettering layer includes titanium, the data storage layer includes a metal oxide, such as magnesium oxide, and at least one of the first and second electrodes includes a material selected from a group consisting of tungsten, polysilicon, aluminum, titanium nitride silicide and conductive nitrides.

    摘要翻译： 非易失性存储单元包括第一和第二电极以及在第一和第二电极之间延伸的数据存储层。 提供氧扩散阻挡层，其在数据存储层和第一电极之间延伸。 还提供了氧吸气层，其在氧扩散阻挡层和数据存储层之间延伸。 氧扩散阻挡层包括氧化铝，氧吸气层包括钛，数据存储层包括诸如氧化镁的金属氧化物，并且第一和第二电极中的至少一个包括选自钨 ，多晶硅，铝，氮化钛硅化物和导电氮化物。

    Semiconductor memory devices
    3.
    发明授权
    Semiconductor memory devices 有权
    半导体存储器件

    公开(公告)号：US08619490B2

    公开(公告)日：2013-12-31

    申请号：US13153749

    申请日：2011-06-06

    申请人： Hak-soo Yu ,  Hong-sun Hwang ,  Kwan-young Oh ,  In-gyu Baek ,  Jin-hyoung Kwon

    发明人： Hak-soo Yu ,  Hong-sun Hwang ,  Kwan-young Oh ,  In-gyu Baek ,  Jin-hyoung Kwon

    IPC分类号： G11C8/00

    CPC分类号： G11C5/063

    摘要： Semiconductor memory devices include a first storage layer and a second storage layer, each of which includes at least one array, and a control layer for controlling access to the first storage layer and the second storage layer so as to write data to or read data from the array included in the first storage layer or the second storage layer in correspondence to a control signal. A memory capacity of the array included in the first storage layer is different from a memory capacity of the array included in the second storage layer.

    摘要翻译： 半导体存储器件包括第一存储层和第二存储层，每个存储层包括至少一个阵列，以及用于控制对第一存储层和第二存储层的访问的控制层，以便将数据写入或从 该阵列包括在与控制信号对应的第一存储层或第二存储层中。 包括在第一存储层中的阵列的存储器容量不同于包括在第二存储层中的阵列的存储器容量。

    Methods of fabricating non-volatile memory devices with discrete resistive memory material regions
    6.
    发明申请
    Methods of fabricating non-volatile memory devices with discrete resistive memory material regions 审中-公开
    使用分立电阻记忆材料区域制造非易失性存储器件的方法

    公开(公告)号：US20110081762A1

    公开(公告)日：2011-04-07

    申请号：US12880721

    申请日：2010-09-13

    申请人： Suk-hun Choi ,  In-gyu Baek ,  Jun-young Lee ,  Jung-hyeon Kim ,  Chang-ki Hong ,  Yoon-ho Son

    发明人： Suk-hun Choi ,  In-gyu Baek ,  Jun-young Lee ,  Jung-hyeon Kim ,  Chang-ki Hong ,  Yoon-ho Son

    IPC分类号： H01L21/02

    CPC分类号： H01L45/04 ,  H01L27/2409 ,  H01L27/2481 ,  H01L28/20 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1683

    摘要： A semiconductor memory device includes a first conductive line on a semiconductor substrate, an interlayer insulating layer on the first conductive line, a second conductive line on the interlayer insulating layer, and a memory cell in an hole through the interlayer insulating layer wherein the first and second conductive lines cross, the memory cell including a discrete resistive memory material region disposed in the hole and electrically connected between the first and second conductive lines. The resistive memory material region may be substantially contained within the hole. In some embodiments, contact between the resistive memory material region and the interlayer insulating layer is substantially limited to sidewalls of the interlayer insulating layer in the hole.

    摘要翻译： 半导体存储器件包括半导体衬底上的第一导电线，第一导线上的层间绝缘层，层间绝缘层上的第二导线，以及穿过层间绝缘层的孔中的存储单元，其中， 第二导线交叉，存储单元包括设置在孔中并电连接在第一和第二导线之间的分立的电阻性存储器材料区域。 电阻性存储器材料区域可以基本上包含在孔内。 在一些实施例中，电阻性存储器材料区域和层间绝缘层之间的接触基本上限于孔中的层间绝缘层的侧壁。

    Semiconductor Memory Devices
    7.
    发明申请
    Semiconductor Memory Devices 有权
    半导体存储器件

    公开(公告)号：US20110305059A1

    公开(公告)日：2011-12-15

    申请号：US13153749

    申请日：2011-06-06

    申请人： Hak-soo Yu ,  Hong-sun Hwang ,  Kwan-young Oh ,  In-gyu Baek ,  Jin-hyoung Kwon

    发明人： Hak-soo Yu ,  Hong-sun Hwang ,  Kwan-young Oh ,  In-gyu Baek ,  Jin-hyoung Kwon

    IPC分类号： G11C5/06 ,  G11C7/00

    CPC分类号： G11C5/063

    摘要： Semiconductor memory devices include a first storage layer and a second storage layer, each of which includes at least one array, and a control layer for controlling access to the first storage layer and the second storage layer so as to write data to or read data from the array included in the first storage layer or the second storage layer in correspondence to a control signal. A memory capacity of the array included in the first storage layer is different from a memory capacity of the array included in the second storage layer.

    摘要翻译： 半导体存储器件包括第一存储层和第二存储层，每个存储层包括至少一个阵列，以及用于控制对第一存储层和第二存储层的访问的控制层，以便将数据写入或从 该阵列包括在与控制信号对应的第一存储层或第二存储层中。 包括在第一存储层中的阵列的存储器容量不同于包括在第二存储层中的阵列的存储器容量。

    Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same
    10.
    发明授权
    Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same 有权
    具有堆叠结构的半导体存储器件，包括基于电阻开关的逻辑电路及其制造方法

    公开(公告)号：US08553445B2

    公开(公告)日：2013-10-08

    申请号：US13224410

    申请日：2011-09-02

    申请人： In-gyu Baek ,  Hong-sun Hwang ,  Hak-soo Yu ,  Chul-woo Park

    发明人： In-gyu Baek ,  Hong-sun Hwang ,  Hak-soo Yu ,  Chul-woo Park

    IPC分类号： G11C11/00

    CPC分类号： H01L45/147 ,  G11C5/025 ,  G11C13/0002 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/14

    摘要： Semiconductor memory device having a stacking structure including resistor switch based logic circuits. The semiconductor memory device includes a first conductive line that includes a first line portion and a second line portion, wherein the first line portion and the second line portion are electrically separated from each other by an intermediate region disposed between the first and second line portions, a first variable resistance material film that is connected to the first line portion and stores data, and a second variable resistance material film that controls an electrical connection between the first line portion and the second line portion.

    摘要翻译： 具有包括基于电阻器开关的逻辑电路的堆叠结构的半导体存储器件。 半导体存储器件包括第一导线，其包括第一线部分和第二线部分，其中第一线部分和第二线部分通过布置在第一线部分和第二线部分之间的中间区域彼此电分离， 连接到第一线部分并存储数据的第一可变电阻材料膜和控制第一线部分和第二线部分之间的电连接的第二可变电阻材料膜。